NCP153. LDO Regulator, Dual, 130 ma, Low I Q

Transcription

1 NCP3 LDO Regulator, Dual, 3 ma, Low I Q The NCP3 is 3 ma, Dual Output Linear Voltage Regulator that provides a very stable and accurate voltage with very low noise and high Power Supply Rejection Ratio (PSRR) suitable for RF applications. In order to optimize performance for battery operated portable applications, the NCP3 employs the Adaptive Ground Current Feature for low ground current consumption during light load conditions. Device also incorporates foldback current protection to reduce short circuit current and protect powered devices. Features Operating Input Voltage Range:.9 V to.2 V Two Independent Output Voltages: (for details please refer to the Ordering Information section) Very Low Dropout: 3 mv Typical at 3 ma Low IQ of typ. A per Channel High PSRR: 7 db at khz Two Independent Enable Pins Over Current Protection: 6 ma Typical Foldback Short Circuit Protection Thermal Shutdown Stable with a.22 F Ceramic Output Capacitor Available in XDFN6.2 x.2 mm Package Active Output Discharge for Fast Output Turn Off These are Pb Free Devices Typical Applications Smartphones, Tablets, Wireless Handsets Wireless LAN, Bluetooth, ZigBee Interfaces Other Battery Powered Applications XDFN6,.2x.2 CASE 7AT OUT OUT2 GND PIN CONNECTIONS 2 3 GND XDFN6 (Top view) MARKING DIAGRAM GA M GA = Specific Device Code M = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. 6 4 EN IN EN2 V IN C IN.22 F IN EN EN2 NCP3 GND OUT2 OUT C OUT.22 F C OUT2.22 F Figure. Typical Application Schematic Semiconductor Components Industries, LLC, 2 July, 28 Rev. 2 Publication Order Number: NCP3/D

2 NCP3 EN ENABLE LOGIC THERMAL SHUTDOWN MOSFET DRIVER WITH CURRENT LIMIT OUT ACTIVE DISCHARGE EN GND EN2 IN BANDGAP REFERENCE ACTIVE DISCHARGE OUT2 MOSFET DRIVER WITH CURRENT LIMIT EN2 ENABLE LOGIC THERMAL SHUTDOWN Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. XDFN6 Pin Name Description OUT Regulated output voltage of the first channel. A small.22 F ceramic capacitor is needed from this pin to ground to assure stability. 2 OUT2 Regulated output voltage of the second channel. A small.22 F ceramic capacitor is needed from this pin to ground to assure stability. 3 GND Power supply ground. Soldered to the copper plane allows for effective heat dissipation. 4 EN2 Driving EN2 over.9 V turns on OUT2. Driving EN below.4 V turns off the OUT2 and activates the active discharge. IN Input pin common for both channels. It is recommended to connect.22 F ceramic capacitor close to the device pin. 6 EN Driving EN over.9 V turns on OUT. Driving EN below.4 V turns off the OUT and activates the active discharge. EP Exposed pad must be tied to ground. Soldered to the copper plane allows for effective thermal dissipation. 2

3 NCP3 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage (Note ) V IN.3 V to 6 V V Output Voltage,.3 V to VIN +.3 V or 6 V V Enable Inputs V EN, V EN2.3 V to 6 V V Output Short Circuit Duration t SC Indefinite s Maximum Junction Temperature T J(MAX) C Storage Temperature T STG to C ESD Capability, Human Body Model (Note 2) ESD HBM 2 V ESD Capability, Machine Model (Note 2) ESD MM 2 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22 A4 ESD Machine Model tested per EIA/JESD22 A Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS (Note 3) Rating Symbol Value Unit Thermal Characteristics, XDFN6.2 x.2 mm, Thermal Resistance, Junction to Air Thermal Characterization Parameter, Junction to Lead (Pin 2) 3. Single component mounted on oz, FR4 PCB with 64mm2 Cu area. JA 7 JL C/W 3

