November 2017 GENERAL DESCRIPTION HI8200, HI8201, HI8202 Quad 10 Ohm /12V outsidetherails Analog Switch with Open Circuit when Power Off EATURES The HI8200 is a quad analog CMOS switch fabricated with SilicononInsulator (SOI) technology for latchup free operation and maximum switch isolation. High voltage gate drive is entirely created onchip enabling /12V switching range from a single 3.3V or 5V supply. These switches are ideally suited for applications demanding low switch leakage when the power pins are 0V. At 25 C and with VDD from 3.0V to 5.5V, the switch resistance (RON) is typically 8 RON is independent of VDD. In a switching range of 5V to 5V, the maximum deviation of RON from flat is less than 5%. These switches conduct equally well in either direction. Power down and Off state leakages are less than 10nA maximum. Charge injection is less than 10pC. Switching times are typically 180ns to the On state and 60ns to the Off state. The onboard charge pump allows an On/Off cycle time of 5KHz for all four switches simultaneously before the switching range becomes restricted. The HI8200 provides four each normally open switches when the switch control inputs are low. The HI8201 provides four each normally closed switches when the switch control inputs are low. The HI8202 provides a combination of two normally closed and two normally open switches. Industrystandard plastic package options include 20pin TSSOP, 16pin DIP and 16pin QN. Ceramic packaging is available on request. All three products are offered in both industrial (40 C to 85 C) and extended (55 C to 125 C) temperature range options. CMOS analog switches with up to /12V switching range from a single 3.3V or 5V supply Low RON: 10 max at 25 C Robust CMOS SilicononInsulator (SOI) technology Switch nodes are opencircuit when chip is powered down SOI switch isolation with 1nA typical Off leakage ESD protection > 4KV HBM ast switching time with breakbeforemake Low power Extended Temperature Range (55 C to 125 C) P CONIGURATIONS (Top Views) 1 1 S1A 2 3 S1B 4 5 6 S4B 7 8 S4A 9 4 10 HI8200PSx 20Pin TSSOP package 16 S1A 15 1 14 2 13 S2A 20 2 19 S2A 18 17 S2B 16 V 15 VLOGIC 14 S3B 13 12 S3A 11 3 APPLICATIONS S1B 1 2 3 S4B 4 12 S2B 11 V 10 VLOGIC 9 S3B Avionics Data bus isolation SampleandHold circuits Test Equipment Communications Systems S4A 5 4 6 3 7 S3A 8 HI8200PCx 16pin 5mm x 5mm Chipscale package (see page 6 for additional package configurations) PRODUCT OPTIONS PART TYPE 1 Switch 1 2 Switch 2 3 Switch 3 4 Switch 4 HI8200 0 Open 0 Open 0 Open 0 Open 1 Closed 1 Closed 1 Closed 1 Closed HI8201 0 Closed 0 Closed 0 Closed 0 Closed 1 Open 1 Open 1 Open 1 Open HI8202 0 Open 0 Closed 0 Closed 0 Open 1 Closed 1 Open 1 Open 1 Closed (DS8200 Rev. D) www.holtic.com 11/17
P DESCRIPTIONS SIGNAL UNCTION DESCRIPTION 1 Logic Input HI8200 and HI8202 are normally Open when input Low S1A Switch Node Switch 1 Node S1B Switch Node Switch 1 Node CAP Bulk storage capacitor. Add 0.1u ceramic capacitor to. (20V or higher). Supply Reference Ground S4B Switch Node Switch 4 Node S4A Switch Node Switch 4 Node 4 Logic Input HI8200 and HI8202 are normally Open when input Low 3 Logic Input HI8201 and HI8202 are normally Closed when input Low S3A Switch Node Switch 3 Node S3B Switch Node Switch 3 Node VLOGIC Supply 3.3V or 5.0V Logic supply V CAP Bulk storage capacitor. Add 0.1u ceramic capacitor to. (20V or higher). S2B Switch Node Switch 2 Node S2A Switch Node Switch 2 Node 2 Logic input HI8201 and HI8202 are normally Closed when input Low NOTE: V and pins are only to be used for connection of bulk storage capacitors and MUST NOT be loaded. 35 30 25 20 15 T = 125C T = 25C T = 55C 10 18V 12V 6V 0V 6V 12V 18V WITCH Typical RON as a function of WITCH and Temperature (10mA switch current, V SUPPLY = ) 2
ABSOLUTE MAXIMUM RATGS (Voltages referenced to = 0V) Supply Voltage, V LOGIC...7.0V Switch Current (either direction, DC) :...20mA Peak Switch Current (1 ms pulse, 10% duty cycle max.)...100ma Digital Input Voltage (14):...0.3V to V LOGIC 0.3V Operating Temperature Range: (Industrial)...40 C to 85 C (HiTemp)...55 C to 125 C Maximum Junction Temperature...175 C Continuous Power Dissipation (TA=70 C): SO Package (derate 6.7mW/ C above 70 C)...696mW Plastic DIP (derate 10.53 mw/ C above 70 C)...842mW Thin QN (derate 21.3mW/ C above 70 C)...1702mW Storage Temperature Range:...65 C to 150 C Soldering Temperature: (Ceramic)...60 sec. at 300 C (Plastic leads)...10 sec. at 280 C (Plastic body)...260 C Max. NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only. unctional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS V LOGIC = 3.3V or 5.0V, = 0V. Operating temperature range (unless otherwise noted). PARAMETER SYMBOL CONDITIONS IGURE M TYP MAX UNIT SWITCH PARAMETERS Switch Resistance, 25 C, 10mA RON 12V > Vs > 12V 1 6 8 10 Leakage (open circuit and power down) I SWLEAK 12V > Vs > 12V 2 1 10 na Leakage (open circuit and power on) ISWLEAKp 12V > Vs > 12V 2 1 100 na LOGIC PUTS Input High Voltage VIH 75% V Input Low Voltage VIL 25% V Input Current IIH 80K Ohm pulldown VLogic = 3.3V 45 µa Vlogic = 5.0V 65 µa IIL 0.5 µa SUPPLY VLogic Operating Range VDD 3.0 5.5 V VLogic Operating Current IDD inputs static VLogic = 3.3V Vlogic = 5.0V 1.0 2.5 ma ma DYNAMIC PARAMETERS Max Vin On/Off cycling fcycle any load 5 Khz Turn On Time TON 3 180 250 ns Turn Off time TO 3 80 150 ns BreakBeforeMake Time TD 4 40 80 ns Charge Injection Q V S=0V, R S=0 25 C 5 20 pc Off Isolation RR f = 1 MHz, 25 C 6 65 db Crosstalk CR f = 1 MHz, 25 C 7 90 db Capacitance CO CON Switch Off, 25 C Switch On, 25 C 8 9 15 60 p p Charge Pump Power On Tvon V and = /14.5V VLogic = 5.0V 10 10 ms 3
TEST CIRCUITS IDS V1 I S(O) I D(O) SA SB SA SB A A R ON = V 1/IDS VD igure 1 On Resistance igure 2 Off Leakage V (HI8201) 50% 50% SA SB V (HI8200) 50% 50% 35p 300 50% 90% t ON t O igure 3. Switching Times 1 2 S1A S2A S1B S2B 1 2 3.3V V 0V 1 50% 50% 50% 90% 35p 300 35p 300 90% 2 50% t D t D igure 4. BreakBeforeMake Time Delay (HI8202) 4
RS SA SB V CL 10n QJ = CL x igure 5. Charge Injection SA1 SB1 SA SB 50 1 SB2 SA2 2 NC 50 50 igure 6 Off Isolation igure 7 ChanneltoChannel Crosstalk Capacitance Meter f=1mhz SA SB Capacitance Meter f=1mhz SA SB igure 8 Off Capacitance igure 9 On Capacitance 5
15V 10V T=0 5V 0V 5V 10V 15V T=0 2ms 4ms 6ms 8ms 10ms Time igure 10. Charge Pump Power On Additional package configurations 1 1 S1A 2 S1B 3 4 5 S4B 6 S4A 7 4 8 16 2 15 S2A 14 S2B 13 V 12 VLOGIC 11 S3B 10 S3A 9 3 HI8200PDx 16Pin DIP package 6
REQUENCY RESPONSE igure 11 shows a typical frequency response. igure 11. requency Response. 7
ORDERG ORMATION HI 820x xx x x PART NUMBER Blank LEAD ISH Tin / Lead (Sn / Pb) Solder Pbfree, RoHS compliant PART NUMBER TEMPERATURE RANGE LOW BURN I 40 C TO 85 C I NO T 55 C TO 125 C T NO M 55 C TO 125 C M YES PART NUMBER PC PS PD PART NUMBER PACKAGE DESCRIPTION 16 P PLASTIC 5x5mmCHIP SCALE (16PCS1) (No Mflow, Pbfree only) 20 P PLASTIC TSSOP (20HS) 16 P PLASTIC DIP (16P) UNCTION 8200 QUAD SWITCH, NORMALLY OPEN 8201 QUAD SWITCH, NORMALLY CLOSED 8202 QUAD SWITCH, TWO NORMALLY OPEN, TWO NORMALLY CLOSED 8
REVISION HISTORY P/N Rev Date Description of Change DS8200 New 10/18/12 Initial Release A 10/22/12 Remove 1MOhm resistor to from test circuits. Correct typo in Pin Descriptions B 12/18/12 Clarify that V/ pins must not be loaded. Used only for connection of bulk storage caps. C 04/18/16 Add leakage spec for power on condition. D 11/07/17 Add frequency response curve. 9
HI8200 PACKAGE DIMENSIONS 20P PLASTIC TSSOP inches (millimeters) Package Type: 20HS.2555 ±.0035 (6.500 ±.100).006 ±.002 (.145 ±.055).252 ±.006 (6.400 ±.150) Pin 1.173 ±.004 (4.400 ±.100) See Detail A.0095 ±.0025 (.245 ±.055).036 ±.005 (.925 ±.125).026 (.650) BSC BSC = Basic Spacing between Centers is theoretical true position dimension and has no tolerance. (JEDEC Standard 95) 0 to 8.018.029 (.450.750).004 ±.002 (.100 ±.050) Detail A 16P PLASTIC CHIPSCALE PACKAGE millimeters Package Type: 16PCS1 Electrically isolated metal heat sink on bottom of package Connect to any ground or power plane for optimum thermal dissipation 3.38 ± 0.05 (0.133 ± 0.002) Top View 5.00 ± 0.05 (0.197 ± 0.002) Bottom View 3.38 ± 0.05 (0.133 ± 0.002) 5.00 ± 0.05 (0.197 ± 0.002).50 ± 0.05 (0.020 ± 0.002) 0.20 (0.008) min. 0.75 ± 0.05 (0.03 ± 0.002) 0.025 ± 0.025 (0.001 ± 0.001) 0.203 (0.008) 0.80 0.30 ± 0.05 (0.031) BSC ( 0.012 ± 0.002) RE. BSC = Basic Spacing between Centers is theoretical true position dimension and has no tolerance. (JEDEC Standard 95) 10
HI8200 PACKAGE DIMENSIONS 16P PLASTIC DIP Package Type: 16P 0.745 (18.923) 0.810 (20.574) 0.240 (6.096) 0.260 (6.604) 0.290 (7.366) 0.310 (7.874) 0.015 (0.381) 0.035 (0.889) 0.120 (3.048) 0.150 (3.810) 0.008 (0.203) 0.015 (0.381) 0.125 (3.175) 0.150 (3.810) 0.015 (0.381) 0.023 (0.584) 0.100 (2.54) BSC. 0.300 (7.620) 0.370 (9.398) 0.045 (1.143) 0.065 (1.651) inches (millimeters) 11