Dual 58mW Headphone Amplifier GENERAL DESCRIPTION The SGM4809 is a dual audio power amplifier capable of delivering 58mW per channel of continuous average power with less than 0.% distortion(thd N)when it drives a 6Ω speaker from a 5.0V power supply. It is designed to maximize audio performance in portable applications such as mobile phone. The portable application requires audio power amplifier has minimum of external components and can operate from a single 2.5V to 5.5V power supply. SGM4809 features an externally controlled, active-low, micropower consumption shutdown mode, as well as an internal thermal shutdown protection mechanism. FEATURES Active-Low Shutdown Mode 58mW into 6Ω Load from 5V Power Supply at THDN = 0.% Typical (per Channel) 87mW into 32Ω Load from 5V Power Supply at THDN = 0.% Typical (per Channel) Unity Gain Stable Shutdown Current: 0.6µA (TYP) 2.5V to 5.5V Operation Shutdown Pin is Compatible with.8v Logic Click and Pop Reduction Circuitry -40 to 85 Operating Temperature Range Pb-Free MSOP-8 Package SGM4809 does not require bootstrap capacitors or snubber networks. It is optimally suited for low-power portable systems. For maximum flexibility, the SGM4809 provides an externally controlled gain (with resistors), as well as an externally controlled turn-on time (with the bypass capacitor). The SGM4809 is available in Pb-free MSOP-8 package. It operates over an ambient temperature range of -40 to 85. APPLICATIONS Portable Systems Headphone Amplifier Microphone Preamplifier Notebook Computers Mobile Phone PDAs GPS REV. A
Dual 58mW Headphone Amplifier PACKAGE/ORDERING INFORMATION PACKAGE PACKAGE MARKING MODEL ORDER NUMBER DESCRIPTION OPTION INFORMATION SGM4809 SGM4809YMS/TR MSOP-8 Tape and Reel, 3000 SGM4809YMS PIN CONFIGURATION (Top View) ABSOLUTE MAXIMUM RATINGS V O SGM4809YMS 8 V Supply Voltage... 6V Input Voltage. -0.3V to (V ) 0.3V Storage Temperature Range... -65 to 50 Junction Temperature..50 V IN Bypass GND 2 7 3 6 4 5 V O2 V IN2 SHDN Operating Temperature Range.. -40 to 85 Lead Temperature Range (Soldering 0 sec)..... 260 ESD Susceptibility HBM... 4KV MM... 400V CAUTION MSOP-8 This integrated circuit can be damaged by ESD if you don t pay attention to ESD protection. SGMICRO recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. NOTES. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2
Dual 58mW Headphone Amplifier ELECTRICAL CHARACTERISTICS: T A = 25 C PARAMETER SYMBOL CONDITIONS SGM4809 MIN TYP MAX Supply Voltage V 2.5 5.5 V Shutdown Current Output Offset Voltage Quiescent Power Supply Current I SD V OS I Q V IN = 0V, V SHDN = GND, V = 5.0V 0.6 4 V IN = 0V, V SHDN = GND, V = 3.3V 0.8 V IN = 0V, V SHDN = GND, V = 2.6V 0. V IN = 0V, V SHDN = V = 5.0V -50 5.3 50 V IN = 0V, V SHDN = V = 3.3V -50 4.7 50 V IN = 0V, V SHDN = V = 2.6V -50 4.4 50 V IN = 0V, V SHDN = V V = 5.0V, No Load.83 2.8 V = 3.3V, No Load.72 V = 2.6V, No Load.65 Shutdown Voltage Input High V SDIH.8 V Shutdown Voltage Input Low V SDIL 0.4 V Output Power (per Channel) Total Harmonic Distortion Noise P O THDN f = khz THDN = 0.% V = 5.0V V = 3.6V V = 3.0V V = 2.6V P O = 78mW, V = 5.0V, R L = 32Ω, f = 20Hz to 20kHz R L = 6Ω 58 R L = 32Ω 87 R L = 6Ω 84 R L = 32Ω 47 R L = 6Ω 58 R L = 32Ω 33 R L = 6Ω 42 R L = 32Ω 25 UNITS µa mv ma mw 0.3 % Crosstalk X talk R L = 32Ω, P O = 70mW, V = 5V, f = khz -00 db Power Supply Rejection Ratio PSRR Specifications subject to changes without notice. f = 27Hz f = khz V = 5.0V -62 V = 3.6V -62 V = 3.0V -62 V = 2.6V -62 V = 5.0V -7 V = 3.6V -7 V = 3.0V -7 V = 2.6V -7 db 3
