Low Voltage Power MOSFET Technical Marketing Power Transistor Division IMS Sector March-2012
Technology Roadmap 10/03/2012
MOSFET Technology Roadmap 4 STripFET V H5 STripFET DeepGATE H6 STripFET DeepGATE H7 Q3 Q4 STripFET DeepGATE H8 Q2 Q4 2012 2013 2014 Eng. samples Maturity Presentation Title 10/03/2012
H5 H6 H7 MOSFET Technology Roadmap 5 Parameters STripFET V H5 series STripFET VI DeepGATE H6 series STripFET VII DeepGATE H7 series R DS(on) *A die @10V [mw x mm 2 ] 1 D = - 25% D = - 60% R DS (on)*a die @4.5V [mw x mm 2 ] 1 D = - 5% D = - 50% FoM= R DS (on)*qg @4.5V [mw x nc] 1 D = +25% D = - 50%
MOSFET Technology Roadmap 6 STripFET III F3 STripFET V F5 40V STripFET DeepGATE F4 series 55 150V STripFET VI DeepGATE F6 series 40 80V STripFET VII DeepGATE F7 series 55 200V Q1 Q2 2011 2012 2013 Eng. samples Maturity
Rdson[mΩ] Rdson[mΩ] STripFET VII DeepGATE F6 series 7 Technology Benefict Key features Higher efficiency Robust design Small form factor of final system High avalanche ruggedness Improved RDSon x Area vs. STripFET III Technology available in TO220, H2PAK and PowerFLAT 5x6 STripFET VI DeepGATE vs prev. generations 40V PowerFLAT 5x6 21% 60V H 2 PAK-2 13% Trenh Planar Qrr[nc] 21.6 74.3 Trr[ns] 30 48 Irm[A] 1.1 2.56 70%
R DS on[max]@10v] STripFET VII DeepGATE F7 series 8 100V F7 vs Best competition Technology 10% Key Features Industry s lowest RDS(on) Improved RDSon x Area vs. STripFET III Benefict Higher efficiency Robust design Small form factor of final system Application Power Supply Telecom Motor control Solar Automotive
P-Channel, Technology Roadmap 10 Metal Gate Body Epy Source STripFET VI DeepGATE Q2 Q3 STripFET VI DeepGATE Q3 Q1 STripFET VII DeepGATE Q3 Q1 2012 2013 2014 Eng. samples Maturity
< 1 mm > 1 mm SMD package overview 13 Up to 3W Up to 4W Up to 5.5W SO-8 SOT223 TSSOP-8 SOT23-6L SOT23-3L PowerFLAT TM 2x2 PowerFLAT TM 3.3x3.3 PowerFLAT TM 5x6 PowerFLAT TM 5X6 d.i. PowerFLAT 5x6 Dual cool PowerFLAT TM 5X6 a. d.i. PowerFLAT TM 5x6 cd
Wires RIBBON MOSFET Technology Roadmap 14 Up to 100A Up to 160A Up to 300A PowerSO-10 TM DPAK H 2 PAK H 2 PAK-6 H 2 PAK-7 DPAK PowerSO-10 TM D 2 PAK
Key features Key features Packages suitable to drive very High Currents (>120 Amps) Customer wide options choice H2PAK will improve RDSon Vs standard one Applications Applications Motor Control SMPS: Synchronous Rectification, OR-ing H 2 PAK, high current package 15 Assembly Assembly Ribbon Bonding will give a competitive advantage H2PAK, pin configurations H 2 PAK With Wire H 2 PAK With Ribbon H 2 PAK-7 H 2 PAK-6 H 2 PAK-62 H 2 PAK-2 D G G S G S S S G All Pins uncut STHxxxNyzz-7 Pin 4 cut STHxxxNyzz-6 Pin 2 cut STHxxxNyzz-62 Full compatible with D 2 PAK STHxxxNyzz-2
