IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 khz MOTOR DRIVE V CES 600 V I RMS per phase (3. kw total) with T C = 90 C A RMS T J 25 C Supply voltage 360 V DC Power factor 0.8 Modulation depth (see fig. ) 5 % V CE(on) (typical) at I C = 3 A, 25 C.8 V Speed 8 khz to 30 khz Package SIP Circuit configuration Three phase inverter FEATURES Short circuit rated ultrafast: optimized for high speed, and short circuit rated to 0 μs at 25 C, V GE = 5 V Fully isolated printed circuit board mount package Switching-loss rating includes all tail losses HEXFRED soft ultrafast diodes UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 DESCRIPTION The IGBT technology is the key to Vishay s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 600 V T C = 25 C 24 Continuous collector current I C T C = C 3 A Pulsed collector current I () CM 48 Clamped inductive load current I (2) LM 48 Short circuit withstand time t SC T C = C 9.3 μs Gate to emitter voltage V GE ± 20 V Isolation voltage V ISOL t = min, any terminal to case 2500 V RMS T C = 25 C 63 Maximum power dissipation, each IGBT P D T C = C 25 W Operating junction and storage temperature range T J, T Stg -55 to +50 Soldering temperature For 0 s, (0.063" (.6 mm) from case) 300 C Mounting torque 6-32 or M3 screw Notes () Repetitive rating; V GE = 20 V, pulse width limited by maximum junction temperature (see fig. 20) (2) V CC = 80 % (V CES ), V GE = 20 V, L = 0 μh, R G = 0 (see fig. 9) 5 to 7 (0.55 to 0.8) lbf in (N m) Revision: 25-Oct-7 Document Number: 94488 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90
THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TYP. MAX. UNITS Junction to case, each IGBT, one IGBT in conduction R thjc (IGBT) - 2.2 Junction to case, each diode, one diode in conduction R thjc (DIODE) - 3.7 C/W Case to sink, flat, greased surface R thcs (MODULE) 0.0 - Weight of module 20 - g 0.7 - oz. ELECTRICAL SPECIFICATIONS (T J = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V () (BR)CES V GE = 0 V, I C = 250 μa 600 - - V Temperature coeff. of breakdown voltage V (BR)CES T J V GE = 0 V, I C =.0 ma - 0.63 - V/ C I C = 3 A -.80 2.3 V Collector to emitter saturation voltage V GE = 5 V CE(on) I C = 24 A -.80 - See fig. 2, 5 V I C = 3 A, T J = 50 C -.56.73 Gate threshold voltage V GE(th) 3.0-6.0 V CE = V GE, I C = 250 μa Temperature coeff. of threshold voltage V GE(th) / T J - -3 - mv/ C Forward transconductance g (2) fe V CE = V, I C = 0 A 8 - S V GE = 0 V, V CE = 600 V - - 250 Zero gate voltage collector current I CES V GE = 0 V, V CE = 600 V, T J = 50 C - - 3500 μa I C = 5 A -.3.7 Diode forward voltage drop V FM See fig. 3 I C = 5 A, T J = 50 C -.2.6 V Gate to emitter leakage current I GES V GE = ± 20 V - - ± na Notes () Pulse width 80 μs, duty factor 0. % (2) Pulse width 5.0 μs; single shot Revision: 25-Oct-7 2 Document Number: 94488 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90
