PD 946E RG4P30U NSULTED GTE BPOLR TRNSSTOR UltraFast Speed GBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT design provides tighter parameter distribution and higher efficiency than Generation 3 ndustry standard TO-247 package G E n-channel V ES = 600V V E(on) typ. =.95V @V GE = 5V, = 2 Benefits Generation 4 GBT's offer highest efficiency available GBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 R GBT's bsolute Maximum Ratings TO-247 Parameter Max. Units V ES ollector-to-emitter Breakdown Voltage 600 V @ T = 25 ontinuous ollector urrent 23 @ T = 0 ontinuous ollector urrent 2 M Pulsed ollector urrent 92 LM lamped nductive Load urrent 92 V GE Gate-to-Emitter Voltage ± 20 V E RV Reverse Voltage valanche Energy ƒ mj P D @ T = 25 Maximum Power Dissipation 0 P D @ T = 0 Maximum Power Dissipation 42 W T J Operating Junction and -55 to + 50 T STG Storage Temperature Range Soldering Temperature, for seconds 300 (0.063 in. (.6mm from case ) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θj Junction-to-ase.2 R θs ase-to-sink, Flat, Greased Surface 0.24 /W R θj Junction-to-mbient, typical socket mount 40 Wt Weight 6 (0.2) g (oz) www.irf.com 2/30/00
RG4P30U Electrical haracteristics @ T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage 600 V V GE = 0V, = 250µ V (BR)ES Emitter-to-ollector Breakdown Voltage 8 V V GE = 0V, =.0 V (BR)ES/ T J Temperature oeff. of Breakdown Voltage 0.63 V/ V GE = 0V, =.0m.95 2. = 2 V GE = 5V V E(ON) ollector-to-emitter Saturation Voltage 2.52 = 23 See Fig.2, 5 V 2.09 = 2, T J = 50 V GE(th) Gate Threshold Voltage 3.0 6.0 V E = V GE, = 250µ V GE(th) / T J Temperature oeff. of Threshold Voltage -3 mv/ V E = V GE, = 250µ g fe Forward Transconductance 3. 8.6 S V E = 0 V, = 2 250 V GE = 0V, V E = 600V ES Zero Gate Voltage ollector urrent µ 2.0 V GE = 0V, V E = V, T J = 25 00 V GE = 0V, V E = 600V, T J = 50 GES Gate-to-Emitter Leakage urrent ±0 n V GE = ±20V Switching haracteristics @ T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) 50 75 = 2 Q ge Gate - Emitter harge (turn-on) 8. 2 n V = 400V See Fig.8 Q gc Gate - ollector harge (turn-on) 8 27 V GE = 5V t d(on) Turn-On Delay Time 7 t r Rise Time 9.6 T J = 25 ns t d(off) Turn-Off Delay Time 78 20 = 2, V = 480V t f Fall Time 97 50 V GE = 5V, R G = 23Ω E on Turn-On Switching Loss 0.6 Energy losses include "tail" E off Turn-Off Switching Loss 0.20 mj See Fig.,, 3, 4 E ts Total Switching Loss 0.36 0.50 t d(on) Turn-On Delay Time 20 T J = 50, t r Rise Time 3 = 2, V = 480V ns t d(off) Turn-Off Delay Time 80 V GE = 5V, R G = 23Ω t f Fall Time 40 Energy losses include "tail" E ts Total Switching Loss 0.73 mj See Fig. 3, 4 L E nternal Emitter nductance 3 nh Measured 5mm from package ies nput apacitance 0 V GE = 0V oes Output apacitance 73 pf V = 30V See Fig. 7 res Reverse Transfer apacitance 4 ƒ =.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V = 80%(V ES ), V GE = 20V, L = µh, R G = 23Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2 www.irf.com
RG4P30U Load urrent () 40 30 20 Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 25 T sink = 90 Gate drive as specified Power Dissipation = 24W Triangular wave: lamp voltage: 80% of rated deal diodes 0 0. 0 f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (For square wave, = RMS of fundamental; for triangular wave, = PK ) 0 0, ollector-to-emitter urrent () T J = 25 T J = 50 V GE = 5V 0. 20µ s PULSE W DTH 0. V E, ollector-to-em itter Voltag e (V), ollector-to-emitter urrent () T J = 50 T J = 25 V = V 0. 5µs PULSE WDTH 5 6 7 8 9 2 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics www.irf.com 3
