NCP ma CMOS Low Dropout Regulator

Similar documents
NCP153. LDO Regulator, Dual, 130 ma, Low I Q

NCP ma CMOS Low Dropout Regulator

NCP170. Ultra Low I Q 150 ma CMOS LDO Regulator

NCP ma, Ultra-Low Quiescent Current, I Q 13 A, Ultra-Low Noise, LDO Voltage Regulator

NCV8170. Ultra Low I Q 150 ma CMOS LDO Regulator

NCP110. Linear Regulator, Low V IN, Low Noise and High PSRR, 200 ma

NCP ma, Ultra-Low Noise and High PSRR LDO Regulator for RF and Analog Circuits

NCP ma, Very Low Dropout Bias Rail CMOS Voltage Regulator

NCP170. Ultra Low I Q 150 ma CMOS LDO Regulator

NCV ma, Ultra-Low Noise and High PSRR LDO Regulator for RF and Analog Circuits

NCP ma Ultra-Low Noise Very-Low Iq, High PSRR, LDO Linear Voltage Regulator

NCP786L. Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage

NCP ma, Wide Input Voltage Range, Low Dropout Regulator

NCP ma, 10 V, Low Dropout Regulator

NCP A Low Dropout Linear Regulator

NCP mA, Very Low Dropout Bias Rail CMOS Voltage Regulator

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator

NCV ma, Ultra-Low Quiescent Current, I Q 13 A, Ultra-Low Noise, LDO Voltage Regulator

NCP170. Ultra Low I Q 150 ma CMOS LDO Regulator

NCP334, NCP335. 2A Ultra-Small Controlled Load Switch with Auto-Discharge Path

NCP694. 1A CMOS Low-Dropout Voltage Regulator

NCV8177. Linear Voltage Regulator Fast Transient Response 500 ma with Enable

NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output

NCP115. LDO Regulator, 300 ma, High PSRR

NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection

NCP ma, Low Noise Low Dropout Regulator

NCV4264-2C. Low I Q Low Dropout Linear Regulator

NCP ma, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator

NCV ma, Ultra-Low Quiescent Current, I Q 13 A, Ultra-Low Noise, LDO Voltage Regulator

NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL

NCV ma, Ultra-Low Quiescent Current, I Q 12 A, Ultra-Low Noise, LDO Voltage Regulator

NCP59302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series

NCV ma Micropower Precision Voltage Reference

NCP ma, Low Dropout Voltage Regulator with Reverse Current Protection

NCP ma, 10 V, Low Dropout Regulator

NCV4266-2C 150 ma Low I q, Low-Dropout Voltage Regulator with Enable

NCP57302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator

FPF1005-FPF1006 IntelliMAX TM Advanced Load Management Products

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package

NUF6010MUT2G. 6-Channel EMI Filter with Integrated ESD Protection

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

NCP ma, Dual Rail Ultra Low Dropout Linear Regulator

NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

NCP605, NCP mA, Low I GND, CMOS LDO Regulator with/without Enable and with Enhanced ESD Protection

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NCP700C. 200 ma, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator

NCP752. PDAs, Mobile phones, GPS, Smartphones Wireless Handsets, Wireless LAN, Bluetooth, Zigbee Portable Medical and Other Battery Powered Devices

NCP400. Memory Cards Cellular Phones Digital Still Cameras and Camcorders Battery Powered Equipment. MARKING DIAGRAM.

NCP508. Very Low Noise, Fast Turn On, 50 ma Low Dropout Voltage Regulator

NCP ma, Very Low Dropout Bias Rail CMOS Voltage Regulator

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723

NCV8774. Ultra Low I q 350 ma LDO Regulator

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k

NCP698. Battery Powered Instruments Hand Held Instruments Camcorders and Cameras. Features PIN CONNECTIONS & MARKING DIAGRAMS

NCV mA, Very Low Dropout Bias Rail CMOS Voltage Regulator

MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3. Digital Transistors (BRT) R1 = 47 k, R2 = 47 k

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88

NCV4264-2C. Linear Regulator, Low Dropout, Low I Q

MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k

NTLUF4189NZ Power MOSFET and Schottky Diode

NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.

