IGBT ECONO3 Module, 5 A VS-GB5YG2NT ECONO3 4 pack FEATURES Gen 5 non punch through (NPT) technology μs short circuit capability Square RBSOA HEXFRED low Q rr, low switching energy Positive temperature coefficient Copper baseplate Operating frequencies 8 khz to 6 khz Low stray inductance design UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PRODUCT SUMMARY V CES I C(DC) at T C = 57 C V CE(on) typ. at 5 A Package Circuit 2 V 5 A 3.45 V ECONO3 4 pack 4 pack with thermistor BENEFITS Benchmark efficiency for SMPS appreciation in particular HF welding Rugged transient performance Low EMI, requires less snubbing Direct mounting to heatsink space saving PCB solderable terminals Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 2 V T C = 25 C 82 Continuous collector current I C T C = 8 C 24 Pulsed collector current I CM 37 Clamped inductive load current I LM 37 A T C = 25 C 3 Diode continuous forward current I F T C = 8 C 78 Diode maximum forward current I FSM 73 Gate to emitter voltage V GE ± 2 V T C = 25 C 892 Maximum power dissipation IGBT P D T C = 8 C 5 W MODULE Operating junction temperature range T J -55 to +5 Storage temperature range T Stg -4 to +25 C RMS isolation voltage V ISOL Any terminal to case, t = s 35 V Revision: 22-Apr-6 Document Number: 9363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB5YG2NT ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V (BR)CES V GE = V, I C = 5 μa 2 - - V GE = 5 V, I C = 5 A - 3.45 4. Collector to emitter voltage V CE(on) V GE = 5 V, I C = 2 A - 3.9 - V GE = 5 V, I C = 5 A, T J = 25 C - 3.87 - V V GE = 5 V, I C = 2 A, T J = 25 C - 4.42 - Gate threshold voltage V GE(th) V CE = V GE, I C =.5 ma 4. 4.9 6.5 Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma, (25 C to 25 C) - -2.3 - mv/ C V GE = V, V CE = 2 V - 2 2 μa Collector to emitter leaking current I CES V GE = V, V CE = 2 V, T J = 25 C -.57 - ma I F = A - 2.73 3.5 Diode forward voltage drop V FM I F = 5 A - 3.8 - I F = A, T J = 25 C - 2.8 - V I F = 5 A, T J = 25 C - 3.4 - Gate to emitter leakage current I GES V GE = ± 2 V - - ± 44 na SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g IC = 5 A - 26 - Gate to emitter charge (turn-on) Q ge V CC = 6 V - 3 - nc Gate to collector charge (turn-on) Q gc V GE = 5 V - 5 - Turn-on switching loss E on - 5.86 - I C = 5 A, V CC = 6 V, V GE = 5 V, Turn-off switching loss E off R g = 4.7, L = 5 μh, - 4.7 - Total switching loss E tot -.56 - Turn-on switching loss E on - 7.74 - mj off R g = 4.7, L = 5 μh, T J = 25 C Turn-off switching loss E V CC = 6 V, I C = 5 A, V GE = 5 V, - 7.2 - Total switching loss E tot - 4.94 - Turn-on delay time t d(on) - 474 - Rise time t r IC = 5 A, VCC = 6 V, VGE = 5 V, - 89 - Turn-off delay time t d(off) R g = 4.7, L = 5 μh, T J = 25 C - 52 - ns Fall time t f - - Reverse bias safe operating area Short circuit safe operating area Diode reverse recovery time Diode peak reverse current Diode recovery charge RBSOA SCSOA T J = 5 C, I C = 37 A, R g = 4.7, V GE = 5 V to, V CC = 6 V, V P = 2 V T J = 5 C, V CC = 9 V, V P = 2 V, R g =, V GE = 5 V to - - μs - 2 - t rr T J = 25 C - 345 - V R = 4 V, I F = 5 A - 3.8 - I rr T J = 25 C di/dt = 2 A/μs - 23.2 - - 448 - Q rr T J = 25 C - 399 - ns A nc Revision: 22-Apr-6 2 Document Number: 9363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB5YG2NT INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS Resistance R 25 T C = 25 C 5 R T C = C 493 ± 5 % B-value B 25/5 R 2 = R 25 exp. [B 25/5 (/T 2 - /(298.5 K))] 3375 ± 5 % K Maximum operating temperature 22 C Dissipation constant 2 mw/ C Thermal time constant 8 s THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS IGBT - Junction to case (per switch) R thjc - -.4 DIODE - Junction to case (per diode) R thjc - -.3 C/W Case to sink, flat, greased surface (per module) R thjs -.5 - Mounting torque (M5) 3. - 6. Nm Weight - 29 - g 3 27 24 2 8 5 T J = 25 C 2 9 6 3.5..5 2. 2.5 3. 3.5 4. 4.5 5. 