4 NCP3 ELECTRICAL CHARACTERISTIC 4 C T J 8 C; V IN = V OUT(NOM) + V or 2. V, whichever is greater; V EN =.9 V, I OUT = ma, C IN = C OUT =.22 F. Typical values are at T J = +2 C. Min/Max values are specified for T J = 4 C and T J = 8 C respectively. (Note 4) Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage V IN.9.2 V Output Voltage Accuracy V OUT > 2 V V OUT 2 +2 % 4 C T J 8 C V OUT 2 V 6 +6 mv Line Regulation V OUT +. V or 2. V V IN V Reg LINE.2. %/V Load Regulation I OUT = ma to 3 ma, T J = +2 C Reg LOAD mv Dropout Voltage (Note ) I OUT = 3 ma, T J = +2 C V OUT(nom) =.8 V V OUT(nom) = 3.3 V V DO 3 Output Current T J = +2 C I OUT 3 ma OCP Level V OUT = 9% V OUT(nom), T J = +2 C I OCP ma Short Circuit Current V OUT = V, T J = +2 C I SC ma Quiescent Current I OUT = ma, EN = V IN, EN2 = V or EN2 = V IN, EN = V mv I Q A I OUT = I OUT2 = ma, V EN = V EN2 = V IN I Q 8 2 A Shutdown Current (Note 6) V EN.4 V, V IN =.2 V I DIS. A EN Pin Threshold Voltage High Threshold Low Threshold V EN Voltage increasing V EN Voltage decreasing V EN_HI.9 V EN_LO.4 V EN Pin Input Current V EN = V IN =.2 V I EN.3. A Power Supply Rejection Ratio V IN = V OUT + V for V OUT > 2 V, V IN = 2. V, for V OUT 2 V, I OUT = ma f = khz PSRR 7 db Output Noise Voltage f = Hz to khz V N 7 V rms Active Discharge Resistance V IN = 4 V, V EN <.4 V R DIS Thermal Shutdown Temperature Temperature increasing from T J = +2 C T SD 6 C Thermal Shutdown Hysteresis Temperature falling from T SD T SDH 2 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T J = T A = 2 C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.. Characterized when V OUT falls mv below the regulated voltage at V IN = V OUT(NOM) + V. 6. Shutdown Current is the current flowing into the IN pin when the device is in the disable state. 4

5 NCP3 TYPICAL CHARACTERISTICS V OUT, OUTPUT VOLTAGE (V) I OUT = ma I OUT = 3 ma V IN = 2.8 V C IN =.22 F C OUT =.22 F Figure 3. Output Voltage vs. Temperature V OUT, OUTPUT VOLTAGE (V) I OUT = ma I OUT = 3 ma 2 Figure 4. Output Voltage vs. Temperature 3 C IN =.22 F C OUT =.22 F I GND, GROUND CURRENT ( A) V EN = V EN2 = V IN C IN =.22 F C OUT =.22 F. T J = 2 C T J = 8 C T J = 4 C. I GND, GROUND CURRENT ( A) C IN =.22 F C OUT =.22 F V EN = V EN2 = V IN, OUT LOAD OUT2 LOAD V EN = V EN2 = V IN, OUT LOAD V EN = V, V EN2 = V IN, OUT LOAD I OUT, OUTPUT CURRENT (ma) I OUT, OUTPUT CURRENT (ma) Figure. Ground Current vs. Output Current One Output Load Figure 6. Ground Current vs. Output Current Different Load Combinations I Q, QUIESCENT CURRENT ( A) C V IN, INPUT VOLTAGE (V) 8 C 4 C C IN =.22 F C OUT =.22 F Figure 7. Quiescent Current vs. Input Voltage Both Outputs ON REG LINE, LINE REGULATION (%/V) V IN = 2. V to.2 V I OUT = ma C IN =.22 F C OUT =.22 F Figure 8. Line Regulation vs. Temperature

6 NCP3 TYPICAL CHARACTERISTICS REG LINE, LINE REGULATION (%/V) Figure 9. Line Regulation vs. Temperature 3 to.2 V I OUT = ma C IN =.22 F C OUT =.22 F REG LOAD, LOAD REGULATION (mv) V IN = 2. V I OUT = ma to 3 ma C IN =.22 F C OUT =.22 F Figure. Load Regulation vs. Temperature REG LOAD, LOAD REGULATION (mv) I OUT = ma to 3 ma C IN =.22 F C OUT =.22 F V DROP, DROPOUT VOLTAGE (mv) V IN = 2.8 V C IN =.22 F C OUT =.22 F T J = 2 C T J = 8 C T J = 4 C I OUT, OUTPUT CURRENT (ma) Figure. Load Regulation vs. Temperature Figure 2. Dropout Voltage vs. Output Current V DROP, DROPOUT VOLTAGE (mv) C IN =.22 F C OUT =.22 F 3 26 T J = 2 C T J = 8 C T J = 4 C 7 3 V DROP, DROPOUT VOLTAGE (mv) V IN = 2.8 V C IN =.22 F C OUT =.22 F 2 I OUT = 3 ma I OUT = 7 ma I OUT = ma I OUT, OUTPUT CURRENT (ma) Figure 3. Dropout Voltage vs. Output Current Figure 4. Dropout Voltage vs. Temperature 6