NUF4401MNT1G. 4-Channel EMI Filter with Integrated ESD Protection

CAT3200HU2. Low Noise Regulated Charge Pump DC-DC Converter

NCP331. Soft-Start Controlled Load Switch with Auto Discharge

NCP3334. High Accuracy, Ultra Low Iq, 500 ma Adjustable Low Dropout Regulator

NUF8001MUT2G. 8-Channel EMI Filter with Integrated ESD Protection

NCP553, NCV ma CMOS Low Iq NOCAP Voltage Regulator

FPF2498. Adjustable OVP with 28 V Input OVT Load Switch. Cellular Phones, Smart Phones Tablets. FPF2498 Evaluation Board

NCP5426. LDO Regulator/Vibration Motor Driver

NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V

NCP451. 3A Ultra-Small Low Ron and Controlled Load Switch with Auto-Discharge Path

EFC2J013NUZ/D. Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 5.8 mω, 17 A, Dual N-Channel

NCV ma High Performance CMOS LDO Regulator with Enable and Enhanced ESD Protection

NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE

NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features

General Description. Applications. Power management Load switch Q2 3 5 Q1

NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m

NVMFD5C478NL. Power MOSFET. 40 V, 14.5 m, 29 A, Dual N Channel

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89

NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel

NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m

NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant

NLHV18T Channel Level Shifter

LM321. Single Channel Operational Amplifier

BAV ma 70 V High Conductance Ultra-Fast Switching Diode

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET

MC79L00A Series. 100 ma Negative Voltage Regulators THREE TERMINAL LOW CURRENT NEGATIVE FIXED VOLTAGE REGULATORS

NCP ecoswitch Advanced Load Management. Controlled Load Switch with Low R ON

NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

Dual N-Channel, Digital FET

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m

NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package

NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection

NUF6400MNTBG. 6-Channel EMI Filter with Integrated ESD Protection

Transcription:

NCP3 5 ma CMOS Low Dropout Regulator The NCP3 is 5 ma LDO that provides the engineer with a very stable, accurate voltage with low noise suitable for space constrained, noise sensitive applications. In order to optimize performance for battery operated portable applications, the NCP3 employs the dynamic quiescent current adjustment for very low I Q consumption at no load. Features Operating Input Voltage Range:.7 V to 5.5 V Available in Fixed Voltage Options:.9 V to 3.5 V Contact Factory for Other Voltage Options Very Low Quiescent Current of Typ. 5 A Standby Current Consumption: Typ.. A Low Dropout: 75 mv Typical at 5 ma ±% Accuracy at Room Temperature High Power Supply Ripple Rejection: 75 db at khz Thermal Shutdown and Current Limit Protections Stable with a F Ceramic Output Capacitor Available in udfn. x. mm Package These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applicaitons PDAs, Mobile phones, GPS, Smartphones Wireless Handsets, Wireless LAN, Bluetooth, Zigbee Portable Medical Equipment Other Battery Powered Applications UDFN4 MX SUFFIX CASE 57CU XX M MARKING DIAGRAM = Specific Device Code = Date Code PIN CONNECTION EN 3 4 2 GND (Bottom View) IN OUT XX M V IN IN OUT ORDERING INFORMATION See detailed ordering, marking and shipping information on page 4 of this data sheet. C IN OFF ON EN NCP3 GND C OUT F Ceramic Figure. Typical Application Schematic Semiconductor Components Industries, LLC, 26 December, 27 Rev. 3 Publication Order Number: NCP3/D