5.5 6. V CE (V) Fig. - Typical IGBT Output Characteristics, V GE = 5 V Allowable Case Temperature ( C) 6 4 2 8 6 4 2 2 4 6 8 2 4 6 8 2 Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature DC I C - Continuous Collector Current (A) 3 27 24 2 8 5 2 9 6 3 V GE = 2 V V GE = 5 V V GE = 8 V.5..5 2. 2.5 3. 3.5 4. 4.5 5. 5.5 6. 6.5 V CE (V) V GE = 9 V Fig. 2 - Typical IGBT Output Characteristics, T J = 25 C V CE (V) 4.9 4.6 2 A 4.3 4. 5 A 3.7 3.4 A 3. 2.8 2.5 2 4 6 8 2 4 6 T J ( C) Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 22-Apr-6 3 Document Number: 9363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB5YG2NT www.vishay.com 3 27 24 2 V CE = 2 V T J = 5 C T J = 25 C 8 5 2 I CES (ma).. 9 T J = 25 C 6 3. 3 4 5 6 7 8 9. 2 4 6 8 2 V GE (V) V CES (V) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current 5.5 3 5.2 27 V GE(th) (V) 4.9 4.6 4.3 4. 3.7 I F (A) 24 2 8 5 2 T J = 25 C 3.4 T J = 25 C 9 3. 6 2.8 3 2.5.2.4.6.8..2.4.6.5..5 2. 2.5 3. 3.5 4. 4.5 5. 5.5 I C (ma) V FM (V) Fig. 6 - Typical IGBT Gate Threshold Voltage Fig. 9 - Typical Diode Forward Characteristics 6 Chip level Module level Allowable Case Temperature ( C) 4 2 8 6 4 2 DC 2 4 6 8 2 V CE (V) I F - Continuous Forward Current (A) Fig. 7 - IGBT Reverse BIAS SOA T J = 5 C, V GE = 5 V Fig. - Maximum Diode Continuous Forward Current vs. Case Temperature Revision: 22-Apr-6 4 Document Number: 9363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB5YG2NT 9 t d(off) Energy (mj) 8 7 6 5 4 3 2 Eon Eoff Switching Time (ns) t d(on) t r t f 4 6 8 2 4 6 8 2 22 5 5 2 25 3 35 4 45 5 R g (Ω) Fig. - Typical IGBT Energy Loss vs. I C T J = 25 C, V CC = 6 V, R g = 4.7, V GE = 5 V, L = 5 μh Fig. 4 - Typical IGBT Switching Time vs. R g T J = 25 C, V CC = 6 V, I C = 5 A, V GE = 5 V, L = 5 μh Switching Time (ns) t d(off) t d(on) t f t r 4 6 8 2 4 6 8 2 22 t rr (ns) 46 44 42 4 38 36 34 32 T J = 25 C 3 28 26 24 22 T 2 J = 25 C 8 6 4 2 2 3 4 5 di F /dt (A/μs) Fig. 2 - Typical IGBT Switching Time vs. I C T J = 25 C, V CC = 6 V, R g = 4.7, V GE = 5 V, L = 5 μh Fig. 5 - Typical Diode Reverse Recovery Time vs. di F /dt V rr = 4 V, I F = 5 A Energy (mj) 45 4 35 3 25 2 5 5 Eon Eoff 5 5 2 25 3 35 4 45 5 I rr (A) 4 37 34 3 T 28 J = 25 C 25 22 9 6 3 7 4 2 3 4 5 R g (Ω) di F /dt (A/μs) Fig. 3 - Typical IGBT Energy Loss vs. R g T J = 25 C, V CC = 6 V, I C = 5 A, V GE = 5 V, L = 5 μh Fig. 6 - Typical Diode Reverse Recovery Current vs. di F /dt V rr = 4 V, I F = 5 A Revision: 22-Apr-6 5 Document Number: 9363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB5YG2NT Q rr (nc) 47 44 4 T J = 25 C 38 35 32 29 26 23 2 7 4 8 5 2 2 3 4 5 di F /dt (A/μs) Fig. 7 - Typical Diode Reverse Recovery Charge vs. di F /dt, V rr = 4 V, I F = 5 A Z thjc - Thermal Impedance Junction to Case ( C/W)..5..2..5.2. DC.... t - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance Z thjc Characteristics (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W)..5.2..5.2. DC.... t - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Z thjc Characteristics (Diode) Revision: 22-Apr-6 6 Document Number: 9363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB5YG2NT ORDERING INFORMATION TABLE Device code VS- G B 5 Y G 2 N T 2 3 4 5 6 7 8 9 2 3 4 5 6 7 8 9 - product - Insulated gate bipolar transistor (IGBT) - B = IGBT Generation 5 NPT - Current rating (5 = 5 A) - Circuit configuration (Y = 4 pack) - Package indicator (G = ECONO3) - Voltage rating (2 = 2 V) - Speed / type (N = ultrafast with reduced diode, speed 8 khz to 6 khz) - NTC Thermistor CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 23 24 3 4 4 pack with thermistor Y 3 4 2 QB QB2 9 2 2 22 9 7 8 QB3 QB4 5 6 7 8 25 26 5 Ntc 6 2 Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95686 Revision: 22-Apr-6 7 Document Number: 9363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Outline Dimensions ECONO3 4 Pack DIMENSIONS in millimeters and inches 22 2 2 9 8 7 6 5 23 24 4 3 25 26 2 2 3 4 5 6 7 8 9 Revision: 2-Apr-6 Document Number: 95686 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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