BFR 93 / BFR 93 R. Silicon NPN Planar RF Transistor. Applications. Features. Absolute Maximum Ratings. Maximum Thermal Resistance

Similar documents
Silicon NPN Planar RF Transistor

RF-amplifier up to GHz range specially for wide band antenna amplifier.

BFR91. Silicon NPN Planar RF Transistor. Vishay Semiconductors

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu

BFR93A/BFR93AR/BFR93AW. Silicon NPN Planar RF Transistor. Vishay Semiconductors. Applications. Features. Absolute Maximum Ratings

Part Ordering code Marking Remarks Package BFR91A BFR91AGELB-GS08 BFR91A Packed in Bulk TO-50(3)

Silicon NPN Planar RF Transistor

Part Ordering code Marking Remarks Package BFR90A BFR90AGELB-GS08 BFR90A Packed in Bulk TO-50(3)

Silicon NPN Planar RF Transistor

BPW85. Silicon NPN Phototransistor. Description. Features. Applications. Absolute Maximum Ratings

BFQ67 / BFQ67R / BFQ67W

Part Ordering code Marking Remarks MMBT2222A MMBT2222A-GS18 or MMBT2222A-GS08 1P Tape and Reel

Part Type differentiation Ordering code Remarks 2N3904 2N3904-BULK or 2N3904-TAP Bulk / Ammopack

TV Vertical Deflection Output Amplifier

BPV11F. Silicon NPN Phototransistor VISHAY. Vishay Semiconductors

Voltage stabilization

CNY70. Reflective Optosensor with Transistor Output. Description. Applications. Features. Pin Connection

(U813BS-SP, U813BSE-SP)

BPW17N. Silicon NPN Phototransistor. Vishay Semiconductors. Description. Features. Applications Detector in electronic control and drive circuits

GaAs Infrared Emitting Diode in Miniature (T ) Package

Parameter Test Conditions Symbol Value Unit Junction ambient l=4mm, T L =constant R thja 110 K/W

TDA 1072 A. AM Receiver Circuit. Preliminary Information. Technology: Bipolar Features. TELEFUNKEN Semiconductors. Controlled RF preamplifier

BPV11. Silicon NPN Phototransistor. Vishay Semiconductors

BP104. Silicon PIN Photodiode. Vishay Semiconductors

Reflective Optical Sensor with Transistor Output


TEPT5600. Ambient Light Sensor. Vishay Semiconductors

TDA4439. Video IF Amplifier for Multistandard TV and VTR. Technology: Bipolar. Features. Case: DIP18. TELEFUNKEN Semiconductors

BPW41N. Silicon PIN Photodiode. Vishay Semiconductors

BPW17N. Silicon NPN Phototransistor. Vishay Semiconductors

Extended Type Number Package Remarks U2535B-FP. Supply voltage for PIN diode Integrator C 3 C 2. Figure 1. Block diagram

Reflective Optical Sensor with Transistor Output

TEFT4300. Silicon NPN Phototransistor. Vishay Semiconductors

TEA1007. Simple Phase Control Circuit. Description. Features. Block Diagram

Diode capacitance V R = 0 V, f = 1 MHz, E = 0 C D 1.2 nf V R = 5 V, f = 1 MHz, E = 0 C D 400 pf Dark Resistance V R = 10 mv R D 38 GΩ Optical

S186P. Silicon PIN Photodiode. Vishay Semiconductors

CNY17 Series. Optocoupler with Phototransistor Output. Description. Applications. TELEFUNKEN Semiconductors

BPW41N. Silicon PIN Photodiode. Vishay Semiconductors

CNY17 Series. Optocoupler with Phototransistor Output. Description. Applications. Order Nos. and Classification table is on sheet 2.

Part Ordering code Marking Remarks BAW56-V BAW56-V-GS18 or BAW56-V-GS08 JD Tape and Reel

Part Ordering code Marking Remarks BAV99-V BAV99-V-GS18 or BAV99-V-GS08 JE Tape and Reel

TEKS5400. Silicon Photodetector with Logic Output VISHAY. Vishay Semiconductors

GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T 1) Package

Type Ordering Code Remarks

CNY75(G) Series. Optocoupler with Phototransistor Output. Description. Applications. Order Nos. and Classification table is on sheet 2.