NCP3 IN EN ENABLE LOGIC THERMAL SHUTDOWN BANDGAP REFERENCE MOSFET DRIVER WITH CURRENT LIMIT AUTO LOW POWER MODE OUT EN ACTIVE DISCHARGE* GND *Active output discharge function is present only in NCP3AMXyyyTCG devices. yyy denotes the particular option. Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. Pin Name Description OUT Regulated output voltage pin. A small ceramic capacitor with minimum value of F is needed from this pin to ground to assure stability. 2 GND Power supply ground. 3 EN Driving EN over.9 V turns on the regulator. Driving EN below.4 V puts the regulator into shutdown mode. 4 IN Input pin. A small capacitor is needed from this pin to ground to assure stability. EPAD Exposed pad should be connected directly to the GND pin. Soldered to a large ground copper plane allows for effective heat removal. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage (Note ) V IN.3 V to 6 V V Output Voltage VOUT.3 V to VIN +.3 V or 6 V V Enable Input VEN.3 V to VIN +.3 V or 6 V V Output Short Circuit Duration tsc s Maximum Junction Temperature T J(MAX) 5 C Storage Temperature T STG 55 to 5 C ESD Capability, Human Body Model (Note 2) ESD HBM 2 V ESD Capability, Machine Model (Note 2) ESD MM 2 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22 A4, ESD Machine Model tested per EIA/JESD22 A5, Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS (Note 3) Rating Symbol Value Unit Thermal Characteristics, udfn4 x mm Thermal Resistance, Junction to Air R JA 7 C/W 3. Single component mounted on oz, FR 4 PCB with 645 mm 2 Cu area. 2

NCP3 ELECTRICAL CHARACTERISTICS 4 C T J 85 C; V IN = (NOM) + V for options greater than.5 V. Otherwise V IN = 2.5 V, whichever is greater; = ma, C IN =, unless otherwise noted. V EN =.9 V. Typical values are at T J = +25 C. Min./Max. are for T J = 4 C and T J = +85 C respectively. Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage V IN.7 5.5 V Output Voltage Accuracy 4 C T J 85 C 2. V 4 +4 mv > 2. V 2 +2 % Line Regulation VOUT +.5 V VIN 5.5 V (V IN.7 V) Reg LINE.. %/V Load Regulation IOUT = ma to 5 ma Reg LOAD 3 mv Load Transient Dropout Voltage (Note 4) = ma to 5 ma or 5 ma to ma in s, = 5 ma =.5 V Tran LOAD 3/ +2 8 235 =.85 V 2 65 75 25 = 3. V V DO 72 2 = 3. V 7 2 = 3.3 V 65 Output Current Limit = 9% (nom) I CL 5 55 ma Ground Current IOUT = ma I Q 5 95 A Shutdown Current VEN.4 V, VIN = 5.5 V I DIS. A EN Pin Threshold Voltage High Threshold Low Threshold V EN Voltage increasing V EN Voltage decreasing V EN_HI.9 V EN_LO EN Pin Input Current VEN = 5.5 V I EN.3. A.4 mv mv V Power Supply Rejection Ratio V IN = 3.6 V, = 3. V = 5 ma f = khz PSRR 75 db Output Noise Voltage V IN = 2.5 V, =.8 V, = 5 ma f = Hz to khz V N 6 V rms Thermal Shutdown Temperature Temperature increasing from TJ = +25 C T SD 6 C Thermal Shutdown Hysteresis Temperature falling from T SD T SDH 2 C Active Output Discharge Resistance VEN <.4 V, Version A only R DIS 4. Characterized when VOUT falls mv below the regulated voltage at VIN = VOUT(NOM) + V. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3

NCP3, OUTPUT VOLTAGE (V).26.24.22.2.98.96 = ma = 5 ma.94.92.9.88 V IN = 2.5 V =.2 V 4 3 2 2 3 4 5 6 7 8 9 Figure 3. Output Voltage vs. Temperature =.2 V, OUTPUT VOLTAGE (V) 2.85 2.8 2.85 2.8 2.795 2.79 = ma = 5 ma 2.785 2.78 2.775 2.77 4 3 2 2 3 4 5 6 7 8 9 Figure 4. Output Voltage vs. Temperature I Q, QUIESCENT CURRENT ( A) 8 7 6 5 4 3 2..5 25 C..5 2. 2.5 3. 3.5 4. 4.5 5. 5.5 V IN, INPUT VOLTAGE (V) 4 C 85 C Figure 5. Quiescent Current vs. Input Voltage I GND, GROUND CURRENT ( A) 6 55 5 45 4 35 3 25 2 5 5..., OUTPUT CURRENT (ma) 85 C 25 C 4 C Figure 6. Ground Current vs. Output Current I GND, GROUND CURRENT ( A) 6 54 48 42 36 3 24 = 5 ma 8 V 2 = ma IN = 3.8 V 6 4 3 2 2 3 4 5 6 7 8 9 Figure 7. Ground Current vs. Temperature REG LINE, LINE REGULATION (%/V)..8.6.4.2.2.4 V IN =.7 V to 5.5 V =.2 V.6 = ma.8 4 3 2 2 3 4 5 6 7 8 9 Figure 8. Line Regulation vs. Output Current =.2 V 4

