FDD5N50FTM-WS N-Channel UniFET TM FRFET MOSFET 500 V, 3.5 A,.55 Ω Features R DS(on) =.25Ω (Typ.) @ V GS = 0 V, I D =.75 A Low Gate Charge (Typ. nc) Low C rss (Typ. 5 pf) Fast Switching 00% Avalanche Tested Improved dv/dt Capability RoHS Compliant Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply D Description UniFET TM MOSFET is ON Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode s reverse recovery performance of UniFET FRFET MOSFET has been enhanced by lifetime control. Its trr is less than 00nsec and the reverse dv/dt immunity is 5V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G S D-PAK G MOSFET Maximum Ratings T C = 25 o C unless otherwise noted. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 500 V V GSS Gate to Source Voltage ±30 V I D Drain Current Thermal Characteristics - Continuous (T C = 25 o C) 3.5 - Continuous (T C = 00 o C) 2. I DM Drain Current - Pulsed (Note ) 4 A E AS Single Pulsed Avalanche Energy (Note 2) 257 mj I AR Avalanche Current (Note ) 3.5 A E AR Repetitive Avalanche Energy (Note ) 4 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 o C) 40 W - Derate Above 25 o C 0.3 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering, /8 from Case for 5 Seconds 300 o C Symbol Parameter Ratings Units R θjc Thermal Resistance, Junction to Case, Max..4 o C/W R θja Thermal Resistance, Junction to Ambient, Max. 0 S A 2007 Semiconductor Components Industries, LLC. September-207, Rev. 3 Publication Order Number: FDD5N50FTM-WS/D
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDD5N50FTM-WS FDD5N50F D-PAK Tape and Reel 330 mm 6 mm 2500 units Electrical Characteristics T C = 25 o C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250 μa, V GS = 0 V, T J = 25 o C 500 - - V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient I D = 250 μa, Referenced to 25 o C - 0.6 - V/ o C V I DSS Zero Gate Voltage Drain Current DS = 500 V, V GS = 0 V - - 0 μa V DS = 400 V, T C = 25 o C - - 00 I GSS Gate to Body Leakage Current V GS = ±30 V, V DS = 0 V - - ±00 na On Characteristics V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250 μa 3.0-5.0 V R DS(on) Static Drain to Source On Resistance V GS = 0 V, I D =.75 A -.25.55 Ω g FS Forward Transconductance V DS = 20 V, I D =.75 A - 4.3 - S Dynamic Characteristics C iss Input Capacitance - 490 650 pf V DS = 25 V, V GS = 0 V C oss Output Capacitance - 66 88 pf f = MHz C rss Reverse Transfer Capacitance - 5 7.5 pf Q g(tot) Total Gate Charge at 0V - 5 nc Q gs Gate to Source Gate Charge V DS = 400 V, I D = 5 A, - 3 - nc Q gd Gate to Drain Miller Charge V GS = 0 V - 5 - nc Switching Characteristics t d(on) Turn-On Delay Time - 3 36 ns t r Turn-On Rise Time V DD = 250 V, I D = 5 A - 22 54 ns t d(off) Turn-Off Delay Time R G = 25 Ω - 28 66 ns t f Turn-Off Fall Time (Note 4) - 20 50 ns (Note 4) Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 3.5 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 4 A V SD Drain to Source Diode Forward Voltage V GS = 0 V, I SD = 3.5 A - -.5 V t rr Reverse Recovery Time V GS = 0 V, I SD = 5 A - 65 - ns Q rr Reverse Recovery Charge di F /dt = 00 A/μs - 0.20 - μc Notes: : Repetitive rating: pulse-width limited by maximum junction temperature. 2: L = 42 mh, I AS = 3.5 A, V DD = 50 V, R G = 25 Ω, starting T J = 25 C. 3: I SD 3.5 A, di/dt 200 A/μs, V DD BV DSS, starting T J = 25 C. 4: Essentially independent of operating temperature typical characteristics. 2
Typical Performance Characteristics ID,Drain Current[A] RDS(ON) [Ω], Drain-Source On-Resistance Figure. On-Region Characteristics 0 0. V GS = 5.0V 0.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V. 250μs Pulse Test 2. T C = 25 o C 0.04 0. 0 V DS,Drain-Source Voltage[V] Figure 2. Transfer Characteristics. V DS = 20V 2. 250μs Pulse Test 0. 4 5 6 7 8 V GS,Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 2.2 2.0.8.6.4 V GS = 0V V GS = 20V *Note: T J = 25 o C.2 0 4 8 2 6 20 I D, Drain Current [A] ID,Drain Current[A] IS, Reverse Drain Current [A] 20 0 50 0 50 o C 50 o C 25 o C 25 o C. V GS = 0V 2. 250μs Pulse Test 0.2 0.0 0.4 0.8.2.6 V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics 000 750 500 250 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C iss C oss *Note:. V GS = 0V 2. f = MHz VGS, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics 0 8 6 4 2 V DS = 00V V DS = 250V V DS = 400V C rss 0 0. 0 V DS, Drain-Source Voltage [V] *Note: I D = 5A 0 30 0 3 6 9 2 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature.2..0 0.9. V GS = 0V 2. I D = 250μA 0.8-75 -25 25 75 25 75 T J, Junction Temperature [ o C] Figure 9. Maximum Drain Current ID, Drain Current [A] 4 3 2 Figure 8. Maximum Safe Operating Area ID, Drain Current [A] 30 0 0. Operation in This Area is Limited by R DS(on) ms 0ms 00μs. T C = 25 o C 40μs 2. T J = 50 o C 3. Single Pulse 0.0 0 00 000 V DS, Drain-Source Voltage [V] DC 0 25 50 75 00 25 50 T C, Case Temperature [ o C] Z θjc (t), Thermal Response [ o C/W] Thermal Response [Z θjc ] 3 0. Figure 0. Transient Thermal Response Curve 0.5 0.2 0. 0.05 0.02 0.0 0.0. Z θjc (t) =.4 o C/W Max. Single pulse 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) 0.003 0-5 0-4 0-3 0-2 0-0 0 0 0 2 P DM t, Rectangular Pulse Duration [sec] t t 2 4
I G = const. Figure. Gate Charge Test Circuit & Waveform R L V V DS DS 90% V V GS DD R G V 0V GS DUT 0% V GS t d(on) t r t d(off) tf t on t off Figure 2. Resistive Switching Test Circuit & Waveforms V GS Figure 3. Unclamped Inductive Switching Test Circuit & Waveforms 5
V GS R G DUT I SD Driver + V DS _ L Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD V GS ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 0V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Figure 4. Peak Diode Recovery dv/dt Test Circuit & Waveforms 6
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