Part Ordering code Type Marking Remarks BAT41 BAT41-TR or BAT41-TAP BAT41 Tape and Reel/Ammopack

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Part Ordering code Marking Remarks BAV99-V BAV99-V-GS18 or BAV99-V-GS08 JE Tape and Reel

Part Ordering code Type Marking Remarks BAT41 BAT41-TR or BAT41-TAP BAT41 Tape and Reel/Ammopack

Part Ordering code Type Marking Remarks BAS85 BAS85-GS18 or BAS85-GS08 - Tape and Reel

BPW46L. Silicon PIN Photodiode. Vishay Semiconductors

Transmissive Optical Sensor with Phototransistor Output

Optocoupler, Phototransistor Output, with Base Connection

BPV10NF. High Speed Silicon PIN Photodiode. Vishay Semiconductors

TCLT10.. Series. Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat Package VISHAY. Vishay Semiconductors

BPV23NF(L) Silicon PIN Photodiode. Vishay Semiconductors

Optocoupler, Phototransistor Output, no Base Connection

TLMC310. Low Current SMD LED VISHAY. Vishay Semiconductors

1N5221B to 1N5267B. Small Signal Zener Diodes. Vishay Semiconductors

TDSG / O / Y11.. Standard 7- Segment Display 7 mm VISHAY. Vishay Semiconductors

UAA145. Phase Control Circuit for Industrial Applications. Description. Features. Applications. Block Diagram

SD103AW-V/103BW-V/103CW-V

BAS81 / 82 / 83. Small Signal Schottky Diodes. Vishay Semiconductors. Features Integrated protection ring against static discharge

Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Part Symbol Value Unit

TCMT11.. Series/ TCMT4100

Part Ordering code Remarks TSMS3700-GS08 TSMS3700-GS08 MOQ: 7500 pcs TSMS3700-GS18 TSMS3700-GS18 MOQ: 8000 pcs

Chip temperature monitoring. Oscillator 140 C. Output stage logic. Time window current measurement Q S Q R S 2. Figure 1.

TDSG / O / Y31.. Standard 7- Segment Display 10 mm VISHAY. Vishay Semiconductors

BAS19-V / 20-V / 21-V

Low Cost Current Feedback Phase Control Circuit. 22 k/2w BYT51K. R 1 D1 R 8 max. R k. Voltage. detector. Phase control unit = f (V 3 ) C 3 C 4

TDS.31.. Standard 7 Segment Display 10 mm. Vishay Semiconductors. Description. Features. Applications

Parameter Test condition Symbol Value Unit Power dissipation T L 25 C P tot 500 mw Z-current I Z P tot /V Z ma

BPV22NF(L) Silicon PIN Photodiode. Vishay Semiconductors

Optocoupler, Photodarlington Output, AC Input, Internal R BE

MCL103A / 103B / 103C

ZMY3V9 to ZMY100. Zener Diodes. Vishay Semiconductors

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Optocoupler, Phototransistor Output, Low Input Current

Zero-Voltage Switch with Adjustable Ramp. R 2 (R sync ) 220 k (250 V~) Synchronization. Full-wave logic T2117

Parameter Test condition Symbol Value Unit Junction ambient l = 4 mm, T L = constant R thja 300 K/W

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS


Photo Modules for PCM Remote Control Systems

MMSZ4681-V to MMSZ4717-V

Optocoupler, Phototransistor Output, AC Input


MMBZ4681-V to MMBZ4717-V

Linear Optocoupler, PCMCIA Package

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

Optocoupler, Photodarlington Output, High Gain, With Base Connection

SD103A/103B/103C. Small Signal Schottky Diodes. Vishay Semiconductors

Ambient Light Sensor, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released

Low Current 10 mm 7-Segment Display

Part Ordering code Type Marking Remarks BAT85S BAT85S-TR or BAT85S-TAP BAT85S Tape and Reel/Ammopack

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

S07B / 07D / 07G / 07J / 07M

Low Current 7 mm 7-Segment Display

TSHG6400. High Speed IR Emitting Diode in T-1¾ Package. Vishay Semiconductors

TLHE / G / K / P510. High Intensity LED, 5 mm Untinted Non-Diffused VISHAY. Vishay Semiconductors

Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released

Transcription:

TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor BFR 93 / BFR 93 R Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features High power gain Low noise figure High transition frequency 2 3 94 9280 3 2 95 0527 BFR93 Marking: R Plastic case (SOT 23) = Collector; 2= Base; 3= Emitter BFR93R Marking: R4 Plastic case (SOT 23R) = Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters Symbol Value Unit Collector-base voltage V CBO 20 V Collector-emitter voltage V CEO 2 V Emitter-base voltage V EBO 2 V Collector current I C 40 ma Total power dissipation T amb 60 C P tot 200 mw Junction temperature T j 50 C Storage temperature range T stg 65 to +50 C Maximum Thermal Resistance Parameters Symbol Value Unit Junction ambient R thja 450 K/W

