Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO49 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO49 is Pb-free (meets ROHS & Sony 9 specifications). Features Q Q V DS (V) = 3V V DS (V) = 3V I D = 8.A I D =7A (V GS = V) R DS(ON) < 7mΩ <6mΩ (V GS = V) R DS(ON) < mω <3mΩ (V GS = 4.V) SCHOTTKY V DS (V) = 3V, I F = 3A, V F <.V@A UIS TESTED! Rg,Ciss,Coss,Crss Tested D D D D G S/A Absolute Maximum Ratings T A = unless otherwise noted Parameter Drain-Source Voltage Continuous Drain Current AF Pulsed Drain Current B Power Dissipation Avalanche Current B T A = T A =7 C T A = T A =7 C Repetitive avalanche energy.3mh B 3 4 Gate-Source Voltage Junction and Storage Temperature Range 8 7 6 SOIC-8 G D/S/K D/S/K D/S/K Q Symbol Max Q Max Q Units 3 3 V V DS V GS I D I DM P D G I AR S K A ± 8. 6.8 7 Q G ± 6.4 4 3 E AR 43 34 mj T J, T STG - to - to C S 7.8.8 V A W A Parameter Reverse Voltage Continuous Forward Current AF Pulsed Diode Forward Current B Power Dissipation A T A = T A =7 C T A = T A =7 C Junction and Storage Temperature Range Symbol V DS I F I FM P D T J, T STG Maximum Schottky Units 3 V 3. A.8 W - to C
Parameter: Thermal Characteristics MOSFET Q Symbol Typ Maximum Junction-to-Ambient A t s 48 Maximum Junction-to-Ambient A R θja Steady-State 74 Maximum Junction-to-Lead C Steady-State 3 R θjl Max 6. 4 Units C/W Parameter: Thermal Characteristics MOSFET Q Symbol Typ Max Maximum Junction-to-Ambient A t s 48 6. R θja Maximum Junction-to-Ambient A Steady-State 74 Maximum Junction-to-Lead C Steady-State 3 4 R θjl Units C/W Thermal Characteristics Schottky Maximum Junction-to-Ambient A t s 47. 6. R θja Maximum Junction-to-Ambient A Steady-State 7 Maximum Junction-to-Lead C Steady-State 3 4 R θjl C/W A: The value of R θja is measured with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.% max. E. These tests are performed with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A=. The SOA curve provides a single pulse rating. F. The current rating is based on the t s junction to ambient thermal resistance rating. Rev 6: Jan 7 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Q Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =µa, V GS =V 3 V I DSS Zero Gate Voltage Drain Current V DS =3V, V GS =V T J = C I GSS Gate-Body leakage current V DS =V, V GS = ±V na V GS(th) Gate Threshold Voltage V DS =V GS I D =µa. V I D(ON) On state drain current V GS =4.V, V DS =V A R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =7.A V GS =4.V, I D =6.A 6 T J = 3.6 38 4.3 3 mω g FS Forward Transconductance V DS =V, I D =7A S V SD Diode Forward Voltage I S =A.78 V I S Maximum Body-Diode Continuous Current 3 A DYNAMIC PARAMETERS C iss Input Capacitance 9 7 pf C oss Output Capacitance V GS =V, V DS =V, f=mhz 6 pf C rss Reverse Transfer Capacitance 4 6 pf R g Gate resistance V GS =V, V DS =V, f=mhz..4.6 Ω SWITCHING PARAMETERS Q g Total Gate Charge 6.4 7.3 nc Q gs Gate Source Charge V GS =4.V, V DS =V, I D =7.A.46 nc Q gd Gate Drain Charge.6 nc t D(on) Turn-On DelayTime 3.7. ns t r Turn-On Rise Time V GS =V, V DS =V, R L =.Ω, 3.. ns t D(off) Turn-Off DelayTime R GEN =3Ω 4.9 ns t f Turn-Off Fall Time. 4 ns t rr Body Diode Reverse Recovery time I F =7A, di/dt=a/µs. 6 ns Q rr Body Diode Reverse Recovery charge I F =7A, di/dt=a/µs 4. nc A: The value of R θja is measured with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.% max. E. These tests are performed with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A=. The SOA curve provides a single pulse rating. F. The current rating is based on the t s junction to ambient thermal resistance rating. Rev 6: Jan 7 µa mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Q TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 V 3.V 4.V 3V V GS =.V 6 8 4 V DS =V 3 4 Fig : On-Region Characteristics... 3 3. Figure : Transfer Characteristics 3.8 R DS(ON) (mω) 8 6 4 8 6 V GS =4.V V GS =V Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance.6.4..8 I D =7A V GS =4.V V GS =V Temperature ( C) Figure 4: On resistance vs. Junction Temperature R DS(ON) (mω) 7 6 4 3 I D =7A 4 6 8 Figure : On resistance vs. Gate-Source Voltage I S (A).E+.E+.E-.E-.E-3.E-4.E-...4.6.8. V SD (Volts) Figure 6: Body-Diode Characteristics
