EMIPAK B PressFit Power Module -Levels Half Bridge Inverter Stage, 75 A VS-ETF75Y6U EMIPAK B (package example) PRIMARY CHARACTERISTICS Q - Q IGBT STAGE V CES 6 V V CE(on) typical at I C = 75 A.7 V I C at T C = 89 C 75 A Q - Q IGBT STAGE V CES 6 V V CE(on) typical at I C = 75 A.56 V I C at T C = C 75 A Speed 8 khz to khz Package EMIPAK B Circuit configuration -levels half bridge inverter stage FEATURES Trench IGBT technology FRED Pt clamping diodes PressFit pins technology Exposed Al O substrate with low thermal resistance Short circuit rated Square RBSOA Integrated thermistor Low internal inductances Low switching loss PressFit pins locking technology. Patent # US.6.8 B UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?999 DESCRIPTION VS-ETF75Y6U is an integrated solution for a multi level inverter stage in a single package. The EMIPAKB package is easy to use thanks to the PressFit pins and the exposed substrate provides improved thermal performance. The optimized layout also helps to minimize stray parameters, allowing for better EMI performance. Continuous collector current I C Continuous collector current I C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Operating junction temperature T J 75 Storage temperature range T Stg - to +5 C RMS isolation voltage V ISOL T J = 5 C, all terminals shorted, f = 5 Hz, t = s 5 V Q - Q IGBT Collector to emitter voltage V CES 6 Gate to emitter voltage V GES V Pulsed collector current I CM Clamped inductive load current I () LM A T C = 8 C 8 A T C = 5 C 9 T SINK = 8 C T Power dissipation P C = 5 C 9 D T C = 8 C 86 W Q - Q IGBT Collector to emitter voltage V CES 6 Gate to emitter voltage V GES V Pulsed collector current I CM 5 Clamped inductive load current I () LM 5 A T C = 8 C A T C = 5 C 5 T SINK = 8 C 5 Power dissipation P D T C = 5 C 5 W T C = 8 C 57 PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and International patents. Revision: 6-Oct-7 Document Number: 9685 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-ETF75Y6U ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS D5 - D6 CLAMPING DIODE Repetitive peak reverse voltage V RRM 6 V Single pulse forward current I FSM ms sine or 6 ms rectangular pulse, T J = 5 C 7 Diode continuous forward current I F T C = 8 C 55 T C = 5 C 78 A T SINK = 8 C 8 T Power dissipation P C = 5 C 7 D T C = 8 C W D - D - D - D AP DIODE Single pulse forward current I FSM ms sine or 6 ms rectangular pulse, T J = 5 C 5 Diode continuous forward current I F T C = 8 C 7 T C = 5 C 7 A T SINK = 8 C T Power dissipation P C = 5 C 7 D T C = 8 C 68 W Notes Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur () V CC = V, V GE = 5 V, L = 5 μh, R g =.7, T J = 75 C ELECTRICAL SPECIFICATIONS (T J = 5 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q - Q IGBT Collector to emitter breakdown voltage BV CES V GE = V, I C = μa 6 - - V V GE = 5 V, I C = 6 A -.57.8 Collector to emitter voltage V CE(on) V GE = 5 V, I C = 75 A -.7.9 V GE = 5 V, I C = 6 A, T J = 5 C -.7 - V V GE = 5 V, I C = 75 A, T J = 5 C -.86 - Gate threshold voltage V GE(th) V CE = V GE, I C =. ma.6 5.6 7. Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma (5 C to 5 C) - - - mv/ C Forward transconductance g fe V CE = V, I C = 75 A - 5 - S Transfer characteristics V GE V CE = V, I C = 75 A - 9.6 - V V GE = V, V CE = 6 V -.. Zero gate voltage collector current I CES V GE = V, V CE = 6 V, T J = 5 C -. - ma Gate to emitter leakage current I GES V GE = ± V, V CE = V - - ± na Q - Q IGBT Collector to emitter breakdown voltage BV CES V GE = V, I C = 5 μa 6 - - V V GE = 5 V, I C = 6 A -.5.6 Collector to emitter voltage V CE(on) V GE = 5 V, I C = 75 A -.56.7 V GE = 5 V, I C = 6 A, T J = 5 C -.5 - V V GE = 5 V, I C = 75 A, T J = 5 C -.67 - Gate threshold voltage V GE(th) V CE = V GE, I C = 5.6 ma.6 5. 7. Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C =. ma (5 C to 5 C) - -8 - mv/ C Forward transconductance g fe V CE = V, I C = 75 A - 7 - S Transfer characteristics V GE V CE = V, I C = 75 A - 8. - V V GE = V, V CE = 6 V -.5. Zero gate voltage collector current I CES V GE = V, V CE = 6 V, T J = 5 C -.65 - ma Gate to emitter leakage current I GES V GE = ± V, V CE = V - - ± na Revision: 6-Oct-7 Document Number: 9685 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-ETF75Y6U ELECTRICAL SPECIFICATIONS (T J = 5 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS D5 - D6 CLAMPING DIODE Cathode to anode blocking voltage V BR I R = μa 6 - - I F = A -.8.5 Forward voltage drop V FM I F = A, T J = 5 C -.5 - V R = 6 V -.. Reverse leakage current I RM V R = 6 V, T J = 5 C -.8 - D - D - D - D AP DIODE I F = A -.. Forward voltage drop V FM I F = A, T J = 5 C -.6 - V ma V SWITCHING CHARACTERISTICS (T J = 5 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q - Q IGBT (WITH D5 - D6 CLAMPING DIODE) Total gate charge (turn-on) Q g I C = 75 A - 5 - Gate to emitter charge (turn-on) Q ge V CC = V - - nc Gate to collector charge (turn-on) Q gc V GE = 5 V - 6 - Turn-on switching loss E on -.9 - Turn-off switching loss E off IC = 75 A -. - mj Total switching loss E tot V CC = V -. - Turn-on delay time t d(on) V GE = 5 V - 78 - Rise time t r R g =.7-7 - Turn-off delay time t d(off) L = 5 μh () - - ns Fall time t f - 65 - Turn-on switching loss E on -. - Turn-off switching loss E off I C = 75 A -.6 - mj V CC = V Total switching loss E tot -.7 - V GE = 5 V Turn-on delay time t d(on) - 78 - R g =.7 Rise time t r L = 5 μh - 7 - ns Turn-off delay time t d(off) T J = 5 C () - 6 - Fall time t f - 7 - Input capacitance C ies VGE = V - Output capacitance C oes V CC = V - 5 pf Reverse transfer capacitance C res f = MHz - Reverse bias safe operating area RBSOA T J = 75 C, I C = A,V CC = V, V P = 6 V, R g =.7, V GE = 5 V to V Fullsquare Short circuit safe operating area SCSOA R g =, V CC = V, V P = 6 V V GE = 5 V to - - 5 μs Q - Q IGBT (WITH FREEWHEELING EXTERNAL TO-7 DIODE DISCRETE ETH6) Total gate charge (turn-on) Q g I C = A - - Gate to emitter charge (turn-on) Q ge V CC = V - 69 - nc Gate to collector charge (turn-on) Q gc V GE = 5 V - 9 - Turn-on switching loss E on -.85 - Turn-off switching loss E off IC = 75 A -.5 - mj Total switching loss E tot V CC = V -.9 - Turn-on delay time t d(on) V GE = 5 V - - Rise time t r R g =.7-8 - Turn-off delay time t d(off) L = 5 μh () - - ns Fall time t f - 7 - Revision: 6-Oct-7 Document Number: 9685 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-ETF75Y6U SWITCHING CHARACTERISTICS (T J = 5 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Turn-on switching loss E on -. - Turn-off switching