BYW77G-2 HIGH EFFICIENCY FAS RECOVERY DIODES MAIN PRODUC CHARACERISICS IF(AV) VRRM trr VF FEAURES AND BENEFIS 25 A 2 V 5 ns.85 V VERY SMALL CONDUCION LOSSES NEGLIGIBLE SWICHING LOSSES LOW FORWARD AND REVERSE RECOVERY IME HIGH SURGE CURREN CAPABILIY SMD PACKAGE DESCRIPION Single rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in D 2 PAK, this surface mount device is intended for use in high frequency inverters, free wheeling and polarity protection applications. ABSOLUE MAXIMUM RAINGS 1 & 3 4 Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 2 V IF(RMS) RMS forward current 5 A IF(AV) Average forward current c=125 C δ =.5 IFSM Surge non repetitive forward current tp=1ms sinusoidal 4 1 D 2 PAK (Plastic) 2 3 25 A 2 A IFRM Repetitive peak forward current tp = 5µs f = 5 khz 31 A stg j Storage and junction temperature range - 4 to + 15 C October 1999 - Ed:3A 1/5
BYW77G-2 HERMAL RESISANCE Symbol Parameter Value Unit Rth (j-c) Junction to case 1 C/W SAIC ELECRICAL CHARACERISICS Symbol Parameter est Conditions Min. yp. Max. Unit IR * Reverse leakage current VR = VRRM j = 25 C 25 µa j = 1 C 2.5 ma VF ** Forward voltage drop IF = 2 A j = 125 C.85 V Pulse test : * tp = 5 ms, δ < 2 % ** tp = 38 µs, δ < 2 % IF = 4 A j = 125 C 1. IF = 4 A j = 25 C 1.15 o evaluate the conduction losses use the following equation : P =.65 x IF(AV) +.75 IF 2 (RMS) RECOVERY CHARACERISICS Symbol Parameter est Conditions Min. yp. Max. Unit trr tfr VFP Reverse recovery time Forward recovery time Peak forward voltage j = 25 C IF =.5A Irr =.25 A IR = 1A j = 25 C dif/dt = -5A/µs IF = 1A VR = 3V j = 25 C IF = 1A dif/dt = 1A/µs VFR = 1.1 x VF max j = 25 C IF = 1A dif/dt = 1A/µs 1.5 35 ns PIN OU configuration in D 2 PAK: 1 5 ns V 2/5
BYW77G-2 Fig.1 : Average forward power dissipation versus average forward current. Fig.2 : Peak current versus form factor. P F(av)(W) 3. 27.5 =.1 =.2 =.5 =1 25. =.5 22.5 2. 17.5 15. 12.5 1. 7.5 5. 2.5 I F(av)(A) =tp/ tp. 5 1 15 2 25 3 Fig.3 : Forward voltage drop versus forward current (maximum values). 1.8 1.6 1.4 1.2 1..8.6.4.2 VFM(V) j=125 o C IFM(A)..1 1 1 1 3 Fig.5 : Non repetitive surge peak forward current versus overload duration..1.2.3.4.5.6.7.8.9 1 5 4 3 2 1.5.2 I M(A) P=2W P=3W K 1. Zth(j-c) (tp. ) K = Rth(j-c) =.2 =.1 =.5 Single pulse P=4W =tp/ Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. =tp/ tp.1 tp(s) 1.E-3 1.E-2 1.E-1 1.E+ Fig.6 : Average current versus ambient temperature. (δ =.5) I M(A) 3 25 2 15 c=25 o C c=75oc 1 IM c=125 C 5 t =.5 t(s).1.1.1 1 I F(av)(A) 3 25 2 15 1 5 Rth(j-a)=15 oc/w =.5 =tp/ amb( oc) 2 4 6 8 1 12 14 16 tp Rth(j-a)=Rth(j-c) tp I M 3/5
BYW77G-2 Fig.7 : Junction capacitance versus reverse voltage applied (ypical values). Fig.8 : Reverse recovery charges versus dif/dt. C(pF) 2 19 18 17 16 15 14 13 12 F=1MHz j=25oc 11 VR(V) 1 1 1 1 Fig.9 : Peak reverse current versus dif/dt. 3. 2.5 2. 1.5 1. IRM(A) 9%CONFIDENCE IF=IF(av) j=1 O C j=25 O C 2.5 dif/dt(a/µs). 1 2 1 1 8 QRR(nC) 1 1 1 7 6 5 4 3 2 1 9%CONFIDENCE IF=IF(av) j=1 O C j=25 O C dif/dt(a/µs) Fig.1 : Dynamic parameters versus junction temperature. QRR;IRM[j]/QRR;IRM[j=125oC] 1.5 1.25 1..75.5 IRM QRR.25 j( oc). 25 5 75 1 125 15 4/5
BYW77G-2 PACKAGE MECHANICAL DAA D 2 PAK (Plastic) L L2 L3 G B2 FOO PRIN (in millimeters) 1.3 E 8.9 B 16.9 A1 2. MIN. FLA ZONE 3.7 C2 C A2 1.3 A 5.8 R V2 Information furnished is believed to be accurate and reliable. However, SMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SMicroelectronics. Specifications mentioned in this publication are subject to change without notice. his publication supersedes and replaces all information previously supplied. SMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SMicroelectronics. he S logo is a registered trademark of SMicroelectronics 1999 SMicroelectronics - Printed in Italy - All rights reserved. SMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com D DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A 4.4 4.6.173.181 A1 2.49 2.69.98.16 A2.3.23.1.9 B.7.93.27.37 B2 1.14 1.7.45.67 C.45.6.17.24 C2 1.23 1.36.48.54 D 8.95 9.35.352.368 E 1. 1.4.393.49 G 4.88 5.28.192.28 L 15. 15.85.59.624 L2 1.27 1.4.5.55 L3 1.4 1.75.55.69 M 2.4 3.2.94.126 R.4 typ..16 typ. V2 8 8 5/5