IR Receiver Module for Ligh Barrier Sysems TSSP4..SSXB Vishay Semiconducors DESIGN SUPPORT TOOLS Models Available 3 MECHANICAL DATA Pinning: = OUT, = GND, 3 = V S 7 click logo o ge sared DESCRIPTION The TSSP4..SSXB are compac infrared deecor modules for presence sensing applicaions. They provide an acive low oupu in response o infrared burss a 94 nm. The TSSP4..SSXB are x less sensiive han he TSSP4.., for ease of use in reflecive applicaions a less han m range where high sensiiviy is no needed and can complicae he design. This componen has no been qualified o auomoive specificaions. FEATURES Consan gain for consisen resuls under any lighing condiion Up o m for presence sensing 94 nm peak wavelengh PIN diode and sensor IC in one package Low supply curren Shielding agains EMI Visible ligh is suppressed by IR filer Insensiive o supply volage ripple and noise Supply volage:.5 V o 5.5 V Maerial caegorizaion: for definiions of compliance please see www.vishay.com/doc?999 APPLICATIONS Reflecive sensors for hand dryers, owel or soap dispensers, waer fauces, oile flush Vending machine fall deecion Securiy and pe gaes Person or objec viciniy acivaion PARTS TABLE Carrier frequency Package Pinning Dimensions (mm) Mouning Applicaion 38 khz TSSP438SSXB 5 khz TSSP45SSXB Mold = OUT, = GND, 3 = V S. W x.95 H x 5. D Leaded Presence sensors BLOCK DIAGRAM PRESENCE SENSING 833_8 +3 V 3 IR emier Inpu AMP Band pass Demodulaor 33 kω V S OUT Envelope signal e.g. 38 khz +3 V PIN GND Ou o μc Rev..3, -Apr-8 Documen Number: 8737 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TSSP4..SSXB Vishay Semiconducors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Supply volage (pin 3) V S -.3 o +. V Supply curren (pin 3) I S 5 ma Oupu volage (pin ) V O -.3 o 5.5 V Volage a oupu o supply V S - V O -.3 o (V S +.3) V Oupu curren (pin ) I O 5 ma Juncion emperaure T j C Sorage emperaure range T sg -5 o +85 C Operaing emperaure range T amb -5 o +85 C Soldering emperaure s, mm from case T sd C Power consumpion T amb 85 C P o mw Noe Sresses beyond hose lised under Absolue Maximum Raings may cause permanen damage o he device. This is a sress raing only and funcional operaion of he device a hese or any oher condiions beyond hose indicaed in he operaional secions of his specificaion is no implied. Exposure o absolue maximum raing condiions for exended periods may affec he device reliabiliy ELECTRICAL AND OPTICAL CHARACTERISTICS (T amb = 5 C, unless oherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT E v =, V S = 5 V I SD.55.7.9 ma Supply curren (pin 3) E v = 4 klx, sunligh I SH -.8 - ma Supply volage V S.5-5.5 V Transmission disance Oupu volage low (pin ) Minimum irradiance Maximum irradiance Direciviy E v =, es signal see fig., IR diode TSAL, I F = 4 ma I OSL =.5 ma, E e = mw/m, es signal see fig. Pulse widh olerance: pi - 5/f < po < pi + /f, es signal see fig. pi - 5/f < po < pi + /f, es signal see fig. Angle of half ransmission disance d - 7 - m V OSL - - mv E e min. - 7 4 mw/m E e max. 5 - - W/m ϕ / - ± 45 - deg TYPICAL CHARACTERISTICS (T amb = 5 C, unless oherwise specified) E e V O V OH V OL Opical Tes Signal (IR diode TSAL, I F =.4 A, 3 pulses, f = f, = ms) pi * T * pi /f is recommended for opimal funcion Oupu Signal ) 7/f < d < 5/f ) pi - 5/f < po < pi + /f d ) po ) po - Oupu Pulse Widh (ms).4...8..4.. Oupu pulse widh λ = 95 nm, opical es signal, Fig. Inpu burs lengh Ee - Irradiance (mw/m ) Fig. - Oupu Acive Low Fig. - Pulse Lengh and Sensiiviy in Dark Ambien Rev..3, -Apr-8 Documen Number: 8737 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TSSP4..SSXB Vishay Semiconducors E e V O V OH Opical Tes Signal µs µs = ms Oupu Signal, (see Fig. 4) 94 834 E e min. - Sensiiviy (mw/m ) 8 4 8 4 V OL on off -3-3 5 7 9 T amb - Ambien Temperaure ( C) Fig. 3 - Oupu Funcion Fig. - Sensiiviy vs. Ambien Temperaure on, off - Oupu Pulse Widh (ms).8.7..5.4.3. on off. λ = 95 nm, opical es signal, Fig. E e - Irradiance (mw/m ) S (λ) rel - Relaive Specral Sensiiviy..9.8.7..5.4.3.. 75 8 85 9 95 5 5 45 λ- Wavelengh (nm) Fig. 4 - Oupu Pulse Diagram Fig. 7 - Relaive Specral Sensiiviy vs. Wavelengh E e min. /E e - Relaive Responsiviy...8..4 f = f ± 5 %. Δf(3 db) = f /..7.9..3 95 f/f - Relaive Frequency..9.8.7..4. d rel - Relaive Transmission Disance 3 4 5 7 8 Fig. 5 - Frequency Dependence of Responsiviy Fig. 8 - Horizonal Direciviy Rev..3, -Apr-8 3 Documen Number: 8737 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
E e min. - Sensiiviy (mw/m ) www.vishay.com 8 4 8 4.5.5 3.5 4.5 5.5 V S - Supply Volage (V) Fig. 9 - Sensiiviy vs. Supply Volage TSSP4..SSXB Vishay Semiconducors The ypical applicaion of his device is a reflecive or beam break sensor wih acive low deec or no deec informaion conained in is oupu. Applicaions requiring up o m beam break or.5 m reflecive range benefi from he lower gain of hese sensors because hey are less sensiive o sray signal from he emier, simplifying he mechanical design. Example for a sensor hardware: IR emier Separaion o avoid crossalk by sray ligh inside he housing IR deecor There should be no common window in fron of he emier and deecor in order o avoid crossalk via guided ligh hrough he window. PACKAGE DIMENSIONS in millimeers 3.9 3.5 ±.5 (5.55) 8.5.95 5.3.85 max..89 OUT GND V S.5 max..7 max..54 nom..3.54 nom. 4. 5. Marking area No indicaed olerances ±. Drawing-No.:.55-59.-4 Issue: 3; 7..8 3 R.5 echnical drawings according o DIN specificaions Rev..3, -Apr-8 4 Documen Number: 8737 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Legal Disclaimer Noice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Inerechnology, Inc., is affiliaes, agens, and employees, and all persons acing on is or heir behalf (collecively, Vishay ), disclaim any and all liabiliy for any errors, inaccuracies or incompleeness conained in any daashee or in any oher disclosure relaing o any produc. Vishay makes no warrany, represenaion or guaranee regarding he suiabiliy of he producs for any paricular purpose or he coninuing producion of any produc. To he maximum exen permied by applicable law, Vishay disclaims (i) any and all liabiliy arising ou of he applicaion or use of any produc, (ii) any and all liabiliy, including wihou limiaion special, consequenial or incidenal damages, and (iii) any and all implied warranies, including warranies of finess for paricular purpose, non-infringemen and merchanabiliy. Saemens regarding he suiabiliy of producs for cerain ypes of applicaions are based on Vishay s knowledge of ypical requiremens ha are ofen placed on Vishay producs in generic applicaions. Such saemens are no binding saemens abou he suiabiliy of producs for a paricular applicaion. I is he cusomer s responsibiliy o validae ha a paricular produc wih he properies described in he produc specificaion is suiable for use in a paricular applicaion. Parameers provided in daashees and / or specificaions may vary in differen applicaions and performance may vary over ime. All operaing parameers, including ypical parameers, mus be validaed for each cusomer applicaion by he cusomer s echnical expers. Produc specificaions do no expand or oherwise modify Vishay s erms and condiions of purchase, including bu no limied o he warrany expressed herein. Excep as expressly indicaed in wriing, Vishay producs are no designed for use in medical, life-saving, or life-susaining applicaions or for any oher applicaion in which he failure of he Vishay produc could resul in personal injury or deah. Cusomers using or selling Vishay producs no expressly indicaed for use in such applicaions do so a heir own risk. Please conac auhorized Vishay personnel o obain wrien erms and condiions regarding producs designed for such applicaions. No license, express or implied, by esoppel or oherwise, o any inellecual propery righs is graned by his documen or by any conduc of Vishay. Produc names and markings noed herein may be rademarks of heir respecive owners. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Documen Number: 9