High Voltage Power MOSFET & IGBTs Ester Spitale
ST HV Power MOSFETs: WW most complete offer 1500V 1000V 800V 600V 500V SuperMESH NK SuperMESH 3 K3 MDmesh II SuperMESH 5 K5 MDmesh V 200V Planar Super-junction 1 0.8 0.7 0.5 0.35 0.3 0.2 Normalised R DS(on) x Area
ST Power MOSFET s: Nomenclature 3 ST x 42 N 65 M5 C = TSSOP8 T = SOT23-6L H = H 2 PAK (2 to 7 leads) R = PPAK Z = P 2 PAK Y= Max247 E = ISOTOP Q = TO-92 FW = TO-3PF N = SOT-223 L = PowerFLAT U = IPAK I = I 2 PAK S = SO-8 D = DPAK B = D 2 PAK P = TO-220/Pentawatt F = TO-220FP W = TO-247 PACKAGE INDICATIVE CURRENT RANGE BREAKDOWN VOLTAGE 10 (with the exception of non 10 multiples) CHANNEL POLARITY TECHNOLOGY SPECIAL FEATURES M5 = MDmesh V >200V K3 = SuperMESH3 >300V K5 = SuperMESH5 >900V up to 1500V T = Temperature Sensing C = Current Sensing Z = Clamped by Zener Diode 33-150V D = Fast Recovery Diode N = N- Channel P = P-Channel NS or PS = N-Ch or P-Ch plus Schottky Diode (electrically connected, monolithic included) DNS or DPS = N-Ch or P-Ch plus Schottky Diode (not electrically connected) N N = Two different N-Channel dice N P = Complementary pair DN or DP = Dual N-Ch or Dual P-Ch Insert All the TM
HV MOSFETs: 500V 700V
SuperMESH3 Abs. Max Ratings STD planar SuperMESH 3 V DSS 400V,450V,500V, 600V 400V,450V,525V, 600V,620V,650V Diode dv/dt, di/dt 4.5V/ns, 400A/µs Up to 12 V/ns,400A/µs V th 3V 4.5V 3V 4.5V P Source D.E. Substrate Body P Higher margin & robustness Higher ESD immunity HIGHER V DSS BtB G-S Zeners Higher dv/dt REDUCED Trr Improved DYNAMIC (Qg Ciss, Crss) Lower switching losses
SuperMESH3 Improved dynamic SuperMESH3 Vs equivalent planar device Ciss Coss Crss SuperMESH3 712 112 8 Other Planar (similar R dson ) 920 114 21 Device: STx6N62K3 Conditions : Vds=25V ; f=1mhz ; Vgs=0V ; Tj=25 C SuperMESH3 Features Lower Gate Charge Benefits Lower Switching losses Lower gate driving losses Same R DS(on) planar techno
Why use an ST HV Power MOSFETs!! R DS(on) State-of-the-art MDmesh V MDmesh II Best cost/performance compromise
ST HV Power MOSFETs: WW most complete offer >50 different 600/650V R DS(on) specs from 1.8Ω down to 17mΩ R DS(on) State-of-the-art consolidated technologies high power in innovative packaging among leaders in FReD MOSFETs 300Mpcs sold during 2011 extremely fast time-tomarket MDmesh II Best cost/performance compromise MDmesh V
Multiple Drain mesh Evolution DIFFERENCES - Pitch - Concentration drain n - Ron * Area Key features Low R DS(on) up to 40% less vs MDmesh I Small Qg,Ciss,Coss,Crss Very robust in dv/dt 0.36Ohm in DPAK 600V BEST in Class Key features 650 V lowest R DS(on) x area Higher breakdown voltage MDmesh V targeted for best efficiency in the application Main benefits Main benefits Extremely Low Power Losses Higher current at lower Vgs Avalanche Ruggedness Higher energy saving Increased power density Increased safety margin