7 NCP3 TYPICAL CHARACTERISTICS V DROP, DROPOUT VOLTAGE (mv) I SC, SHORT CIRCUIT CURRENT (ma) C IN =.22 F C OUT =.22 F 2 2 Figure. Dropout Voltage vs. Temperature I OUT = 3 ma I OUT = 7 ma I OUT = ma 6 Figure 7. Short Circuit Current vs. Temperature 8 V OUT = V C IN =.22 F C OUT =.22 F I CL, CURRENT LIMIT (ma) C IN =.22 F 3 C OUT =.22 F V OUT, OUTPUT VOLTAGE (V) Figure 6. Current Limit vs. Temperature 2 4 T J = 4 C T J = 2 C I OUT, OUTPUT CURRENT (ma) T J = 8 C C IN =.22 F C OUT =.22 F Figure 8. Current Foldback Protection 3.3 V V OUT, OUTPUT VOLTAGE (V) T J = 4 C T J = 2 C I OUT, OUTPUT CURRENT (ma) T J = 8 C V IN = 2.8 V C IN =.22 F C OUT =.22 F Figure 9. Current Foldback Protection.8 V I DIS, DISABLE CURRENT (na) V IN =. V C IN =.22 F C OUT =.22 F Figure 2. Disable Current vs. Temperature 7

8 NCP3 TYPICAL CHARACTERISTICS. V EN, ENABLE VOLTAGE (V) C IN =.22 F C OUT =.22 F 2 2 OFF > ON ON > OFF ESR ( ) Unstable Operation Stable Operation I OUT, OUTPUT CURRENT (ma) Figure 2. Enable Voltage Threshold vs. Temperature Figure 22. Stability vs. ESR I EN, CURRENT TO ENABLE PIN (na) C IN =.22 F C OUT =.22 F R DIS, DISCHARGE RESISTANCE ( ) C IN =.22 F C OUT =.22 F Figure 23. Current To Enable Pin vs. Temperature Figure 24. Discharge Resistance vs. Temperature 9 9 RR, RIPPLE REJECTION (db) V IN = 2.8 V C IN = none C OUT =.22 F ma ma ma RR, RIPPLE REJECTION (db) C IN = none C OUT =.22 F ma ma ma K K K M M K K K M M FREQUENCY (Hz) Figure 2. Power Supply Rejection Ratio,, C OUT =.22 F FREQUENCY (Hz) Figure 26. Power Supply Rejection Ratio,, C OUT =.22 F 8

9 NCP3 TYPICAL CHARACTERISTICS OUTPUT VOLTAGE NOISE (nv/ Hz) OUTPUT VOLTAGE NOISE (nv/ Hz) K K V IN = 2.8 V C IN =.22 F C OUT =.22 F MLCC, X7R, 26 size K K K K FREQUENCY (Hz) K Figure 27. Output Voltage Noise Spectral Density for, C OUT = 22 nf C IN =.22 F C OUT =.22 F MLCC, X7R, 26 size K K FREQUENCY (Hz) ma ma K ma Figure 28. Output Voltage Noise Spectral Density for, C OUT = 22 nf ma ma ma M M RMS Output Noise ( V) I OUT Hz khz Hz khz ma ma ma RMS Output Noise ( V) I OUT Hz khz Hz khz ma ma ma