loss E off I C = 75 A -.8 - mj Total switching loss E V CC = V tot -.8 - V GE = 5 V Turn-on delay time t d(on) - - R g =.7 Rise time t r - 8 - L = 5 μh ns Turn-off delay time t d(off) T J = 5 C () - - Fall time t f - - Input capacitance C ies VGE = V - 775 - Output capacitance C oes V CC = V - 55 - pf Reverse transfer capacitance C res f = MHz - 5 - Reverse bias safe operating area RBSOA T J = 75 C, I C = 5 A, V CC = V, V P = 6 V, R g =.7, V GE = 5 V to V Fullsquare Short circuit safe operating area SCSOA R g =, V CC = V, V P = 6 V V GE = 5 V to - - 5 μs D5 - D6 CLAMPING DIODE Diode reverse recovery time t rr VR = V - 59 - ns Diode peak reverse current I rr I F = 5 A - 8.5 - A Diode recovery charge Q rr dl/dt = 5 A/μs - 57 - nc Diode reverse recovery time t rr VR = V - - ns Diode peak reverse current I rr I F = 5 A - 8.5 - A Diode recovery charge Q rr dl/dt = 5 A/μs, T J = 5 C - - nc D - D - D - D AP DIODE Diode reverse recovery time t rr VR = V - 8 - ns Diode peak reverse current I rr I F = 5 A - 9.5 - A Diode recovery charge Q rr dl/dt = 5 A/μs - 6 - nc Diode reverse recovery time t rr VR = V - 7 - ns Diode peak reverse current I rr I F = 5 A - - A Diode recovery charge Q rr dl/dt = 5 A/μs, T J = 5 C - 76 - nc Note () Energy losses include tail and diode reverse recovery INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS Resistance R5 T C = 5 C 5 R T C = C 9 ± 5 % B-value B 5/5 R = R 5 exp. [B 5/5 (/T - /(98.5 K))] 75 ± 5 % K Maximum operating temperature C Dissipation constant mw/ C Thermal time constant 8 s Revision: 6-Oct-7 Document Number: 9685 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-ETF75Y6U THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Q - Q IGBT - junction to case thermal resistance (per switch) - -.5 Q - Q IGBT - junction to case thermal resistance (per switch) - -.7 R thjc D5 - D6 clamping diode - junction to case thermal resistance (per diode) - -.86 D - D - D - D AP diode - junction to case thermal resistance (per diode) - -. Q - Q IGBT - case to sink thermal resistance (per switch) -.8 - C/W Q - Q IGBT - case to sink thermal resistance (per switch) -.8 - D5 - D6 clamping diode - case to sink thermal resistance (per diode) R () thcs -.6 - D - D - D - D AP diode - case to sink thermal resistance (per diode) -. - Case to sink thermal resistance per module -. - C/W Mounting torque (M) - Nm Weight - 5 - g Note () Mounting surface flat, smooth, and greased 5 5 5 9 75 6 5 5 T J = 5 C.5.5.5.5 V CE (V) T J = 5 C T J = 5 C T J = 75 C Fig. - Typical Q - Q Trench IGBT Output Characteristics V GE = 5 V Allowable Case Temperature ( C) 8 6 8 6 6 8 I C - Continuous Collector Current (A) Fig. - Maximum Q - Q Trench IGBT Continuous Collector Current vs. Case Temperature DC 5 5 5 9 75 6 5 5.5.5.5.5 V CE (V) V GE = 8 V V GE = 5 V V GE = V V GE = 9 V Fig. - Typical Q - Q Trench IGBT Output Characteristics T J = 5 C 8 V CE = V 7 6 5 T J = 5 C T J = 5 C 5 6 7 8 9 V GE (V) Fig. - Typical Q - Q Trench IGBT Transfer Characteristics Revision: 6-Oct-7 5 Document Number: 9685 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-ETF75Y6U 6.5 V GEth (V) 6 5.5 5.5 T J = 5 C T J = 5 C Switching time (ns) t doff t don t f.5 t r...6.8...6 5 6 7 8 I C (ma) Fig. 5 - Typical Q - Q Trench IGBT Gate Threshold Voltage Fig. 