N-Channel Enhancement Mode MOFET Features Pin Description 3V/7, R D(ON) =4.5mΩ (typ.) @ V G = V R D(ON) =6mΩ (typ.) @ V G = 4.5V uper High Dense Cell Design valanche Rated Reliable and Rugged Lead Free and Green Devices vailable (RoH Compliant) D D D D Top View of KPK D D D D G pplications G Power Management in Notebook Computer, or Decktop Computer. N-Channel MOFET Ordering and Marking Information PM4354 ssembly Material Handling Code Temperature Range Package Code Package Code KP : KPK Operating Junction Temperature Range C : -55 to 15 o C Handling Code TR : Tape & Reel ssembly Material G : Halogen and Lead Free Device PM4354 KP : PM4354 XXXXX XXXXX - Date Code Note: NPEC lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoH. NPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-TD-2C for ML classification at lead-free peak reflow temperature. NPEC defines Green to mean lead-free (RoH compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 15ppm by weight). NPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
bsolute Maximum Ratings (T = 25 C unless otherwise noted) ymbol Parameter Rating Unit Common Ratings (T =25 C Unless Otherwise Noted) V D Drain-ource Voltage 3 V G Gate-ource Voltage ±2 V T J Maximum Junction Temperature 15 C T TG torage Temperature Range -55 to 15 C I Diode Continuous Forward Current T C =25 C 5 I DP T C =25 C 15 3µs Pulse Drain Current Tested T C = C 9 Mounted on Large Heat ink I D P D Continuous Drain Current T C =25 C 7 T C = C 4 Maximum Power Dissipation T C =25 C 5 T C = C 2 W R θjc Thermal Resistance-Junction to Case 2.5 C/W Mounted on PCB of 1in 2 pad area I D P D Continuous Drain Current T =25 C 17 T = C 11 Maximum Power Dissipation T =25 C 2.5 T = C 1 W R θj Thermal Resistance-Junction to mbient 5 C/W Mounted on PCB of Minimum Footprint I D P D Continuous Drain Current T =25 C 14 T = C 8 Maximum Power Dissipation T =25 C 1.5 T = C.5 W R θj Thermal Resistance-Junction to mbient 75 C/W 2
Electrical Characteristics (T = 25 C unless otherwise noted) ymbol Parameter Test Conditions tatic Characteristics PM4354KP Min. Typ. Max. BV D Drain-ource Breakdown Voltage V G =V, I D =25µ 3 - - V I D Zero Gate Voltage Drain Current V D =24V, V G =V - - 1 T j =85 C - - 3 V G(th) Gate Threshold Voltage V D =V G, I D =25µ 1.3 1.8 2.5 V I G Gate Leakage Current V G =±2V, V D =V - - ± n R D(ON) a Drain-ource On-state Resistance Diode Characteristics V D a V G =V, I D =3-4.5 5.5 V G =4.5V,I D =2-6 8 Diode Forward Voltage I D =2, V G =V -.75 1.1 V t rr Reverse Recovery Time - 36 - ns I D =2, dl D /dt=/µs Qrr Reverse Recovery Charge - 29 - nc Gate Charge Characteristics b Q g Total Gate Charge - 63 88 Q gs Gate-ource Charge V D =15V, V G =V, I D =3 - - Gate-Drain Charge - 19 - Q gd Dynamic Characteristics b R G Gate Resistance V G =V,V D =V,F=1MHz - 1 - Ω C iss Input Capacitance V G =V, - 335 - C oss Output Capacitance V D =15V, - 425 - Reverse Transfer Capacitance Frequency=1.MHz - 33 - C rss t d(on) Turn-on Delay Time - 24 44 t r Turn-on Rise Time V DD =15V, R L =15Ω, - 23 42 I D =1, V GEN =V, t d(off) Turn-off Delay Time R G =6Ω - 73 132 Turn-off Fall Time - 27 5 t f Note a : Pulse test ; pulse width 3µs, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. Unit µ mω nc pf ns 3