10 NCP3 TYPICAL CHARACTERISTICS 2 mv/div mv/div ma/div 2 mv/div mv/div V/div V/div mv/div V EN I IN V IN = 3.8 V = 3.3 V = disable I OUT = ma C OUT = C OUT2 = F 4 s/div 4 s/div Figure 29. Enable Turn on Response VR = ma, VR2 = Off V IN Figure 3. Line Transient Response Rising Edge, V EN = V EN2 = V IN, = 3.3 V, I OUT = ma I OUT t RISE = s Figure 3. Enable Turn on Response VR = ma, VR2 = ma 2 s/div 2 s/div t RISE = s V IN = 3.8 V to 4.8 V I OUT2 = ma C OUT = 22 nf C OUT2 = 22 nf = 3.3 V =.8 V I OUT2 = ma C OUT = 22 nf C OUT2 = 22 nf Figure 33. Load Transient Response Rising Edge, I OUT = ma to 3 ma 3.3 V ma/div 2 mv/div Figure 32. Line Transient Response Falling Edge, V EN = V EN2 = V IN, = 3.3 V, I OUT = ma 4 s/div 4 s/div mv/div V/div V/div 2 mv/div mv/div ma/div 2 mv/div mv/div V EN I IN V IN I OUT t FALL = s t FALL = s = 3.3 V =.8 V I OUT = ma I OUT2 = ma C OUT = C OUT2 = F V IN = 4.8 V to 3.8 V I OUT2 = ma C OUT = 22 nf C OUT2 = 22 nf = 3.3 V =.8 V I OUT2 = ma C OUT = 22 nf C OUT2 = 22 nf Figure 34. Load Transient Response Falling Edge, I OUT = 3 ma to ma 3.3 V ma/div 2 mv/div

11 NCP3 TYPICAL CHARACTERISTICS ma/div I OUT2 t RISE = s ma/div I OUT2 t FALL = s = 3.3 V =.8 V I OUT = ma 2 mv/div mv/div = 3.3 V =.8 V I OUT = ma C OUT = 22 nf C OUT2 = 22 nf 2 mv/div mv/div C OUT = 22 nf C OUT2 = 22 nf 4 s/div 4 s/div Figure 3. Load Transient Response Rising Edge, I OUT = ma to 3 ma.8 V Figure 36. Load Transient Response Falling Edge, I OUT = 3 ma to ma.8 V ma/div 2 mv/div I OUT2 t RISE = s = 3.3 V =.8 V I OUT = ma ma/div 2 mv/div I OUT2 t FALL = s = 3.3 V =.8 V I OUT = ma C OUT = 22 nf C OUT2 = 22 nf mv/div C OUT = 22 nf C OUT2 = 22 nf mv/div 4 s/div 4 s/div Figure 37. Load Transient Response Rising Edge, I OUT =. ma to 3 ma Figure 38. Load Transient Response Falling Edge, I OUT = 3 ma to. ma V IN = 3.3 V =.8 V mv/div V EN t FALL = s mv/div I OUT = ma I OUT2 = ma C IN = C OUT = C OUT = 22 nf V/div C OUT = 4.7 F C OUT = F = 3.3 V =.8 V 2 ms/div 2 s/div Figure 39. Turn on/off Slow Rising V IN Figure 4. Enable Turn off

12 NCP3 APPLICATIONS INFORMATION General The NCP3 is a dual output high performance 3 ma Low Dropout Linear Regulator. This device delivers very high PSRR (7 db at khz) and excellent dynamic performance as load/line transients. In connection with low quiescent current this device is very suitable for various battery powered applications such as tablets, cellular phones, wireless and many others. Each output is fully protected in case of output overload, output short circuit condition and overheating, assuring a very robust design. The NCP3 device is housed in XDFN 6.2 mm x.2 mm package which is useful for space constrains application. Input Capacitor Selection (C IN ) It is recommended to connect at least a.22 F Ceramic XR or X7R capacitor as close as possible to the IN pin of the device. This capacitor will provide a low impedance path for unwanted AC signals or noise modulated onto constant input voltage. There is no requirement for the min. or max. ESR of the input capacitor but it is recommended to use ceramic capacitors for their low ESR and ESL. A good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. Larger input capacitor may be necessary if fast and large load transients are encountered in the application. Output Decoupling (C OUT ) The NCP3 requires an output capacitor for each output connected as close as possible to the output pin of the regulator. The recommended capacitor value is.22 F and X7R or XR dielectric due to its low capacitance variations over the specified temperature range. The NCP3 is designed to remain stable with minimum effective capacitance of. F to account for changes with temperature, DC bias and package size. Especially for small package size capacitors such as 2 the effective capacitance drops rapidly with the applied DC bias. There is no requirement for the minimum value of Equivalent Series Resistance (ESR) for the C OUT but the maximum value of ESR should be less than 2. Larger output capacitors and lower ESR could improve the load transient response or high frequency PSRR. It is not recommended to use tantalum capacitors on the output due to their large ESR. The equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. Enable Operation The NCP3 uses the dedicated EN pin for each output channel. This feature allows driving outputs separately. If the EN pin voltage is <.4 V the device is guaranteed to be disabled. The pass transistor is turned off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage V OUT is pulled to GND through a resistor. In the disable state the device consumes as low as typ. na from the V IN. If the EN pin voltage >.9 V the device is guaranteed to be enabled. The NCP3 regulates the output voltage and the active discharge transistor is turned off. The both EN pin has internal pull down current source with typ. value of 3 na which assures that the device is turned off when the EN pin is not connected. In the case where the EN function isn t required the EN should be tied directly to IN. Foldback Short Circuit Protection The internal foldback limits short circuit current to typical ma and protects powered device against overheating. Maximum output current is internaly limited to 6 ma (typ). The current limit and short circuit protection will work properly over whole temperature range and also input voltage range. There is no limitation for the short circuit duration. Thess protections are independent for each channel. Short circuit on the one channel do not influence second channel which will work according to specification. Thermal Shutdown When the die temperature exceeds the Thermal Shutdown threshold (T SD 6 C typical), Thermal Shutdown event is detected and the affected channel is turn off. Second channel still working. The channel which is overheated will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (T SDU 4 C typical). Once the device temperature falls below the 4 C the appropriate channel is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. The long duration of the short circuit condition to some output channel could cause turn off other output when heat sinking is not enough and temperature of the other output reach T SD temperature. Power Dissipation As power dissipated in the NCP3 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCP3 can handle is given by: 2 C TA P D(MAX) (eq. ) JA The power dissipated by the NCP3 for given application conditions can be calculated from the following equations: 2

