NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT- package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space and Component Count The SOT- package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/ unit reel. Replace T with T in the Device Number to order the inch/, unit reel. LMUNLT SERIES UNLT Series PIN BASE (INPUT) R R SOT (TO6AB) PIN COLLECTOR (OUTPUT) PIN EMITTER (GROUND) MAXIMUM RATINGS (TA = unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage V CBO 5 Vdc Collector-Emitter Voltage V CEO 5 Vdc Collector Current I C madc Total Power Dissipation @ T A = (Note.) Derate above DEVICE MARKING AND RESISTOR VALUES P D *46.5 mw C/W Device Marking R(K) R(K) LMUNLT A8A LMUNLT A8B LMUNLT A8C 47 47 LMUN4LT A8D 47 LMUN5LT A8E LMUN6LT A8F 4.7 LMUNLT A8G.. LMUNLT A8H.. LMUNLT A8J 4.7 4.7 LMUNLT A8K 4.7 47 LMUN4LT A8L 47 LMUN5LT A8M. 47 LMUN8LT A8R. LMUN4LT A8U. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish ORDERING INFORMATION Device Package Shipping LMUNLTG SOT /Tape & Reel LMUNLTG SOT /Tape & Reel LMUNLTG SOT /Tape & Reel LMUN4LTG SOT /Tape & Reel LMUN5LTG SOT /Tape & Reel LMUN6LTG SOT /Tape & Reel LMUNLTG SOT /Tape & Reel LMUNLTG SOT /Tape & Reel LMUNLTG SOT /Tape & Reel LMUNLTG SOT /Tape & Reel LMUN4LTG SOT /Tape & Reel LMUN5LTG SOT /Tape & Reel LMUN8LTG SOT /Tape & Reel LMUN4LTG SOT /Tape & Reel LMUNS-/
LMUNLT Series THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance Junction-to-Ambient (Note.) R θja 58 C/W Operating and Storage Temperature Range T J,T stg 55 to +5 C Maximum Temperature for Soldering Purposes, Time in Solder Bath T L 6 C Sec ELECTRICAL CHARACTERISTICS (TA = unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = 5 V, I E = ) I CBO nadc Collector-Emitter Cutoff Current (V CE = 5 V, I B = ) I CEO 5 nadc Emitter-Base Cutoff Current LMUNLT I EBO.5 madc (V EB = 6. V, I C = ) LMUNLT LMUNLT LMUN4LT LMUN5LT LMUN6LT LMUNLT LMUNLT LMUNLT LMUNLT LMUN4LT LMUN5LT LMUN8LT LMUN4LT..9.9 4...5.8. 4.. Collector-Base Breakdown Voltage (I C = µa, I E = ) V (BR)CBO 5 Vdc Collector-Emitter Breakdown Voltage (Note.), (I C =. ma, I B = ) V (BR)CEO 5 Vdc ON CHARACTERISTICS (Note.) DC Current Gain LMUNLT (V CE = V, I C = 5. ma) LMUNLT LMUNLT LMUN4LT LMUN5LT LMUN6LT LMUNLT LMUNLT LMUNLT LMUNLT LMUN4LT LMUN5LT LMUN8LT LMUN4LT Collector-Emitter Saturation Voltage (I C = ma, I B =. ma) (I C = ma, I B = 5 ma) LMUNLT/LMUNLT (I C = ma, I B = ma) LMUN5LT/LMUN6LT LMUNLT/LMUNLT/LMUN4LT/ LMUN5LT/LMUN8LT. Pulse Test: Pulse Width < µs, Duty Cycle <.%. h FE 5 6 8 8 6 6. 8. 5 8 8 8 6 6 6 4 4 5 5 5. 5 5 4 5 5 V CE(sat) 5 Vdc LMUNS/
LMUNLT Series ELECTRICAL CHARACTERISTICS (TA = unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note.) Output Voltage (on) (V CC = 5. V, V B =.5 V, R L =. k Ω) LMUNLT LMUNLT LMUN4LT LMUN5LT LMUN6LT LMUNLT LMUNLT LMUNLT LMUNLT LMUN4LT LMUN5LT LMUN8LT (V CC = 5. V, V B =.5 V, R L =. k Ω) LMUNLT (V CC = 5. V, V B = 5. V, R L =. k Ω) LMUN4LT V OL Vdc Output Voltage (off) (V CC = 5. V, V B =.5 V, R L =. k Ω) (V CC = 5. V, V B =.5 V, R L =. k Ω ) LMUNLT (V CC = 5. V, V B = 5 V, R L =. k Ω ) LMUN5LT LMUN6LT LMUNLT LMUN8LT V OH 4.9 Vdc Input Resistor LMUNLT LMUNLT LMUNLT LMUN4LT LMUN5LT LMUN6LT LMUNLT LMUNLT LMUNLT LMUNLT LMUN4LT LMUN5LT LMUN8LT LMUN4LT R 7. 5.4.9 7. 7...7.5.. 5.4.54.54 7 47 4.7.. 4.7 4.7.. 8.6 6. 6...9 6. 6. 8.6.86.88 kω Resistor Ratio LMUNLT/LMUNLT/LMUNLT LMUN4LT LMUN5LT/LMUN6LT/LMUN8LT LMUN4LT LMUNLT/LMUNLT/LMUNLT LMUNLT LMUN4LT LMUN5LT. Pulse Test: Pulse Width < µs, Duty Cycle <.%. R/R.8.7.8.55.8.8....47.47. 5..85.56.56 LMUNS/