NCP3 REG LINE, LINE REGULATION (%/V)..8.6.4.2.2.4.6.8. to 5.5 V = ma 4 3 2 2 3 4 5 6 7 8 9 Figure 9. Line Regulation vs. Temperature REG LOAD, LOAD REGULATION (mv) 9 8 7 6 5 4 V IN = 2.5 V 3 =.2 V 2 = ma to 5 ma 4 3 2 2 3 4 5 6 7 8 9 Figure. Load Regulation vs. Temperature =.2 V REG LOAD, LOAD REGULATION (mv) 9 8 7 6 5 4 3 2 = ma to 5 ma 4 3 2 2 3 4 5 6 7 8 9 Figure. Load Regulation vs. Temperature V DROP, DROPOUT VOLTAGE (mv) 9 8 7 6 5 4 3 2 T J = 85 C T J = 4 C T J = 25 C 5 3 45 6 75 9 5 2 35 5, OUTPUT CURRENT (ma) Figure 2. Dropout Voltage vs. Output Current V DROP, DROPOUT VOLTAGE (mv) 9 8 7 6 5 = 5 ma = ma 4 3 = ma 2 4 3 2 2 3 4 5 6 7 8 9 Figure 3. Dropout Voltage vs. Temperature I CL, CURRENT LIMIT (ma) 8 75 7 65 6 55 5 =.2 V 45 4 35 V IN = (nom) + V or 2.5 V = 9% (nom) 3 4 3 2 2 3 4 5 6 7 8 9 Figure 4. Current Limit vs. Temperature 5

NCP3 I SC, SHORT CIRCUIT CURRENT (ma) 8 75 7 65 6 55 5 =.2 V 45 4 V IN = (nom) + V or 2.5 V = V 35 3 4 3 2 2 3 4 5 6 7 8 9 Figure 5. Short Circuit Current vs. Temperature I SC, SHORT CIRCUIT CURRENT (ma) 8 75 7 65 6 55 5 45 4 = V 35 3 3. 3.2 3.4 3.6 3.8 4. 4.2 4.4 4.6 4.8 5. 5.2 5.4 5.6 V IN, INPUT VOLTAGE (V) Figure 6. Short Circuit Current vs. Input Voltage V EN, VOLTAGE ON ENABLE PIN (V).9.8.7.6.5.4 OFF > ON ON > OFF.3.2. 4 3 2 2 3 4 5 6 7 8 9 Figure 7. Enable Voltage Threshold vs. Temperature I EN, ENABLE CURRENT (na) 35 35 28 V EN = 5.5 V 245 2 V EN =.4 V 75 4 5 7 V IN = 5.5 V 35 4 3 2 2 3 4 5 6 7 8 9 Figure 8. Current to Enable Pin vs. Temperature I DIS, DISABLE CURRENT (na) 8 6 4 2 2 4 6 V IN = 5.5 V 8 4 3 2 2 3 4 5 6 7 8 9 Figure 9. Disable Current vs. Temperature 6

OUTPUT VOLTAGE NOISE ( V/rtHz). V IN = 2.5 V =.2 V. = ma FREQUENCY (khz) NCP3 = 5 ma = ma RMS Output Noise ( V) Hz khz Hz khz ma 6.93 59. ma 52.73 5.63 5 ma 5.2 48.96 Figure 2. Output Voltage Noise Spectral Density for =.2 V, OUTPUT VOLTAGE NOISE ( V/rtHz) = ma.. FREQUENCY (khz) = 5 ma = ma RMS Output Noise ( V) Hz khz Hz khz ma 79.23 74.66 ma 75.3 7.37 5 ma 77.28 72.66 Figure 2. Output Voltage Noise Spectral Density for, OUTPUT VOLTAGE NOISE ( V/rtHz) C OUT = 4.7 F = ma.. FREQUENCY (khz) = 5 ma = ma RMS Output Noise ( V) Hz khz Hz khz ma 8.7 75.29 ma 8.28 76.46 5 ma 8.3 76.77 Figure 22. Output Voltage Noise Spectral Density for, C OUT = 4.7 F 7

