Description The IG26series is pnchromtic PIN photodiode with nominl wvelength cutoff t 2.6 µm. This series hs been designed for demnding spectroscopic nd rdiometric pplictions. It offers excellent shunt resistnce in combintion with superior responsivity over wide rnge. Fetures 50 % cutoff wvelength > 2.45 µm Typicl pek responsivity:.45 A/W Excellent temperture stbility Reduced edge effect Applictions Spectrophotometer Diode lser monitoring Noncontct temperture mesurement Flme control Moisture monitoring Versions Uncooled TOcn, chip only, digitl module Cooled TE, TE2, TE3 Lser Components, Inc.
Opticl Chrcteristics, Specifictions @ 25 C c Prt Number 50% Cut off Wvelength Pek Wvelength Pek Responsivity,b Responsivity @ 520 nm,b,d Responsivity @ 600 nm,b Responsivity @ 900 nm,b Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. S4i 250 IG26X500S4i 500 S4i 000 IG26X300S4i 300 >2.45 2.25+/ 0..30.50 TBD 0. 0.7.0.08.36 Gi 2000 Gi 3000 Prmeter tested on btch level t T =25 C. b Responsivity mesured t 0 V Bis. c Dt re prior to window integrtion. d Preliminry dt ElectroOpticl Chrcteristics, Specifictions @ 25 C Prt Number Shunt Impednce @ = 0 mv b [kohm] Drk Current @ = 0.25 V b [µa] Pek D* f= khz [cm Hz ½ /W] Pek NEP f= khz [W/Hz ½ ] Min. Typ. Typ. Mx. Min. Typ. Mx. Typ. S4i 250 25 60 2 8 8.3 E+0.2 E+ 6.0 E3 4.2 E3 IG26X500S4i 500 0 25 4 25 7.4 E+0.2 E+.0 E2 6.0 E3 S4i 000 3 9 8 75 5.7 E+0.0 E+.8 E2.0 E2 IG26X300S4i 300 4 5 50 3.7 E+0 7.6 E+0 3.0 E2.5 E2 Gi 2000 0.6.5 30 300 3.6 E+0 5.8 E+0 3.9 E2 2.4 E2 Gi 3000 0.25 0.7 75 750 2.8 E+0 4.8 E+0 6.0 E2 3.6 E2 Prmeter tested on btch level b Prmeter 00% tested 2 Lser Components, Inc.
Electricl Chrcteristics, Specifictions @ 25 C Prt Number Cpcitnce @ = 0 V [pf] Forwrd Voltge [V] Typ. Typ. S4i 250 35 IG26X500S4i 500 40 S4i 000 580 IG26X300S4i 300 040 0.48 Gi 2000 920 Gi 3000 3200 Prmeter tested on btch level Thermoelectriclly Cooled InGAs Detectors Prt Number Operting Temperture [ C] Shunt Impednce @ = 0 mv b [kohm] Pek D* [cm Hz ½ /W] Pek NEP [W/Hz ½ ] Cpcitnce @ = 0 V [pf] Min. Typ. Typ. Typ. Typ. T7 250 300 625.9 E+.2 E3 35 T7 000 80 40 3.6 E+ 2.4 E3 580 IG26X300T7 300 20 5 44.5 2.6 E+ 4.3 E3 040 T7 2000 3 33 3.5 E+ 5.0 E3 925 T7 3000 3.5 9.2 2.8 E+ 9.6 E3 3200 T9 250 000 2000 4.0 E+ 5.6 E4 35 T9 000 300 590 7.4 E+.2 E3 580 IG26X300T9 300 40 65 95 5.5 E+ 2.0 E3 040 T9 2000 60 35 7. E+ 2.5 E3 920 T9 3000 5 32 5.2 E+ 5. E3 3200 Prmeter tested on btch level b Prmeter 00% tested 3 Lser Components, Inc.
