Small Signal Zener Diodes Features Silicon Planar Power Zener Diodes Standard Zener voltage tolerance is ± 5 % e2 These diodes are also available in Mini- MELF case with the type designationtzm522...tzm5267, SOT-23 case with the type designation MMBZ5225...MMBZ5267 and SOD-23 case with the types designation MMSZ5225... MMSZ5267 Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC 94 9367 Applications Voltage stabilization Mechanical Data Case: DO-35 Glass case Weight: approx. 25 mg Packaging codes/options: TAP / k per Ammopack (52 mm tape), 3 k/box TR / k per 3" reel, 3 k/box Absolute Maximum Ratings T amb, unless otherwise specified Parameter Test condition Symbol Value Unit Power dissipation T L 25 C P V 5 mw Z-current P V / ma Thermal Characteristics T amb, unless otherwise specified Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air l = 4 mm, T L = constant R thja 3 K/W Junction temperature 75 C Storage temperature range T stg - 65 to + 75 C Electrical Characteristics T amb, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 2 ma V F. V Rev..6, 22-Dec-5
Electrical Characteristics Test Current Maximum N522B...N5267B Partnumber Nominal Zener Voltage ) Dynamic Impedance ) Maximum Dynamic Impedance Typical Temperature of Coeffizient Maximum Reverse Leakage Current at T, T Z ZT at T Z ZK at K = at T I R V R.25 ma V ma Ω Ω α (%/K) µa V N522B 2.4 2 3 2 -.85 N5222B 2.5 2 3 25 -.85 N5223B 2.7 2 3 3 -.8 75 N5224B 2.8 2 3 4 -.8 75 N5225B 3 2 29 6 -.75 5 N5226B 3.3 2 28 6 -.7 25 N5227B 3.6 2 24 7 -.65 5 N5228B 3.9 2 23 9 -.6 N5229B 4.3 2 22 2 +.55 5 N523B 4.7 2 9 9 +.3 5 2 N523B 5. 2 7 6 +.3 5 2 N5232B 5.6 2 6 +.38 5 3 N5233B 6 2 7 6 +.38 5 3.5 N5234B 6.2 2 7 +.45 5 4 N5235B 6.8 2 5 75 +.5 3 5 N5236B 7.5 2 6 5 +.58 3 6 N5237B 8.2 2 8 5 +.62 3 6.5 N5238B 8.7 2 8 6 +.65 3 6.5 N5239B 9. 2 6 +.68 3 7 N524B 2 7 6 +.75 3 8 N524B 2 22 6 +.76 2 8.4 N5242B 2 2 3 6 +.77 9. N5243B 3 9.5 3 6 +.79.5 9.9 N5244B 4 9 5 6 +.82. N5245B 5 8.5 6 6 +.82. N5246B 6 7.8 7 6 +.83. 2 N5247B 7 7.4 9 6 +.84. 3 N5248B 8 7 2 6 +.85. 4 N5249B 9 6.6 23 6 +.86. 4 N525B 2 6.2 25 6 +.86. 5 N525B 22 5.6 29 6 +.87. 7 N5252B 24 5.2 33 6 +.88. 8 N5253B 25 5 35 6 +.89. 9 N5254B 27 4.6 4 6 +.9. 2 N5255B 28 4.5 44 6 +.9. 2 N5256B 3 4.2 49 6 +.9. 23 N5257B 33 3.8 58 7 +.92. 25 N5258B 36 3.4 7 7 +.93. 27 N5259B 39 3.2 8 8 +.94. 3 N526B 43 3 93 9 +.95. 33 N526B 47 2.7 5 +.95. 36 N5262B 5 2.5 25 +.96. 39 N5263B 56 2.2 5 3 +.96. 43 N5264B 6 2. 7 4 +.97. 46 2 Rev..6, 22-Dec-5
Partnumber Nominal Zener Test Current Maximum Voltage ) Dynamic Impedance ) Maximum Dynamic Impedance Typical Temperature of Coeffizient Maximum Reverse Leakage Current at T, T Z ZT at T Z ZK at K = at T I R V R.25 ma V ma Ω Ω α (%/K) µa V N5265B 62 2 85 4 +.97. 47 N5266B 68.8 23 6 +.97. 52 N5267B 75.7 27 7 +.98. 56 ) Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 3 K/W Typical Characteristics (Tamb unless otherwise specified) R thja - Therm. Resist. Junction Ambient (K/W) 5 4 3 l l 2 T L = constant 5 5 2 I - Lead Length (mm) 95 96 Figure. Thermal Resistance vs. Lead Length tn - Relative Voltage Change.3.2...9.8-6 6 2 8 95 9599 tn = t / (25 C) TK VZ = x -4 /K 8 x -4 /K 6 x -4 /K 4 x -4 /K 2 x -4 /K - 2 x -4 /K - 4 x -4 /K - Junction Temperature ( C) 24 Figure 3. Typical Change of Working Voltage vs. Junction Temperature - Voltage Change (mv) 5 95 9598 = 5 ma 5 2 25 P tot - Total Power Dissipation (mw) 6 5 4 3 2 4 8 2 6 2 95 962 T amb - Ambient Temperature ( C) Figure 2. Typical Change of Working Voltage under Operating Conditions at T amb Figure 4. Total Power Dissipation vs. Ambient Temperature Rev..6, 22-Dec-5 3
TK VZ - Temperature Coefficient of ( -4 /K) 5 5-5 95 96 = 5 ma 2 3 4 5 - Z-Current (ma) 8 6 4 2 4 6 8 2 2 95 964 P tot = 5 mw T amb Figure 5. Temperature Coefficient of Vz vs. Z-Voltage Figure 8. Z-Current vs. Z-Voltage 2 5 C D - Diode Capacitance (pf) 5 5 V R = 2 V - Z-Current (ma) 4 3 2 P tot = 5 mw T amb 5 5 2 25 5 2 25 3 35 95 96 95 967 Figure 6. Diode Capacitance vs. Z-Voltage Figure 9. Z-Current vs. Z-Voltage (Ω) I F - Forward Current (ma)....2.4.6.8. r Z - Differiential Z-Resistance = ma 5 ma ma Tj 5 5 2 25 95 965 V F - Forward Voltage (V) 95 966 Figure 7. Forward Current vs. Forward Voltage Figure. Differential Z-Resistance vs. Z-Voltage 4 Rev..6, 22-Dec-5
Thermal Resistance for Pulse Cond. (KW) Z thp t p /T =.5 t p /T =.2 t p /T =. t p /T =.5 t p /T =.2 t p /T =. Single Pulse - 2 R thja = 3 K/W T = m ax T amb i ZM = ( +(V 2 Z +4r zj x T/Z th p ) / 2 )/(2r zj ) 95 963 t p Pulse Length (ms) Figure. Thermal Response Package Dimensions in mm (Inches) Cathode Identification ISO Method E.55 (.2) max. 94 9366 2. (.8) max. Standard Glass Case 54 A 2 DIN 488 JEDEC DO 35 26 (.2) min. 3.9 (.5) max. 26 (.2) min. Rev..6, 22-Dec-5 5
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