SWITCHING CHARACTERISTICS (T J = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g I C = 3 A - 0 70 Gate to emitter charge (turn-on) Q ge V CC = 400 V V GE = 5 V - 4 2 nc Gate to collector charge (turn-on) Q gc see fig. 8-49 74 Turn-on delay time t d(on) - 50 - Rise time t r TJ = 25 C - 30 - Turn-off delay time t d(off) I C = 3 A, V CC = 480 V - 0 70 ns Fall time t f energy losses include tail and diode V GE = 5 V, R G = 0-9 40 Turn-on switching loss E on reverse recovery - 0.56 - Turn-off switching loss E off see fig. 9, 0, 8-0.28 - mj Total switching loss E ts - 0.84. Short circuit withstand time t sc V CC = 360 V, T J = 25 C V GE = 5 V, R G = 0, V CPK < 500 V 0 - - μs Turn-on delay time t d(on) - 47 - T J = 50 C, see fig. 9, 0,, 8 Rise time t r I C = 3 A, V CC = 480 V - 30 - ns Turn-off delay time t d(off) V GE = 5 V, R G = 0-250 - Fall time t energy losses include tail and f - 50 - diode reverse recovery Total switching loss E ts -.28 - mj Internal emitter inductance L E Measured 5 mm from package - 7.5 - nh Input capacitance C ies V GE = 0 V - 600 - Output capacitance C oes V CC = 30 V ƒ =.0 MHz - 30 - pf Reverse transfer capacitance C res see fig. 7-55 - T J = 25 C - 42 60 Diode reverse recovery time t rr See fig. 4 T J = 25 C - 74 20 ns T J = 25 C - 4.0 6.0 Diode peak reverse recovery charge I rr See fig. 5 I F = 5 A A T J = 25 C - 6.5 0 V R = 200 V T J = 25 C Diode reverse recovery charge Q di/dt = 200 A/μs - 80 80 rr See fig. 6 nc T J = 25 C - 220 600 Diode peak rate of fall of recovery T J = 25 C - 88 - di during t (rec)m /dt See fig. 7 b T J = 25 C - 60 - A/μs Revision: 25-Oct-7 3 Document Number: 94488 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90
8 5.27 LOAD CURRENT (A) 6 4 2 0 8 6 4 Tc = 90 C Tj = 25 C Power Factor = 0.8 Modulation Depth =.5 Vcc = 50% of Rated Voltage 4.68 4.0 3.5 2.93 2.34.76.7 Total Output Power (kw) 2 0.59 0 0. 0 f, Frequency (khz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of Fundamental) 0.00 60 I C, Collector-to-Emitter Current (A) 0 T J = 50 C T J = 25 C V GE = 5V 20µs PULSE WIDTH 0 V CE, Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Maximum DC Collector Current (A) 40 20 80 60 DC 40 Square wave (D=0.50) 80% rated Vr applied 20 see note (2) 0 0 5 0 5 20 25 30 T C, Case Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature I C, Collector-to-Emitter Current (A) 0 T J = 50 C T J = 25 C V CC= 50V 5µs PULSE WIDTH 5 6 7 8 9 0 V GE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Output Characteristics V CE, Collector-to-Emitter Voltage(V) 4.0 3.0 2.0 V GE = 5V 80 us PULSE WIDTH I C= I C= 26A 3A I C= 6.5A.0-60 -40-20 0 20 40 60 80 20 40 60 T J, Junction Temperature ( C) Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature Revision: 25-Oct-7 4 Document Number: 94488 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90
0 Thermal Response (Z thjc ) 0. D = 0.50 0.20 0.0 0.05 0.02 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DMx Z thjc + T C 0.0 0.0000 0.000 0.00 0.0 0. 0 t, Rectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction to Case P DM t t 2 C, Capacitance (pf) 3000 2500 2000 500 0 VGE = 0V, f = MHz Cies = Cge + Cgc, C ce SHORTED Cres = Cgc Coes = Cce + Cgc C ies 500 C oes C res 0 0 V CE, Collector-to-Emitter Voltage (V) Total Switching Losses (mj).5.0 V CC = 480V V GE = 5V T = 25 J C I C = 3A 0.5 0 0 20 30 40 50 R G, Gate Resistance (Ω) Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance V GE, Gate-to-Emitter Voltage (V) 20 6 2 8 4 V CC = 400V I C = 3A Total Switching Losses (mj) 0 R G = 0Ω Ohm V GE = 5V V CC = 480V I C = I C = 26 A 3 A I C = 6.5 A 0 0 20 40 60 80 20 Q G, Total Gate Charge (nc) Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage 0. -60-40 -20 0 20 40 60 80 20 40 60 T J, Junction Temperature ( C ) Fig. 0 - Typical Switching Losses vs. Junction Temperature Revision: 25-Oct-7 5 Document Number: 94488 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90
