S-/4PbF Thyristor/Thyristor, 5 A (INT-A-PAK Power Module) INT-A-PAK PRIMARY CHARACTERISTICS I T(A) 5 A Type Modules - thyristor, standard Package INT-A-PAK FEATURES Electrically isolated by DBC ceramic (AI 2 O 3 ) 35 RMS isolating voltage Industrial standard package High surge capability Glass passivated chips Simple mounting UL approved file E78996 Designed and qualified for multiple level Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS Battery charges Welders Power converters MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS ALUES UNITS I T(A) 85 C 5 A I T(RMS) 33 5 Hz 4 A I TSM 6 Hz 42 I 2 t 5 Hz 8 6 Hz 73 ka 2 s I 2 t 8 ka 2 s DRM / RRM 4 T Stg Range -4 to +5 T J Range -4 to +25 C ELECTRICAL SPECIFICATIONS OLTAGE RATINGS TYPE NUMBER RRM / DRM, MAXIMUM REPETITIE PEAK REERSE OLTAGE RSM / DSM, MAXIMUM NON-REPETITIE PEAK REERSE OLTAGE I RRM /I DRM AT 25 C ma S-/4PbF 4 5 5 Revision: 27-Jul-28 Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
S-/4PbF ON-STATE CONDUCTION Maximum average on-state current 5 A I at case temperature T(A) 8 conduction half sine wave 85 C Maximum RMS on-state current I T(RMS) As AC switch 33 t = ms No voltage 4 Maximum peak, one-cycle t = 8.3 ms reapplied 42 A on-state, non-repetitive I TSM surge current t = ms % RRM 335 t = 8.3 ms reapplied Sine half wave, 35 initial T J = t = ms No voltage T J maximum 8 reapplied Maximum I 2 t for fusing I 2 t = 8.3 ms 73 t ka 2 s t = ms % RRM 56 t = 8.3 ms reapplied 5 Maximum I 2 t for fusing I 2 t t =. ms to ms, no voltage reapplied 8 ka 2 s alue of threshold voltage T(TO).82 T J maximum On-state slope resistance r t.44 m Maximum on-state voltage drop TM I pk = x I T(A), T J = 25 C.48 T Maximum holding current I J = 25 C, anode supply = 6, H 2 resistive load, gate open circuit ma Maximum latching current I L T J = 25 C, anode supply = 6, resistive load 4 SWITCHING Typical delay time t gd Gate current = A, dl T J = 25 C g /dt = A/μs Typical rise time t gr d =.67 % DRM 2 μs I Typical turn-off time t TM = 3 A, - dl/dt = 5 A/μs; T J = T J maximum q 5 to 2 R = 5 ; d/dt = 2 /μs; gate, BLOCKING Maximum peak reverse and off-state leakage current I RRM, I DRM T J = 25 C 5 ma RMS insulation voltage INS 5 Hz, circuit to base, all terminals shorted, t = s 35 Critical rate of rise of off-state voltage d/dt T J = T J maximum, exponential to 67 % rated DRM /μs Revision: 27-Jul-28 2 Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
S-/4PbF TRIGGERING Maximum peak gate power P GM t p 5 ms, T J = T J maximum 2 Maximum average gate power P G(A) f = 5 Hz, T J = T J maximum 3 W Maximum peak gate current I GM 3 A Maximum peak negative - gate voltage GT t p 5 ms, T J = T J maximum T J = - 4 C 4 Maximum required DC gate voltage to trigger GT T J = 25 C 2.5 T J = T J maximum Anode supply = 6,.7 T J = - 4 C resistive load; R a = 27 Maximum required DC gate I current to trigger GT T J = 25 C 5 ma T J = T J maximum 8 Maximum gate voltage that will not trigger GD.3 T J = T J maximum, rated DRM applied Maximum gate current I that will not trigger GD ma Maximum rate of rise of turned-on current di/dt T J = T J maximum, I TM = 4 A rated DRM applied 3 A/μs THERMAL AND MECHANICAL SPECIFICATIONS Maximum junction operating temperature range T J -4 to +25 Maximum storage temperature range T Stg -4 to +5 C Maximum thermal resistance, junction to case per junction R thjc DC operation.8 Maximum thermal resistance, case to heatsink per module R thcs Mounting surface smooth, flat and greased.5 K/W Mounting torque ± % Approximate weight Case style IAP to heatsink busbar to IAP A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 4 to 6 Nm 2 g 7. oz. INT-A-PAK R CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT T J MAXIMUM RECTANGULAR CONDUCTION AT T J MAXIMUM DEICES UNITS 8 2 9 6 3 8 2 9 6 3 /4PbF.7..3.6.7.9.2.4.6.7 K/W Note Table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC Revision: 27-Jul-28 3 Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Maximum