Q TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 V DS =V I D =7A 7 6 C iss f=mhz V GS =V 3 Capacitance (pf) 4 3 C rss C oss 3 4 6 Q g (nc) Figure 7: Gate-Charge Characteristics 3 Figure 8: Capacitance Characteristics.. R DS(ON) limited T J(Max) = C, T A = ms ms.s µs µs Power (W) 4 3 T J(Max) = C T A =. s. s DC. Figure 9: Maximum Forward Biased Safe Operating Area (Note E)... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =6. C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance P D T on T
Q Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =µa, V GS =V 3 V V R =3V.7. Zero Gate Voltage Drain Current. (Set I DSS V 3. ma by Schottky leakage) R =3V, T J = V R =3V, T J = C I GSS Gate-Body leakage current V DS =V, V GS = ±V na V GS(th) Gate Threshold Voltage V DS =V GS I D =µa.8 3 V I D(ON) On state drain current V GS =4.V, V DS =V 3 A R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =8.A V GS =4.V, I D =7A 3.8 7 T J = 4 9.7 mω g FS Forward Transconductance V DS =V, I D =8.A 3 S V SD Diode+Schottky Forward Voltage I S =A.4. V I S Maximum Body-Diode+Schottky Continuous Current 3. A DYNAMIC PARAMETERS C iss Input Capacitance 97 6 pf C oss Output Capacitance (FET + Schottky) V GS =V, V DS =V, f=mhz 9 pf C rss Reverse Transfer Capacitance 4 pf R g Gate resistance V GS =V, V DS =V, f=mhz.3.7.8 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 9. 3 nc Q g Total Gate Charge 9.36. nc V GS =V, V DS =V, I D =8.A Q gs Gate Source Charge.6 nc Q gd Gate Drain Charge 4. nc t D(on) Turn-On DelayTime. 7. ns t r Turn-On Rise Time V GS =V, V DS =V, R L =.8Ω, 4.4 6. ns t D(off) Turn-Off DelayTime R GEN =3Ω 7.3 ns t f Turn-Off Fall Time 3.3 ns t rr Body Diode + Schottky Reverse Recovery Time I F =8.A, di/dt=a/µs 9.3 3 ns Q rr Body Diode + Schottky Reverse Recovery Charge I F =8.A, di/dt=a/µs 9.4 nc A: The value of R θja is measured with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.% max. E. These tests are performed with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A=. The SOA curve provides a single pulse rating. F. The current rating is based on the t s junction to ambient thermal resistance rating. Rev 6: Jan 7 mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Q TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 4V V 4.V 3.V 3 V DS =V V GS =3V 6 3 4 Fig : On-Region Characteristics.. 3 3. 4.7 Figure : Transfer 4Characteristics 8.7 R DS(ON) (mω) 8 4 V GS =4.V.3 V GS =V, V DS =V, R L =.8Ω, R GEN =3Ω V GS =V 3 Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance.6..4...9 I D =8.A V GS =4.V V GS =V Temperature ( C) Figure 4: On resistance vs. Junction Temperature 6.E+ I D =8.A.E+ R DS(ON) (mω) 4 3 I S (A).E-.E-.E-3.E-4 FET+SCHOTTKY 4 6 8 Figure : On resistance vs. Gate-Source Voltage.E-...4.6.8. V SD (Volts) Figure 6: Body-Diode Characteristics (Note F)
Q TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 6 4.... 4 8 6 Q g (nc) Figure 7: Gate-Charge Characteristics R DS(ON) limited V DS =V I D =8.A T J(Max) = C, T A = ms Capacitance (pf) Power (W) 7 ms.s V GS =V, V DS =V, R L =.8Ω, R GEN =3Ω s s µs DC µs. Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 4 3 C iss C oss FET+SCHOTTKY C rss f=mhz V GS =V 3 Figure 8: Capacitance Characteristics 4 8.7 T J(Max) = C T A =... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =6. C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance P D T on T