BFP NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to GHz Noise figure F =. db at. GHz outstanding G ms = db at. GHz Transition frequency f T = 5 GHz Gold metallization for high reliability SIEGET 5 GHz ft - Line ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP AMs =B =E =C =E - - SOT Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage T A > C T A C V CEO V.5. Collector-emitter voltage V CES 5 Collector-base voltage V CBO 5 Emitter-base voltage V EBO.5 Collector current I C 5 ma Base current I B Total power dissipation ) P tot mw T S 7 C Junction temperature T j 5 C Ambient temperature T A -5... 5 Storage temperature T stg -5... 5 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point ) R thjs K/W TS is measured on the collector lead at the soldering point to the pcb For calculation of RthJA please refer to Application Note Thermal Resistance --
BFP Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V (BR)CEO.5 5 - V I C = ma, I B = Collector-emitter cutoff current I CES - - µa V CE = 5 V, V BE = Collector-base cutoff current I CBO - - na V CB = 5 V, I E = Emitter-base cutoff current I EBO - - µa V EB =.5 V, I C = DC current gain I C = ma, V CE = V, pulse measured h FE 95 - --
BFP Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 5 - GHz I C = ma, V CE = V, f = GHz Collector-base capacitance V CB = V, f = MHz, V BE =, emitter grounded C cb -.5. pf Collector emitter capacitance V CE = V, f = MHz, V BE =, base grounded Emitter-base capacitance V EB =.5 V, f = MHz, V CB =, collector grounded C ce -.7 - C eb -.55 - Noise figure F -. - db I C = 5 ma, V CE = V, f =. GHz, Z S = Z Sopt Power gain, maximum stable ) I C = ma, V CE = V, Z S = Z Sopt, Z L = Z Lopt, f =. GHz G ms - - db Insertion power gain V CE = V, I C = ma, f =. GHz, Z S = Z L = 5 Ω Third order intercept point at output ) V CE = V, I C = ma, f =. GHz, Z S = Z L = 5 Ω db Compression point at output I C = ma, V CE = V, Z S = Z L = 5 Ω, f =. GHz S 7 - IP - - dbm P -db - - Gms = S / S IP value depends on termination of all intermodulation frequency components. Termination used for this measurement is 5Ω from. MHz to GHz --
BFP SPICE Parameter (Gummel-Poon Model, Berkley-SPICE G. Syntax): Transitor Chip Data: IS =.5 fa VAF =. V NE =.5 - VAR = 9.75 V NC =.7 - RBM =.9 Ω CJE =. ff TF =.7 ps ITF = ma VJC =.9 V TR =.9 ns MJS = - XTI = - BF = 7.5 - IKF =.7 A BR = 7.7 - IKR =.9 ma RB =.5757 Ω RE =. - VJE =.5 V XTF =.99 - PTF = deg MJC =. - CJS = ff XTB = - FC =.7 NF =. - ISE = 9.9 fa NR =.5 - ISC =.97 fa IRB =.79 ma RC =.5 Ω MJE =.57 - VTF =.79 V CJC =.5 ff XCJC =. - VJS =.75 V EG =. ev TNOM K C`-E`-dioden Data (Berkley-Spice G. Syntax): IS =.5 fa; N =. -, RS = Ω All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: B L BO L BI C BE B' C CB Transistor Chip E' L EI C' L CI C'-E'- Diode L CO C CE C L BI =.7 nh L BO =.5 nh L EI =. nh L EO =.5 nh L CI =.5 nh L CO =.5 nh C BE = ff C CB =.9 ff C CE = ff Valid up to GHz L EO E EHA79 The SOT package has two emitter leads. To avoid high complexity to the package equivalent circuit both leads are combined in one electrical connection Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes --
BFP For non-linear simulation: Use transistor chip parameters in Berkeley SPICE G. syntax for all simulators. If you need simulation of the reverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. Simulation of package is not necessary for frequencies < MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. B C E E EHA77 Transistor Schematic Diagram The common emitter configuration shows the following advantages: Higher gain because of lower emitter inductance. Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. Common Emitter S- and Noise-parameter For detailed S- and Noise-parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies Application Notes CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 5 --
BFP Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) mw K/W Ptot RthJS.5...5...5 D = C 5 T S Permissible Pulse Load P totmax /P totdc = ƒ(t p ) -7 - -5 - - - s Collector-base capacitance C cb = ƒ(v CB ) f = MHz t p. Ptotmax/PtotDC - D =.5...5...5 Ccb pf..5..5-7 - -5 - - - s t p V V CB --
BFP Transition frequency f T = ƒ(i C ) f = GHz V CE = parameter in V Power gain G ma, G ms, S ² = ƒ (f) V CE = V, I C = ma GHz to.5.75 G ms ft.5 G [db] G ma S 5 5 5 ma I C Power gain G ma, G ms = ƒ (I C ) V CE = V f = parameter in GHz db.9 5 f [GHz] Power gain G ma, G ms = ƒ (V CE ) I C = ma f = parameter in GHz db.9 G.. 5 G.. 5 ma I C.5.5.5.5 V.5 V CE -- 7
BFP Noise figure F = ƒ(i C ) V CE = V, Z S = Z Sopt Noise figure F = ƒ(i C ) V CE = V, f =. GHz db db F.5 F.5.5.5 f = GHz f = 5 GHz f = GHz f = GHz f =. GHz f =. GHz f =.9 GHz.5 ZS = 5 Ohm ZS = ZSopt ma I C ma I C Noise figure F = ƒ(f) V CE = V, Z S = Z Sopt db Source impedance for min. noise figure vs. frequency V CE = V, I C = 5 ma / ma +j5 +j5 +j F +j.ghz.ghz.5 GHz 5 5.9GHz.5GHz GHz IC = ma IC = 5 ma -j 5GHz GHz.5 -j5 -j -j5 GHz f --
Package SOT BFP Package Outline ±... MAX...9 ±. A. +. -.5 x. M.5 +.. -.5. ±.. MIN.. M Foot Print. Marking Layout (Example) 5, June Date code (YM) BGA Type code Standard Packing Reel ø mm =. Pieces/Reel Reel ø mm =. Pieces/Reel.... A.5 +. -.5.5 ±..5.9 Manufacturer Pin Pin.5. -- 9
BFP Edition -- Published by Infineon Technologies AG 7 München, Germany Infineon Technologies AG. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. --