NCP3 RR, RIPPLE REJECTION (db) 9 8 7 6 5 4 3 2. C IN = none MLCC, X7R, 26 size FREQUENCY (khz) = ma = ma = 5 ma Figure 23. Power Supply Rejection Ratio, =.2 V, RR, RIPPLE REJECTION (db) 9 = ma = ma 8 = 5 ma 7 6 5 4 3 2 C IN = none MLCC, X7R, 26 size. FREQUENCY (khz) Figure 24. Power Supply Rejection Ratio,, C OUT = 4.7 F UNSTABLE OPERATION ESR ( ).. STABLE OPERATION 5 3 45 6 75 9 5 2 35 5, OUTPUT CURRENT (ma) V IN = 5.5 V MLCC, X7R, 26 size Figure 25. Output Capacitor ESR vs. Output Current 8

NCP3 5 mv/div V EN I INRUSH V EN = V = ma 2 ma/div 5 mv/div V EN I INRUSH V EN = V = 5 ma 2 ma/div V/div V/div 4 s/div Figure 26. Enable Turn on Response,, = ma 4 s/div Figure 27. Enable Turn on Response,, = 5 ma 5 mv/div V EN I INRUSH V EN = V = ma 2 ma/div 5 mv/div V EN I INRUSH V EN = V = 5 ma 2 ma/div V/div V/div 4 s/div Figure 28. Enable Turn on Response, C OUT = 4.7 F, = ma 4 s/div Figure 29. Enable Turn on Response, C OUT = 4.7 F, = 5 ma 5 mv/div V IN t RISE = s to 4.8 V = ma 5 mv/div V IN V IN = 4.8 V to 3.8 V = ma t FALL = s mv/div mv/div 2 s/div Figure 3. Line Transient Response Rising Edge,, = ma s/div Figure 3. Line Transient Response Falling Edge,, = ma 9

NCP3 5 mv/div V IN t RISE = s to 4.8 V C OUT = F = 5 ma 5 mv/div V IN t FALL = s V IN = 4.8 V to 3.8 V = 5 ma 2 mv/div 2 mv/div 4 s/div Figure 32. Line Transient Response Rising Edge,, = 5 ma 4 s/div Figure 33. Line Transient Response Falling Edge,, = 5 ma 5 ma/div V IN = 2.5 V =.2 V (MLCC) (MLCC) 5 ma/div t FALL = s V IN = 2.5 V =.2 V (MLCC) (MLCC) t RISE = s 2 mv/div C OUT = 4.7 F 2 mv/div 4 s/div Figure 34. Load Transient Response Rising Edge, =.2 V, = ma to 5 ma,, 4.7 F 2 s/div Figure 35. Load Transient Response Falling Edge, =.2 V, = ma to 5 ma,, 4.7 F 5 ma/div t RISE = s (MLCC) (MLCC) 5 ma/div t FALL = s (MLCC) (MLCC) C OUT = 4.7 F C OUT = 4.7 F 2 mv/div 2 mv/div 4 s/div Figure 36. Load Transient Response Rising Edge,, = ma to 5 ma,, 4.7 F s/div Figure 37. Load Transient Response Falling Edge,, = ma to 5 ma,, 4.7 F

NCP3 5 ma/div t RISE = s (MLCC) (MLCC) 5 ma/div t FALL = s (MLCC) (MLCC) 2 mv/div V IN = 5.5 V 2 mv/div V IN = 5.5 V 2 s/div Figure 38. Load Transient Response Rising Edge,, = ma to 5 ma,, 5.5 V s/div Figure 39. Load Transient Response Falling Edge,, = ma to 5 ma,, 5.5 V V IN V IN = 5.5 V = ma (MLCC) (MLCC) ma/div Overheating Full Load Thermal Shutdown V IN = 5.5 V =.2 V (MLCC) (MLCC) V/div 5 mv/div TSD Cycling 4 ms/div Figure 4. Turn on/off Slow Rising V IN ms/div Figure 4. Short Circuit and Thermal Shutdown

