N-Channel -V (D-S) 75 C MOSFET SUP/SUB85N- PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A).5 at V GS = V.2 at V GS = 4.5 V 85 a FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature Available RoHS* COMPLIANT TO-22AB TO-263 D DRAIN connected to TAB G G D S Top View SUP85N- G D S Top View SUB85N- S N-Channel MOSFET ORDERING INFORMATION Package Tin/Lead Plated Lead (Pb)-free TO-22AB SUP85N- SUP85N--E3 TO-263 SUB85N- SUB85N--E3 ABSOLUTE MAXIMUM RATINGS T A = 25 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 2 T Continuous Drain Current (T J = 5 C) C = 25 C 85 I a D T C = 25 C 6 a A Pulsed Drain Current M 24 Avalanche Current I AS 75 L =. mh Single Pulse Avalanche Energy b E AS 28 mj Maximum Power Dissipation b T C = 25 C (TO-22AB and TO-263) 25 P c D W T A = 25 C (TO-263) d 3.75 Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient PCB Mount (TO-263) d 4 R thja Free Air (TO-22AB) 62.5 C/W Junction-to-Case R thjc.6 Notes: a. Package limited. b. Duty cycle %. c. See SOA curve fo voltage derating. d. When mounted on " square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 74 S-68 Rev. D, 2-Jun-6
SUP/SUB85N- SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS = V, = 25 µa V Gate-Threshold Voltage V GS(th) V DS = V GS, = 25 µa 3 Gate-Body Leakage I GSS V DS = V, V GS = ± 2 V ± na Zero Gate Voltage Drain Current SS V DS = V, V GS = V, T J = 25 C 5 µa V DS = V, V GS = V V DS = V, V GS = V, T J = 75 C 25 On-State Drain Current a (on) V DS = 5 V, V GS = V 2 A V GS = V, = 3 A.85.5 Drain-Source On-State Resistance a r DS(on) V GS = 4.5 V, = 2 A..2 V GS = V, = 3 A, T J = 25 C.7 Ω V GS = V, = 3 A, T J = 75 C.22 Forward Transconductance a g fs V DS = 5 V, = 3 A 25 S Dynamic b Input Capacitance C iss 655 Output Capacitance C oss V GS = V, V DS = 25 V, f = MHz 665 pf Reverse Transfer Capacitance C rss 265 Total Gate Charge c Q g 5 6 Gate-Source Charge c Q gs V DS = 5 V, V GS = V, = 85 A 7 nc Gate-Drain Charge c Q gd 23 Turn-On Delay Time c t d(on) 2 25 Rise Time c t r V DD = 5 V, R L =.6 Ω 9 35 Turn-Off DelayTime c t d(off) 85 A, V GEN = V, R g = 2.5 Ω 55 85 ns Fall Time c t f 3 95 Source-Drain Diode Ratings and Characteristics (T C = 25 C) b Continuous Current I S 85 Pulsed Current I SM 24 A Forward Voltage a V SD I F = 85 A, V GS = V..5 V Reverse Recovery Time t rr 85 4 ns Peak Reverse Recovery Current I RM(REC) I F = 5 A, di/dt = A/µs 4.5 7 A Reverse Recovery Charge Q rr.7.35 µc Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Document Number: 74 S-68 Rev. D, 2-Jun-6
SUP/SUB85N- TYPICAL CHARACTERISTICS T A = 25 C, unless otherwise noted 25 V GS = thru 6 V 2 2 5 5 V 5 4 V 5 3 V 2 4 6 8 T C = 25 C 5 25 C - 55 C 2 3 4 5 6 V DS Drain-to-Source Voltage (V) Output Characteristics VGS Gate-to-Source Voltage (V) Transfer Characteristics 25.2 T C = - 55 C Transconductance (S ) g f s 2 5 5 25 C 25 C On-Resistance (Ω) r DS(on ).5..5 V GS = 4.5 V V GS = V 2 4 6 8 Drain Current (A) Transconductance. 2 4 6 8 2 Drain Current (A) On-Resistance vs. Drain Current 2 C Capacitance (pf ) 8 6 4 2 C rss C iss C oss Gate-to-Source Voltage (V ) V G S 6 2 8 4 V DS = 5 V = 85 A 5 3 45 6 75 V DS Drain-to-Source Voltage (V) Capacitance 5 5 2 Q g Total Gate Charge (nc) Gate Charge Document Number: 74 S-68 Rev. D, 2-Jun-6 3
SUP/SUB85N- TYPICAL CHARACTERISTICS T A = 25 C, unless otherwise noted 2.5 2. V GS = V = 3 A r D S(on ) On-Resistanc e (Normalized).5. Source Current (A ) T J = 5 C T J = 25 C.5 I S. - 5-25 25 5 75 25 5 75 T J Junction Temperature ( C) On-Resistance vs. Junction Temperature 4.3.6.9.2 VSD Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 3 = 25 µa (a) a v I AV (A) at T A = 5 C I AV (A) at T A = 25 C V (BR)DS S (V) 2...... t in (Sec) Avalanche Current vs. Time 9-5 - 25 25 5 75 25 5 75 T J Junction Temperature ( C) T J - Drain-Source Breakdown vs. Junction-Temperature 4 Document Number: 74 S-68 Rev. D, 2-Jun-6
SUP/SUB85N- THERMAL RATINGS 8 µs 6 4 2 *Limited by r DS(on) T C = 25 C Single Pulse µs ms ms ms dc 25 5 75 25 5 75 T C Ambient Temperature ( C) Maximum Avalanche and Drain Current vs. Case Temterature.. V DS Drain-to-Source Voltage (V) *V GS minimum V GS at which r DS(on) is specified Safe Operating Area 2 Duty Cycle =.5 N ormalized Effective Transien t Thermal Impedance..2..5.2 Single Pulse. -4-3 -2 - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?74. Document Number: 74 S-68 Rev. D, 2-Jun-6 5
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