BFR 93 / BFR 93 R TELEFUNKEN Semiconductors Electrical DC Characteristics T j = 25 C, unless otherwise specified Parameters / Test Conditions Symbol Min. Typ. Max. Unit Collector cut-off current V CB = 0 V I CBO 00 na Collector-base breakdown voltage I C = 0 A V (BR)CBO 20 V Collector-emitter breakdown voltage I C = 2 ma V (BR)CEO 2 V Emitter-base breakdown voltage I E = 0 A V (BR)EBO 2 V DC forward current transfer ratio V CE = 5 V, I C = 30 ma h FE 25 50 Electrical AC Characteristics T amb = 25 C Parameters / Test Conditions Symbol Min. Typ. Max. Unit Transition frequency V CE = 5 V, I C = 30 ma, f = MHz f T 5 GHz Collector-emitter capacitance V CE = 5 V, f = MHz C CE 0.5 pf Collector base capacitance V CB = 0 V, f = MHz C CB 0.48 pf Emitter-base capacitance V EB = 0.5 V, f = MHz C EB. pf Noise figure V CE = 5 V, I C = 4 ma, R G = 50, f = MHz F.9 db Power gain I C = 30 ma, V CE = 5 V, R L = R Lopt, f = MHz f = MHz G pe 8 G pe 3 Linear output voltage two tone intermodulation test I C = 30 ma, V CE = 5 V, d IM = 60 db, f = 806 MHz, f 2 = 80 MHz, R G = R L = 50 v = v 2 240 mv Third order intercept point I C = 30 ma, V CE = 5 V, f = MHz IP 3 30 dbm db db 2

TELEFUNKEN Semiconductors BFR 93 / BFR 93 R U ce = 5 V, I c = 5 ma, Z o = 50 5 5 00 200 0.73 0.474 0.358 0.30 0.293 0.299 0.328 0.360 0.38 ANG ANG ANG ANG 4. 98.0 32.7 66.0 79.5 67.4 52.7 38.0 30. 2.40 7.54 5.00 3.30 2.7 2.33.93.67.54 48.2 2.4 95.7 8. 73.8 67.0 57.7 49.8 45. 0.03 0.06 0.078 0.04 0.23 0.43 0.73 0.204 0.227 70. 55.9 55.9 59.6 6.2 6.8 62.0 6.5 60.6 0.89 0.68 0.504 0.458 0.460 0.457 0.442 0.430 0.427 7.4 28.8 27.6 24.5 25.5 28.5 34.0 38.4 42.5 U ce = 5 V, I c = 0 ma, Z o = 50 5 0 00 200 0.572 0.344 0.286 0.259 0.258 0.265 0.296 0.327 0.350 ANG ANG ANG ANG 56.5 7.2 5.4 78.7 67.3 57.5 46.7 33.7 26.2 8.26 9.02 5.72 3.69 3.02 2.58 2.3.84.70 37.6 03.8 90.4 78. 7.6 65.5 57.0 49.5 44.8 0.026 0.05 0.073 0.06 0.30 0.52 0.86 0.220 0.243 68.0 62.0 64.7 66.7 66.8 66.0 64.3 62.3 60.5 0.796 0.499 0.43 0.392 0.400 0.400 0.387 0.374 0.37 23.6 29.7 25.5 2.2 22.2 25.6 3.3 35.9 40. U ce = 5 V, I c = 20 ma, Z o = 50 5 20 00 200 0.423 0.272 0.250 0.245 0.24 0.252 0.286 0.37 0.342 ANG ANG ANG ANG 73.5 34.6 65.9 68.7 58.9 52.0 43.2 30.9 23.6 22.83 9.73 6.04 3.88 3.5 2.69 2.22.90.75 27.4 98.0 86.8 75.9 69.8 63.9 55.8 48.5 44.0 0.022 0.047 0.072 0.09 0.34 0.58 0.93 0.228 0.252 67.3 68.3 70.5 70.4 69.3 67.7 65.0 62.4 60.2 0.688 0.422 0.36 0.356 0.368 0.369 0.355 0.343 0.340 28.0 28. 22.3 7.9 9.5 23.5 29.6 34. 38.5 3

BFR 93 / BFR 93 R TELEFUNKEN Semiconductors U ce = 5 V, I c = 30 ma, Z o = 50 5 30 00 200 0.357 0.254 0.248 0.245 0.247 0.255 0.292 0.325 0.349 ANG ANG ANG ANG 84.4 44.3 7.9 64.9 56.3 50.3 4.9 30.3 23.6 24.36 9.78 6.04 3.86 3.4 2.67 2.20.89.74 22. 95.5 85.2 74.7 68.7 63.0 55. 47.9 43. 0.02 0.046 0.072 0.0 0.36 0.60 0.95 0.230 0.254 68. 7.2 72.6 7.5 70. 68.2 65.5 62.5 60.3 0.629 0.393 0.346 0.347 0.360 0.362 0.347 0.337 0.333 29.4 26.0 20.0 6. 8.2 22.5 28.6 33.5 38.0 4

TELEFUNKEN Semiconductors BFR 93 / BFR 93 R Dimensions in mm. 0.9 2.0.8.2 max. technical drawings according to DIN specifications 0.45 0.35 0.5 0.08.4.2 2.6 max. 95 0528 2 (3) 3 (2) 3.0 2.8 0.05 max. 5

BFR 93 / BFR 93 R TELEFUNKEN Semiconductors Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol (987) and its London Amendments (990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 9/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes without further notice to improve technical design. Parameters can vary in different applications. All operating parameters must be validated for each customer application by customer. Should Buyer use TEMIC products for any unintended or unauthorized application, Buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)73 67 283, Fax Number: 49 (0)73 67 2423 6