NCP3 APPLICATIONS INFORMATION General The NCP3 is a high performance 5 ma Low Dropout Linear Regulator. This device delivers very high PSRR (over 75 db at khz) and excellent dynamic performance as load/line transients. In connection with very low quiescent current this device is very suitable for various battery powered applications such as tablets, cellular phones, wireless and many others. The device is fully protected in case of output overload, output short circuit condition and overheating, assuring a very robust design. Input Capacitor Selection (C IN ) It is recommended to connect at least a F Ceramic X5R or X7R capacitor as close as possible to the IN pin of the device. This capacitor will provide a low impedance path for unwanted AC signals or noise modulated onto constant input voltage. There is no requirement for the min. /max. ESR of the input capacitor but it is recommended to use ceramic capacitors for their low ESR and ESL. A good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. Larger input capacitor may be necessary if fast and large load transients are encountered in the application. Output Decoupling (C OUT ) The NCP3 requires an output capacitor connected as close as possible to the output pin of the regulator. The recommended capacitor value is F and X7R or X5R dielectric due to its low capacitance variations over the specified temperature range. The NCP3 is designed to remain stable with minimum effective capacitance of.22 F to account for changes with temperature, DC bias and package size. Especially for small package size capacitors such as 42 the effective capacitance drops rapidly with the applied DC bias. There is no requirement for the minimum value of Equivalent Series Resistance (ESR) for the C OUT but the maximum value of ESR should be less than 3. Larger output capacitors and lower ESR could improve the load transient response or high frequency PSRR. It is not recommended to use tantalum capacitors on the output due to their large ESR. The equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. Enable Operation The NCP3 uses the EN pin to enable/disable its device and to deactivate/activate the active discharge function. If the EN pin voltage is <.4 V the device is guaranteed to be disabled. The pass transistor is turned off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage is pulled to GND through a resistor. In the disable state the device consumes as low as typ. na from the V IN. If the EN pin voltage >.9 V the device is guaranteed to be enabled. The NCP3 regulates the output voltage and the active discharge transistor is turned off. The EN pin has internal pull down current source with typ. value of 3 na which assures that the device is turned off when the EN pin is not connected. In the case where the EN function isn t required the EN should be tied directly to IN. Output Current Limit Output Current is internally limited within the IC to a typical 55 ma. The NCP3 will source this amount of current measured with a voltage drops on the 9% of the nominal. If the Output Voltage is directly shorted to ground ( = V), the short circuit protection will limit the output current to 58 ma (typ). The current limit and short circuit protection will work properly over whole temperature range and also input voltage range. There is no limitation for the short circuit duration. Thermal Shutdown When the die temperature exceeds the Thermal Shutdown threshold (T SD 6 C typical), Thermal Shutdown event is detected and the device is disabled. The IC will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (T SDU 4 C typical). Once the IC temperature falls below the 4 C the LDO is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. Power Dissipation As power dissipated in the NCP3 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCP3 can handle is given by: 25 C TA P D(MAX) (eq. ) JA The power dissipated by the NCP3 for given application conditions can be calculated from the following equations: P D V IN IGND @ IOUT VIN (eq. 2) 2

NCP3 26 JA, JUNCTION TO AMBIENT THERMAL RESISTANCE ( C/W) 24 22 2 8 6 4 2 P D(MAX), T A = 25 C, 2 oz Cu P D(MAX), T A = 25 C, oz Cu JA, oz Cu JA, 2 oz Cu.9.8.7.6.5 P D(MAX), MAXIMUM POWER DISSIPATION (W).4 2 3 4 5 6 7 COPPER HEAT SPREADER AREA (mm 2 ) Figure 42. JA vs. Copper Area (udfn4) Reverse Current The PMOS pass transistor has an inherent body diode which will be forward biased in the case that > V IN. Due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. Power Supply Rejection Ratio The NCP3 features very good Power Supply Rejection ratio. If desired the PSRR at higher frequencies in the range khz MHz can be tuned by the selection of C OUT capacitor and proper PCB layout. Turn On Time The turn on time is defined as the time period from EN assertion to the point in which will reach 98% of its nominal value. This time is dependent on various application conditions such as (NOM), C OUT and T A. For example typical value for =.2 V,, = ma and T A = 25 C is 9 s. PCB Layout Recommendations To obtain good transient performance and good regulation characteristics place C IN and C OUT capacitors close to the device pins and make the PCB traces wide. In order to minimize the solution size, use 42 capacitors. Larger copper area connected to the pins will also improve the device thermal resistance. The actual power dissipation can be calculated from the equation above (Equation 2). Expose pad should be tied the shortest path to the GND pin. 3

