ESD5V0SxUS. ESD5V0S5US E rotated in reel. Type Package Configuration Marking SOT363 SOT363 SOT363 ESD5V0S4US ESD5V0S5US

Similar documents
ESD0P2RF-02LRH ESD0P2RF-02LS

Type Package Configuration L S (nh) Marking BB814 SOT23 common cathode 1.8 SH1/2*

BAT17... Silicon Schottky Diode For mixer applications in VHF/UHF range For high-speed switching application Pb-free (RoHS compliant) package

BAT68... Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package

BAS40.../BAS140W BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-02L BAS40-07 BAS40-07W

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking BAT15-02EL BAT15-02ELS

Type Marking Pin Configuration Package BCR112 BCR112W 1=B 1=B 2=E 2=E 3=C 3=C

BAS70.../BAS170W BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04W BAS70-04S BAS70-05W BAS70-06 BAS70-06W BAS70-07 BAS70-07W

BCR129 BCR129S BCR129W

Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23

BCR BCR183 BCR183W BCR183S BCR183U. Type Marking Pin Configuration Package BCR183 BCR183S BCR183U SOT23 SOT363 SC74 SOT323.

TVS (transient voltage suppressor) Bi-directional, 5.5 V, 0.1 pf, 0201, 0402, RoHS and halogen free compliant

BCR BCR108/F BCR108T/W BCR108S. Type Marking Pin Configuration Package BCR108 BCR108F 2=E 2=E SOT23 TSFP-3 BCR108S BCR108W 3=C 3=C - - 1=B 1=B

BAR64... BAR64-02LRH BAR64-02V BAR64-03W BAR64-06 BAR64-06W BAR64-05 BAR64-05W BAR64-04W

BCR Type Marking Pin Configuration Package BCR133 BCR133S BCR133W Pb-containing package may be available upon special request C 3

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

BCR BCR112/F BCR112W. Type Marking Pin Configuration Package BCR112 BCR112F BCR112W. WFs WFs WFs 3=C 3=C 3=C 2=E 2=E 2=E - - -

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

TVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC), 0.3 pf, 0201, RoHS and halogen free compliant

Type Marking Pin Configuration Package BFR193 RCs 1 = B 2 = E 3 = C SOT23

BF776. High Performance NPN Bipolar RF Transistor

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

BFP420. NPN Silicon RF Transistor

Type Marking Pin Configuration Package BCR405U L5s 1 = GND 2;3;5 = I out 4 = V S 6 = R ext SC74

Type Marking Pin Configuration Package BFP196 RIs 1 = C 2 = E 3 = B 4 = E - - SOT143

Type Marking Pin Configuration Package BFP540ESD AUs 1=B 2=E 3=C 4=E - - SOT343

IDW100E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev

IDW75E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Type Marking Pin Configuration Package BFP520 APs 1=B 2=E 3=C 4=E - - SOT343

Type Marking Pin Configuration Package BFP540 ATs 1=B 2=E 3=C 4=E - - SOT343

BFP620. Low Noise SiGe:C Bipolar RF Transistor

Type Marking Pin Configuration Package BFP520F APs 1=B 2=E 3=C 4=E - - TSFP-4

WE05MF. 2 SOT-553 (Top View) Features IEC COMPATIBILITY (EN ) Tel: Transient Voltage Suppressor SOT-553

Smart High-Side Power Switch BTS4140N

PROFET ITS716G Ω Ω. Green Product (RoHS compliant) Data Sheet 1 Rev. 1.1,

EAYW ESD5425E ESD5425E. Descriptions. Features. Order information. Applications. http//:

BFG235. NPN Silicon RF Transistor*

6V8 * ESDA6V8UD ESDA6V8UD. Descriptions. Features. Order information. Applications. http//:

Type Marking Pin Configuration Package BCR139F BCR139L3 BCR139T 2=E 2=E 2=E 1=B 1=B 1=B 3=C 3=C 3=C

Type Marking Pin Configuration Package BFR380F FCs 1 = B 2 = E 3 = C TSFP-3

5V 4 * 1 5 ESD5344D ESD5344D. Descriptions. Features. Order information. Applications. http//:

BCR401U. LED Driver Features LED drive current of 10mA Output current adjustable up to 65mA with external resistor 4 5. Supply voltage up to 40V

Type Marking Pin Configuration Package BCR400W W4s 1=GND/E NPN 2=Contr/B NPN 3V S 4=Rext/C NPN SOT343

BFP405. NPN Silicon RF Transistor

BFP420. NPN Silicon RF Transistor

3 * ESD5302N ESD5302N. Descriptions. Features. Applications. Order information. http//:

BFP520. NPN Silicon RF Transistor

ESD9N12BA ESD9N12BA. Descriptions. Features. Applications. Order information. http//:

WS2.8LVU. Features IEC COMPATIBILITY (EN ) Transient Voltage Suppressor. SOT23-3L (Top View) Document: W , Rev: C

LCDA15-1. Low Capacitance TVS Diode Array PRELIMINARY Features. PROTECTION PRODUCTS Description. Mechanical Characteristics.

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

PESDHC5D7VU ESD Protector

1 Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode

PESDxV4UG series. 1. Product profile. Very low capacitance quadruple ESD protection diode arrays in SOT353 package. 1.1 General description

PESDSC2FD5VB ESD Protector

PESDAWC236T5VU Low Capacitance TVS Array

PESDxS1UL series. 1. Product profile. ESD protection diodes in a SOD882 package. 1.1 General description. 1.2 Features. 1.

UESD6V8S2B. Dual Line ESD Protection Diode Array UESD6V8S2B SOT523. General Description. M: Monthly Code UESD6V8S2B SOT523

ESD5641DXX series. ESD5641DXX series. Descriptions. Features. Applications. Order information. http//:

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

OptiMOS 2 Power-Transistor

SR70 RailClamp Low Capacitance TVS Diode Array

Bidirectional Symmetrical (BiSy) Low Capacitance, Dual-Line ESD-Protection Diode in SOT-323

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Bidirectional Symmetrical (BiSy) Low Capacitance, Dual-Line ESD Protection Diode in SOT-23

BCR401R LED Driver Features Applications General Description

SP A Discrete Unidirectional TVS Diode

SM24CANA Series 200W TVS Diode Array

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current -44 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 110

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

ESDCANxx-2BLY. Automotive dual-line TVS in SOT23-3L for CAN bus. Datasheet. Features. Applications. Description

Data Sheet, Rev. 2.1, Sept BGA612. Silicon Germanium Broadband MMIC Amplifier. RF & Protection Devices

ESDARF02-1BU2CK. Single-line bidirectional ESD protection for high speed interface. Features. Applications. Description

CAN bus ESD protection diode

ESD5311X ESD5311X 1-Line, Bi-directional, Ultra-low Capacitance http//: Transient Voltage Suppressors Descriptions

SM712 Series 600W Asymmetrical TVS Diode Array

IHW15T120. Soft Switching Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

ESD051-1F4. Low clamping single line unidirectional ESD. Datasheet. Features. Application. Description

Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES

Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESDLC23T5VU Low Capacitance ESD Protector

TLE4916-1K. Datasheet. Sense & Control. Low Power Automotive Hall Switch. Rev.1.0,

PESD5V0F1BSF. 1. Product profile. 2. Pinning information. Extremely low capacitance bidirectional ESD protection diode. 1.1 General description

AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.9 R JA Junction-to-Ambient ( PCB Mount) 50 C/W

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

For broadband amplifiers up to 1 GHz at collector currents from 1 ma to 20 ma For mixers and oscillators in sub-ghz applications

IKW40T120. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Qualified for industrial apllications according to the relevant tests of JEDEC47/20/22. Pin 1

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Transcription:

ESDV0SxUS MultiChannel TVS Diode Array ESD / transient protection of data and power lines in. V / V application according to: IEC00 (ESD): ± 0 KV (contact) IEC00 (EFT): 80 A (/0 ns) IEC00 (Surge): A (8/0 µs) Working voltage: V (. V max.) Low clamping voltage Low reverse current < µa Pbfree (RoHS compliant) package Applications Uni or bidirectional operation possible (see application example page ) Mobile communication Consumer products (STB, MP, DVD, DSC...) LCD displays, camera Notebooks and desktop computers, peripherals ESDV0SUS ESDV0SUS ESDV0SUS E77 80 rotated in reel Type Package Configuration Marking ESDV0SUS ESDV0SUS ESDVSUS E77* * Preliminary data SOT SOT SOT lines, unidirectional lines, unidirectional lines, unidirectional Es Es on request 007

ESDV0SxUS Maximum Ratings at T A = C, unless otherwise specified Parameter Symbol Value Unit ESD contact discharge per diode ) V ESD 0 kv Peak pulse current (t p = 8 / 0 µs) per diode ) I pp A Peak pulse power (t p = 8 / 0 µs) per diode P pk 0 W Operating temperature range T op... C Storage temperature T stg... Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Characteristics Reverse working voltage V RWM. V Breakdown voltage I (BR) = ma V (BR).7.7 7.7 Reverse current V R =. V V R = V Clamping voltage (positive transients) I PP = A, t p = 8/0 µs ) I PP = A, t p = 8/0 µs ) I R V CL µa V 7 9. Forward clamping voltage (negative transients) V FC I PP = A, t p = 8/0 µs ) I PP = A, t p = 8/0 µs ). Diode capacitance C T pf V R = 0 V, f = MHz 70 90 V R = V, f = MHz V ESD according to IEC00 I pp according to IEC00 007

ESDV0SxUS Power derating curve P pk = ƒ (T A ) Clamping voltage, V cl = ƒ(i pp ) t p = 8 / 0 µs (positive transients) % V Ppk or Ipp 90 80 70 Vcl 9 8 0 7 0 0 0 0 0 0 0 7 0 C 0 0 7 8 A T A I pp Forward clamping voltage V FC = ƒ (I pp ) t p = 8 / 0 µs (negative transients) Reverse current I R = ƒ(v R ) T A = Parameter V A 7 VFC 9 8 IR 8 TA = C 8 C C 7 9 0 0 7 8 A I pp 0 V V R 007

ESDV0SxUS Normalized reverse voltage V BR (T A )/V BR ( C)= ƒ(t A ) I R = ma.0 Diode capacitance C T = ƒ (V R ) f = MHz 90 VBR(Ta)/VBR( C).0.0.0.0 CT pf 70 0 0 0.99 0.98 0 0.97 0.9 0 0.9 0 0 0 7 0 C 0 0 V T A V R 007

ESDV0SxUS Application example ESDV0SUS channels, unidirectional Connector protected signal lines, level 0... +.V ESD sensitive device The protection diode should be placed very close to the location where the ESD or other transients can occur to keep loops and inductances as small as possible. Pin should be connected directly to a ground plane on the board. Application example ESDV0SUS channels, bidirectional Connector protected signal lines, level.v... +.V ESD sensitive device For bidirectional protection pin (or any other pin except pin ) should be connected directly to a ground plane on the board. Pin is not connected. Total clamping voltage is the sum of V CL + V FC (see table on page ). Application example ESDV0SUS channels, unidirectional Connector protected signal lines, level 0 +.V ESD sensitive device Pin and pin should be connected directly to a ground plane on the board. 007

Package SOT ESDV0SxUS Package Outline ±0. +0. 0. 0.0 x 0. M 0. MAX. 0. 0.9 ±0. A Pin marking 0. 0..±0. 0. MIN. +0. 0. 0.0 Foot Print 0. 0.9. 0.7 0. 0. Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 00, June Date code (Year/Month) Pin marking Laser marking BCR8S Type code Standard Packing Reel ø80 mm =.000 Pieces/Reel Reel ø0 mm =.000 Pieces/Reel For symmetric types no defined Pin orientation in reel. 0.. 8. ±0. 0. M A Pin marking.. 007

ESDV0SxUS Edition 009 Published by Infineon Technologies AG 87 Munich, Germany 009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 007