Flexible Hybrid Electronics Fabricated with High-Performance COTS ICs using RTI CircuitFilm TM Technology

Similar documents
Processes for Flexible Electronic Systems

77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data Sheet

Application Bulletin 240

Fraunhofer IZM - ASSID

Electrical Test Vehicle for High Density Fan-Out WLP for Mobile Application. Institute of Microelectronics 22 April 2014

Diagnosing the Future of Medical Applications

Challenges in Imaging, Sensors, and Signal Processing

MID Manufacturing Process.

Gain Slope issues in Microwave modules?

A Miniaturized Multi-Channel TR Module Design Based on Silicon Substrate

Integration of Optoelectronic and RF Devices for Applications in Optical Interconnect and Wireless Communication

Design Considerations for Highly Integrated 3D SiP for Mobile Applications

Visit: rf.cdiweb.com Toll-Free:

MA4AGSW2. AlGaAs SP2T PIN Diode Switch. MA4AGSW2 Layout. Features. Description. Absolute Maximum Ratings TA = +25 C (Unless otherwise specified)

Flip-Chip for MM-Wave and Broadband Packaging

insert link to the published version of your paper

Data Sheet. VMMK GHz Variable Gain Amplifier in SMT Package. Features. Description. Specifications (6 GHz, Vdd = 5 V, Zin = Zout = 50 Ω)

Application Note 5011

MGA GHz 3 V, 17 dbm Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package. Simplified Schematic

Wafer-scale 3D integration of silicon-on-insulator RF amplifiers

Data Sheet. VMMK GHz Positive Gain Slope Low Noise Amplifier in SMT Package. Features. Description

Application Note 5012

The 3D Silicon Leader

Behzad Razavi, RF Microelectronics, Prentice Hall PTR, 1998

RF2334. Typical Applications. Final PA for Low Power Applications Broadband Test Equipment

A Bandgap Voltage Reference Circuit Design In 0.18um Cmos Process

Packaged mm-wave GaN, GaAs and Si ICs for 5G and automotive radar

RF2044A GENERAL PURPOSE AMPLIFIER

Georgia Tech. Greetings from. 3D Modeling and Process Design Kits for Flexible Hybrid Electronics (FHE) Challenges and Opportunities

Fixed Attenuator Die YAT-D-SERIES. The Big Deal Excellent power handling, up to 2W Wideband, DC to 26.5 GHz Usable to 40 GHz

Smart Devices of 2025

Application Note 5525

Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking 4 V CC. Note: Package marking provides orientation and identification.

Parameter Frequency Typ (GHz) See page 7 for minimum performance specs of AMM7602UC connectorized modules. Description Green Status

Monolithic Amplifier Die

Low Noise Amplifier Design Methodology Summary By Ambarish Roy, Skyworks Solutions, Inc.

POSSUM TM Die Design as a Low Cost 3D Packaging Alternative

EMERGING SUBSTRATE TECHNOLOGIES FOR PACKAGING

CMP for More Than Moore

DC to 45 GHz MMIC Amplifier

GaAs MMIC Non-Linear Transmission Line. Description Package Green Status

Recent Developments in Multifunctional Integration. Stephan Guttowski, Head of Technology Park»Heterointegration«, Fraunhofer FMD

SHELLCASE-TYPE WAFER-LEVEL PACKAGING SOLUTIONS: RF CHARACTERIZATION AND MODELING

MGA GHz 3 V, 17 dbm Amplifier. Data Sheet

AMMC KHz 40 GHz Traveling Wave Amplifier

Ultra-thin, highly flexible RF cables and interconnections

License to Speed: Extreme Bandwidth Packaging

Innovative ultra-broadband ubiquitous Wireless communications through terahertz transceivers ibrow

!"#$"%&' ()#*+,-+.&/0(

PRINTED ELECTRONICS TECHNOLOGIES

Application Note 1360

Integration Techniques for MMICs and Chip Devices in LTCC Multichip Modules for Radio Frequencies