LMUNLT LMUNLT Series PD, POWER DISSIPATION (MILLIWATTS) 5 5 5 RθJA= 6/W 5 5 5 TA, AMBIENT TEMPERATURE (5 C) Figure. Derating Curve VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. IC/IB =. 4 6 8 Figure. VCE(sat) vs. IC TA = hfe, DC CURRENT GAIN (NORMALIZED) VCE = V TA = 4 f = MHz le = A TA = 4 5 Figure. DC Current Gain Figure 4. Output Capcitance.. TA = VO = V TA =. 4 5 6 7 8 9 Figure 5. Output Current vs. Input Voltage. 4 5 Figure 6. Input Voltage vs. Output Current LMUNS4/
LMUNLT LMUNLT Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. IC/IB = TA =. 4 6 8 hfe, DC CURRENT GAIN (NORMALIZED) VCE = V TA = IC, COLLECTOR CURRENT (ma Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain 4 f = MHz le = A TA = 4 5... TA = VO = 5 V 4 6 8 Figure 9. Output Capacitance Figure. Output Current vs. Input Voltage VO = V TA = Figure. Input Voltage vs. Output Current LMUNS5/
LMUNLT LMUNLT Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS). IC/IB = TA =. 4 6 8 hfe, DC CURRENT GAIN (NORMALIZED) VCE = V TA = Figure. VCE(sat) vs. IC Figure. DC Current Gain.8.6.4 f = MHz le = A TA = 4 5.. TA = VO = 5 V. 4 6 8 Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage VO = V TA =. 4 5 Figure 6. Input Voltage vs. Output Current LMUNS6/
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. IC/IB = LMUN4LT TA =. 4 6 8 hfe, DC CURRENT GAIN (NORMALIZED) 5 5 5 LMUNLT Series TA = 4 6 8 5 4 5 6 7 8 9 Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain 4.5.5.5.5 f = MHz le = A TA = TA = VO = 5 V 4 6 8 5 5 5 4 45 5 Figure 9. Output Capacitance 4 6 8 Figure. Output Current vs. Input Voltage VO = V TA =. 4 5 Figure. Input Voltage vs. Output Current LMUNS7/
LMUNLT LMUNLT Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. IC/IB = TA =. 4 8 6 4 8 Figure. VCE(sat) vs. IC hfe, DC CURRENT GAIN VCE = V TA = 5 5 75 5 Figure. DC Current Gain 6 5 4 f = MHz IE = A TA =. TA = VO = 5 V 4 5 6. 4 6 8 Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage VO = V TA =. Figure 6. Output Voltage vs. Input Current LMUNS8/
LMUNLT LMUNLT Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS).. IC/IB = TA =. 7 7 7 Figure 7. VCE(sat) vs. IC hfe, DC CURRENT GAIN TA = VCE = V Figure 8. DC Current Gain 4.5.5.5.5 f = MHz IE = A TA = 4 5 6.. TA = VO = 5 V 4 6 8 Figure 9. Output Capacitance Figure. Output Current vs. Input Voltage VO = V TA =. 6 8 4 Figure. Input Voltage vs. Output Current LMUNS9/
TYPICAL APPLICATIONS FOR NPN BRTs LMUNLT Series µ Figure. Level Shifter: Connects or 4 Volt Circuits to Logic Figure. Open Collector Inverter: Inverts the Input Signal Figure 4. Inexpensive, Unregulated Current Source LMUNS/
LMUNLT Series SOT- V D A L G H B C S K J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A..97.8.4 B.47.55..4 C.5.44.89. D.5..7.5 G.7.87.78.4 H.5.4.. J.4.7.85.77 K.4.85.5.69 L.5.4.89. S.8.9..64 V.77.6.45.6.7.95.7.95.79..5.9..8 inches mm LMUNS/