MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS

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MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC7/SOT package which is designed for low power surface mount applications. Features Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC7/SOT package can be soldered using wave or reflow. The modified gullwinged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/ unit reel. PbFree Packages are Available PIN BASE (INPUT) NPN SILICON BIAS RESISTOR TRANSISTORS R R PIN COLLECTOR (OUTPUT) PIN EMITTER (GROUND) SC7/SOT CASE 9 STYLE MAXIMUM RATINGS (T A = unless otherwise noted) Rating Symbol Value Unit CollectorBase Voltage V CBO Vdc CollectorEmitter Voltage V CEO Vdc Collector Current I C madc THERMAL CHARACTERISTICS Total Device Dissipation T A = Derate above Characteristic Symbol Max Unit P D (Note ) (Note ).6 (Note ). (Note ) Thermal Resistance, JunctiontoAmbient R JA 68 (Note ) (Note ) Thermal Resistance, JunctiontoLead R JL 8 (Note ) (Note ) Junction and Storage Temperature Range mw mw/ C C/W C/W T J, T stg to + C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. FR @ Minimum Pad.. FR @. x. inch Pad. MARKING DIAGRAM 8x M 8x = Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 7 September, 7 Rev. 8 Publication Order Number: MUNT/D

MUNT Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R (K) R (K) Shipping MUNT SC7/SOT 8A / Tape & Reel MUNTG SC7/SOT (PbFree) 8A / Tape & Reel MUNT SC7/SOT 8B / Tape & Reel MUNTG SC7/SOT (PbFree) 8B / Tape & Reel MUNT SC7/SOT 8C 7 7 / Tape & Reel MUNTG SC7/SOT (PbFree) 8C 7 7 / Tape & Reel MUNT SC7/SOT 8D 7 / Tape & Reel MUNTG SC7/SOT (PbFree) 8D 7 / Tape & Reel MUNT SC7/SOT 8E / Tape & Reel MUNTG SC7/SOT (PbFree) 8E / Tape & Reel MUN6T (Note ) SC7/SOT 8F.7 / Tape & Reel MUN6TG (Note ) SC7/SOT (PbFree) 8F.7 / Tape & Reel MUNT SC7/SOT 8G.. / Tape & Reel MUNTG SC7/SOT (PbFree) 8G.. / Tape & Reel MUNT (Note ) SC7/SOT 8H.. / Tape & Reel MUNTG (Note ) SC7/SOT (PbFree) 8H.. / Tape & Reel MUNT SC7/SOT 8J.7.7 / Tape & Reel MUNTG SC7/SOT (PbFree) 8J.7.7 / Tape & Reel MUNT SC7/SOT 8K.7 7 / Tape & Reel MUNTG SC7/SOT (PbFree) 8K.7 7 / Tape & Reel MUNT (Note ) SC7/SOT 8L 7 / Tape & Reel MUNTG (Note ) SC7/SOT (PbFree) 8L 7 / Tape & Reel MUNT SC7/SOT 8M. 7 / Tape & Reel MUNTG SC7/SOT (PbFree) 8M. 7 / Tape & Reel MUN6T (Note ) SC7/SOT 8N / Tape & Reel MUN6TG (Note ) SC7/SOT (PbFree) 8N / Tape & Reel MUN7T (Note ) SC7/SOT 8P 7 / Tape & Reel MUN7TG (Note ) SC7/SOT (PbFree) 8P 7 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D.. New devices. Updated curves to follow in subsequent data sheets.

MUNT Series ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorBase Cutoff Current (V CB = V, I E = ) I CBO nadc CollectorEmitter Cutoff Current (V CE = V, I B = ) I CEO nadc EmitterBase Cutoff Current MUNT, G (V EB = 6. V, I C = ) MUNT, G MUNT, G MUNT, G MUNT, G MUN6T, G MUNT, G MUNT, G MUNT, G MUNT, G MUNT, G MUNT, G MUN6T, G MUN7T, G I EBO.....9.9....8.... madc CollectorBase Breakdown Voltage (I C = A, I E = ) CollectorEmitter Breakdown Voltage (Note ) (I C =. ma, I B = ) V (BR)CBO Vdc V (BR)CEO Vdc ON CHARACTERISTICS (Note ) DC Current Gain MUNT, G (V CE = V, I C =. ma) MUNT, G MUNT, G MUNT, G MUNT, G MUN6T, G MUNT, G MUNT, G MUNT, G MUNT, G MUNT, G MUNT, G MUN6T, G MUN7T, G h FE 6 8 8 6 6. 8. 8 8 8 8 8 6. CollectorEmitter Saturation Voltage (I C = ma, I B =. ma) MUNT, G MUNT, G MUNT, G MUNT, G MUN6T, G (I C = ma, I B = ma) MUNT, G MUNT, G MUN7T, G (I C = ma, I B = ma) MUNT, G MUN6T, G MUNT, G MUNT, G MUNT, G MUNT, G V CE(sat).............. Vdc. Pulse Test: Pulse Width < s, Duty Cycle <.%

