HMC-C26 Features Typical Applications The HMC-C26 Wideband PA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Gain: 3 db @ 6 GHz PdB Output Power: +26 dbm @ 6 GHz Noise Figure: 2.5 db @ 8 GHz Spurious-Free Operation Regulated Supply and Bias Sequencing Hermetically Sealed Module Field Replaceable SMA connectors -55 C to +85 C Operating Temperature General Description The HMC-C26 is a GaAs MMIC phemt Distributed Power Amplifi er in a miniature, hermetic module with replaceable SMA connectors which operates between 2 and 2 GHz. The amplifi er provides 3 db of gain, 2.5 db noise fi gure, +3 dbm output IP3 and up to +26 dbm of output power at db gain compression. The wideband amplifi er I/Os are internally matched to 5 Ohms and are DC blocked making the HMC- C26 ideal for EW, ECM RADAR and test equipment applications. Integrated voltage regulators allow for fl exible biasing of both the negative and positive supply pins, while internal bias sequencing circuitry assures robust operation. Electrical Specifications, T A = +25 C, +Vdc = +V to +6V, -Vdc = -3V to -2V Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2-6 6-2 2-6 6-2 GHz Gain 28 3 26 29 24 27 9 22 db Gain Flatness ±.25 ±.75 ±. ±2. db Gain Variation Over Temperature.3.4.3.4.3.4.3.4 db/ C Noise Figure 3. 5. 2.5 3.5 3. 4. 3.5 5. db Input Return Loss 5 5 3 db Output Return Loss 5 5 8 db Output Power for db Compression (PdB) 23 26 22.5 25.5 2 24 8 2 dbm Saturated Output Power (Psat) 27.5 27 25 23 dbm Output Third Order Intercept (IP3) 33 3 27 24 dbm Positive Supply Current (+IDC) 4 45 4 45 4 45 4 45 ma Negative Supply Current (-IDC) 3.2 5 3.2 5 3.2 5 3.2 5 ma -
HMC-C26 Gain & Return Loss Gain vs. Temperature 35 38 RESPONSE (db) 25 5 5-5 -5 S2 S S22 GAIN (db) 34 3 26 22 8 4-25 4 8 2 6 2 24 6 3 6 9 2 5 8 2 Input Return Loss vs. Temperature Output Return Loss vs. Temperature RETURN LOSS (db) -5 - -5 RETURN LOSS (db) -5 - -5-2 -2-25 2 4 6 8 2 4 6 8 2 22-25 2 4 6 8 2 4 6 8 2 22 Reverse Isolation vs. Temperature Noise Figure vs. Temperature ISOLATION (db) - -2-3 -4-5 -6-7 NOISE FIGURE (db) 8 6 4 2-8 2 4 6 8 2 4 6 8 2 22 3 6 9 2 5 8 2-2
PdB vs. Temperature PdB (dbm) 3 28 26 24 22 2 8 6 4 2 2 4 6 8 2 4 6 8 2 22 Psat vs. Temperature Psat (dbm) 3 26 22 8 4 3 6 9 2 5 8 2 HMC-C26 Output IP3 vs. Temperature IP3 (dbm) 4 36 32 28 24 Absolute Maximum Ratings RF Input Power (RFIN) Positive Bias Supply Voltage (+Vdc) Negative Bias Supply (-Vdc) Thermal Resistance (at +Vdc = 2V, -Vdc = -4V, DC Power = 4.8 Watts) +23 dbm +7V Max -6V Min. 5.9 C/W Storage Temperature -65 to +5 C Operating Temperature -55 to +85 C 2 6 3 6 9 2 5 8 2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS - 3
Pin Descriptions HMC-C26 Pin Number Function Description Interface Schematic RFIN & RF Ground RF input connector, SMA female, fi eld replaceable. This pin is AC coupled and matched to 5 Ohms. 2 +Vdc Positive power supply voltage for the amplifi er. 3 RFOUT & RF Ground RF output connector, SMA female. This pin is AC coupled and matched to 5 Ohms. 4 -Vdc Negative power supply voltage for the amplifi er 5 GND Power supply ground. - 4
HMC-C26 Outline Drawing Package Information Package Type C-3B Package Weight [] 2 gms [2] Spacer Weight N/A [] Includes the connectors [2] ± gms Tolerance NOTES:. PACKAGE, LEADS, COVER MATERIAL: KOVAR 2. SPACER MATERIAL: ALUMINUM 3. PLATING: ELECTROLYTIC GOLD 5 MICROINCHES MIN., OVER ELECTROLYTIC NICKEL 75 MICROINCHES MIN. 4. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. TOLERANCES ±.5 [.3] UNLESS OTHERWISE SPECIFIED. 6. FIELD REPLACEABLE SMA CONNECTORS. TENSOLITE 562-5CCSF OR EQUIVALENT. 7. TO MOUNT MODULE TO SYSTEM PLATFORM REPLACE -8 HARDWARE WITH DESIRED MOUNTING SCREWS. - 5
Notes: HMC-C26-6