Typical Operating Characteristics Power Dissipation Drain Current 6 8 5 7 6 Ptot - Power (W) 4 3 2 ID - Drain Current () 5 4 3 2 T C =25 o C 2 4 6 8 12 14 16 T C =25 o C,V G =V 2 4 6 8 12 14 16 Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) ID - Drain Current () afe Operation rea 4 1ms ms ms 1s DC 1 T C =25 o C.1.1 1 8 VD - Drain - ource Voltage (V) Rds(on) Limit Normalized Transient Thermal Resistance 2 1.1.1 Thermal Transient Impedance.1.2.5 ingle Pulse.1 Duty =.5.2 Mounted on 1in 2 pad R θj :5 o C/W 1E-3 1E-4 1E-3.1.1 1 quare Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-ource On Resistance 15 V G = 5,6,7,8,9,V 12 ID - Drain Current () 12 9 6 3 4.5V 4V 3.5V RD(ON) - On - Resistance (mω) 8 6 4 2 V G =4.5V V G =V 3V..5 1. 1.5 2. 2.5 3. VD - Drain-ource Voltage (V) 3 6 9 12 15 ID - Drain Current () Gate-ource On Resistance Gate Threshold Voltage 16 14 I D =3 1.6 1.4 I D =25µ RD(ON) - On - Resistance (mω) 12 8 6 4 2 Normalized Threshold Voltage 1.2 1..8.6.4.2 1 2 3 4 5 6 7 8 9 VG - Gate - ource Voltage (V). -5-25 25 5 75 125 15 Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-ource On Resistance ource-drain Diode Forward 1.8 1.6 V G = V I D = 3 2 Normalized On Resistance 1.4 1.2 1..8 I - ource Current () T j =15 o C T j =25 o C.6 R ON @T j =25 o C: 4.5mΩ.4-5 -25 25 5 75 125 15 Tj - Junction Temperature ( C) 1..3.6.9 1.2 1.5 1.8 VD - ource - Drain Voltage (V) C - Capacitance (pf) Capacitance 5 Frequency=1MHz 45 4 35 Ciss 3 25 2 15 5 Coss Crss 5 15 2 25 3 VD - Drain - ource Voltage (V) VG - Gate - source Voltage (V) 9 8 7 6 5 4 3 2 1 V D = 15V I D = 3 Gate Charge 2 3 4 5 6 7 QG - Gate Charge (nc) 6
valanche Test Circuit and Waveforms VD L tp VDX(U) DUT VD RG VDD I VDD tp IL.1W E tv witching Time Test Circuit and Waveforms VD RD DUT VD 9% RG VG VDD tp % VG td(on) tr td(off) tf 7
Package Information KPK E1 E G K F G1 H F1 D e B C Y M KPK B O L MIN. MX. MIN. 1. 1.2.39 MX..47 MILLIMETER INCHE B C.38.19.51.25.15.7.2. D 4.8 5..189.197 E 5.9 6..232.24 E1 5.7 5.8.224.228 e 1.27 BC.5 BC F F1.5.35.15.45.2.14.6.18 G.5.15.2.6 G1.35.45.14.18 H 3.49 3.69.137.145 K 1.6.63 8
Carrier Tape & Reel Dimensions OD P P2 P1 W F E1 B OD1 B T B K ECTION - ECTION B-B d H T1 pplication H T1 C d D W E1 F KPK 33. 2. 5 MIN. 12.4+2. -. 13.+.5 -.2 1.5 MIN. 2.2 MIN. 12..3 1.75. 5.5. P P1 P2 D D1 T B K 4.. 8.. 2.. 1.5+. -. 1.5 MIN..3.5 6.5. 5.3. 1.4. (mm) Devices Per Unit Package Type Unit Quantity KPK Tape & Reel 25 9
Taping Direction Information KPK UER DIRECTION OF FEED Reflow Condition (IR/Convection or VPR Reflow) T P Ramp-up tp Critical Zone T L to T P Temperature T L Tsmax Tsmin t L Ramp-down ts Preheat 25 t 25 C to Peak Time Reliability Test Program Test item Method Description OLDERBILITY MIL-TD-883D-23 245 C, 5 sec HOLT MIL-TD-883D-5.7 Hrs Bias @125 C PCT JED-22-B, 2 168 Hrs, %RH, 121 C TT MIL-TD-883D-11.9-65 C~15 C, 2 Cycles
Classification Reflow Profiles Profile Feature n-pb Eutectic ssembly Pb-Free ssembly verage ramp-up rate (T L to T P) 3 C/second max. 3 C/second max. Preheat C 15 C - Temperature Min (Tsmin) 15 C 2 C - Temperature Max (Tsmax) 6-12 seconds 6-18 seconds - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (t L) 183 C 6-15 seconds 217 C 6-15 seconds Peak/Classification Temperature (Tp) ee table 1 ee table 2 Time within 5 C of actual Peak Temperature (tp) -3 seconds 2-4 seconds Ramp-down Rate 6 C/second max. 6 C/second max. Time 25 C to Peak Temperature 6 minutes max. 8 minutes max. Note: ll temperatures refer to topside of the package. Measured on the body surface. Table 1. npb Eutectic Process Package Peak Reflow Temperatures Package Thickness Volume mm 3 Table 2. Pb-free Process Package Classification Reflow Temperatures Package Thickness Volume mm 3 <35 <35 Volume mm 3 35-2 Volume mm 3 Volume mm 3 >2 <1.6 mm 26 + C* 26 + C* 26 + C* 1.6 mm 2.5 mm 26 + C* 25 + C* 245 + C* 2.5 mm 25 + C* 245 + C* 245 + C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature + C. For example 26 C+ C) at the rated ML level. 35 <2.5 mm 24 +/-5 C 225 +/-5 C 2.5 mm 225 +/-5 C 225 +/-5 C Customer ervice npec Electronics Corp. Head Office : No.6, Dusing 1st Road, BIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642 Fax : 886-3-56425 Taipei Branch : 2F, No. 11, Lane 218, ec 2 Jhongsing Rd., indain City, Taipei County 23146, Taiwan Tel : 886-2-29-3838 Fax : 886-2-2917-3838 11