MDmeshII: Product range extension BVDss R DS(on) (max) [Ω] Sales Type Package Status 1.800 STx3NM60N PowerFLAT3.3x3.3 Samples 0.900 STx7NM60N 0.700 STx9NM60N 0.550 STx10NM60N DPAK / IPAK TO-220 0.360 STx13NM60N 600V 0.285 STx18NM60N 0.220 STx22NM60N 0.190 STx24NM60N 0.165 STx26NM60N 0.105 STx34NM60N 0.070 STW48NM60N 0.060 STW56NM60N 0.049 STW62NM60N D²PAK TO-247 TO-220/FP TO-247 Full Production Samples 700V 0.350 STx13NM70N TO-220/FP Samples
MDmeshV New MDmeshV devices with improved R ds(on) ST able to beat his record for new concept devices: 29mΩ 650V 63mΩ 650V 220mΩ 650V Best Competition: 650V 37mΩ Best Competition: 650V 74mΩ Best Competition: 650V 250mΩ
MDmesh V: NEW product range Sales Type R DS(on) Package Samples Mass Production STY139N65M5 0.017 Max247 available May 2012 STW88N65M5 0.029 available production TO-247 STW69N65M5 0.045 available production STx57N65M5 0.063 available May 2012 650V STx45N65M5 0.078 available production STx38N65M5 0.095 TO-220 D ² PAK I ² PAK available production STx34N65M5 0.110 May 2012 June 2012 STx31N65M5 0.148 available May 2012 STx18N65M5 0.240 TO-220 available June 2012 STx15N65M5 0.340 TO-247 DPAK May 2012 May 2012 STx11N65M5 0.480 IPAK available production
Very HV: 900V 1700V
VHV MOSFETs: SuperMESH Roadmaps 14 1500V to 2200V SuperMESH 5 (Extension up to 2200V) 850V to 1200V SuperMESH 5 950V to 1200V SuperMESH3 2010 2011 2012 2013 Eng. samples Maturity
SuperMESH 5: Very HV SJ revolution Key features 900V-1200V lowest R DS(on) x area Lowest FOM (R DS(on) *Q g ) Designed for best efficiency STL23N85K5 850V 0.275Ω PowerFLAT8x8 STD6N95K5 950V 1.250Ω DPAK STP20N95K5 950V 0.330Ω TO-220 STFW6N120 1200V 0.690Ω TO-3PF Main benefits Higher energy saving Faster switching speed Increased safety margin TO-3PF PowerFLAT 8x8 TO-3PF for higher creepage
R DS(on) MAX (Ω) SuperMESH 5: best in class FoM = R DS(on) Q g (Ω nc) 0,299 0,34 32 12 STP21N90K5 Best Competitor STP21N90K5 900V TO-220 Benchmark Best Competitor
SuperMESH 5: best in class Targets* by Package/Voltage R DS(on) MAX (mω) 950V 1050V 1200V ISOTOP 48 70 100 Max247 85 120 175 TO-247 150 215 320 TO-3PF 175 250 370 TO-220 330 460 690 DPAK 1250 1700 2600 Production Samples In development * Simulated data
SuperMESH 3 & 5 very HV series Very first available specs: V DS [V] R DS(on) (max) [Ω] P/N Package Samples Production 1.2 STx7N80K5 DPAK/IPAK 800 0.950 STx8N80K5 TO-220/TO-220FP/TO-247 0.375 STx12N80K5 TO-220/TO-220FP/TO-247 0.260 STx25N80K5 TO-220/TO-220FP/TO-247 Q2 2012 Q3 2012 850 0.275 STL23N85K5 PowerFLAT 8x8 HV Available Q2 2012 900 0.299 STx21N90K5 TO-220/TO-220FP/TO-247 1.250 STx6N95K3 DPAK/IPAK/TO-220/TO-220FP/ TO-247 950 0.850 STx13N95K3 TO-220/TO-220FP/TO-247 0.360 STW25N95K3 TO-247 Available Production 0.330 STx20N95K5 TO-220/TO-220FP/TO-247 1050 11 STx1N105K3 DPAK/TO-220 End Q2 2012 1200 2.400 STx6N120K3 TO-220/TO-3PF/TO-247 0.690 STx12N120K5 TO-220/TO-3PF/TO-247 Q2 2012 Q3 2012