8 - Typical Q - Q Trench IGBT Switching Loss vs. I C (with D5 - D6 Clamping Diode) T J = 5 C, V CC = V, R g =.7, V GE = 5 V, L = 5 μh. T J = 75 C. I CES (ma)... T J = 5 C T J = 5 C T J = 5 C Energy (mj).8.6.. E off E on.. 5 6.8 5 5 5 5 5 5 V CES (V) R g (Ω) Fig. 6 - Typical Q - Q Trench IGBT Zero Gate Voltage Collector Current Fig. 9 - Typical Q - Q Trench IGBT Energy Loss vs. R g (with D5 - D6 Clamping Diode) T J = 5 C, V CC = V, I C = 75 A, V GE = 5 V, L = 5 μh.8.6 t don Energy (mj)...8.6. E off E on Switching time (ns) t doff t r t f. 5 6 7 8 5 5 5 5 5 5 R g (Ω) Fig. 7 - Typical Q - Q Trench IGBT Energy Loss vs. I C (with D5 - D6 Clamping Diode) T J = 5 C, V CC = V, R g =.7, V GE = 5 V, L = 5 μh Fig. - Typical Q - Q Trench IGBT Switching Time vs. R g (with D5 - D6 Clamping Diode) T J = 5 C, V CC = V, I C = 75 A, V GE = 5 V, L = 5 μh Revision: 6-Oct-7 6 Document Number: 9685 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-ETF75Y6U I F (A) 5 5 T J = 75 C 5 T J = 5 C 9 75 6 T J = 5 C 5 T J = 5 C 5.5.5.5.5 V FM (V) Fig. - Typical D5 - D6 Clamping Diode Forward Characteristics t rr (ns) 7 5 9 7 5 di F dt (A/μs) 5 C 5 C 5 Fig. - Typical D5 - D6 Clamping Diode Reverse Recovery Time vs. di F /dt, V rr = V, I F = 5 A Allowable Case Temperature ( C) 8 6 8 6 5 6 7 8 9 I F - Continuous Forward Current (A) Fig. - Maximum D5 - D6 Clamping Diode Forward Current vs. Case Temperature I RR (A) 8 6 8 6 5 di F dt (A/μs) 5 C 5 C Fig. 5 - Typical D5 - D6 Clamping Diode Reverse Recovery Current vs. di F /dt, V rr = V, I F = 5 A 75 C I RRM (A).. 5 C 5 C Q rr (nc) 8 6 5 C.. 5 C 5 C. 5 6 V R (V) Fig. - Typical D5 - D6 Clamping Diode Reverse Leakage Current 5 di F dt (A/μs) Fig. 6 - Typical D5 - D6 Clamping Diode Reverse Recovery Charge vs. di F /dt, V rr = V, I F = 5 A Revision: 6-Oct-7 7 Document Number: 9685 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-ETF75Y6U Z thjc - Thermal Impedance Junction to Case ( C/W)..5....5.. DC...... t - Rectangular Pulse Duration (s) Fig. 7 - Maximum Thermal Impedance Z thjc Characteristics (Q - Q Trench IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W)..5....5.. DC...... t - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance Z thjc Characteristics (D5 - D6 Clamping Diode) 5 5 5 9 75 6 T J = 5 C T J = 5 C T J = 5 C T J = 75 C 5 5 5 9 75 6 V GE = 8 V V GE = 5 V V GE = V V GE = 9 V 5 5 5 5.5.5.5.5.5.5 V CE (V) V CE (V) Fig. 9 - Typical Q - Q Trench IGBT Output Characteristics V GE = 5 V Fig. - Typical Q - Q Trench IGBT Output Characteristics T J = 5 C Revision: 6-Oct-7 8 Document Number: 9685 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-ETF75Y6U Allowable Case Temperature ( C) 8 6 8 6 DC 6 8 6 I C - Continuous Collector Current (A) Fig. - Maximum Q - Q Trench IGBT Continuous Collector Current vs. Case Temperature I CES (ma).... V CES (V) T J = 75 C T J = 5 C T J = 5 C T J = 5 C. 5 6 Fig. - Typical Q - Q Trench IGBT Zero Gate Voltage Collector Current I CE (A) 8 V CE = V 7 6 T J = 5 C 5 T J = 5 C 5 6 7 8 9 V GE (V) Fig. - Typical Q - Q Trench IGBT Transfer Characteristics 6.5 Energy (mj).8.6...8.6.. 