V DM = 5200 V I (AV)M = 1800 A I (RMS) = 2830 A I SM = 29 10 3 A V 0 = 1.02 V r = 0.32 mw Bi-Directional Control hyristor 5SB 17N5200 Doc. No. 5SYA1036-04 May 07 wo thyristors integrated into one wafer Patented free-floating silicon technology Designed for energy management and industrial applications Optimum power handling capability Interdigitated amplifying gate he electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated) Blocking Parameter Symbol Conditions 5SB 17N5200 Unit Max. surge peak forward blocking voltage Max repetitive peak forward blocking voltage V SM t p = 10 ms, f = 5 Hz vj = 5 125 C, Note 1 5200 V V RM f = 50 Hz, t p = 10 ms, t p1 = 250 µs, 5200 V vj = 5 125 C, Note 1 Max crest working forward voltages V WM 2600 V Critical rate of rise of offstate dv/dt crit Exp. to 2950 V, vj = 125 C 2000 V/µs voltage Max reverse leakage I RM V RM, vj = 125 C 400 ma Note 1: Voltage de-rating factor of 0.11% per C is applicable for vj below +5 C Note 2: Recommended minimum ratio of V DRM / V DWM or V RRM / V RWM = 2. See App. Note 5SYA 2051. Mechanical data Mounting force F M 81 90 108 kn Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 100 m/s 2 Weight m 2.9 kg Housing thickness H F M = 90 kn, a = 25 C 34.8 35.4 mm Surface creepage distance D S 53 mm Air strike distance D a 22 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur
5SB 17N5200 On-state Average on-state I (AV)M Half sine wave, c = 70 C 1800 A RMS on-state I (RMS) 2830 A RMS on-state I (RMS) Full sine wave, c = 70 C 4000 A Peak non-repetitive surge Limiting load integral Peak non-repetitive surge I SM t p = 10 ms, vj = 125 C, sine wave 29.0 10 3 A after surge: V D = V R = 0 V I 2 t 4.21 10 6 A 2 s I SM t p = 8.3 ms, vj = 125 C, sine wave 31.0 10 3 A after surge: V D = V R = 0 V Limiting load integral I 2 t 3.99 10 6 A 2 s On-state voltage V I = 2000 A, vj = 125 C 1.68 V hreshold voltage V 0 I = 1000 A - 3000 A, vj = 125 C 1.02 V Slope resistance r 0.32 mω Holding I H vj = 25 C 50 250 ma vj = 125 C 150 ma Latching I L vj = 25 C 500 ma vj = 125 C 300 ma Switching Critical rate of rise of onstate Critical rate of rise of onstate Circuit commutated turn-off time di/dt crit di/dt crit vj = 125 C, I RM = 3000 A, V D 2950 V, I FG = 2 A, t r = 0.5 µs Cont. f = 50 Hz Cont. t q vj = 125 C, I RM = 2000 A, V R = 200 V, di /dt = -1.5 A/µs, V D 0.67 V RM, dv D /dt = 20 V/µs, f = 1Hz 250 A/µs 500 A/µs 700 µs Critical rate of rise of dv/dt com vj = 125 C, V R 0.67 V RM 500 V/µs commutating voltage Reverse recovery charge Q rr vj = 125 C, I RM = 2000 A, 3500 6500 µas Reverse recovery V R = 200 V, di /dt = -1.5 A/µs 65 90 A I RM Gate turn-on delay time t gd vj = 25 C, V D = 0.4 V RM, I FG = 2 A, t r = 0.5 µs 3 µs Doc. No. 5SYA1036-04 May 07 page 2 of 7