VHV MOSFETs for 3-ph aux. SMPS 19 Main Benefits Specifically targeted for 3-Ф aux. SMPS PV inverter Welding Industrial Drvies High reliability makes each solution stronger Wide choice of packages, including new fully isolated TO-3PF, for easier solution V DS [V] P/N R DS(on) (max) [Ω] Packages TO-3PF Higher creepage for electrical insulation STW9N150 2.5 TO-247 1500 STx4N150 7 TO-247/ TO-3PF/TO-220/H2PAK STx3N150 9 TO-247/ TO-3PF/TO-220/H2PAK 1700 STx3N170* 13 TO-247/ TO-3PF/TO-220 * By Q3 12 19
About Packages 20
PowerFLAT The smart solution to reduce space Space Tickness Weight Simplicity Area Thickness 4.5mm 2.3mm 1mm 150 mm 2 64 mm 2 D²PAK DPAK PowerFLAT8x8
PowerFLAT 3.3 x 3.3 HV INNOVATION IN PACKAGES This innovative HV, 1 mm high, surface-mount package, featured both with ST s 600V MDmesh II and MDmesh V technologies, increases power density reducing thickness and weight Features Maximum thickness: 1 mm Unequalled low RDS(on) x area Clearance / Creepage distance: 1.4 mm Benefits Compactness Higher power density
PowerFLAT product range 3x3 HV P/N V DS [V] R DS(on) (max) [Ω] Status STL3NM60N 600 1.8 Samples Available STL3N65M5 650 1.2 Q3 12 Samples P/N V DS [V] R DS(on) (max) [Ω] Status 5x5 HV STL3NK40 400 5 Full Production STL7NM60N 600 0.9 Full Production STL11N65M5 650 0.6 Q3 12 Samples
PowerFLAT product range P/N V DS [V] R DS(on) (max) [Ω] Status 5x6 HV STL5N52K3 525 1.5 Upon Request STL4N62K3 620 1.95 Upon Request STL12N65M5 650 0.530 Samples in Q3 12 STL15N65M5 650 0.374 Samples in Q3 12 STL18N65M5 650 0.240 Samples in Q3 12 STL20N65M5 650 0.200 Samples in Q3 12 STL7N80K5 800 1.2 Samples in Q3 12 STL8N80K5 800 0.99 Samples in Q4 12
P/N PowerFLAT 8x8 product range V DS [V] R DS(on) (max) [Ω] Status STL18N55M5 0.216 550 STL36N55M5 0.090 Samples available by Q3 12 STL23NM60ND 0.180 STL26NM60N 0.185 STL24NM60N 600 0.215 Full Production STL18NM60N 0.309 STL13NM60N 0.385 STL57N65M5 0.069 Samples available by Q3 12 STL31N65M5 0.162 Samples available by Q3 12 STL22N65M5 0.200 Samples available by Q3 12 650 STL18N55M5 0.216 Samples available by Q3 12 STL19N65M5 0.240 Samples available by Q3 12 STL17N65M5 0.374 Samples available by Q3 12 STL23N85K5 850 0.275 Samples available
IGBT technologies 26
IGBT: Nomenclature for New Products 27 STG x 60 H 65 y DD Fy TECHNOLOGY Fx = Trench Gate Field Stop P = Planar PT PACKAGE DIODE FEATURES D = Very Fast Recovery DR = Ultra Fast Recovery DL = Low Forward Voltage B = D 2 PAK D = DPAK E = ISOTOP F = TO-220FP FW = TO-3PF I = I 2 PAK L = PowerFLAT TM (8x8) P = TO-220 U = IPAK (-S for short leads) W = TO-247 WA = TO-247 LL WT = TO-3P Y = Max247 SPECIAL FEATURES BREAKDOWN VOLTAGE 10 TECHNOLOGY SERIES Exception (if any ) C = Current Sensing T = Temperature Sensing Z = Clamped by Zener Diode L = Logic Level H = High speed (8 30 khz) V = Very High speed (20 100 khz) M = Low Loss ( up to 20 khz) MAX CONTINUOUS CURRENT @ 100 C