5 6 7 8 Fig. 5 - Typical Q - Q Trench IGBT Energy Loss vs. I C (with Freewheeling External TO-7 Diode Discrete ETH6), T J = 5 C, V CC = V, R g =.7 V GE = 5 V, L = 5 μh E off E on 6 5.5 T J = 5 C t f V GEth (V) 5.5.5 T J = 5 C Switching Time (ns) t doff t don.5.5.5.5.5.5 5 5.5 6 I C (ma) Fig. - Typical Q - Q Trench IGBT Gate Threshold Voltage t r 5 6 7 8 Fig. 6 - Typical Q - Q Trench IGBT Switching Time vs. I C (with Freewheeling External TO-7 Diode Discrete ETH6), T J = 5 C, V CC = V, R g =.7 V GE = 5 V, L = 5 μh Revision: 6-Oct-7 9 Document Number: 9685 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-ETF75Y6U Energy (mj).8.6...8.6.. Eoff Eon.8 5 5 5 5 5 5 R g (Ω) Fig. 7 - Typical Q - Q Trench IGBT Energy Loss vs. R g (with Freewheeling External TO-7 Diode Discrete ETH6), T J = 5 C, V CC = V, I C = 75 A, V GE = 5 V, L = 5 μh Allowable Case Temperature ( C) 8 6 8 6 DC 5 6 7 8 I F - Continuous Forward Current (A) Fig. - Maximum D - D - D - D Antiparallel Diode Forward Current vs. Case Temperature t don 5 Switching Time (ns) t f t r t doff t rr (ns) 9 7 5 5 C 5 C 5 5 5 5 5 5 55 R g (Ω) Fig. 8 - Typical Q - Q Trench IGBT Switching Time vs. R g (with Freewheeling External TO-7 Diode Discrete ETH6), T J = 5 C, V CC = V, I C = 75 A, V GE = 5 V, L = 5 μh 9 5 di F dt (A/μs) Fig. - Typical D - D - D - D Antiparallel Diode Reverse Recovery Time vs. di F /dt V rr = V, I F = 5 A 5 5 5 5 C 5 5 I F (A) 9 75 6 5 5 T J = 5 C T J = 75 C T J = 5 C T J = 5 C I rr (A) 5 5 5 C..8..6. 5 V FM (V) di F /dt (A/us) Fig. 9 - Typical D - D - D - D Antiparallel Diode Forward Characteristics Fig. - Typical D - D - D - D Antiparallel Diode Reverse Recovery Current vs. di F /dt V rr = V, I F = 5 A Revision: 6-Oct-7 Document Number: 9685 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-ETF75Y6U 7 5 C Q rr (nc) 8 5 9 5 C 6 5 di F dt (A/μs) Fig. - Typical D - D - D - D Antiparallel Diode Reverse Recovery Charge vs. di F /dt V rr = V, I F = 5 A Z thjc - Thermal Impedance Junction to Case ( C/W)..5....5.. DC...... t - Rectangular Pulse Duration (s) Fig. - Maximum Thermal Impedance Z thjc Characteristics (Q - Q Trench IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W)..5....5.. DC...... t - Rectangular Pulse Duration (s) Fig. 5 - Maximum Thermal Impedance Z thjc Characteristics (D - D - D - D Antiparallel Diode) Revision: 6-Oct-7 Document Number: 9685 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-ETF75Y6U ORDERING INFORMATION TABLE Device code VS- ET F 75 Y 6 U 5 6 7 - product - Package indicator (ET = EMIPAK B) - Circuit configuration (F = -levels half bridge inverter stage) - Current rating (75 = 75 A) 5 - Switch die technology (Y = trench IGBT) 6 - Voltage rating (6 = 6 V) 7 - Diode die technology (U = ultrafast diode) CIRCUIT CONFIGURATION 5 6 Q D D5 7 8 9 Q Q Q D D D6 D Ntc Revision: 6-Oct-7 Document Number: 9685 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-ETF75Y6U PACKAGE.8.6.8.. 8 8.8 7.6..8.6 9 7 6.8 9.6 8 6 5 6.8 9.6. Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95559 Revision: 6-Oct-7 Document Number: 9685 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Outline Dimensions EMIPAK-B PressFit DIMENSIONS in millimeters ±.5 ±.5 Ø. ±. 56.8 ±. 5.7 ±.5 5 ±.5. 6.6. 6.8 ±. 5 ±.5.5 ±.5 7 ±.5 6. 6. 9.6 9.6.8.8 6 6.. ±..6 Pin position..6.8.8 8 8.... 7.6 7.6.8.8 Revision: 5-Jun- Document Number: 95559 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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