Motivation. Approach. Requirements. Optimal Transmission Frequency for Ultra-Low Power Short-Range Medical Telemetry

Operation of Microwave Precision Fixed Attenuator Dice up to 40 GHz

End-of-line Standard Substrates For the Characterization of organic

Inductor Modeling of Integrated Passive Device for RF Applications

Printed Electronics and Additive Microelectronic Packaging For RF/Microwave Applications

Hot Topics and Cool Ideas in Scaled CMOS Analog Design

Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology

Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400

RF2044 GENERAL PURPOSE AMPLIFIER

64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array

Managing Complex Impedance, Isolation & Calibration for KGD RF Test Abstract

MMIC: Introduction. Evangéline BENEVENT. Università Mediterranea di Reggio Calabria DIMET

ABA GHz Broadband Silicon RFIC Amplifier. Application Note 1349

RF MEMS for Low-Power Communications

Data Sheet. MGA GHz 3 V, 14 dbm Amplifier. Description. Features. Applications. Simplified Schematic

Wiring Parasitics. Contact Resistance Measurement and Rules

GaN: Applications: Optoelectronics

New fabrication and packaging technologies for CMOS pixel sensors: closing gap between hybrid and monolithic

HMPP-386x Series MiniPak Surface Mount RF PIN Diodes

Ultra-Wide-Band (UWB) Band-Pass-Filter Using Integrated Passive Device (IPD) Technology for Wireless Applications. STATS ChipPAC D&C YongTaek Lee

SiP packaging technology of intelligent sensor module. Tony li

Parameter Frequency Typ Min (GHz)

Lecture: Integration of silicon photonics with electronics. Prepared by Jean-Marc FEDELI CEA-LETI

Active and passive component embedding into low-cost plastic substrates aimed at smart system applications

Packaging Roadmap: The impact of miniaturization. Bob Pfahl, inemi Celestica-iNEMI Technology Forum May 15, 2007

Testing of Flexible Metamaterial RF Filters Implemented through Micromachining LCP Substrates. Jonathan Richard Robert Dean Michael Hamilton

GaAs MMIC Millimeter Wave Doubler. Description Package Green Status

Data Sheet. VMMK GHz Directional Detector in SMT Package. Features. Description. Specifications (35 GHz, Vb = 1.5 V, Zin = Zout = 50 Ω)

Signal Integrity Design of TSV-Based 3D IC

Features. Preliminary. = +25 C, IF = 1 GHz, LO = +13 dbm*

Designing Cost Competitive E-band Radio Front-ends

Organic Packaging Substrate Workshop Overview

Through Glass Via (TGV) Technology for RF Applications

A passive circuit based RF optimization methodology for wireless sensor network nodes. Article (peer-reviewed)

Measurement Results for a High Throughput MCM

Optical Bus for Intra and Inter-chip Optical Interconnects

Advanced Wafer Level Packaging of RF-MEMS with RDL Inductor

Ultra-Thin, Highly Flexible Cables and Interconnections for Low and High Frequencies

Thin Film Resistor Integration into Flex-Boards

MICROELECTRONICS ASSSEMBLY TECHNOLOGIES. The QFN Platform as a Chip Packaging Foundation

RF5633 SINGLE 5.0V, 3.3 TO 3.8GHZ LINEAR POWER AMPLIFIER

VLSI Chip Design Project TSEK06

DC to 30GHz Broadband MMIC Low-Noise Amplifier

FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS. T AMB = +25 C ( Unless otherwise specified )

Plan Optik AG. Plan Optik AG PRODUCT CATALOGUE

Product Catalog. Semiconductor Intellectual Property & Technology Licensing Program

CHAPTER 4. Practical Design

Manufacturing Development of a New Electroplated Magnetic Alloy Enabling Commercialization of PwrSoC Products

Transcription:

Flexible Hybrid Electronics Fabricated with High-Performance COTS ICs using RTI CircuitFilm TM Technology Scott Goodwin 1, Erik Vick 2 and Dorota Temple 2 1 Micross Advanced Interconnect Technology Micross Components, Research Triangle Park, NC 2 Engineered Materials, Devices and Systems RTI International, Research Triangle Park, NC June 21, 2017 www.micross.com RTI International is a registered trademark and a trade name of Research Triangle Institute. www.rti.org

