FTP11N8 N-Channel MOSFET Applications: Automotive DC Motor Control Class D Amplifier Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PACKAGE BRAND FTP11N8 TO-22 FTP11N8 Pb Lead Free Package and Finish V DSS R DS(ON) (Max.) I D 75V 11 mω 1A G D S TO-22 Not to Scale G D S Absolute Maximum Ratings T C =25 o C unless otherwise specified Symbol Parameter FTP6N65 Units V DSS Drain-to-Source Voltage (NOTE *1) 75 V I D Continuous Drain Current 1* I D @ 1 o C Continuous Drain Current Figure 3 A I DM Pulsed Drain Current, @ 1V (NOTE *2) Figure 6 Power Dissipation 23 W P D Derating Factor above 25 o C 1.54 W/ o C Gate-to-Source Voltage ± 2 V E AS Single Pulse Avalanche Engergy L=1 mh, I D =11 Amps 6 mj I AS Pulsed Avalanche Rating Figure 8 dv/dt Peak Diode Recovery dv/dt (NOTE *3) 3. V/ns T L T PKG T J and T STG Maximum Temperature for Soldering Leads at.63in (1.6) from Case for 1 seconds Package Body for 1 seconds Operating Junction and Storage Temperature Range 3 26-55 to 175 o C *Drain Current limited by Maximum Package Current Rating, 75 Amps Caution: Stresses greater than those listed in the Absolute Maximum Ratings Table may cause permanent damage to the device. Thermal Resistance R θjc Junction-to-Case -- --.65 Water cooled heatsink, PD adjusted for o C/W a peak junction temperature of +175 o C. R θja Junction-to-Ambient -- -- 62 1 cubic foot chamber, free air.
OFF Characteristics TJ=25 o C unless otherwise specified BV DSS Drain-to-Source Breakdown Voltage 75 -- -- V =V, I D =25µA BV DSS / T J BreakdownVoltage Temperature Coefficient, Figure 11. --.8 -- V/ o C Reference to 25 o C, I D =25µA -- -- 25 V DS =75V, =V I DSS Drain-to-Source Leakage Current µa -- -- V 25 DS =6V, =V T J =15 o C Gate-to-Source Forward Leakage -- -- 1 V I GS =+2V GSS na Gate-to-Source Reverse Leakage -- -- -1 = -2V ON Characteristics TJ=25 o C unless otherwise specified R Static Drain-to-Source On-Resistance V DS(ON) -- 9.5 11. mω GS =1V, I D =45A Figure 9 and 1. (NOTE *4) (TH) Gate Threshold Voltage, Figure 12. 2. -- 4. V V DS =, I D =25µA gfs Forward Transconductance -- 83 -- S V DS =15V, I D =75A (NOTE *4) Dynamic Characteristics Essentially independent of operating temperature C iss Input Capacitance -- 4 -- =V C oss Output Capacitance -- 15 -- V DS =25V pf f=1.mhz C rss Reverse Transfer Capacitance -- 136 -- Figure 14 Q g Total Gate Charge -- 87 -- VDD=3V Q gs Gate-to-Source Charge -- 32 -- nc ID=75A =1V Q gd Gate-to-Drain ( Miller ) Charge -- 21 -- Figure 15 Resistive Switching Characteristics Essentially independent of operating temperature t d(on) Turn-on Delay Time -- 17 -- V DD =3V t rise Rise Time -- 11 -- I D =75A ns t d(off) Turn-Off Delay Time -- 75 -- =1V t fall Fall Time -- 67 -- R G =4.7Ω Page 2 of 11