MUNT Series ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note ) (Continued) Output Voltage (on) (V CC =. V, V B =. V, R L =. k ) MUNT, G MUNT, G MUNT, G MUNT, G MUN6T, G MUNT, G MUNT, G MUNT, G MUNT, G MUNT, G MUNT, G (V CC =. V, V B =. V, R L =. k ) MUNT, G (V CC =. V, V B =. V, R L =. k ) MUN6T, G (V CC =. V, V B =. V, R L =. k ) MUN7T, G Output Voltage (off) (V CC =. V, V B =. V, R L =. k ) MUNT, G MUNT, G MUNT, G MUNT, G MUNT, G MUNT, G (V CC =. V, V B =. V, R L =. k ) MUNT, G (V CC =. V, V B =. V, R L =. k ) MUNT, G MUN6T, G MUNT, G MUNT, G MUNT, G MUN6T, G MUN7T, G Input Resistor MUNT, G MUNT, G MUNT, G MUNT, G MUNT, G MUN6T, G MUNT, G MUNT, G MUNT, G MUNT, G MUNT, G MUNT, G MUN6T, G MUN7T, G V OL V OH R 7...9 7. 7...7..... 7.9 7.7...7.7. 7.............. 8.6 6. 6...9 6. 6. 8.6.86 6. Vdc Vdc k Resistor Ratio MUNT, G MUNT, G MUNT, G MUNT, G MUNT, G MUN6T, G MUNT, G MUNT, G MUNT, G MUNT, G MUNT, G MUNT, G MUN6T, G MUN7T, G R /R.8.8.8.7.8.8.8..8.8.8.7.........7.7..........8.6.6..6. Pulse Test: Pulse Width < s, Duty Cycle <.%

MUNT Series P D, POWER DISSIPATION (mw) R JA = C/W T A, AMBIENT TEMPERATURE ( C) Figure. Derating Curve

MUNT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNT VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) C ob, CAPACITANCE (pf)... I C /I B = Figure. V CE(sat) versus I C T A = f = MHz I E = V T A = h FE, DC CURRENT GAIN (NORMALIZED).. Figure. DC Current Gain T A = V CE = V T A = V O = V Figure. Output Capacitance. 6 7 8 9 Figure. Output Current versus Input Voltage V O =. V T A = Vin, INPUT VOLTAGE (VOLTS). Figure 6. Input Voltage versus Output Current 6

MUNT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNT VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Cob, CAPACITANCE (pf)... I C /I B = T A = Figure 7. V CE(sat) versus I C f = MHz I E = V T A = IC, COLLECTOR CURRENT (ma) hfe, DC CURRENT GAIN (NORMALIZED)... Figure 8. DC Current Gain V CE = V T A = T A = V O = V 6 8 Figure 9. Output Capacitance Figure. Output Current versus Input Voltage V O =. V Vin, INPUT VOLTAGE (VOLTS) T A =. Figure. Input Voltage versus Output Current 7

MUNT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNT V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Cob, CAPACITANCE (pf)..8.6.. I C /I B = T A = Figure. V CE(sat) versus I C. f = MHz I E = V T A = IC, COLLECTOR CURRENT (ma) hfe, DC CURRENT GAIN (NORMALIZED).. Figure. DC Current Gain T A = V O = V V CE = V T A =. 6 8 Figure. Output Capacitance Figure. Output Current versus Input Voltage V O =. V Vin, INPUT VOLTAGE (VOLTS) T A =. Figure 6. Input Voltage versus Output Current 8

MUNT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNT V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Cob, CAPACITANCE (pf)... 6 8.... I C /I B = T A = Figure 7. V CE(sat) versus I C f = MHz l E = V T A = IC, COLLECTOR CURRENT (ma) hfe, DC CURRENT GAIN (NORMALIZED) V T A = CE = 6 8 6 7 8 9 Figure 8. DC Current Gain T A = V O = V 6 8 Figure 9. Output Capacitance 6 8 Figure. Output Current versus Input Voltage V O =. V T A = Vin, INPUT VOLTAGE (VOLTS). Figure. Input Voltage versus Output Current 9

MUNT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain. C ob, CAPACITANCE (pf).... f = MHz I E = V T A =.. T A = V O = V. 6 7 8 9 Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure 6. Input Voltage versus Output Current

MUNT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain C ob, CAPACITANCE (pf)..... f = MHz I E = V T A =.. T A = V O = V. 6 7 8 9 Figure 9. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current

MUNT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain 6 C ob, CAPACITANCE (pf) f = MHz I E = V T A =.. T A = V O = V. 6 7 8 9 Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure 6. Input Voltage versus Output Current

MUNT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain C ob, CAPACITANCE (pf).... f = MHz I E = V T A =.. T A = V O = V. 6 7 8 9 Figure 9. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current

MUNT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain C ob, CAPACITANCE (pf)..... f = MHz I E = V T A =.. T A = V O = V. 6 7 8 9 Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure 6. Input Voltage versus Output Current

MUNT Series TYPICAL APPLICATIONS FOR NPN BRTs + V ISOLATED LOAD FROM P OR OTHER LOGIC Figure 7. Level Shifter: Connects or Volt Circuits to Logic + V V CC OUT IN LOAD Figure 8. Open Collector Inverter: Inverts the Input Signal Figure 9. Inexpensive, Unregulated Current Source

MUNT Series PACKAGE DIMENSIONS SC7/SOT CASE 9 ISSUE M. (.) D e H E e A E A b A L c NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.8.9.... A...... A.7 REF.8 REF b......6 c..8...7. D.8...7.8.87 E.....9. e....7.. e.6 BSC.6 BSC L. REF.7 REF H E....79.8.9 STYLE : PIN. BASE. EMITTER. COLLECTOR SOLDERING FOOTPRINT*.6..6..9..7.8.9.7 SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Denver, Colorado 87 USA Phone: 677 or 886 Toll Free USA/Canada Fax: 6776 or 8867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8898 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 8778 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MUNT/D