Micross Advanced Interconnect Technology 2 Technologies Developmental foundry for microfabrication and 3D microsystem Integration Thermal management solutions for integrated microsystems Novel microfabricated sensors Core strengths Advanced semiconductor processing equipment and analytical instrumentation 25 years+ track record in microelectronics and optoelectronics technology development Diverse client base: government, commercial and academic translational research Collaborative research with RTI International

Micross Wafer-Level Microsystem Integration FPGA Memory Detector Modules for Hadron Collider High Performance Computing Modules Advanced Signal Processors for Infrared Sensors Wafer-Level Vacuum Packaging for Infrared Sensors Extensive toolbox of wafer-level microsystem integration techniques to reduce size, weight and power and enhance performance of electronic components and systems 3

Emergence of Flexible Hybrid Electronics Printed transistors and passives Si CMOS ICs 4 Roll-to-roll processes Flexible Electronics Electronic Packaging Sheet-to-sheet or wafer-to-wafer processes

Commercial and Defense Applications of FHE Microsystems Flexible electronic systems for use in limited space applications where there is not enough physical space for rigid boards Small missile systems, UAVs Conformal surface applications for antennas and associated electronics Airframe surfaces Infantry uniforms and flexible armor Support electronics for small form factor displays Wearable sensors Fully flexible, thin and light while incorporating advanced data processors and RF transmitters and transceivers for wireless communications Calls for high-performance integrated circuits (ICs) Ease of system design requires ICs to be COTS 5

Process Technology Dilemma and Potential Solution Progress in development of bottom up process technology for fabrication of thin-film transistors on flexible substrates Compatibility with wide range of flexible substrates Uses low temperature processing techniques, such as printing or physical vapor deposition Performance of thin-film transistors has been limited to cutoff frequencies in MHz range for a long time State-of-the-art ICs built in monocrystalline materials have cutoff frequencies in GHz to THz range. Paradigm shift in properties of traditional monocrystalline ICs was introduced by development of 3D IC integration technology ICs can be thin, light, bendable without impact on performance. Opens doors to embedding of ultra-thin monocrystalline ICs in flexible substrates. 6

3D Integration Technology Toolbox Applied to FHE 7 Key process modules include wafer thinning, bonding and bump and direct interconnects.

RTI CircuitFilm CircuitFilm microcontroller ultrathin battery antenna sensors Ultra-thin, flexible Si die incorporated into a polymer substrate COTS devices are thinned and embedded in a polymer Benefits: Use of best-in-class COTS components Integration of mixed semiconductor technologies (eg, Si, GaAs, HgCdTe, etc ) Rapid design-to-delivery cycle time Includes integration of passives Direct interconnects Potential for full integration including power Applications: Defense and security Implantable medical devices Wearable physiological sensors 8

RTI CircuitFilm TM Structure Fabricated using conventional wafer processing Can use known good COTS die Release from handle wafer at conclusion of processing COTS die passivated by flexible substrate and MLM dielectrics Thinned COTS die Direct interconnects Fine pitch interconnect Flexible substrate Passives Not to scale 9

Design Considerations Path needed from PCB-based design to FHE-based design While there are broad similarities between PC Board design and thin flexible systems design, there are important differences that need to be addressed Different design tools in PC Board design and IC design Thin flexible systems will exist in both design spaces Most tools can adapt to FHE systems with relatively small changes Need better layout to GDS file conversions Different scale and dimensions in the physical traces between PC Boards and thin flexible systems Generally small dimensions and fewer layers in thin flexible systems than in PC Boards Different RF performance, ground and power plane resistances, different parasitics Concepts of power, testing, and connectors are different 10

