6in IGBT Module MBB6TV6A Silicon N-channel IGBT Spec.No.IGBT-SP--R5 (P/8). FEATURES * High speed, low loss IGBT module. * Low thermal impedance due to direct liquid cooling. * High reliability, high durability module. 2. ABSOLUTE MAXIMUM RATINGS (Tc=25 o C ) Item Symbol Unit Specification Collector Emitter Voltage V CES V 65 Gate Emitter Voltage V GES V 2 DC I C 6 A ms I Cp 2 Forward Current DC I F 6 A ms I FM 2 Maximum Junction Temperature T jmax o C 75 Temperature under switching conditions T jop o C -4 ~ +5 Storage Temperature T stg o C -4 ~ +25 Isolation Voltage V ISO V RMS 2,5 (AC minute) Screw Torque Terminals (M6) - 6. () N m Mounting (M5) - 4. (2) Notes: Recommended Value ()5.5±.5N m (2)3.5±.5N m 3. ELECTRICAL CHARACTERISTICS Item Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES ma - -. Vce=65V, Vge=V, Tj=25 o C Gate Emitter Leakage Current I GES na - - ±5 Vge= 2V, Vce=V, Tj=25 o C Collector Emitter Saturation Voltage V CE(sat) V.3.65 2. Ic=6A, Vge=5V, Tj=25 o C -.9 - Ic=6A, Vge=5V, Tj=5 o C Gate Emitter Threshold Voltage V GE(TO) V 6. 6.7 7.5 Vce=5V, Ic=6mA, Tj=25 o C Input Capacitance C ies nf - 53 - Vce=V, Vge=V, f=khz, Tj=25 o C Rise Time t r -.5.4 Vcc=3V, Ic=6A Turn On Time t Switching Times on -.5.9 s Fall Time t f -.35.8 Turn Off Time t off -.2 2...45.8 If=6A, V GE=V, Tj=25 o C Peak Forward Voltage Drop V F V -.5 - If=6A, V GE=V, Tj=5 o C Reverse Recovery Time t rr s -.35.8 V CC=3V, Ic=6A, Turn On Loss E on(full) mj/p - 2 3 Turn Off Loss E off(full) mj/p - 45 65 Reverse Recovery Loss E rr(full) mj/p - 5 23 Thermistor Resistance R kω Leakage Current between Thermistor and Other Terminals Thermal Resistance - 5 - Tc=25 o C -.6 - Tc=5 o C ma - -. V=6Vp Ls=3nH, R(ext)=4.7Ω, Cge=56nF Vge=+5V/V, Tj=5 o C Inductive load Ls=3nH, Rg(ext)=4.7Ω, Cge=56nF Vge=+5V/V, Tj=5 o C Inductive load IGBT Rth(j-w) K /W - -.45 Junction to water/fin, l/min, 5%LLC FWD Rth(j-w) K /W - -.2 (per arm) * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision.