High current evolution 16 Drain Current Continuous 120 A 160 A 180 A 220 A TO220 D 2 PAK H 2 PAK POWERSO-10 Wire Bonding Ribbon Bonding RDson TYP @ 25 C 2.1 mω 1.6 mω 1.4 mω 1.25 mω RDson MAX @25 C 2.6 mω 2.0 mω 1.7 mω 1.5 mω IDcont @ 100 C 120 A 160 A 180 A 220 A
PowerFLAT, leadless package 17 Key features Low thickness/weight Low Rthj-pcb thermal resistance Low parasitic inductance Low parasitic package resistance Multiple sources Small form factor Key features High power capability Less parasitic losses High switching frequency operation High current handling Top side heat dissipation Key features PowerFLAT 5x6 d.s.c PowerFLAT 5x6 PowerFLAT 5x6 d.i. PowerFLAT 3.3x3.3 PowerFLAT 2x2 asymmetric symmetric Common drain
4.5mm 2.3mm 1mm PowerFLAT Versus DPAK 18 D 2 PAK DPAK PowerFLAT 5x6 150 mm 2 63.2 mm 2 30 mm 2 The smart solution to reduce space Four times thiner than D²PAK Surface on PCB is Twice thinner than DPAK 80% smaller than D²PAK 60% smaller than DPAK
Different assembly process capability 19 SO-8/PowerFLAT bonding impact on R DS (on) Features Gold wires 6x2 mils Ribbon 2x30x4 mils Clip R DS (on) @4.5V [mω] 8.5 R DS (on) @10V [mω] 6.7 This comparison is made on same die size 6.7 (-20%) 4.6 (-30%) ~5.7 (-33%) ~3.7 (-44%) R DS (on) @4.5V [mω] 8.5 R DS (on) @10V [mω] 6.7 6.7 (-20%) 4.6 (-30%) ~5.7 (-33%) ~3.7 (-44%)
Features Exposed metal source on top side Package outline comparable with SO-8 & PowerFLAT5x6 Low profile (0.8mm min) Full encapsulated silicon Thermal performances PowerFLAT P [W] T j-c [ºC] Dual side cool packages 20 Benefict Low operating temperature and longer operating life Exceptional die protection and easy handling & manufacturability Higher current handling capability than standard packages with same size Enabled higher power density Low total system silicon cost Multiple sources Single side cooling 53 1 Dual Side cooling 28-47% Package botton Package top Section Package Botton Package Top Section
ST s products solution 10/03/2012
STripFET VI DeepGATE F3 series 22 Product portofolio Part Number BVDS [V] RDS(on) (max) [mω] Qg(typ) [nc] Status Package STP180N10F3 100 5.1 114 Prod Features High avalanche ruggedness Improved RDSon x Area vs. F3 Application Powes supply Telecom Adapter Solar STP130N10F3 100 9.6 50 Avail STH180N10F3-2 100 4.5 114 Prod TO220 STF180N10F3 100 5.1 114 Pord TO220FP STH180N10F3-2 100 4.5 114 Prod H 2 PAK-2 STL70N10F3 100 7.8 50 Q4/11 STL30N10LF3 100 35 15 Q1/12 Performance PowerFLAT 5x6
STripFET VI DeepGATE F4 series 23 Product portofolio Part Number BVDS [V] RDS(on) (max) [mω] Qg(typ) [nc] Status Package Features High current capability Application Motor control E-bike Ups Industrial STP90N55F4 55 8 90 Prod STP80N70F4 68 9.8 76 Prod STP78N75F4 75 11 90 Prod STP165N10F4 100 5.5 180 MAT29 STP70N10F4 100 16.5 60 Prod STP90N15F4 150 16 175 MAT10 STH165N10F4-2 100 5.1 180 MAT10 STH90N15F4-2 150 17 130 MAT20 STL25N15F4 150 63 48 Prod TO220 H2PAK-2 PowerFLAT 5x6
