20V Complementary MOSFET General Features N-Channel PRODUCT SUMMARY VDSS ID RDS(ON)(mΩ) Typ 20 @ VGS=4.5V 20V 4.5A 25 @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged SOT-23-6L package P-Channel PRODUCT SUMMARY VDSS ID RDS(ON)(mΩ) -20V -4.5A Application PWM applications Load switch Power management Typ 35 @ VGS=4.5V 45 @ VGS=2.5V SOT-23-6 D2 D1 G1 S2 G2 1 2 3 6 5 4 D1 S1 D2 G2 S2 G1 S1 Pin assignment SOT23-6L top view n-channel p-channel Schematic diagram ABSOLUTE MAXIMUM RATINGS(TA=25 unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current T A =25 C Symbol V DS V GS I D n-channel 20 ±12 5 p-channel -20 ±12-4.5 Pulsed Drain Current C I DM 16-15 T A =25 C 1.25 1.25 P D Power Dissipation B T A =70 C 1 1 Junction and Storage Temperature Range T J, T STG -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead Symbol Typ R θja 140 50 R θjl Max 74 58 Units V V A W C Units C/W C/W 1 www.siaisemi.com
N-Channel Electrical Characteristics(TA=25 unless otherwise noted) OFF CHARACTERISTICS Zero Gate Voltage Drain Current I V =20V,V =0V 1 μa DSS DS GS Gate-Body Leakage Current I V =±10V,V =0V ±100 na GSS GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) V DS=VGS,I D=250μA 0.5 0.7 1.5 V Drain-Source On-State Resistance R DS(ON) V GS=2.5V, ID=4A 30 40 mω V GS=4.5V, ID=4.5A 20 35 mω Forward Transconductance gfs V DS=10V,ID=4.5A 8 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 500 PF Output Capacitance C oss V DS=10V,VGS=0V, F=1.0MHz 250 PF Reverse Transfer Capacitance 90 PF SWITCHING CHARACTERISTICS (Note 4) C rss Turn-on Delay Time t 7 ns d(on) Turn-on Rise Time t r V DD=10V, R L = 2.8 Ω V GS =4.5V,R GEN=6Ω, 55 ns Turn-Off Delay Time t d(off) I D=3.6A, 16 ns Turn-Off Fall Time t f 10 ns Total Gate Charge Q 10 nc g Gate-Source Charge Q gs V DS=10V,ID=4.2A,V GS=4.5V 2.3 nc Gate-Drain Charge Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS V GS=0V I D=250μA 20 V DRAIN-SOURCE DIODE CHARACTERISTICS Q gd 2.9 nc Diode Forward Voltage (Note 3) V V =0V,I =1.3A 1.2 V SD GS S NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing. 2 www.siaisemi.com
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd t on t off Vgs Rgen Vin G D Rl Vout t d(on) V OUT t r t d(off) INVERTED t f S V IN 50% 50% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms PD Power(W) Figure 3 Power Dissipation Figure 4 Drain Current Rdson On-Resistance(mΩ) Figure 5 Output CHARACTERISTICS I D - Drain Current (A) Figure 6 Drain-Source On-Resistance 3 www.siaisemi.com
Normalized On-Resistance Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance Rdson On-Resistance(mΩ) C Capacitance (pf) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Qg Gate Charge (nc) Figure 11 Gate Charge Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward 4 www.siaisemi.com
Figure 13 Safe Operation Area r(t),normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance 5 www.siaisemi.com
P-Channel Electrical Characteristics(TA=25 unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS V GS=0V I D=-250μA -20 - - V Zero Gate Voltage Drain Current I DSS V DS=-20V,V GS=0V - - -1 μa Gate-Body Leakage Current I GSS V GS=±12V,V DS=0V - - ±100 na On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=V GS,I D=-250μA -0.45-0.7-1.0 V Drain-Source On-State Resistance R DS(ON) V GS=-4.5V, I D=-4.5A - 35 50 V GS=-2.5V, I D=-3A - 45 60 Forward Transconductance g FS V DS=-5V,I D=-3.5A - 8.5 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 740 - PF V DS=-4V,V GS=0V, Output Capacitance C oss - 290 - PF F=1.0MHz Reverse Transfer Capacitance - 190 - PF Switching Characteristics (Note 4) C rss Turn-on Delay Time t d(on) - 12 - ns Turn-on Rise Time t r V DD=-4V,I D=-3.3A, - 35 - ns Turn-Off Delay Time t d(off) R L=-1.2Ω,V GEN=-4.5V,R g=1ω - 30 - ns Turn-Off Fall Time t f mω - 10 - ns Total Gate Charge Q g - 7.8 - nc Gate-Source Charge Q gs V DS=-4V,I D=-4.1A,V GS=-4.5V - 1.2 - nc Gate-Drain Charge Drain-Source Diode Characteristics Q gd - 1.6 - nc Diode Forward Voltage (Note 3) V SD V GS=0V,I S=-1.6A - - -1.2 V Diode Forward Current (Note 2) I S - - 1.6 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%. 4. Guaranteed by design, not subject to production 6 www.siaisemi.com
Typical Electrical and Thermal Characteristics t on t off t d(on) t r t d(off) t f V OUT INVERTED V IN 50% 50% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms Figure 3 Power Dissipation Figure 4 Drain Current Rdson On-Resistance(Ω) PD Power(W) Figure 5 Output Characteristics I D - Drain Current (A) Figure 6 Drain-Source On-Resistance 7 www.siaisemi.com
Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Rdson On-Resistance(Ω) C Capacitance (pf) Normalized On-Resistance Qg Gate Charge (nc) Figure 11 Gate Charge Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward 8 www.siaisemi.com
Figure 13 Safe Operation Area r(t),normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance 9 www.siaisemi.com
SOT23-6L PACKAGE INFORMATION 10 www.siaisemi.com