SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is a solid state class AB amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip technology and reliable Motorola push pull transistors. Specified 8 Volts, 47 86 MHz Characteristics Output Power 1 Watts (CW) Gain 8 db Min (@ 1 W) 5 Ω Input and Output Impedance 1 W C.W. (8 V) 7 W P. SYNC. (3 V) 47 86 MHz RF POWER AMPLIFIER CASE 49, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage VCC 3 Vdc Quiescent Current ICQ [ x 3] madc Input Power Pin 35 W Storage Temperature Range Tstg to + C Operating Temperature (1) Top to +7 C ELECTRICAL CHARACTERISTICS (TC = 5 C, VCC = 8 V, ICQ = x ma, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Instantaneous Bandwidth BW 47 86 MHz Input Return Loss IRL 15 db FUNCTIONAL TESTS IN CW (SOUND) (TC = 5 C, VCC = 8 V, ICQ = x ma, f = 47 86 MHz, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Power Gain (Pout = 1 W) Gp 8 db Gain Ripple (Pout = 1 W) Grple ±1 db Output Power @ 1 db Compression Pout 1 W Mismatch Tolerance (Pout = 1 W) VSWR 3:1 Efficiency (Pout = 1 W) η 48 51 % FUNCTIONAL TESTS IN VIDEO (standard black level) Peak Output Power (synch.) (VCC = 8 Vdc) Characteristic Symbol Min Typ Max Unit Pout1 3 W Peak Output Power (synch.) (VCC = 3 Vdc) Pout 7 W NOTE: 1. Temperature is measured at temperature test point (on the flange of the transistor). MOTOROLA Motorola, Inc. 1994 RF DEVICE DATA 1
TYPICAL CHARACTERISTICS CW WIDEBAND 11 G p,power GAIN (db) 9 VCC = 8 V Pout = 1 W COMPRESSION (db) 1 VCC = 8 V Pout = 1 W 45 9 45 9 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 1. Power Gain versus Frequency Figure. Gain Compression versus Frequency Is,CURRENT (A) 14 13 1 11 45 9 f, FREQUENCY (MHz) VCC = 8 V Pout = 1 W Figure 3. Supply Current versus Frequency MAXIMUM AVERAGE OUTPUT POWER (CW) 1 16 1 6 3 5 6 7 TRANSISTOR FLANGE TEMPERATURE ( C) Figure 4. Maximum Average Output Power versus Temperature MAXIMUM PEAK SYNCH. OUTPUT POWER (CW) 36 3 16 3 5 6 7 TRANSISTOR FLANGE TEMPERATURE ( C) Figure 5. Maximum Peak Synch. Output Power (B/G Standard) versus Temperature
TYPICAL VIDEO CHARACTERISTICS @ f = 86 MHz TEST CONDITIONS: DIFF. Gain, Steps Channel 61 VCE = 8 V VIDEO SIGNAL % % 9 7 6 5 3 Pout = 16 W Pout = W Pout = 5 W Figure 6. Differential Gain 9 7 6 5 3 3
APPLICATIONS INFORMATION HEATSINK TOOLING 4.5 4 7.5 6 3.5 1.5.3 Ra.8 8 Fixing holes M3 Minimum useful depth: 6 mm Cavities 5 Minimum depth: 1 mm MOUNTING RECOMMENDATIONS THERMAL COMPOUND Paste with silicones: SICERONT KF Ref. 1 Recommended. Thickness: Optimum between.6 mm and.15 mm, on the whole back surface of the amplifier. (Typical volume: 7 mm 3 for.1 mm thickness) (Equivalent weight: 1.5g for. density paste). SCREWS Socket head cap screws: CHC M3 x for Copper/Aluminum Heatsink. Material: Nickel plated steel. WASHERS Split lock washers WZ 3 + Flat washers ZU 3. 4
MOUNTING RECOMMENDATIONS (continued) TIGHTENING ORDER 5 1 8 INPUT 3 4 OUTPUT 7 6 Recommended Torque: 1 Kg.cm (.5 in.lbs) MOUNTING VERIFICATION Make the amplifier work at nominal RF conditions, and measure temperature on points 1,, 3, and 4. T1 T T3 Characteristic Typ Max Unit T1, T, T3, T4 (T1, T), (T3, T4) 3 7 5 C C T4 CLEANING Some components of the amplifier are not qualified for every kind of cleaning solvent; do not clean the amplifier in a solvent bath. Local cleaning is recommended. 5
PACKAGE DIMENSIONS B K J H G N 1 P M D S Q 8 PL A R 3 F L COMPONENT AREA C GROUND TO CASE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198.. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L M N P Q R S MILLIMETERS MIN MAX 114.88 115.1 84.88 85.1 15. 3. 3.6 4.5 4.9 3. 3.6 14.6 15. 69.6 7. 76.9 77. 81. 81.6 7.9 8. 7. 7.6 4. 4.6 54.9 55. 3. 3. 111. 111.6.9 81. INCHES MIN MAX 4.53 4.53 3.34 3.351.591.134.14.177.193.134.14.575.66.7.77 3.5 3.35 3.5 3.13.311.319 1.79 1.87 1.669 1.677.161.169.1.134 4.386 4.394 3.185 3.193 STYLE 1: PIN 1. RF INPUT. DC VOLTAGE 3. RF OUTPUT GROUND TO PLANE CASE 49 ISSUE A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 91; Phoenix, Arizona 8536. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-3-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 MOTOROLA RF DEVICE /D DATA