Total Switching Losses (mj) 4.0 3.0 2.0.0 R G = Ohm 0Ω T J = 50 C V CC = 480V V GE = 5V I C, Collector-to-Emitter Current (A) 0 0 V GE = 20V T J = 25 C SAFE OPERATING AREA 0.0 0 5 0 5 20 25 30 I C, Collector-to-emitter Current (A) Fig. - Typical Switching Losses vs. Collector to Emitter Current 0 0 V CE, Collector-to-Emitter Voltage (V) Fig. 2 - Turn-Off SOA Instantaneous Forward Current - I F (A) 0 T J = 50 C T J = 25 C T J = 25 C 0.8.2.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Revision: 25-Oct-7 6 Document Number: 94488 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90
800 V R= 200V T J = 25 C T J = 25 C V R = 200V T J = 25 C T J = 25 C 80 600 I F = 30A t rr - (ns) 60 I F = 30A I F = 5A Q RR - (nc) 400 I F = 5A I F = 5.0A 40 I = 5.0A F 200 20 di f /dt - (A/µs) 0 Fig. 4 - Typical Reverse Recovery Time vs. di F /dt 0 di f /dt - (A/µs) Fig. 6 - Typical Stored Charge vs. di F /dt 0 V R = 200V T J = 25 C T J = 25 C 0 V R = 200V T J = 25 C T J = 25 C I IRRM - (A) 0 I F = 5A I = 30A F di(rec)m/dt - (A/µs) I F = 5.0A I F = 5A I = 30A F I F = 5.0A di f /dt - (A/µs) Fig. 5 - Typical Recovery Current vs. di F /dt 0 di f /dt - (A/µs) Fig. 7 - Typical di (rec)m /dt vs di F /dt 0 Revision: 25-Oct-7 7 Document Number: 94488 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90
GATE VOLTAGE D.U.T. Same type device as D.U.T. 0% +Vg Vce +Vg DUT VOLTAGE AND CURRENT 80 % of V CE 430 μf D.U.T. Vcc 0% Ic 90% Ic Ipk Ic td(on) tr 5% Vce Vce ie dt t2 Eon = t t t2 Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t r +Vge 90% Vge Ic trr trr Qrr id dt = tx Vce tx 0% Vcc 0% Irr Vcc 0% Vce Ic Ic 90% Ic Vpk Irr 5% Ic td(off) tf t+5µs Eoff = Vce ic dt t DIODE REVERSE RECOVERY ENERGY DIODE RECOVERY WAVEFORMS t4 Erec Vd id dt = t3 t t2 t3 t4 Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E rec, t rr, Q rr, I rr Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t0 t t2 Fig. 8e - Macro Waveforms for Figure 8a s Test Circuit Revision: 25-Oct-7 8 Document Number: 94488 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90
L 0 V V C D.U.T. 0 V to 480 V R L = 480 V 4 x I C at 25 C 50 V 6000 μf V Fig. 9 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit CIRCUIT CONFIGURATION 3 Q D 9 Q3 D3 5 Q5 D5 4 0 6 Q2 Q4 6 D2 2 D4 8 Q6 D6 7 3 9 Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95066 Revision: 25-Oct-7 9 Document Number: 94488 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90
Outline Dimensions IMS-2 (SIP) DIMENSIONS in millimeters (inches) Ø 3.9 (0.54) 2 x 62.43 (2.458) 53.85 (2.20) 7.87 (0.30) 5.46 (0.25) 2.97 (0.865) 2 3 4 5 6 7 8 9 0 2 3 4 5 6 7 8 9 0.38 (0.05) 3.94 (0.55) 4.06 ± 0.5 (0.60 ± 0.020) 5.08 (0.200) 6 x.27 (0.050) 3 x 2.54 (0.) 6 x 0.76 (0.030) 3 x IMS-2 Package Outline (3 Pins) 3.05 ± 0.38 (0.20 ± 0.05) 0.5 (0.020).27 (0.050) 6.0 (0.240) Notes () Tolerance uless otherwise specified ± 0.254 mm (0.00") (2) Controlling dimension: inch (3) Terminal numbers are shown for reference only Document Number: 95066 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 30-Jul-07
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