5SB 17N5200 riggering Peak forward gate voltage V FGM 12 V Max. rated peak forward gate I FGM 10 A Peak reverse gate voltage V RGM 10 V Max. rated gate power loss P G For DC gate 3 W Max. rated peak forward P GM(AV) see Fig. 9 W gate power Gate trigger voltage V G vj = 25 C 2.6 V Gate trigger I G vj = 25 C 400 ma Gate non-trigger voltage V GD V D = 0.4 x V RM, vj = 125 C 0.3 V Gate non-trigger I GD V D = 0.4 x V RM 10 ma hermal Operating junction temperature range vj 125 C Storage temperature range stg -40 140 C hermal resistance junction to case (Valid for one thyristor half no heat flow to the second half.) hermal resistance case to heatsink R th(j-c) R th(j-c) R th(c-h) R th(c-h) Double-side cooled Single-side cooled Double-side cooled Single-side cooled 11.4 K/kW 22.8 K/kW 2 K/kW 4 K/kW Analytical function for transient thermal impedance: Z th(j-c) (t) = n i= 1 R (1- e i -t/ i 1 2 3 4 R i (K/kW) 6.770 2.510 1.340 0.780 τ i (s) 0.8651 0.1558 0.0212 0.0075 τ i ) Fig. 1 ransient thermal impedance (junction-tocase) vs. time Doc. No. 5SYA1036-04 May 07 page 3 of 7
5SB 17N5200 On-state characteristic model: V = A + B I + C ln( I + 1) + D max Valid for i = 500 4000 A A B C D I 1.309 80.0 10-6 -125.0 10-3 26.0 10-3 Fig. 2 On-state characteristics, j = 125 C, 10ms half sine Fig. 3 On-state voltage characteristics case ( C) 130 125 120 115 110 Double-sided cooling DC 180 rectangular 180 sine 120 rectangular 105 100 95 90 85 Fig. 4 On-state power dissipation vs. mean on-state. urn-on losses excluded. 80 75 70 0 500 1000 1500 2000 2500 3000 I AV (A) Fig. 5 Max. permissible case temperature vs. mean on-state. Switching losses ignored. 5SB 17N5200 Doc. No. 5SYA1036-04 May 07 page 4 of 7
5SB 17N5200 Fig. 6 Surge on-state vs. pulse length. Half-sine wave. Fig. 7 Surge on-state vs. number of pulses. Half-sine wave, 10 ms, 50Hz. I G (t) 100 % 90 % I GM I GM 2..5 A I Gon 1.5 I G di G /dt 2 A/µs t r 1 µs t p (I GM ) 5...20 µs di G /dt I Gon 10 % t r tp (IGM ) t p (I Gon ) t Fig. 8 Recommended gate waveform Fig. 9 Max. peak gate power loss Fig. 10 Reverse recovery charge vs. decay rate of on-state Fig. 11 Peak reverse recovery vs. decay rate of on-state Doc. No. 5SYA1036-04 May 07 page 5 of 7
urn-on and urn-off losses 5SB 17N5200 Fig. 12 urn-on energy, half sinusoidal waves Fig. 13 urn-on energy, rectangular waves Fig. 14 urn-off energy, half sinusoidal waves Fig. 15 urn-off energy, rectangular waves -di /dt I (t) I (t), V(t) otal power loss for repetitive waveforms: P O where = P + W on f + W off f Q rr -I RM V(t) t -V 0 P = 1 I V 0 ( I ) dt dv/dt com -V RM Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss Doc. No. 5SYA1036-04 May 07 page 6 of 7
5SB 17N5200 g g Fig. 18 Device Outline Drawing Related documents: 5SYA 2020 Design of RC-Snubber for Phase Control Applications 5SYA 2049 Voltage definitions for phase control thyristors and diodes 5SYA 2051 Voltage ratings of high power semiconductors 5SYA 2034 Gate-Drive Recommendations for PC's 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors 5SZK 9104 5SZK 9105 Specification of environmental class for pressure contact diodes, PCs and GO, SORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCs and GO, RANSPORAION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for version of documents. ABB Switzerland Ltd Doc. No. 5SYA1036-04 May 07 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland elephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abb.com/semiconductors