Source-Drain Diode Characteristics Tc=25 o C unless otherwise specified I S Continuous Source Current (Body Diode) -- -- 12 A Integral pn-diode I SM Maximum Pulsed Current (Body Diode) -- -- 48 A in MOSFET V SD Diode Forward Voltage -- -- 1.5 V I S =75A, =V t rr Reverse Recovery Time -- 13 195 ns =V Q rr Reverse Recovery Charge -- 34 51 nc I F =75A, di/dt=1 A/µs Notes: *1. T J = +25 o C to +175 o C. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. I SD = 75A di/dt < 1 A/µs, V DD < BV DSS, T J =+175 o C. *4. Pulse width < 38µs; duty cycle < 2%. Page 3 of 11
Duty Factor Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case 1. 5% Z θjc, Thermal Impedance (Normalized).1.1.1 2% 1% 5% 2% 1% single pulse P DM t 1 t 2 NOTES: DUTY FACTOR: D=t1/t2 PEAK T J =P DM x Z θjc x R θjc +T C 1E-5 1E-4 1E-3 1E-2 1E-1 1E+ 1E+1 t p, Rectangular Pulse Duration (s) Figure 2. Maximum Power Dissipation Figure 3. vs Case Temperature 25 8 Maximum Continuous Drain Current vs Case Temperature P D, Power Dissipation (W) 225 2 175 15 125 1 75 5 25 3 2 1 25 5 75 1 125 15 175 25 5 75 1 125 15 175 T T C, Case Temperature ( o C, Case Temperature ( o C) C) I D, Drain Current (A) 7 6 5 4 Figure 4. Typical Output Characteristics. Figure 5. Typical Drain-to-Source ON Resistance vs Gate Voltage and Drain Current I D, Drain Current (A) 14 12 1 8 6 4 2 = 9V = 15V = 1V PULSE DURATION = 1 µs DUTY FACTOR =.5% MAX T C = 25 o C = 8V = 7V = 6V VGS = 5.5V VGS = 5V 5 1 15 2 RDS(ON), Drain-to-Source ON Resistance (Ω).5.4.3.2.1. 4 5 PULSE DURATION =1 µs DUTY FACTOR =.5% MAX T C = 25 o C I D = 1A I D = 5A I D = 25A I D = 12.5A 6 7 8 9 1 11 12 13 14 15 V DS, Drain-to-Source Voltage (V), Gate-to-Source Voltage (V) Page 4 of 11
Figure 6. Maximum Peak Current Capability 1 I DM, Peak Current (A) 1 1 VGS = 1V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I25 15 ---------------------- TC 125 1 1E-6 1E-6 1E-3 1E-3 1E-3 1E+ 1E+ t p, Pulse Width (s) Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive Switching Capability I D, Drain-to-Source Current (A) 12 1 8 6 4 2 PULSE DURATION = 1 µs DUTY CYCLE =.5% MAX TC=25 C +175 o C +25 o C -55 o C 3. 4. 5. 6. 7. 8. I AS, Avalanche Current (A) 1 1 1 STARTING T J = 25 o C STARTING T J = 15 o C If R= : t AV = (L I AS )/(1.3BV DSS -V DD ) If R : t AV = (L/R) ln[i AS R)/(1.3BV DSS -V DD )+1] R equals total Series resistance of Drain circuit 1 1E-6 1E-6 1E-6 1E-3 1E-3, Gate-to-Source Voltage (V) t AV, Time in Avalanche (s) R DS(ON), Drain-to-Source ON Resistance (Ω).18.16.14.12.1.8 Figure 9. Typical Drain-to-Source ON Figure 1. Resistance vs Drain Current PULSE DURATION = 1 µs DUTY CYCLE =.5% MAX TC=25 C = 1V R DS(ON), Drain-to-Source Resistance (Normalized).75 PULSE DURATION = 1 µs DUTY CYCLE =.5% MAX = 1V, I D = 5A.5 25 5 75 1 125 15-75 -5-25 25 5 75 1 125 15 175 I D, Drain Current (A) T J, Junction Temperature ( o C) 2. 1.75 1.5 1.25 1. Typical Drain-to-Source ON Resistance vs Junction Temperature Page 5 of 11
