DMGSVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V (BR)DSS R DS(on) Q 3V Q -3V I D mω @ V GS = V 3.A mω @ V GS =.5V.7A 95mΩ @ V GS = -V mω @ V GS = -.5V Description and Applications -.A -.3A This new generation MOSFET has been designed to minimize the onstate resistance (R DS(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting DC-DC Converters Power management functions Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free Finish; RoHS compliant (Note ) Halogen and Antimony Free. Green Device (Note ) Qualified to AEC-Q Standards for High Reliability Mechanical Data Case: TSOT Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 9V- Moisture Sensitivity: Level per J-STD- Terminals Connections: See Diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-, Method Weight:.3 grams (approximate) TSOT Q D Q D G D G G S 5 S G 3 D S S Top View Top View N-Channel P-Channel Ordering Information (Note 3) Part Number Case Packaging DMGSVT-7 TSOT 3 / Tape & Reel Notes:. EU Directive /95/EC (RoHS) & /5/EU (RoHS ) compliant. All applicable RoHS exemptions applied.. Halogen and Antimony free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 3. For packaging details, go to our website at http://. Marking Information C YM C = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = ) M = Month (ex: 9 = September) Date Code Key Year 3 5 7 Code X Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 3 5 7 9 O N D DMGSVT Document number: DS35 Rev. - of May
DMGSVT Maximum Ratings Q @TA = 5 C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage V DSS 3 V Gate-Source Voltage V GSS ± V Continuous Drain Current (Note 5) V GS = V Steady 3. I State D T A = 7 C.7 A Continuous Drain Current (Note 5) V GS =.5V Steady.7 I State D T A = 7 C. A Maximum Continuous Body Diode Forward Current (Note 5) IS.5 A Pulsed Drain Current (Note 5) I DM 5 A Maximum Ratings Q @TA = 5 C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage V DSS -3 V Gate-Source Voltage V GSS ± V Continuous Drain Current (Note 5) V GS = -V Steady -. I State D T A = 7 C -. A Continuous Drain Current (Note 5) V GS = -.5V Steady -.3 I State D T A = 7 C -. A Maximum Continuous Body Diode Forward Current (Note 5) IS -.5 A Pulsed Drain Current (Note 5) I D - A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note ). P D T A = 7 C.5 W Thermal Resistance, Junction to Ambient (Note ) Steady state 55 R t<s θja 9 C/W Total Power Dissipation (Note 5).7 P D T A = 7 C. W Thermal Resistance, Junction to Ambient (Note 5) Steady state R t<s θja 7 C/W Thermal Resistance, Junction to Case (Note 5) R θjc 3 Operating and Storage Temperature Range T J, T STG -55 to +5 C Notes:. Device mounted on FR- substrate PC board, oz copper, with minimum recommended pad layout. 5. Device mounted on FR- substrate PC board, oz copper, with inch square copper plate. DMGSVT Document number: DS35 Rev. - of May
