Features Functional Block Diagram Wide bandwidth Single positive supply voltage Low noise figure Pb-free RoHs compliant 4x4 QFN package Description The CMD233C4 is a wideband GaAs MMIC low noise amplifier housed in a leadless 4x4 mm surface mount package. The CMD233C4 is ideally suited for military, space and communications systems where small size and low noise figure are needed over a wide bandwidth. At GHz the device delivers greater than 9 db of gain with a corresponding noise figure of 4. db and an output 1 db compression point of +2. dbm. The CMD233C4 is a ohm matched design which eliminates the need for external DC blocks and RF port matching. Electrical Performance V dd =. V, T A = 2 o C, F= GHz Parameter Min Typ Max Units Frequency Range 2 18 GHz Gain 9 db Noise Figure 4. db Input Return Loss db Output Return Loss 2 db Output P1dB 2. dbm Supply Current 12 ma
Specifications Absolute Maximum Ratings Parameter Rating Drain Voltage, Vdd 7 V RF Input Power +23 dbm Channel Temperature, Tch C Power Dissipation, Pdiss 88 mw Thermal Resistance 8.4 C/W Operating Temperature -4 to 8 C Storage Temperature - to C Recommended Operating Conditions Parameter Min Typ Max Units Vdd 3.. 6. V Idd 12 ma Electrical performance is measured at specific test conditions. Electrical specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the maximum ratings may cause permanent damage. Electrical Specifications V dd =. V, T A = 2 o C Parameter Min Typ Max Min Typ Max Min Typ Max Units Frequency Range 2 6 6 14 14 18 GHz Gain 7 9. 12 6. 8. 11. 6. 9 11. db Noise Figure. 6. 4.. 6. db Input Return Loss 12 db Output Return Loss 16 2 db Output P1dB 21 2. 2. dbm Output IP3 2. 24 22 dbm Supply Current 8 12 8 12 8 12 ma Gain Temperature Coefficient Noise Figure Temperature Coefficient.2.2.2 db/ C.1.1.1 db/ C
Typical Performance Broadband Performance, V dd =. V, I dd = 12 ma, T A = 2 o C 8 7 Response/dB - - S11 S22 S21 NF 6 4 3 Noise Figure/dB - 2-2 1-2 2 4 6 8 12 14 16 18 2 22 24 26 Narrow-band Performance, V dd =. V, I dd = 12 ma, T A = 2 o C 8 7 Response/dB - - S11 S22 S21 NF 6 4 3 Noise Figure/dB - 2-2 1-2 2 4 6 8 12 14 16 18
Typical Performance Gain vs. Temperature, V dd =. V 14 13 12 +2C +8C -C 11 9 Gain/dB 8 7 6 4 3 2 1 2 3 4 6 7 8 9 11 12 13 14 16 17 18 Gain vs. Supply Voltage, T A = 2 o C 14 13 12 Vdd=3V Vdd=4V Vdd=V 11 9 Gain/dB 8 7 6 4 3 2 1 2 3 4 6 7 8 9 11 12 13 14 16 17 18
Typical Performance Noise Figure vs. Temperature, V dd =. V 9 8 +2C +8C -C 7 Noise Figure/dB 6 4 3 2 1 3 4 6 7 8 9 11 12 13 14 16 17 18 Noise Figure vs. Supply Voltage, T A = 2 o C 9 8 Vdd=3V Vdd=4V Vdd=V 7 Noise Figure/dB 6 4 3 2 1 3 4 6 7 8 9 11 12 13 14 16 17 18
Typical Performance P1dB vs. Temperature, V dd =. V 2 24 23 22 +2C +8C -C P1dB/dBm 21 2 19 18 17 16 14 13 12 11 2 3 4 6 7 8 9 11 12 13 14 16 17 18 P1dB vs. Supply Voltage, T A = 2 o C 2 24 23 22 Vdd=3V Vdd=4V Vdd=V P1dB/dBm 21 2 19 18 17 16 14 13 12 11 2 3 4 6 7 8 9 11 12 13 14 16 17 18
Typical Performance Output IP3 vs. Temperature, V dd =. V 3 29 28 27 +2C +8C -C Output IP3/dBm 26 2 24 23 22 21 2 19 18 17 16 2 3 4 6 7 8 9 11 12 13 14 16 17 18 Output IP3 vs. Supply Voltage, T A = 2 o C 3 29 28 27 Vdd=3V Vdd=4V Vdd=V Output IP3/dBm 26 2 24 23 22 21 2 19 18 17 16 2 3 4 6 7 8 9 11 12 13 14 16 17 18
Typical Performance Output Power, Vdd =. V, T A = 2 o C 2 24 23 22 21 2 Response/dBm 19 18 17 16 14 P1dB Psat 13 12 11 2 3 4 6 7 8 9 11 12 13 14 16 17 18
Mechanical Information Package Information and Dimensions Recommended PCB Land Pattern Design Services recommends that the user develop the land pattern that will provide the best design for proper solder reflow and device attach for their specific application. Please review Application Note AN for a recommended land pattern approach. Recommended Solder Reflow Profile Design Services recommends screen printing with belt furnace reflow to ensure proper solder reflow and device attach. Please review Application Note AN 2 for a recommended solder reflow profile.
Pin Description Functional Description Pin Function Description Schematic 1, 2, 6-9, 13, 17, 18, 2-24 N/C No connection required. These pins may be connected to RF/DC ground 3,, -12, 14, 16 and die paddle Ground Connect to RF/DC ground GND 4 RF in DC blocked and ohm matched RF in RF out DC blocked and ohm matched RF out 19 Vdd Power supply voltage Decoupling and bypass caps required Vdd
Applications Information Application Circuit Biasing and Operation The CMD233C4 is biased with a single positive drain supply. Performance is optimized when the drain voltage is set to +. V. Turn ON procedure: 1.Apply drain voltage V dd and set to + V Turn OFF procedure: 1.Turn off drain voltage V dd RF power can be applied at any time. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Applications Information Evaluation Board The circuit board shown has been developed for optimized assembly at. A sufficient number of via holes should be used to connect the top and bottom ground planes. As surface mount processes vary, careful process development is recommended. Designator Value Description J1, J2 SMA End Launch Connector P1 Pin Header C2.33 µf Capacitor, Tantalum C4 pf Capacitor, 63 C6 pf Capacitor, 42 U1 PCB CMD233C4 Low Noise Amplifier CM76A Evaluation PCB Please note, all information contained in this data sheet is subject to change without notice.