STripFET VI DeepGATE F6 series 24 Product portofolio Part Number BVDS [V] RDS(on) (max) [mω] Qg(typ) [nc] Status Package Features High avalanche ruggedness Improved RDSon x Area vs. F3 Application Powes supply Telecom Adapter Solar STP110N55F6 55 5.2 120 Availble S STP260N6F6 60 3 150 Prod STP77N6F6 60 7.9 66 By April S STPxxN7F6 68 8 98 By May S STP210N75F6 75 3.8 140 Prod STH320N4F6-2 40 1.25 190 Q3/12 MP STH260N6F6-2 60 2 150 Prod STH210N75F6-2 75 2.8 140 Prod STL180N4LF6 40 2.1 63 Q1/12 S STL100N6LF6 60 4.5 130 Q1/12 MP STL80N75F6 75 5.5 100 Q1/12 MP STL75N8LF6 80 7.4 135 Prod TO220 H2PAK-2 PowerFLAT 5x6
MOSFET Logic Level 25 Application 4.5 mcu output voltage Electric vehicles Hybrid vehicle Benefict low power fast switching low leakage current Part Number BVDS [V] Product portofolio RDS(on) (max) [mω] Qg(typ) [nc] @10V @4.5V @3.3V @2.5V @10V STL100N1VH5 12 3 4 26 STL120N2VH5 20 3 4 STL7N6VF3 60 70 STL40N75LF3 75 19 21 11 STL30N10LF3 100 35 50 15 Package PowerFLAT 5x6 STL16N1VH5 12 3 4 26 PowerFLAT 3.3*3.3
PowerFLAT 5x6 Product portfolio 26 VI Dee Features STripFET V STripFET DeepGATE STripFET VII DeepGATE PN BV DSS [V] Product portofolio R DS (on) (max) [mohm] 10V 4.5V Qg (typ) [nc] Ciss [pf] Status STL51N3LLH5 30 14.5 17.5 5 724 Prod. STL56N3LLH5 30 9 11.2 6.5 950 Prod. STL60N3LLH5 30 7.1 9.5 8 1290 Prod. STLxxN3LLH7 30 6 8 6 TBD Q3 12 STL65N3LLH5 30 5.8 7.5 12 1500 Prod. STL80N3LLH6 30 5.2 7.6 17 1700 Prod. STL90N3LLH6 30 4.5 7.3 17 1700 Prod. STL100N3LLH7 30 3 4.5 14 1700 Q3 12 Application Industrial Server Telecom Computer STL150N3LLH6 30 2 3.4 40 4040 Prod. STLxxN3LLH7 30 2 3.5 18 1950 Q3 12 STL150N3LLH5 30 1.75 2.4 40 5800 Prod.
PowerFLAT 5x6 Product portfolio 27 Product portofolio PN BV DSS [V] R DS (on) (max) [mohm] Qg (typ) [nc] Ciss [pf] Status VI Dee Features STripFET V STripFET DeepGATE STripFET VII DeepGATE Application Industrial Server Telecom Computer 10V 4.5V 2.5V STL100N1VH5 12 3 4 24 5x6 Prod STL16N1VH5 12 3 4 24 Prod 3.3x3.3 STL15N4LLF5 40 6.7 9 12.9 MC30 STL7N6F3 60 21 13.6 MC30 STL70N4LLF5 40 6.7 9 12.9 Prod. STL140N4LLF5 40 2.7 3.1 45 Prod. STL180N4LF6 40 2.1 3.4 63 Q1 Sampes STL35N6F3 60 21 13.6 Prod. STL100N6LF6 60 4.5 7.2 100 5x6 Q1 Prod STL85N6F3 60 5.7 50 Prod. STL80N75F6 75 5.5 100 Q1 Prod STL75N8LF6 80 7.4 11.4 125 Prod STL70N10F3 100 8.4 50 Q1 Prod
Key features 75V LV MOSFET for LED driving 35 Key Application Features Main switch for Boost converter with 10~20W LED Customers Philips, GE & FSP-Powerland LED lighting with DC input, output driving 6~10 LED in series Low power, 10~20W Boost topology 600kHz switching frequency Counter lighting in department store etc. Key parameters Low Voltage MOSFET BVdss 75V Rdson <19mOhm@10V Qg =19nC Package: PowerFLAT 5x6
38 Low Voltage Technical Marketing Power Transistor Division, IMS Group