Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb Free Devices MAXIMUM RATINGS Rating Symbol Value Unit Q (T A = unless otherwise noted, common for Q and Q 2 ) Collector-Base Voltage V CBO 5 Vdc Collector-Emitter Voltage V CEO 5 Vdc Collector Current I C madc Electrostatic Discharge ESD HBM Class MM Class B Q 2 (T A = ) Collector-Emitter Voltage V CEO 2 Vdc Collector-Base Voltage V CBO 5 Vdc Emitter-Base Voltage V EBO. Vdc Collector Current Peak Collector Current Continuous I C. (Note ).5 Adc Electrostatic Discharge ESD HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T A = Derate above Thermal Resistance, Junction-to-Ambient P D 357 (Note 2) 2.9 (Note 2) mw mw/ C R JA 35 (Note 2) C/W Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation T A = Derate above Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range P D 5 (Note 2) 4. (Note 2) mw mw/ C R JA 25 (Note 2) C/W T J, T stg 55 to +5 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. Single pulse. ms. 2. FR 4 @ Minimum Pad. SOT 53 CASE 43A PLASTIC MARKING DIAGRAM UY = Specific Device Code M = Date Code = Pb Free Package (Note: Microdot may be in either location) Device Package Shipping EMF5XVT5 EMF5XVT5G (3) Q ORDERING INFORMATION SOT 53 (Pb Free) (2) () Q 2 R 2 R (4) (5) () 8/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Preferred devices are recommended choices for future use and best overall value. UY M SOT 53 (Pb Free) 8/Tape & Reel Semiconductor Components Industries, LLC, 25 November, 25 Rev. 2 Publication Order Number: EMF5XVT5/D
ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted, common for Q and Q 2 ) Characteristic Symbol Min Typ Max Unit Q OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = 5 V, I E = ) I CBO nadc Collector-Emitter Cutoff Current (V CE = 5 V, I B = ) I CEO 5 nadc Emitter-Base Cutoff Current (V EB =. V, I C = ) I EBO. madc Collector-Base Breakdown Voltage (I C = A, I E = ) V (BR)CBO 5 Vdc Collector-Emitter Breakdown Voltage (Note 3) (I C = 2. ma, I B = ) V (BR)CEO 5 Vdc ON CHARACTERISTICS (Note 3) DC Current Gain (V CE = V, I C = 5. ma) h FE 8 4 Collector-Emitter Saturation Voltage (I C = ma, I B =.3 ma) V CE(sat).25 Vdc Output Voltage (on) (V CC = 5. V, V B = 3.5 V, R L =. k ) V OL.2 Vdc Output Voltage (off) (V CC = 5. V, V B =.5 V, R L =. k ) V OH 4.9 Vdc Input Resistor R 32.9 47. k Resistor Ratio R/R2.8..2 Q 2 OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I C = madc, I B = ) V (BR)CEO 2 Vdc Collector Base Breakdown Voltage (I C =. madc, I E = ) V (BR)CBO 5 Vdc Emitter Base Breakdown Voltage (I E =. madc, I C = ) V (BR)EBO. Vdc Collector Cutoff Current (V CB = 5 Vdc, I E = ) I CBO. Adc Emitter Cutoff Current (V EB =. Vdc) I EBO. Adc ON CHARACTERISTICS DC Current Gain (Note 4) (I C = ma, V CE = 2. V) h FE 27 8 Collector Emitter Saturation Voltage (Note 4) (I C = 2 ma, I B = ma) V CE(sat) 25 mv Base Emitter Saturation Voltage (Note 4) (I C = 5 ma, I B = 2 ma) V BE(sat).8.9 V Base Emitter Turn on Voltage (Note 4) (I C = 5 ma, V CE = 3. V) V BE(on).8.875 V Input Capacitance (V EB = V, f =. MHz) C ibo 52 pf Output Capacitance (V CB = V, f =. MHz) C obo 3 pf Turn On Time (I BI = 5 ma, I C = 5 ma, R L = 3. ) t on 5 ns Turn Off Time (I B = I B2 = 5 ma, I C = 5 ma, R L = 3. ) t off 8 ns 3. Pulse Test: Pulse Width < 3 s, Duty Cycle < 2.