MITSUBISHI SEMICONDUCTOR TRIC, B, C : NON-INSULTED TYPE, E : INSULTED TYPE, GLSS PSSITION TYPE OUTLINE DRWING Dimensions in mm φ. MIN φ. MIN 4 MX φ8. MX 6. MX 9 MX φ. MX MX IT (RMS)... 6 DRM...4/ IFGT!, IT!, IT #... m T TERMINL T TERMINL GTE TERMINL BCR6 PPLICTION Contactless C switches, light dimmer, on/off and speed control of small induction motors, on/off control of traffic signals, on/off control of copier lamps, solid state relay, microwave ovens MXIMUM RTINGS DRM DSM Repetitive peak off-state voltage Non-repetitive peak off-state voltage 8 4 6 oltage class IT (RMS) ITSM RMS on-state current Surge on-state current Commercial frequency, sine full wave, 6 conduction Conditions BCR6, B, C BCR6E 6Hz sinewave full cycle, peak value, non-repetitive Tc=99 Tb= Ratings 6 I t I t for fusing alue corresponding to cycle of half wave 6Hz, surge on-state current s PGM PG () Peak gate power dissipation verage gate power dissipation. W W GM Peak gate voltage IGM Tj Peak gate current Junction temperature ~ +. Gate open. Feb.999
MITSUBISHI SEMICONDUCTOR TRIC, B, C : NON-INSULTED TYPE, E : INSULTED TYPE, GLSS PSSITION TYPE MXIMUM RTINGS (continue) Tstg Storage temperature Ratings ~ + BCR6. Weight (Typical value) BCR6B BCR6C 8. 8. g Soldering temperature BCR6E BCR6 only, sec. 9. Mounting torque BCR6C only (Typical value).94 kg cm N m iso Isolated voltage BCR6E only, Ta=, C minute, T Terminal to base ELECTRICL CHRCTERISTICS IDRM Repetitive peak off-state current Tj=, DRM applied Min. Limits Typ. Max.. m TM On-state voltage Tc=, Tb= (BCR6E only), ITM=, Instantaneous measurement.6 FGT! T! T # IFGT! IT! IT # GD Rth (j-c) Rth (j-b) Gate trigger voltage Gate trigger current Gate non-trigger voltage Thermal resistance! @ #! @ # Tj=, D=6, RL=, =Ω Tj=, D=6, RL=, =Ω Tj=, D=/DRM Junction to case (BCR6, BCR6B, BCR6C) Junction to base (BCR6E)...... m m m /W /W (dv/dt)c Critical-rate of rise of off-state commutating voltage /µs. Measurement using the gate trigger characteristics measurement circuit.. The critical-rate of rise of the off-state commutating voltage is shown in the table below. oltage class DRM () (dv/dt) c Min. Commutating voltage and current waveforms (inductive load) 8 4 R L R L /µs. Junction temperature Tj=. Rate of decay of on-state commutating current (di/dt)c= 8/ms. Peak off-state voltage D=4 SUPPLY OLTGE MIN CURRENT MIN OLTGE (dv/dt)c (di/dt)c D Feb.999