RG4P30U Maximum D ollector urrent ( 25 20 5 5 V GE = 5V V E, ollector-to-emitter Voltage (V) 3.0 2.5 2.0 V GE = 5V 80µ s PULSE W DTH = 24 = 2 = 6.0 0 25 50 75 0 25 50 T, ase Temperature ( ).5-60 -40-20 0 20 40 60 80 0 20 40 60 T, Junction Temperature ( ) J Fig. 4 - Maximum ollector urrent vs. ase Temperature Fig. 5 - ollector-to-emitter Voltage vs. Junction Temperature Thermal Response (Z thj ) 0. D = 0.50 0.20 0. 0.05 0.02 0.0 SN G LE P ULSE (THERML RESPONSE) 2. Peak T J = P DM x Z thj + T 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Notes:. Duty factor D = t / t 2 P DM t t 2 Fig. 6 - Maximum Effective Transient Thermal mpedance, Junction-to-ase 4 www.irf.com
RG4P30U, apacitance (pf) 2000 600 200 800 400 V GE = 0V, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res V GE, Gate-to-Em itter Voltage (V) 20 6 2 8 4 V E = 400V = 2 0 0 V E, ollector-to-emitter Voltage (V) 0 0 20 30 40 50 Q g, Total Gate harg e (n) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 0.5 0.4 0.3 V = 480V V GE = 5V T J = 25 = 2 Total Switching Losses (mj) R V V G GE = 23 Ω = 5V = 480V = 2 4 = 2 = 6.0 0.2 0 20 30 40 50 60 R G, Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance 0. -60-40 -20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( ) Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
RG4P30U Total Switching Losses (mj).6.2 0.8 0.4 R G = 23 Ω T J = 50 V = 480V V GE = 5V, ollector-to-emitter urrent () 00 0 V GE = 20V T = 25 J SFE OPERTNG RE 0.0 0 20 30, ollector-to-emitter urrent () 0. 0 00 V, ollector-to-emitter Voltage (V) E Fig. - Typical Switching Losses vs. ollector-to-emitter urrent Fig. 2 - Turn-Off SO 6 www.irf.com
RG4P30U 50V 00V L V * D.U.T. 0-480V 480µF 960V R L = 480V 4 X @25 * Driver same ty pe as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor w ill increase to obtain rated d. Fig. 3a - lamped nductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit 50V 00V L Driver* D.U.T. V ƒ Fig. 4a - Switching Loss Test ircuit * Driver same type as D.U.T., V = 480V 90% ƒ % V 90% t d(off) Fig. 4b - Switching Loss Waveforms 5% % t d(on) t r E on t f E off t=5µs E ts = (E on +E off ) www.irf.com 7
RG4P30U ase Outline and Dimensions TO-247 * 20.30 (.800) 9.70 (.775) 4.80 (.583) 4.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.25) 2X 5.90 (.626) 5.30 (.602) - B - 2 3.40 (.056) 3X.00 (.039) 0.25 (.0) M S 3.40 (.33) 3.00 (.8) 3.65 (.43) 3.55 (.40) 0.25 (.0) M D - - 5.50 (.27) 2X - - 4.30 (.70) 3.70 (.45) 5.50 (.27) 4.50 (.77) B M - D - 5.30 (.209) 4.70 (.85) 2.50 (.089).50 (.059) 4 0.80 (.03) 3X 0.40 (.06) 2.60 (.2) 2.20 (.087) NOTES: DMENSONS & TOLERNNG PER NS Y4.5M, 982. 2 ONTROLLNG DMENSON : NH. 3 DM ENSONS RE SHO W N M LLM ETER S (NHES). 4 O NFO RM S TO JEDE O UTLNE TO-247. LED SSGNMENTS - GTE 2 - OLLETO R 3 - EM TTER 4 - OLLETO R * LONGER LEDED (20mm) VERSON VLBLE (TO-247D) TO ORDER DD "-E" SUFFX TO PRT NUMBER ONFORMS TO JEDE OUTLNE TO-247 (TO-3P) Dimensions in Millimeters and (nches) R WORLD HEDQURTERS: 233 Kansas St., El Segundo, alifornia 90245, US Tel: (3) 252-75 T Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 2/00 8 www.irf.com
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