DMGSVT Electrical Characteristics Q NMOS@ unless otherwise stated Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note ) Drain-Source Breakdown Voltage BV DSS 3 - - V V GS = V, I D = 5μA Zero Gate Voltage Drain Current I DSS - -. µa V DS = V, V GS = V Gate-Source Leakage I GSS - - ± na V GS = ±V, V DS = V ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(th). -.3 V V DS = V GS, I D = 5μA Static Drain-Source On-Resistance R DS (ON) - 3 55 mω V GS = V, I D = 3.A V GS =.5V, I D = A Forward Transfer Admittance Y fs - - S V DS = 5V, I D = 3.A Diode Forward Voltage V SD -. V V GS = V, I S = A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C iss - 9 V pf DS = 5V, V GS = V, Output Capacitance C oss - f =.MHz Reverse Transfer Capacitance C rss - Gate Resistance R g -. - Ω V DS = V, V GS = V, f = MHz Total Gate Charge (V GS =.5V) Q g - V DS = 5V, V GS =.5V, I D = 3.A Total Gate Charge (V GS = V) Q g - 9 3 nc Gate-Source Charge Q gs -. - V DS = 5V, V GS = V, I D = 3A Gate-Drain Charge Q gd -.5 - Turn-On Delay Time t D(on) - 3 - Turn-On Rise Time t r - 5 - Turn-Off Delay Time t D(off) - 3 - Turn-Off Fall Time t f - 3 - Notes:. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. ns V GS = V, V DS = 5V, R G = 3Ω, R L =.7Ω. V = 5.V DS I D, DRAIN CURRENT (A).... I D, DRAIN CURRENT (A)..5.5.5 3 3.5.5 5 V DS, DRAIN -SOURCE VOLTAGE(V) Fig. Typical Output Characteristics 3 5 V GS, GATE SOURCE VOLTAGE(V) Fig. Typical Transfer Characteristics DMGSVT Document number: DS35 Rev. - 3 of May
DMGSVT R DS(ON),DRAIN-SOURCE ON-RESISTANCE( Ω ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized). R DS(ON) ( Ω) Ave @ V G=.5V R DS(ON) ( Ω) Ave @ V G=V. I D, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage..... -5-5 5 5 75 5 5 Fig. 5 On-Resistance Variation with Temperature R DS(ON), DRAIN-SOURCE ON-RESISTANCE( Ω ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE......... V =.5V GS Ave R DS(ON) ( Ω ) @ 5 C Ave R DS(ON) ( Ω ) @ 5 C Ave R DS(ON) ( Ω ) @ 5 C Ave R DS(ON) ( Ω ) @ 5 C Ave R DS(ON) ( Ω ) @ -55 C I D, DRAIN SOURCE CURRENT (A) Fig. Typical On-Resistance vs. Drain Current and Temperature -5-5 5 5 75 5 5 Fig. On-Resistance Variation with Temperature. V GS(th), GATE THRESHOLD VOLTAGE (V)..... I D= 5μA I = ma D I, SOURCE CURRENT (A) S V SD(V) @ V DS=V T A = 5 C -5-5 5 5 75 5 5 Fig. 7 Gate Threshold Variation vs. Ambient Temperature...... V SD, SOURCE-DRAIN VOLTAGE (V) Fig. Diode Forward Voltage vs. Current DMGSVT Document number: DS35 Rev. - of May
DMGSVT f = MHz C T, JUNCTION CAPACITANCE (pf) I D, DRAIN CURRENT (A) COSS Ave (pf) CISS Ave (pf) CRSS Ave (pf) 5 5 5 3 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance RDS(on) Limited P = µs W DC P W = s P W = s P W = ms P W = ms. T = 5 C P J(max) W = ms V GS = V Single Pulse DUT on * MRP Board.. V DS, DRAIN-SOURCE VOLTAGE (V) Fig. SOA, Safe Operation Area V GS GATE THRESHOLD VOLTAGE (V) V DS = V I D = 3.A Q g, TOTAL GATE CHARGE (nc) Fig. Gate Charge DMGSVT Document number: DS35 Rev. - 5 of May