Average On-state Power Peak Half Sine Wave On-state Current Maximum Allowable Case Temperature ( C) Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature ( C) Maximum Average On-state Power www.vishay.com S-/4PbF 3 2 RthJC (DC) =.82 K/W Conduction Angle 3 25 2 5 DC 2 9 6 3 RMS Limit 3 6 9 9 2 8 2 4 6 8 2 4 6 Average On-state Current (A) 5 Conduction Period Tj = 25 C 5 5 2 25 Average On-state Current (A) Fig. - Current Ratings Characteristics Fig. 4 - Forward Power Loss Characteristics 3 2 RthJC (DC) =.82 K/W Conduction Period 9 3 6 8 9 7 2 DC 6 5 5 2 25 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 36 At Any Rated Load Condition And With 34 Rated rrm Applied Following Surge. 32 Initial Tj = 25 C @ 6 Hz.83 s 3 @ 5 Hz. s 28 26 24 22 2 8 Per Junction 6 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 22 2 2 8 9 6 6 3 4 2 RMS Limit 8 Conduction Angle 6 4 2 Tj = 25 C 2 4 6 8 2 4 6 Average On-state Current (A) Fig. 3 - Forward Power Loss Characteristics (A) 45 4 35 3 25 Maximum Non Repetitive Surge Current ersus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial Tj = 25 C No oltage Reapplied Rated rrm Reapplied 2 Per Junction 5.. Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 27-Jul-28 4 Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Maximum Total Maximum Total Power Maximum Total On-state Power www.vishay.com S-/4PbF 5 4 3 Conduction Angle 2 9 6 3.2 K/W.6 K/W.25 K/W.8 K/W.4 K/W RthSA =. K/W - Delta R 2 Per Module Tj = 25 C.4 K/W.6 K/W K/W 5 5 2 25 3 35 25 5 75 25 Total RMS Output Current (A) Maximum Allowable Ambient Temperature ( C) Fig. 7 - On-State Power Loss Characteristics 9 8 7 6 5 4 3 (Sine) (Rect) 2 x 2 Single Phase Bridge Connected Tj = 25 C 5 5 2 25 3 25 5 75 25 Total Output Current (A).2 K/W.2 K/W.35 K/W.6 K/W.8 K/W.4 K/W Fig. 8 - On-State Power Loss Characteristics RthSA =. K/W - Delta R Maximum Allowable Ambient Temperature ( C) 4 2 Power.8 K/W. K/W.6 K/W RthSA =.4 K/W - Delta R 8 6 2 (Rect) 4 2.25 K/W.4 K/W K/W 2 3 4 5 25 5 75 25 Total Output Current (A) Maximum Allowable Ambient Temperature ( C) Fig. 9 - On-State Power Loss Characteristics Revision: 27-Jul-28 5 Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
S-/4PbF Instantaneous On-state Current (A) Tj = 25 C Tj = 25 C Per Junction.5.5 2 2.5 Instantaneous On-state oltage () Transient Thermal Impedance Z thjc (K/W) Steady State alue RthJC =.82 K/W (DC Operation)...... Square Wave Pulse Duration (s) Fig. - On-State oltage Drop Characteristics Fig. - Thermal Impedance Z thjc Characteristics Instantaneous Gate oltage () Rectangular gate pulse a)recommended load line for rated di/dt: 2, 2 ohms tr =.5 µs, tp >= 6 µs b)recommended load line for <= 3% rated di/dt: 5, 4 ohms tr = µs, tp >= 6 µs TJ = 25 C (b) TJ = 25 C (a) TJ = -4 C GD IGD Frequency Limited by PG(A).... Instantaneous Gate Current (A) Fig. 2 - Gate Characteristics () PGM = 2 W, tp = 3 µs (2) PGM = 6 W, tp = ms (3) PGM = 3 W, tp = 2 ms (4) PGM = 2 W, tp = 5 ms (4) (3) (2) () Revision: 27-Jul-28 6 Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
S-/4PbF ORDERING INFORMATION TABLE Device code S-S KT 52 4 PbF 2 3 4 5 2 - - product Circuit configuration 3 - Current rating 4 - oltage rating (4 = 4 ) 5 - PbF = Lead (Pb)-free Note To order the optional hardware go to www.vishay.com/doc?9572 CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING ~ Two SCRs doubler circuit T 2 2 + 3 5 4 7 6 3 5 4-6 7 Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9567 Revision: 27-Jul-28 7 Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Outline Dimensions INT-A-PAK IGBT/Thyristor DIMENSIONS in millimeters (inches) 3 (.8) 9 (.33) 28 (.) 29 (.5) 7 (.28) Ø 6.5 (.25 DIA) 8 (3.5) 7 (.67) 23 (.9) 23 (.9) 5 (.2) 35 (.38) 5 7 6 2.8 x.8 (. x.3) 4.5 (.57) 2 3 4 3 screws M6 x 66 (2.6) 37 (.44) 94 (3.7) Document Number: 9567 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 5-Feb-8
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