BV DSS, Drain-to-Source Breakdown Voltage (Normalized) 1.15 1.1 1.5 1. Figure 11. Typical Breakdown Voltage vs Figure 12. Junction Temperature.95.75 = V.7 I D = 25 µa.9.65-75 -5-25. 25 5 75 1 125 15 175-75 -5-25. 25 5 75 1 125 15 175 (TH), Threshold Voltage (Normalized) 1.15 1.1 1.5 1..95.9.85.8 = V DS I D = 25 µa Typical Threshold Voltage vs Junction Temperature T J, Junction Temperature ( o C) T J, Junction Temperature ( o C) Figure 13. Maximum Forward Bias Safe Figure 14. Operating Area Typical Capacitance vs Drain-to-Source Voltage 1 1µs 1 C iss I D, Drain Current (A) 1. 1. 1..1 OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) T J = MAX RATED, T C = 25 o C Single Pulse 1µ 1ms 1ms DC 1 1 1.1 1 1 1 C, Capacitance (pf) 1 1 1 = V, f = 1MHz C iss = C gs + C gd C oss C ds + C gd C rss = C gd C oss C rss V DS, Drain-to-Source Voltage (V) V DS, Drain Voltage (V) Figure 15. Typical Gate Charge vs Gate-to- Source Voltage Figure 16. Typical Body Diode Transfer Characteristics 12 15, Gate-to-Source Voltage (V) 1 8 6 4 2 V DS = 19V V DS = 37V V DS = 56V 1 2 3 4 5 6 7 8 9 1.2.4.6.8 1. 1.2 Q G, Total Gate Charge (nc) I D = 75A I SD, Reverse Drain Current (A) 125 1 75 5 25 175 o C 25 o C V SD, Source-to-Drain Voltage (V) = V Page 6 of 11
Test Circuits and Waveforms V DS I D I D V DS V DD Miller Region D.U.T. (TH) 1 ma Q gs Q gd Q g Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform R L V DS 9% V DS V DD R G D.U.T. 1% t d(on) t rise t d(off) t fall Figure 19. Resistive Switching Test Circuit Figure 2. Resistive Switching Waveforms Page 7 of 11
Test Circuits and Waveforms di/dt adj. Current Pump Double Pulse I D di/dt = 1A/µA D.U.T. V DD Q rr L t rr I D Figure 22. Diode Reverse Recovery Waveform Figure 21. Diode Reverse Recovery Test Circuit BV DSS L Series Switch (MOSFET) I AS BV DSS D.U.T. Coutating Diode V DD V DD t AV 5Ω I AS t p I 2 AS L EAS = 2 Figure 23. Unclamped Inductive Switching Test Circuit Figure 24. Unclamped Inductive Switching Waveforms Page 8 of 11
TO-22 Package For Assembly Lot Codes Ending With: xxxxxh H Symbol Minimum, Average, Maximum, A 3.75 dia 3.85 dia 3.95 dia B 25.7 26. 26.3 C 12.1 12.25 12.4 D 3.5 3.6 3.7 J E 2.7 2.75 2.8 F 15.9 16. 16.1 G 1.1 1.3 1.5 K H 1.2 1.3 1.4 J 4.4 4.56 4.67 K 2.1 2.6 3.1 M M.4.54.6 a 1.3 1.4 1.5 b 1.3 1.4 1.5 c.7.8.9 d ---.1 --- G A e 2.42 2.54 2.66 e1 4.83 5.8 5.33 E D C F d a B b c e e1 Page 9 of 11
TO-22 Package For Assembly Lot Codes Ending With: xxxxxs H Symbol Minimum, Average, Maximum, A 3.75 dia 3.85 dia 3.95 dia B 25.7 26. 26.3 C 12.35 12.5 12.65 J D 3.4 3.5 3.6 E 2.72 2.743 2.8 F 15.9 16. 16.1 G 1.1 1.3 1.5 K H 1.7 1.17 1.27 J 4.47 4.57 4.67 K 2.4 2.67 2.92 M M.46.56.57 a 1.27 1.35 1.55 b 1.22 1.27 1.32 c.8.813.86 d ---.1 --- G A e 2.29 2.54 2.79 e1 4.83 5.8 5.33 E D F C d a B b c e e1 Page 1 of 11
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