FTD36N6N N-Channel MOSFET Pb Lead Free Package and Finish Applications: Automotive DC Motor Control DC-DC Converters and Off-Line UPS Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Ordering Information PART NUMBER PACKAGE BRAND FTD36N6N TO-252 IPS V DSS R DS(ON) (Typ.) I D 6V 28 m 25A G S TO-252 Not to Scale D G D S Absolute Maximum Ratings T C =25 o C unless otherwise specified Symbol Parameter Maximum Units V DSS Drain-to-Source Voltage (NOTE *1) 6 V I D Continuous Drain Current 25 I D @ o C Continuous Drain Current Fig-3 A I DM Pulsed Drain Current, @ V (NOTE *2) 8 Power Dissipation 5 W P D Derating Factor above 25 o C.33 W/ o C Gate-to-Source Voltage ± 2 V dv/dt Peak Diode Recovery dv/dt (NOTE *3) 5. V/ns T L T PKG T J and T STG Maximum Temperature for Soldering Leads at.63in (1.6mm) from Case for seconds Package Body for seconds Operating Junction and Storage Temperature Range 3 26 o C -55 to 175 Caution: Stresses greater than those listed in the Absolute Maximum Ratings Table may cause permanent damage to the device. Thermal Resistance Symbol Parameter Maximum Units Test Conditions R JC Junction-to-Case 3. R JA Junction-to-Ambient 1 o C/W Drain Lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +175 o C. 1 cubic foot chamber, free air. 215 InPower Semiconductor Co., Ltd. Page 1 of 9
OFF Characteristics TJ=25 o C unless otherwise specified BV DSS Drain-to-Source Breakdown Voltage 6 -- -- V =V, I D =25μA BV DSS / T J BreakdownVoltage Temperature Coefficient, Figure 11. --.5 -- V/ o C Reference to 25 o C, I D =25μA -- -- 1. V DS =6V, =V I DSS Drain-to-Source Leakage Current μa -- -- V 25 DS =48V, =V T J =15 o C Gate-to-Source Forward Leakage -- -- V I GS =+2V GSS na Gate-to-Source Reverse Leakage -- -- - = -2V ON Characteristics TJ=25 o C unless otherwise specified V -- 28 36 GS =V, I D =18A (NOTE *4) R DS(ON) Static Drain-to-Source On-Resistance m V -- 32 5 GS =4.5V, I D =12A (NOTE *4) (TH) Gate Threshold Voltage, Figure 12. 1. -- 3. V V DS =, I D =25uA gfs Forward Transconductance -- 17 -- S Dynamic Characteristics Essentially independent of operating temperature V DS =3V, I D =18A (NOTE *4) C iss Input Capacitance -- 1296 -- =V C oss Output Capacitance -- 117 -- V DS =25V pf f=1.mhz C rss Reverse Transfer Capacitance -- 87 -- Figure 14 Q g Total Gate Charge -- 13. -- VDD=3V Q gs Gate-to-Source Charge -- 6.8 -- nc I D=18A,VGS=4.5V Q gd Gate-to-Drain ( Miller ) Charge -- 4. -- Figure 15 Resistive Switching Characteristics Essentially independent of operating temperature t d(on) Turn-on Delay Time -- 8. -- =3V t rise Rise Time -- 19. -- I D =18A ns t d(off) Turn-Off Delay Time -- 34. -- =V t fall Fall Time -- 7. -- R G =3.3 215 InPower Semiconductor Co., Ltd. Page 2 of 9
Source-Drain Diode Characteristics Tc=25 o C unless otherwise specified I S Continuous Source Current (Body Diode) -- -- 25 A Integral pn-diode I SM Maximum Pulsed Current (Body Diode) -- -- 8 A in MOSFET V SD Diode Forward Voltage -- -- 1.2 V I S =25A, =V t rr Reverse Recovery Time -- 53 -- ns =V, =-3V Q rr Reverse Recovery Charge -- 86 -- nc I F =18A, di/dt= A/μs Notes: *1. T J = +25 o C to +175 o C. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. I SD = 18A di/dt < A/μs, < BV DSS, T J =+175 o C. *4. Pulse width < 38μs; duty cycle < 2%. 215 InPower Semiconductor Co., Ltd. Page 3 of 9
Z JC, Thermal Impedance (Normalized) 1....1.1 1E-6 Duty Factor 5% 2% % 5% 2% 1% single pulse Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case NOTES: DUTY FACTOR: D=t1/t2 PEAK T J =P DM x Z JC x R JC +T C E-6 E-6 1E-3 E-3 E-3 1E+ P DM t 1 t 2 E+ t p, Rectangular Pulse Duration (s) Figure 2. Maximum Power Dissipation Figure 3. vs Case Temperature Maximum Continuous Drain Current vs Case Temperature 5 3 P D, Power Dissipation (W) 4 3 2 I D, Drain Current (A) 25 2 15 5 25 5 75 125 15 175 25 5 75 125 15 175 T T C, Case Temperature ( o C, Case Temperature ( o C) C) Figure 4. Typical Output Characteristics Figure 5. Typical Drain-to-Source ON Resistance vs Gate Voltage and Drain Current I D, Drain Current (A) 9 75 6 45 3 15 VGS =15V VGS = V PULSE DURATION = μs DUTY FACTOR =.5% MAX, T C = 25 o C VGS = 8.V VGS = 7.V VGS = 6.V VGS = 5.5V VGS = 5.V RDS(ON), Drain-to-Source ON Resistance (.15.12.9.6.3 PULSE DURATION = μs DUTY FACTOR =.5% MAX T C = 25 o C I D = 5A I D = 25A I D = 12A I D = 6A 2 4 6 8 12 14 16 18 V DS, Drain-to-Source Voltage (V) VGS = 4.5V 2. 4 6 8 12 14 16, Gate-to-Source Voltage (V) 215 InPower Semiconductor Co., Ltd. Page 4 of 9