DMGSVT Electrical Characteristics Q PMOS@ unless otherwise stated Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note ) Drain-Source Breakdown Voltage BV DSS -3 - - V V GS = V, I D = -5μA Zero Gate Voltage Drain Current I DSS - - -. µa V DS = -V, V GS = V Gate-Source Leakage I GSS - - ± na V GS = ±V, V DS = V ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(th) -. - -.3 V V DS = V GS, I D = -5μA Static Drain-Source On-Resistance R DS (ON) - 73 99 95 mω V GS = -V, I D = -.7A V GS = -.5V, I D = -A Forward Transfer Admittance Y fs - - S V DS = -5V, I D = -.7A Diode Forward Voltage V SD - -. -. V V GS = V, I S = -A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C iss - 35 V pf DS = -5V, V GS = V, Output Capacitance C oss - 5 f =.MHz Reverse Transfer Capacitance C rss - 5 Gate Resistance R g - 7. - Ω V DS = V, V GS = V, f = MHz Total Gate Charge (V GS = -.5V) Q g - V DS = -5V, V GS = -.5V, I D = -3A Total Gate Charge (V GS = -V) Q g - 7 9 nc Gate-Source Charge Q gs -.9 - V DS = -5V, V GS = -V, I D = -3A Gate-Drain Charge Q gd -. - Turn-On Delay Time t D(on) -. - Turn-On Rise Time t r - 7.3 - Turn-Off Delay Time t D(off) - - Turn-Off Fall Time t f - 3 - Notes:. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. ns V GS = -V, V DS = -5V, R G = Ω, R L = 5Ω. I D, DRAIN CURRENT... I D, DRAIN CURRENT (A)..5.5.5 3 3.5.5 5 V DS, DRAIN -SOURCE VOLTAGE(V) Fig. Typical Output Characteristics.5.5.5 3 3.5.5 5 V GS, GATE SOURCE VOLTAGE(V) Fig. 3 Typical Transfer Characteristics DMGSVT Document number: DS35 Rev. - of May
DMGSVT R DS(ON),DRAIN-SOURCE ON-RESISTANCE( Ω ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized)..35.3.5..5. R DS(ON) ( Ω) Ave @ V G=.5V R DS(ON) ( Ω) Ave @ V G=.5V.5 R DS(ON) ( Ω) Ave @ V G=V I D, DRAIN SOURCE CURRENT Fig. Typical On-Resistance vs. Drain Current and Gate Voltage I D, DRAIN SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Temperature..... -5-5 5 5 75 5 5 Fig. On-Resistance Variation with Temperature R DS(ON), DRAIN-SOURCE ON-RESISTANCE( Ω ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω ).......... V =.5V GS Ave R DS(ON) ( Ω ) @ 5 C Ave R DS(ON) ( Ω ) @ 5 C Ave R DS(ON) ( Ω ) @ 5 C Ave R DS(ON) ( Ω ) @ 5 C Ave R DS(ON) ( Ω ) @ -55 C -5-5 5 5 75 5 5 Fig. 7 On-Resistance Variation with Temperature V GS(TH), GATE THRESHOLD VOLTAGE (V).... I, SOURCE CURRENT (V) S -5-5 5 5 75 5 5 Fig. Gate Threshold Variation vs. Ambient Temperature...... V SD, SOURCE -DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current DMGSVT Document number: DS35 Rev. - 7 of May
DMGSVT C T, JUNCTION CAPACITANCE (pf) -I D, DRAIN CURRENT (A) C Ave(pF) ISS C Ave(pF) RSS f = MHz C Ave(pF) OSS 5 5 5 3 -V DS, DRAIN-SOURCE VOLTAGE (V) Fig. Typical Junction Capacitance RDS(on) Limited P = µs W DC P W = s P W = s P W = ms P. W = ms T J(max) = 5 C P W = ms V GS = -V Single Pulse DUT on * MRP Board.. -V DS, DRAIN-SOURCE VOLTAGE (V) Fig. SOA, Safe Operation Area -V GS GATE THRESHOLD VOLTAGE (V) V DS = -5 I D = -3A Q g, TOTAL GATE CHARGE (nc) Fig. Gate Charge r(t), TRANSIENT THERMAL RESISTANCE. D =.. D =.7 D =.5 D =.3 D =.5 D =. D =. D =.9 D =.5 R θja(t) = r(t) * RθJA R θja = C/W Single Pulse Duty Cycle, D = t/ t...... t, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance DMGSVT Document number: DS35 Rev. - of May
DMGSVT Package Outline Dimensions D e E e A A A Suggested Pad Layout x b E x θ L c θ L TSOT Dim Min Max Typ A. A.. A..9 D.9 E. E. b.3.5 c.. e.95 e.9 L.3.5 L.5 θ θ All Dimensions in mm C C Y Y (x) Dimensions Value (in mm) C.95 X.7 Y. Y 3.99 X (x) DMGSVT Document number: DS35 Rev. - 9 of May
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