NCP3 ORDERING INFORMATION Device Voltage Option Marking Marking Rotation Option Package Shipping NCP3AMX9TCG.9 V AQ NCP3AMXTCG. V 5 8 NCP3AMX5TCG.5 V A NCP3AMXTCG. V E 8 NCP3AMX2TCG.2 V D NCP3AMX25TCG.25 V D 8 NCP3AMX3TCG.3 V AD NCP3AMX5TCG.5 V E NCP3AMX6TCG.6 V Y 8 NCP3AMX8TCG.8 V K 8 NCP3AMX85TCG.85 V F NCP3AMX2TCG 2. V P 8 NCP3AMX22TCG 2.2 V R 8 NCP3AMX24TCG 2.4 V AL NCP3AMX25TCG 2.5 V AX NCP3AMX26TCG 2.6 V V 8 NCP3AMX27TCG 2.7 V AK NCP3AMX28TCG 2.8 V J NCP3AMX285TCG 2.85 V K NCP3AMX3TCG 3. V L NCP3AMX3TCG 3. V P NCP3AMX32TCG 3.2 V AY NCP3AMX33TCG 3.3 V Q NCP3AMX345TCG 3.45 V AE NCP3AMX35TCG 3.5 V 3 8 NCP3AMX36TCG 3.6 V AV NCP3BMXTCG. V 5 27 NCP3BMX5TCG.5 V A 9 NCP3BMXTCG. V E 27 NCP3BMX2TCG.2 V D 9 NCP3BMX25TCG.25 V D 27 NCP3BMX3TCG.3 V CD NCP3BMX5TCG.5 V E 9 NCP3BMX6TCG.6 V Y 27 NCP3BMX8TCG.8 V K 27 NCP3BMX85TBG.85 V CJ NCP3BMX85TCG.85 V CJ NCP3BMX2TCG 2. V P 27 NCP3BMX22TCG 2.2 V R 27 NCP3BMX25TCG 2.5 V CH NCP3BMX26TCG 2.6 V V 27 NCP3BMX28TCG 2.8 V J 9 NCP3BMX285TCG 2.85 V K 9 NCP3BMX3TCG 3. V L 9 NCP3BMX3TCG 3. V P 9 NCP3BMX33TCG 3.3 V Q 9 NCP3BMX345TCG 3.45 V CE With active output discharge function Without active output discharge function udfn4 (Pb-Free) udfn4 (Pb-Free) 3 / Tape & Reel 3 / Tape & Reel NCP3BMX35TCG 3.5 V 3 27 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 4

NCP3 PACKAGE DIMENSIONS UDFN4.x.,.65P CASE 57CU ISSUE A PIN ONE REFERENCE 2X.5 C 2X.5 C NOTE 4. C.5 C DETAIL A D2 45 e D ÉÉ TOP VIEW SIDE VIEW BOTTOM VIEW A B E A (A3) A e/2 3X L 2 4 3 D2 L2 C SEATING PLANE 4X b. M C A B.5 M C C.27 x.25 NOTE 3 3X C.8 X 45 DETAIL A.65 PITCH DETAIL B PACKAGE OUTLINE NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, 994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN.3 AND.7 FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. MILLIMETERS DIM MIN MAX A.6 A..5 A3.5 REF b.2.3 D. BSC D2.38.58 E. BSC e.65 BSC L.2.3 L2.27.37 RECOMMENDED MOUNTING FOOTPRINT* 2X.58.3.53 4X.3 DIMENSIONS: MILLIMETERS 3X.43 3X. DETAIL B 4X.23 *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Bluetooth is a registered trademark of Bluetooth SIG. ZigBee is a registered trademark of ZigBee Alliance. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: 33 675 275 or 8 344 386 Toll Free USA/Canada Fax: 33 675 276 or 8 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 8 3 587 5 5 ON Semiconductor Website: Order Literature: http:///orderlit For additional information, please contact your local Sales Representative NCP3/D