%. 4. Pulsed Condition: Pulse Width = 3 sec, Duty Cycle 2%. 3 P D, POWER DISSIPATION (mw) 25 2 5 5 R JA = 833 C/W 5 5 5 T A, AMBIENT TEMPERATURE ( C) Figure. Derating Curve 2
TYPICAL ELECTRICAL CHARACTERISTICS FOR Q V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS Cob, CAPACITANCE (pf)..8..4.2 I C /I B = T A = Figure 2. V CE(sat) versus I C 2 3 4 V R, REVERSE BIAS VOLTAGE (VOLTS) 75 C. 2 4 5 I C, COLLECTOR CURRENT (ma) f = MHz I E = V T A = 5 I C, COLLECTOR CURRENT (ma) h FE, DC CURRENT GAIN (NORMALIZED) I C, COLLECTOR CURRENT (ma).. 75 C Figure 3. DC Current Gain T A = V O = 5 V V CE = V T A = 75 C. 2 4 8 V in, INPUT VOLTAGE (VOLTS) Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage V O =.2 V Vin, INPUT VOLTAGE (VOLTS) T A = 75 C. 2 3 4 5 I C, COLLECTOR CURRENT (ma) Figure. Input Voltage versus Output Current 3
TYPICAL ELECTRICAL CHARACTERISTICS FOR Q2.... I C /I B = 2 5.. T A =. I C /I B = T A =.... Figure 7. Collector Emitter Saturation Voltage vs. Collector Current Figure 8. Collector Emitter Saturation Voltage vs. Collector Current h FE, DC CURRENT GAIN 5 4 3 2 T A = V CE =. V. I C /I B = 5 T A =....... Figure 9. DC Current Gain Figure. Collector Emitter Saturation Voltage vs. Collector Current.9.8.7..5.4.3.2. 5. ma. 5 ma ma 25 ma ma 5 ma I C =. A.... I B, BASE CURRENT (AMPS) T A = V BE(sat), BASE EMITTER.2.8..4.2 T A =... Figure. Collector Emitter Saturation Voltage vs Base Current Figure 2. Base Emitter Saturation Voltage vs. Collector Current 4
V BE(on), BASE EMITTER TURN ON VOLTAGE (V).2.8..4.2. V CE = 3. V. T A =. C ibo, INPUT CAPACITANCE 55 5 45 4 35 3 25 2 2 3 V EB, EMITTER BASE VOLTAGE 4 f = MHz I C = A T A = 5 Figure 3. Base Emitter Turn On Voltage vs. Collector Current Figure 4. Input Capacitance C obo, OUTPUT CAPACITANCE 35 3 25 2 5 f = MHz I E = A T A = 2 4 8 2 4 V CB, COLLECTOR BASE VOLTAGE Figure 5. Output Capacitance 5
PACKAGE DIMENSIONS SOT 53, LEAD CASE 43A ISSUE F D X 5 4 2 3 e E Y b 5 PL.8 (.3) M X Y A L H E C NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.5.55..2.2.23 b.7.22.27.7.9. C D.8.5.2..8.7.3.59.5.2.7. E..2.3.43.47.5 e.5 BSC.2 BSC L..2.3.4.8.2 H E.5..7.59.2. SOLDERING FOOTPRINT*.3.8.45.77.35.53..394.5.5.97.97 SCALE 2: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 32, Phoenix, Arizona 8582 32 USA Phone: 48 829 77 or 8 344 38 Toll Free USA/Canada Fax: 48 829 779 or 8 344 387 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 282 9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2 9 Kamimeguro, Meguro ku, Tokyo, Japan 53 5 Phone: 8 3 5773 385 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. EMF5XVT5/D