13 NCP3 P D V IN I GND I OUT VIN I OUT2 VIN (eq. 2) 24.2 JA, JUNCTION TO AMBIENT THERMAL RESISTANCE ( C/W) P D(MAX), T A = 2 C, 2 oz Cu P D(MAX), T A = 2 C, oz Cu JA, oz Cu JA, 2 oz Cu..7. P D(MAX), MAXIMUM POWER DISSIPATION (W) COPPER HEAT SPREADER AREA (mm 2 ) Figure 4. JA vs. Copper Area (XDFN 6) Reverse Current The PMOS pass transistor has an inherent body diode which will be forward biased in the case that V OUT > V IN. Due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. Power Supply Rejection Ratio The NCP3 features very good Power Supply Rejection ratio. If desired the PSRR at higher frequencies in the range khz MHz can be tuned by the selection of C OUT capacitor and proper PCB layout. nominal value. This time is dependent on various application conditions such as V OUT(NOM), C OUT, T A. PCB Layout Recommendations To obtain good transient performance and good regulation characteristics place input and output capacitors close to the device pins and make the PCB traces wide. In order to minimize the solution size, use 42 capacitors. Larger copper area connected to the pins will also improve the device thermal resistance. The actual power dissipation can be calculated from the equation above (Equation 2). Expose pad should be tied the shortest path to the GND pin. Turn On Time The turn on time is defined as the time period from EN assertion to the point in which V OUT will reach 98% of its ORDERING INFORMATION Device Voltage Option* (OUT/OUT2) Marking Marking Rotation Package Shipping NCP3MX338TCG 3.3 V/.8 V GA XDFN-6 (Pb-Free) / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *Contact factory for other voltage options. Output voltage range. V to 3.3 V with step mv. 3

14 NCP3 PACKAGE DIMENSIONS XDFN6.2x.2,.4P CASE 7AT ISSUE C PIN ONE REFERENCE NOTE 4. C. C 6X L DETAIL A e ÍÍ ÍÍ 6 TOP VIEW SIDE VIEW D D2 3 4 BOTTOM VIEW A A B E A C 6X L E2 SEATING PLANE 6X b. M C A B NOTE 3 L DETAIL A OPTIONAL CONSTRUCTION NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.M, CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO THE PLATED TERMINALS. 4. COPLANARITY APPLIES TO THE PAD AS WELL AS THE TERMINALS. MILLIMETERS DIM MIN TYP MAX A A..3. b D..2.2 D E..2.2 E e.4 BSC L..2.2 L... RECOMMENDED MOUNTING FOOTPRINT* 6X.8.37 PACKAGE OUTLINE.4.4 PITCH.4 6X.24 DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ZigBee is a registered trademark of ZigBee Alliance. Bluetooth is a registered trademark of Bluetooth SIG. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 92 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NCP3/D