Trench Gate Field Stop IGBT: Suitable for high voltage and high current applications Features Low E OFF due to improved minority carrier recombination (Field Stop ) Positive Temperature coefficient in V CE(sat) resulting in a safer paralleling operation Main Applications PhotoVoltaic Uninterruptable Power Supply Welding emitter gate Low V CE(sat) (Trench gate) Power Factor Corrector High switching robusteness (Large SOA) Low RTH (Thin wafer thickness) Hybrid Electric Veichles Induction Heating collector
1200V IGBT TFS High Frequency series MAT 20 STGW25H120DF Product Features: IGBT in Trench Gate Field Stop Technology 1200V break down rated Final die thickness: 110µm Very low R TH Positive derating of V CE(sat) Tailored for High speed switching application Preliminary Results (on packaged parts) Symbol Characteristic Typical Value 25 C 150 C BV CES Collector to Emitter breakdown voltage 1200 V V CESAT V GE = 15V, I C = 25A 2.1 2.3 V E OFF V CC =600V, V GE =15 0V, R GOFF =22Ω, I C =25A 0.75 1.63 mj Simulated benchmark based on datasheet values Unit Topology: Full Bridge Main Specs: P Out =3kW, f Sw =20kHz, D Max =90%, Î Out 20A, T j =125ºC Device (Trench FS) I C (nom) P Con (W) P Sw (W) P Tot (W) (*) STGW25H120DF 25A @ 100 C 11.92 11.15 23.1 Competitor 1 25A @ 100 C 10.37 12.10 22.5 Competitor 2 25A @ 110 C 10.89 12.74 23.6 Competitor 3 25A @ 100 C 13.48 10.51 24.0 Samples Available (*) switching-on power losses have been neglected for all the devices under benchmark, since they basically depend of co-packaged diode
MAT 30 650V IGBT TFS High Frequency Final Results (on packaged parts) series STGW60H65DF Product Features: IGBT in Trench Gate Field Stop Technology 650V break down rated Final die thickness: 80µm Very low R TH Positive derating of V CE(sat) Tailored for High speed switching application Symbol BV CES Characteristic Collector to Emitter breakdown voltage Typical Value 25 C 150 C Unit 650 V V CESAT V GE = 15V, I C =60A 1.9 2.1 V E OFF V CC = 400V, V GE = 15V 0, R G = 10Ω, I C = 60A 1.05 1.4 mj Simulated benchmark based on datasheet values Topology: Full Bridge Main Specs: P out =5kW, f sw =16kHz, D Max =90%, Î Out 30A, T J =150ºC Device (Trench FS) I C (nom) P Con (W) P Sw (W) P Tot (W) (*) STGW60H65DF 60A @ 100 C 13.11 4.21 17.3 Competitor 1 50A @ 100 C 13.51 3.67 17.2 Competitor 2 58A @ 100 C 14.70 3.06 17.8 Competitor 3 60A @ 100 C 13.91 4.08 18.0 (*) switching-on power losses have been neglected for all the devices under benchmark, since they basically depend of co-packaged diode
600V/650V Discrete IGBT Product Plan H series (8 30 khz) 31 BV CES` I CN 1) V CESAT @ I CN Short Circuit 2) Sales Type Main Applications Packages Eng. Samples Production 600 V 20 A 1.6 V 6 µs STGP20H60DF 30 A 1.9 V 6 µs STGP30H60DF UPS, PFC, motor control UPS, PFC, motor control TO-220, FP Available Production TO-220, FP, TO-247 Available Production 650 V 60 A 1.9 V 6 µs STGW60H65DF Solar, UPS, PFC TO-247 Available Production 60 A 1.9 V 6 µs STGW60H65DRF Solar, UPS, PFC TO-247 Available Production 1) continuous I C @ 100 C 2) Test condition V CC = 400V, V GE = 15V, T Jstart = 25 C T JMAX = 175 C