6in IGBT Module MBB6TV6A 4. PACKAGE OUTLINE DRAWING Spec.No.IGBT-SP--R5 (P2/8) Unit in mm Weight : 9g
6in IGBT Module MBB6TV6A 5. CIRCUIT DIAGRAM Spec.No.IGBT-SP--R5 (P3/8) Thermistor T, T2 and T3 are located on the same ceramic substrate with the IGBT and diode chips of phase U, V and W, respectively. Note: This temperature measurement is not suitable for the short circuit or short term overload detection and should be used only for the module protection against long term overload or malfunction of the cooling system. 6. PRODUCT LABEL 7. DEFINITION OF THE SYMBOLS
コレクタ電流 IC(A) コレクタ電流 IC(A) 6in IGBT Module MBB6TV6A Spec.No.IGBT-SP--R5 (P4/8) 8. STATIC CHARACTERISTICS 2 VGE=5V4V3V2V Tj=25 2 VGE=5V4V3V Tj=5 2V V 8 8 V 6 V 6 V 4 4 2 9V 2 9V 2 4 6 8 2 4 6 8 vs. vs. 2 Tj=25 2 Tj=5 8 8 6 6 4 4 Ic=2A 2 Ic=2A Ic=6A 2 Ic=6A 5 5 2 ゲート エミッタ間電圧 VGE(V) Gate to Emitter Voltage 5 5 2 ゲート エミッタ間電圧 VGE(V) Gate to Emitter Voltage vs. Gate to Emitter Voltage vs. Gate to Emitter Voltage
Gate to Emitter Voltage スイッチング時間 t (μs) Switching Time スイッチング時間 t(μs) Switting Time 順電流 IF(A) Forward Current 6in IGBT Module MBB6TV6A Spec.No.IGBT-SP--R5 (P5/8) 2 Vcc=3V Ic=6A Tj=25 2 VGE= Tj=25 Tj=5 ゲート エミッタ間電圧 VGE(V) 5 5 8 6 4 2 2 ゲート電荷 Gate Charge QG(nC) 2 3 4 5 順電圧 VF(V) Forward Voltage Gate Charge Characteristics Forward Voltage of Free-Wheeling Diode 9. DYNAMIC CHARACTERISTICS 2.5 2.5 toff VCC=3V VGE=+5V/V Rgon/RGoff=4.7Ω Cge=56nF Tj=5 Ls 3nH Inductive Load 2.5 2.5 VCC=3V VGE=+5V/V Cge=56nF IC=6A Tj=5 Ls 3nH Inductive Load toff ton tf tr.5 ton trr.5 trr tf tr 2 3 4 5 6 7 コレクタ電流 IC(A) 5 5 2 ゲート抵抗 RG(Ω) Gate Resistance Switching Time vs. Switching Time vs. Gate Resistance
コレクタ電流 IC(A) 過渡熱抵抗 Rth(j-w)(K/W) Transient Thermal Impeadance スイッチング損失 Eon,Eoff,Err(mJ/pulse) Switching Loss スイッチング損失 Eon,Eoff,Err(mJ/pulse) Switching Loss 6in IGBT Module MBB6TV6A Spec.No.IGBT-SP--R5 (P6/8) 6 5 4 VCC=3V VGE=+5/V RG=4.7Ω Cge=56nF Tj=5 Ls 3nH Inductive Load Eoff 2 8 VCC=3V VGE=+5/V IC=6A Cge=56nF Tj=5 Ls 3nH Inductive Load Eon 3 Voltage sense; CS* - E* (*:~6) 6 Voltage sense; CS* - E* (*:~6) Eon Eoff 2 4 Err 2 2 3 4 5 6 7 コレクタ電流 IC(A) Err 5 5 2 ゲート抵抗 RG(Ω) Gate Resistance Switching Loss vs. Switching Loss vs. Gate Resistance CS* - E* (*:~6) VGE=+5V/V Tj 5 l/min(llc5%) Diode. IGBT. 2 3 4 5 6 7 8.... 時間 t(s) Time Reverse Bias Safe Operation Area (RBSOA) Transient Thermal Impedance Characteristics
抵抗値 (kω) Resistance 逆回復電流 IR(A) Reverse Recovery Current 6in IGBT Module MBB6TV6A Spec.No.IGBT-SP--R5 (P7/8) 6 4 CS* - E* (*:~6) VGE=+5/V Tj 5 2 8 6 4 2 2 3 4 5 6 7 8 Reverse Recovery Safe Operation Area (RRSOA). THERMISTOR Table Specifications of Thermistor(For reference) Nominal zero-power resistance 5kΩ ±3%(25 ) B value 3375K±2%(25~5 ) Operating temperature range 5~5 Thermal time constant(in still air) Approx. sec. For reference(data from manufacturer) 2 8 6 4 2. 温度 ( ) Temperature Resistance vs. Temperature
6in IGBT Module MBB6TV6A Spec.No.IGBT-SP--R5 (P8/8) HITACHI POWER SEMICONDUCTORS Notices. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail-safe precautions or other arrangement. Or consult Hitachi s sales department staff. 4. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi Power Semiconductor Device, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written permission of Hitachi Power Semiconductor Device, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives that is located Inquiry portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi-power-semiconductor-device.co.jp/en/