Dual 58mW Headphone Amplifier TYPICAL APPLICATION R F V C S µf C I 0.47µF R I V IN Audio Input V IH V IL Shutdown Control SHDN BIAS V _ C 0 V O 00µF R L 32Ω C B.0 µf Bypass Audio Input C I 0.47µF R I V IN2 _ V O2 C 0 00µF R L 32Ω GND R F 4
Dual 58mW Headphone Amplifier TYPICAL PERFORMANCE CHARACTERISTICS Large Signal Step Response Small Signal Step Response Output Voltage (500mV/div) V = 3V Output Voltage (50mV/div) V = 3V Time (2µs/div) Time (0.5µs/div) Large Signal Step Response Small Signal Step Response Output Voltage (500mV/div) V = 5V Output Voltage (50mV/div) V = 5V Time (2µs/div) Time (µs/div) Small Signal Frequency Response Small Signal Frequency Response Normalized Gain (db) 3 0-3 -6 V = 3V, R L = 32Ω, V IN = -0dBm Normalized Gain (db) 3 0-3 -6 V = 5V, R L = 32Ω, V IN = -0dBm -9 0.0 0. 0 Frequency (MHz) -9 0.0 0. 0 Frequency (MHz) 5
Dual 58mW Headphone Amplifier TYPICAL PERFORMANCE CHARACTERISTICS THDN vs. Output Power per Channel THDN vs. Output Power per Channel 0 V = 5V, R L = 32Ω, f = khz, A V = -, BW < 80kHz 0 V = 3V, R L = 32Ω, f = khz, A V = -, BW < 80kHz THDN (%) 0. 0.0 THDN (%) 0. 0.0 0.00 0.0 0. Output Power (W) 0.00 0.0 0. Output Power (W) THDN vs. Output Power per Channel THDN vs. Output Power per Channel 0 V = 5V, R L = 6Ω, f = khz, A V = -, BW < 80kHz 0 V = 3V, R L = 6Ω, f = khz, A V = -, BW < 80kHz THDN (%) 0. THDN (%) 0. 0.0 0.0 0.00 0.0 0. Output Power (W) 0.00 0.0 0. Output Power (W) THDN vs. Frequency THDN vs. Frequency THDN (%) 0. 0.0 V = 5V, R L = 32Ω, P O = 80mW THDN (%) 0. 0.0 V = 3V, R L = 32Ω, P O = 25mW 0.00 0.0 0. 0 00 Frequency (khz) 0.00 0.0 0. 0 00 Frequency (khz) 6
TYPICAL PERFORMANCE CHARACTERISTICS Dual 58mW Headphone Amplifier Supply Current (ma) 2.8.6.4.2 Supply Current vs. Supply Voltage V IN = 0V No Load 0 2 3 4 5 6 Supply Voltage (V) Dropout Voltage (mv) Dropout Voltage vs. Supply Voltage 600 400 200 000 8Ω, TOP 800 600 8Ω, BOTTOM 400 32Ω,TOP 200 32Ω, BOTTOM 0.5 2 2.5 3 3.5 4 4.5 5 5.5 Supply Voltage (V) 7
Dual 58mW Headphone Amplifier PACKAGE OUTLINE DIMENSIONS MSOP-8 b C L Symbol Dimensions In Millimeters Dimensions In Inches E E Min Max Min Max A 0.800.200 0.03 0.047 A 0.000 0.200 0.000 0.008 A2 0.760 0.970 0.030 0.038 b 0.30 TYP 0.02 TYP e A θ A2 A C 0.5 TYP 0.006 TYP D 2.900 3.00 0.4 0.22 e 0.65 TYP 0.026 TYP E 2.900 3.00 0.4 0.22 E 4.700 5.00 0.85 0.20 L 0.40 0.650 0.06 0.026 θ 0 6 0 6 D 04/2008 REV. A SGMICRO is dedicated to provide high quality and high performance analog IC products to customers. All SGMICRO products meet the highest industry standards with strict and comprehensive test and quality control systems to achieve world-class consistency and reliability. For information regarding SGMICRO Corporation and its products, see 8