MITSUBISHI SEMICONDUCTOR TRIC, B, C : NON-INSULTED TYPE, E : INSULTED TYPE, GLSS PSSITION TYPE OUTLINE DRWING Dimensions in mm -φ. MIN BCR6B BCR6C -φ. MIN BCR6E. MX MX 4 MX MX T TERMINL T TERMINL GTE TERMINL φ. MIN. MX φ8. MX ±. MX.8 MX 8 MX. MX (6.) φ. MIN MX 6 MX.9 MX φ8. MX MIN 8. MX MX M6. 6 MX φ. MIN φ. MIN (φ6) ±. φ MX φ. MIN φ8. MX.8 MX MX MX PERFORMNCE CURES MXIMUM ON-STTE CHRCTERISTICS ON-STTE CURRENT () TC = Tb =.4.8..6..4.8..6 4. 4.4 ON-STTE OLTGE () SUE ON-STTE CURRENT () 8 6 4 8 6 4 RTED SUE ON-STTE CURRENT 4 4 (CYCLES T 6Hz) GTE OLTGE () GTE CHRCTERISTICS GM = PG() =.W PGM =.W IGM = GT =. IFGT I, IT I, IT III GD =. 4 GTE CURRENT (m) (%) GTE TRIGGER CURRENT OLTGE (Tj = t) GTE TRIGGER CURRENT OLTGE (Tj = ) GTE TRIGGER CURRENT OLTGE S. JUNCTION TEMPERTURE TEST PROCEDURE Ι, ΙΙ ND ΙΙΙ 8 6 4 8 6 4 GTE TRIGGER CURRENT GTE TRIGGER OLTGE 4 4 6 8 46 JUNCTION TEMPERTURE () Feb.999
MITSUBISHI SEMICONDUCTOR TRIC, B, C : NON-INSULTED TYPE, E : INSULTED TYPE, GLSS PSSITION TYPE TRNSIENT THERML IMPEDNCE (/W).6.4...8.6.4. MXIMUM TRNSIENT THERML IMPEDNCE CHRCTERISTICS (JUNCTION TO CSE) (BCR6, B, C) TRNSIENT THERML IMPEDNCE (/W). 4.8.4..6..8.4 MXIMUM TRNSIENT THERML IMPEDNCE CHRCTERISTICS (JUNCTION TO BSE) (BCR6E) (CYCLES T 6Hz) (CYCLES T 6Hz) ON-STTE POWER DISSIPTION (W) 4 MXIMUM ON-STTE POWER DISSIPTION 6 CONDUCTION RESISTIE, INDUCTIE LODS 4 6 8 4 6 8 CSE TEMPERTURE () 6 4 8 6 LLOWBLE CSE TEMPERTURE S. RMS ON-STTE CURRENT CURES PPLY REGRDLESS OF CONDUCTION NGLE BCR6, BCR6B, BCR6C BCR6E 4 6 CONDUCTION RESISTIE, INDUCTIE LODS 4 6 8 4 6 8 MBIENT TEMPERTURE () LLOWBLE MBIENT TEMPERTURE S. RMS ON-STTE CURRENT (BCR6) 6 6 6 t4. 4 t. 8 8 t. LL FINS RE BLCK PINTED LUMINUM ND GRESED 8 CURES PPLY REGRDLESS 6 OF CONDUCTION NGLE 4 NTURL CONECTION WITH SOLDER : MOUNTING PLTE WITHOUT GRESE 4 6 8 4 6 8 MBIENT TEMPERTURE () LLOWBLE MBIENT TEMPERTURE S. RMS ON-STTE CURRENT (BCR6B) 6 LL FINS RE BLCK PINTED LUMINUM ND GRESED 4 6 6 t4. t. 8 8 t. 8 CURES PPLY REGRDLESS 6 OF CONDUCTION NGLE 4 NTURL CONECTION WITHOUT GRESE : INSULTED PLTE WITH GRESE 4 6 8 4 6 8 Feb.999
MITSUBISHI SEMICONDUCTOR TRIC, B, C : NON-INSULTED TYPE, E : INSULTED TYPE, GLSS PSSITION TYPE MBIENT TEMPERTURE () LLOWBLE MBIENT TEMPERTURE S. RMS ON-STTE CURRENT (BCR6C) 6 LL FINS RE BLCK PINTED LUMINUM ND GRESED 4 NTURL CONECTION 6 6 t4. t. 8 8 t. 8 CURES PPLY 6 REGRDLESS OF CONDUCTION 4 NGLE WITH GRESE : MIC PLTE WITH GRESE 4 6 8 4 6 8 MBIENT TEMPERTURE () 6 4 LLOWBLE MBIENT TEMPERTURE S. RMS ON-STTE CURRENT (BCR6E) 8 6 LL FINS RE BLCK PINTED LUMINUM ND GRESED RESISTIE, INDUCTIE LODS NTURL CONECTION 6 6 t4. t. 8 8 t. 4 CURES PPLY REGRDLESS OF CONDUCTION NGLE 4 6 8 4 6 8 GTE TRIGGER CHRCTERISTICS TEST CIRCUITS 6 6 TEST PROCEDURE TEST PROCEDURE 6 TEST PROCEDURE Feb.999