Passives Passives are key to being able to integrate COTS parts into a complete system on a flexible substrate Some passives are commercially available that are thin enough to be incorporated into CircuitFilm TM substrates Too thick and air bubbles can form around edges IPDIA has 100µm thick capacitors available Small capacitors and resistors can be fabricated from MLM levels We fabricated inductors on 100µm thick quartz substrates 1.4nH to 61nH on 2mm die Resistors could be fabricated with appropriate choice of metals on wafers that are thinned IPDIA 100µm thick capacitors 11 Additional commercial suppliers needed Fabricated inductors

Other Issues Availability of ICs of different materials and device types in thinned formats or that can be thinned Connectors to thin flexible films Need new designs with either mechanical or metallurgical interfaces that are compatible with thin flexible films Some designs may be wirelessly interfaced Testing of thin flexible film systems Use of temporary connectors or probes Testing only possible of completed systems Power sources Require thin and flexible, capable of process integration Reduced substrate thickness may place antenna elements near ground planes Reduces antenna operating bandwidth, reduces data rates 12

Example Design PLL RF Transmitter based on Atmel T5750 Uses bare die Atmel T5750, MEMS oscillator, passive inductor and capacitor, additional resistor and capacitors fabricated in wiring levels Two wiring levels 21.1 x 13.4 mm 13

Fabricated Demonstration Circuit Based on Atmel RF Transmitter bare die Air bubbles formed around unthinned MEMS oscillator die Tears in overlying thin polymer layers Repaired with silver colloidal paste Inductor MEMS Oscillator Capacitor 14 Atmel die Probe Pads Fabricated Capacitors

Operation of Completed CircuitFilm TM Demonstration Atmel RF transmitter generates ASK signal from input signal (1kHz) and oscillator output Increases oscillator frequency 64X 64x14.318MHz = 916.4MHz Probed while still on carrier wafer Measured using spectrum analyzer Frequency sweep of output showing peak at 916.4MHz Transformed output generated by spectrum analyzer showing 1kHz signal 45µW output signal 15

Operation of Completed CircuitFilm TM Demonstration Circuit released from handle wafer Probed flat Probed on curved surface Radius = 44 mm Released CircuitFilm TM probed on flat surface Released CircuitFilm TM Probed on curved surface 16

RF Transmission from CircuitFilm TM Demonstration RF transmission test using two random length long wire antennas (42 inches) connected to output of circuit. Measure expected power decrease of 6dBm with doubled distance. 0 Measured Power vs. Distance 17 ~ -80dBm at ~260ft Measured Power (dbm) -10-20 -30-40 -50-60 -70-80 0 10 20 30 40 50 60 70 80 Distance (ft)

Mechanical Flexing Testing Mechanical testing of parametric test circuits has been done Circuits investigate different aspects of CircuitFilm TM technology Integrity of CircuitFilmTM metal lines Integrity of CircuitFilmTM vias Integrity of metal lines routed up over embedded passives Integrity of direct interconnects to contact chain passive Flexed multiple cycles with different radii and directions of curvature Radii of 11mm and 22mm Cumulative flexed cycles up to 11,000 No formation of open circuits in any of the test sites Testing continuing 18

Conclusions New, emerging opportunities in thin flexible hybrid microsystems Defense and security applications, implantable medical devices, wearable physiological sensors Paradigm shift from traditional printed circuit board systems Development of 3D IC integration technology opens pathway for fabrication of ultra-thin monocrystalline ICs with excellent performance RTI CircuitFilm TM technology incorporates thinned COTS devices in flexible polymer film Best-in-class COTS devices and performance Design tools and design methodology need to be adjusted for flexible hybrid microsystems Thinner and finer pitch metal lines available on IC processing tools First demonstration circuit fabricated using CircuitFilm TM technology Demonstrates incorporation of thinned COTS die, direct interconnect, and passive components Fully functional circuit on handle wafer and released flexible film 19

Acknowledgements This material is based upon work supported in part by the U.S. Army Research Laboratory and the U.S. Army Research Office under contract number W911NF-14-C-0100. Thanks to the staff of Micross Micro-Fabrication Facility and Analytical Laboratory 20