Absolute Mximum Rtings Min. Mx. Storge Temperture [ C] 55 +25 Operting Temperture [ C] 40 +85 Reverse Bis, cw [V] Forwrd Current, cw [ma] Soldering Temperture, 5 sec. [ C] 260 ESD Dmge Threshold, Humn Body Model Clss 0*, [V] 0 <250 TE Cooler Voltge [V] T7 T9 0.8 3.7 TE Cooler Current [A] T7 T9.9.2 *ANSI/ ESD STN5. 2007 4 Lser Components, Inc.
Fig. : Spectrl Response Spectrl Response Zoom 2 Typicl, T = 25 C,6 Typicl,75,4,5,2 Responsivity (A/W),25 0,75 0,5 Responsivity (A/W) 0,8 0,6 0,4 0,25 25C 20C 40C 65C 0 450 700 950 200 450 700 950 2200 2450 2700 2950 Wvelength (nm) 65 C 0,2 25 C 0 40 C 20 C 2200 2400 2600 Wvelength (nm) Fig. 2: Drk Current vs. Reverse Voltge Fig. 3: Shunt Resistnce vs. Temperture,00E03 Typicl, T = 25 C,00E+04 Typicl, Vr = 0 mv Drk Current (A),00E04 IG26X300,00E05,00E06,00E07,00E08 0 0,05 0, 0,5 0,2 0,25 0,3 Reverse Voltge (V) Shunt (kω),00e+03,00e+02,00e+0,00e+00,00e0,00e02 40 20 0 20 40 60 80 00 Temperture ( C) IG26X300 Fig. 4: Detectivity vs. Shunt x Are Fig. 5: Cpcitnce vs. Reverse Voltge 0 Typicl, T = 25 C,00E+04 Typicl Detectivity D* x 0 0 (cm Hz /2 / W) 9 8 7 Cpcitnce (pf),00e+03,00e+02,00e+0 IG26X300 6 40 45 50 55 60 Ro Are (cm² Ω),00E+00 0 2 3 4 5 6 Reverse Voltge (V) 5 Lser Components, Inc.
Fig. 6: Responsivity Temperture Coefficient I Fig. 7: Responsivity Temperture Coefficient II 0,05 Typicl 0,95 Typicl 0,03 0,75 % Chnge / C 0,0 0,0 0,03 25 C to 65 C 40 C to 25 C % Chnge / C 0,55 0,35 0,5 25 C to 65 C 40 C to 25 C 0,05 400 600 800 000 200 400 600 800 2000 2200 Wvelength (nm) 0,05 2200 2250 2300 2350 2400 2450 2500 2550 2600 Wvelength (nm) Fig. 8: Smple Pulse Response Fig. 9: Linerity,2 05 Typicl, Wvelength = 30 nm Normlized Response (.u.) 0,8 0,6 0,4 0,2 Typicl, λ Test =30nm, Frequency = 00kHz RL = 50Ω, Bis = 0V Reltive Sensitivity (%) 00 95 90 85 80 75 0 0 2 3 4 5 6 7 8 9 0 Time (μs) 70 0 2 4 6 8 0 2 Incident Light Level (mw) 6 Lser Components, Inc.
Nomenclture C I G 2 6 X 2 5 0 S 4 i Type Pckge Style Chip only Extended InGAs PIN Photodiode 250 = 250 µm 500 = 500 µm S4i TO46, isolted S4ix TO46, no window 000 = mm Gi TO39, isolted 300 =.3 mm Gix TO39, no window 2000 = 2 mm T7 TO37, single stge TEC 3000 = 3 mm T9 TO66, dul stge TEC M2 2 pd PCB SMD L5 TO46 lens cp Stndrd window: Borosilicte glss Pckge drwings, TEC nd thermistor curves cn be found on seprte dtsheet. Product Chnges LASER COMPONENTS reserves the right to mke chnges to the product(s) or informtion contined herein without notice. No libility is ssumed s result of their use or ppliction. Ordering Informtion 707/6 / V5 / HW / lcdgi/ig26series Products cn be ordered directly from LASER COMPONENTS or its representtives. For complete listing of representtives, visit our website t Lser Components, Inc.