PRODUCT SUMMARY SOT-227 V CES 6 V I C DC A at 7 C V CE(on) typical at A, 25 C.72 V I F DC A at 25 C Insulated Gate Bipolar Transistor (Trench IGBT), A FEATURES GTDA6U Trench IGBT technology with positive temperature coefficient Square RBSOA 3 μs short circuit capability FRED Pt antiparallel diodes with ultrasoft reverse recovery T J maximum = 75 C Fully isolated package Very low internal inductance ( 5 nh typical) Industry standard outline UL approved file E78996 Compliant to RoHS directive 22/95/EC BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-227 packages Speed 4 khz to 3 khz Lower conduction losses and switching losses Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 6 V Continuous collector current I () C T C = 8 C 37 T C = 25 C 84 Pulsed collector current I CM 35 Clamped inductive load current I LM 35 A T C = 25 C Diode continuous forward current I F T C = 8 C 7 Peak diode forward current I FSM 2 Gate to emitter voltage V GE ± 2 V T C = 25 C 577 Power dissipation, IGBT P D T C = 7 C 223 T C = 25 C 25 Power dissipation, diode P D T C = 7 C 79 W Isolation voltage V ISOL Any terminal to case, t = min 25 V Note () Maximum continuous collector current must be limited to A to do not exceed the maximum temperature of terminals Document Number: 9385 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
GTDA6U Insulated Gate Bipolar Transistor (Trench IGBT), A ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 25 μa 6 - - Collector to emitter voltage V V GE = 5 V, I C = A -.72 2. CE(on) V GE = 5 V, I C = A, - 2. 2.2 Gate threshold voltage V GE(th) V CE = V GE, I C = 25 μa 3.5 4.6 6.5 Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma (25 C to 25 C) - - 6.8 - mv/ C V GE = V, V CE = 6 V -.6 μa Collector to emitter leakage current I CES V GE = V, V CE = 6 V, -.5 3 ma Forward voltage drop V FM V I F = 4 A, V GE = V -.78 2.2 I F = 4 A, V GE = V, -.39.74 Gate to emitter leakage current I GES V GE = ± 2 V - - ± 2 na V SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Turn-on switching loss E on I C = A, V CC = 36 V, -.35 - Turn-off switching loss E off V GE = 5 V, R g = 5-2.8 - Total switching loss E tot L = 5 μh, - 2.43 - mj Turn-on switching loss E on Energy losses -.4 - Turn-off switching loss E off include tail and - 2.83 - Total switching loss E tot diode recovery - 3.24 - I C = A, V CC = 36 V, (see fig. 8) Turn-on delay time t d(on) V GE = 5 V, R g = 5-62 - Rise time t r L = 5 μh, - 55 - ns Turn-off delay time t d(off) - 5 - Fall time t f - 29 - Reverse bias safe operating area RBSOA T J = 75 C, I C = 35 A, R g = 22 V GE = 5 V to V, V CC = 4 V, V P = 6 V, L = 5 μh Fullsquare - 6 85 ns Diode reverse recovery time t rr Diode peak reverse current I rr IF = 5 A, dif/dt = 2 A/μs, VR = 2 V - 4 7 A Diode recovery charge Q rr - 2 297 nc Diode reverse recovery time t rr - 33 54 ns I F = 5 A, di F /dt = 2 A/μs, Diode peak reverse current I rr V R = 2 V, - 2 5 A Diode recovery charge Q rr - 75 5 nc Short circuit safe operating area SCSOA T J = 75 C, R g = 22, V GE = 5 V to V, V CC = 4 V, V p = 6 V 3 μs www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 9385 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-
Insulated Gate Bipolar Transistor (Trench IGBT), A GTDA6U THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T J, T Stg - 4-75 C IGBT - -.26 Junction to case R thjc Diode - -.73 C/W Case to sink per module R thcs -.5 - Mounting torque, 6-32 or M3 screw - -.3 Nm Weight - 3 - g Allowable Case Temperature ( C) 8 6 4 2 8 6 4 2 2 4 6 8 2 4 6 8 2 9385_ I C - Continuous Collector Current (A) Fig. - Maximum DC IGBT Collector Current vs. Case Temperature I C (A) 9385_2 3 275 25 225 2 75 5 75 5 25 25 T J = 75 C.5..5 2. 2.5 3. 3.5 4. V CE (V) Fig. 3 - Typical IGBT Collector Current Characteristics V GE = 5 V I C (A) 9385_2.. V CE (V) Fig. 2 - IGBT Reverse Bias SOA T J = 75 C, V GE = 5 V Allowable Case Temperature ( C) 9385_4 8 6 4 2 8 6 4 2 2 4 6 8 2 I F - Continuous Forward Current (A) Fig. 4 - Maximum DC Forward Current vs. Case Temperature Document Number: 9385 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
GTDA6U Insulated Gate Bipolar Transistor (Trench IGBT), A 2 2.5 75 5 25 T J = 75 C 2. A I F (A) 75 5 25 V CE (V).5 5 A 27 A 9385_5.5..5 2. 2.5 3. V FM (V) Fig. 5 - Typical Diode Forward Characteristics 9385_8. 2 6 4 8 T J ( C) Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, V GE = 5 V 3. T J = 75 C 2.5 I CES (ma)... Energy (mj) 2..5. E off..5 E on. 2 3 4 5 6 9385_6 V CES (V) Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current 5. 9385_9 3 5 7 9 I C (A) Fig. 9 - Typical IGBT Energy Loss vs. I C, L = 5 μh, V CC = 36 V, R g = 5, V GE = 5 V V geth (V) 4.5 4. 3.5 3. Switching Time (ns) t f t d(off) t d(on) t r 2.5.2.3.4.5.6.7.8.9. 9385_7 I C (ma) