VS-GPTS6SFPbF Half Bridge IGBT INT-A-PAK, (Trench PT IGBT), A Proprietary Vishay IGBT Silicon L Series FEATURES Trench PT IGBT technology FRED Pt anti-parallel diodes with fast recovery Very low conduction losses Al 2 O 3 DBC UL pending Designed for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 INT-A-PAK PRIMARY CHARACTERISTICS V CES 6 V I C DC, T C = 3 C A V CE(on) at A, 25 C.6 V Speed DC to khz Package INT-A-PAK Circuit configuration Half bridge BENEFITS Optimized for high current inverter stages (AC TIG welding machines) Direct mounting to heatsink Very low junction to case thermal resistance Low EMI ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 6 V T C = 25 C 337 Continuous collector current I C T C = 8 C 235 A Pulsed collector current I CM 44 Peak switching current I LM 44 Gate to emitter voltage V GE ± 2 RMS isolation voltage V ISOL Any terminal to case, t = min 25 V T C = 25 C 78 Maximum power dissipation P D T C = C 32 W Operating junction temperature range T J -4 to +5 Storage temperature range T Stg -4 to +25 C ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 5 μa 6 - - Collector to emitter voltage V CE(on) V GE = 5 V, I C = 2 A -.37 - V V GE = 5 V, I C = A -.6.34 V GE = 5 V, I C = A, -.8 - Gate threshold voltage V GE(th) V CE = V GE, I C = 3.2 ma 4.9 5.8 8.8 Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = 3.2 ma, (25 C to 25 C) - -27 - mv/ C Forward transconductance g fe V CE = 2 V, I C = 5 A - 93 - S Transfer characteristics V GE V CE = 2 V, I C = A -.2 - V V GE = V, V CE = 6 V -. 5 Collector to emitter leakage current I CES V GE = V, V CE = 6 V, - 3 - μa I C = A, V GE = V -.36.96 Diode forward voltage drop V FM I C = A, V GE = V, -.7 - V Gate to emitter leakage current I GES V GE = ± 2 V - - ± 5 na Revision: 2-Sep-7 Document Number: 9572 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GPTS6SFPbF SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge Q g - 942 - I C = A, Gate to emitter charge Q ge - 295 - V CC = 4 V nc Gate to collector charge Q gc - 82 - Turn-on switching energy E on -. - Turn-off switching energy E off - 7.9 - mj I C = A, Total switching energy E ts V CC = 3 V, - 8.9 - Turn-on delay time t d(on) V GE = 5 V, L = 5 μh - 242 - Rise time t R g = 3.3, r - 66 - Turn-off delay time t d(off) - 453 - ns Fall time t f - 46 - Turn-on switching energy E on - 2. - Turn-off switching energy E off - 5.3 - mj I C = A, Total switching energy E ts V CC = 3 V, - 7.3 - Turn-on delay time t d(on) V GE = 5 V, L = 5 μh - 257 - Rise time t R g = 3.3, r - 68 - Turn-off delay time t d(off) - 76 - ns Fall time t f - 868 - Reverse bias safe operating area RBSOA T J = 5 C, I C = 44 A, V CC = 3 V, V p = 6 V, R g = 3.3, Fullsquare V GE = 5 V to V, L = 5 μh Diode reverse recovery time t rr IF = 5 A, - 5 - ns Diode peak reverse current I rr di F /dt = 2 A/μs, - - A Diode recovery charge Q rr V rr = 2 V - 638 - nc Diode reverse recovery time t rr IF = 5 A, - 2 - ns Diode peak reverse current I rr di F /dt = 2 A/μs, - 2.4 - A Diode recovery charge Q rr V rr = 2 V, - 225 - nc THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Operating junction temperature range T J -4-5 C Storage temperature range T Stg -4-25 per switch - -.6 Junction to case R thjc per diode - -.48 C/W Case to sink per module R thcs -. - case to heatsink - - 4 Mounting torque Nm case to terminal, 2, 3 - - 3 Weight - 85 - g Revision: 2-Sep-7 2 Document Number: 9572 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GPTS6SFPbF www.vishay.com 6 2 Allowable Case Temperature ( C) 4 2 8 6 4 2 DC 5 5 2 25 3 35 4 8 6 4 2 8 6 4 2 V GE = 2 V V GE = 5 V V GE = 8 V V GE = 9 V.2.4.6.8..2.4.6.8 I C - Continuous Collector Current (A) V CE (V) Fig. - Maximum IGBT Continuous Collector Current vs. Case Temperature Fig. 4 - Typical IGBT Output Characteristics,.6.5.4 2 A.3 V CE (V).2. A..9 5 A.8. V CE (V) Fig. 2 - IGBT Reverse BIAS SOA T J = 5 C, V GE = 5 V.7 2 4 6 8 2 4 6 T J ( C) Fig. 5 - Collector to Emitter Voltage vs. Junction Temperature 3 V CE = 2 V 25 8 2 6 5 5 T J = 5 C 4 2.3.6.9.2.5.8 2. 3 4 5 6 7 8 9 2 V CE (V) V GE (V) Fig. 3 - Typical IGBT Output Characteristics, V GE = 5 V Fig. 6 - Typical IGBT Transfer Characteristics Revision: 2-Sep-7 3 Document Number: 9572 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GPTS6SFPbF www.vishay.com V GE (V) 8. 6. 4. 2.. 8. 6. 4. 2. V CC = 4 V I C = A 2 4 6 8 2 Allowable Case Temperature ( C) 6 4 2 8 6 4 2 DC 2 4 6 8 2 4 6 Q g (nc) I F - Continuous Forward Current (A) Fig. 7 - Typical Total Gate Charge vs. Gate to Emitter Voltage Fig. - Maximum Diode Continuous Forward Current vs. Case Temperature 7.5 2 6.5 5.5 8 6 4 T J = 5 C V GEth (V) 4.5 3.5 I F (A) 2 8 2.5.5 6 4 2.5.5..5 2. 2.5 3. 3.5 4..2.4.6.8..2.4.6.8 I C (ma) V FM (V) Fig. 8 - Typical IGBT Gate Threshold Voltage Fig. - Typical Diode Forward Characteristics 25 T J = 5 C 2 I CES (ma).... Energy (mj) 5 5 Eoff Eon. 2 3 4 5 6 V CES (V) 2 4 6 8 2 4 6 Fig. 9 - Typical IGBT Zero Gate Voltage Collector Current Fig. 2 - Typical IGBT Energy Loss vs. I C, V CC = 3 V, R g = 3.3, V GE = 5 V, L = 5 μh Revision: 2-Sep-7 4 Document Number: 9572 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GPTS6SFPbF www.vishay.com 28 26 24 Switching Time (ns) t f t d(off) t d(on) t r t rr (ns) 22 2 8 6 4 2 8 2 4 6 8 2 4 6 6 2 3 4 5 di F /dt (A/μs) Fig. 3 - Typical IGBT Switching Time vs. I C, V CC = 3 V, R g = 3.3, V GE = 5 V, L = 5 μh Fig. 6 - Typical Diode Reverse Recovery Time vs. di F /dt V rr = 2 V, I F = 5 A 2 4 Energy (mj) 8 6 4 2 8 6 4 2 Eoff Eon I rr (A) 35 3 25 2 5 5 5 2 25 3 5 2 3 4 5 R g (Ω) di F /dt (A/μs) Fig. 4 - Typical IGBT Energy Loss vs. R g, V CC = 3 V, I C = A, V GE = 5 V, L = 5 μh Fig. 7 - Typical Diode Reverse Recovery Current vs. di F /dt V rr = 2 V, I F = 5 A 33 3 27 Switching Time (ns) t f t d(off) t d(on) t r Q rr (nc) 24 2 8 5 2 9 6 5 5 2 25 3 3 2 3 4 5 R g (Ω) di F /dt (A/μs) Fig. 5 - Typical IGBT Switching Time vs. R g, V CC = 3 V, I C = A, V GE = 5 V, L = 5 μh Fig. 8 - Typical Diode Reverse Recovery Charge vs. di F /dt) V rr = 2 V, I F = 5 A Revision: 2-Sep-7 5 Document Number: 9572 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GPTS6SFPbF Z thjc - Thermal Impedance Junction to Case ( C/W)..5..2..5.2. DC...... t - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Z thjc Characteristics - (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W)...5.2..5.2. DC...... t - Rectangular Pulse Duration (s) Fig. 2 - Maximum Thermal Impedance Z thjc Characteristics - (Diode)) ORDERING INFORMATION TABLE Device code VS- GP T S 6 S F PbF 2 3 4 5 6 7 8 9 - product 2 - IGBT die technology (GP = trench PT) 3 - Current rating ( = A) 4 - Circuit configuration (T = half bridge) 5 - Package indicator (S = INT-A-PAK) 6 - Voltage code (6 = 6 V) 7 - Speed/type (S = standard speed IGBT) 8 - Diode type 9 - None = standard production; PbF = Lead (Pb)-free Revision: 2-Sep-7 6 Document Number: 9572 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GPTS6SFPbF CIRCUIT CONFIGURATION 3 6 7 4 5 2 Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9573 Revision: 2-Sep-7 7 Document Number: 9572 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
DIMENSIONS in millimeters (inches) INT-A-PAK IGBT Outline Dimensions 4.3 7 (.67) 23 (.9) 23 (.9) (.56) 5 (.2) 35 (.38) 4.5 (.57) 2 3 5 4 7 6 3 (.8) 9 (.33) 28 (.) 29 (.5) 7 (.28) Ø 6.5 (Ø.25) 2.8 x.8 (. x.3) 8 (3.5) 3 screws M6 x 66 (2.6) 94 (3.7) 37 (.44) Revision: 27-Mar-3 Document Number: 9573 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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