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION Figure 6. Maximum Peak Current Capability FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I DM, Peak Current (A) = -------------------- VGS = V E-6 E-6 1E-3 E-3 E-3 1E+ E+ t p, Pulse Width (s) Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive Switching Capability I D, Drain-to-Source Current (A) 6 5 4 3 2 PULSE DURATION = μs DUTY CYCLE =.5% MAX VDS = 3 V 2 3 4 +15 o C +25 o C -55 o C 5 6 7 8 9 I AS, Avalanche Current (A) STARTING T J = 25 o C STARTING T J = 15 o C If R= : t AV = (L I AS )/(1.3BV DSS - ) If R : t AV = (L/R) ln[i AS R)/(1.3BV DSS - )+1] R equals total Series resistance of Drain circuit 1 1E-6 E-6 E-6 1E-3 E-3, Gate-to-Source Voltage (V) t AV, Time in Avalanche (s) R DS(ON), Drain-to-Source ON Resistance ( ).9.6.3 Figure 9. Typical Drain-to-Source ON Figure. Resistance vs Drain Current PULSE DURATION = μs DUTY CYCLE =.5% MAX TC=25 C = V. 2 3 4 = 2V 5 6 R DS(ON), Drain-to-Source Resistance (Normalized) 2.5 2. 1.5 Typical Drain-to-Source ON Resistance vs Junction Temperature 1. PULSE DURATION = μs DUTY CYCLE =.5% MAX = V, I D = 18A.5-75 -5-25 25 5 75 125 15 175 I D, Drain Current (A) T J, Junction Temperature ( o C) 215 InPower Semiconductor Co., Ltd. Page 5 of 9
BV DSS, Drain-to-Source Breakdown Voltage (Normalized) 1.15 1. 1.5 1. Figure 11. Typical Breakdown Voltage vs Figure 12. Junction Temperature.7.95 = V.6 I D = 25 μa.9.5-75 -5-25 25 5 75 125 15 175-75 -5-25 25 5 75 125 15 175 (TH), Threshold Voltage (Normalized) 1.2 1.1 1..9.8 = V DS I D = 25 μa Typical Threshold Voltage vs Junction Temperature T J, Junction Temperature ( o C) T J, Junction Temperature ( o C) Figure 13. Maximum Forward Bias Safe Figure 14. Operating Area Typical Capacitance vs Drain-to-Source Voltage μs I D, Drain Current (A) μ 1ms ms 1. OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) = V, f = 1MHz C iss = C gs + C gd T J = MAX RATED C oss C ds + C gd T C = 25 o C Single Pulse C rss = C gd.1 1.1 1 DC C, Capacitance (pf) C iss C oss C rss V DS, Drain-to-Source Voltage (V) V DS, Drain Voltage (V), Gate-to-Source Voltage (V) 5 4 3 2 1 Figure 15. Typical Gate Charge Figure 16. vs Gate-to-Source Voltage V DS = 15V V DS = 3V V DS = 45V I D = 18A 5 2.2.4.6.8 I SD, Reverse Drain Current (A) 3 25 2 15 5 Typical Body Diode Transfer Characteristics +15 o C +25 o C 1. 1.2 = V 1.4 1.6 1.8 Q G, Total Gate Charge (nc) V SD, Source-to-Drain Voltage (V) 215 InPower Semiconductor Co., Ltd. Page 6 of 9
Test Circuits and Waveforms V DS I D I D V DS Miller Region D.U.T. (TH) 1 ma Q gs Q gd Q g Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform R L V DS 9% V DS R G D.U.T. % t d(on) t rise t d(off) t fall Figure 19. Resistive Switching Test Circuit Figure 2. Resistive Switching Waveforms 215 InPower Semiconductor Co., Ltd. Page 7 of 9
Test Circuits and Waveforms di/dt adj. Current Pump Double Pulse I D di/dt = A/μA D.U.T. Q rr L t rr I D Figure 22. Diode Reverse Recovery Waveform Figure 21. Diode Reverse Recovery Test Circuit BV DSS L Series Switch (MOSFET) I AS BV DSS D.U.T. Commutating Diode t AV 5 I AS t p I 2 AS L EAS 2 Figure 23. Unclamped Inductive Switching Test Circuit Figure 24. Unclamped Inductive Switching Waveforms 215 InPower Semiconductor Co., Ltd. Page 8 of 9
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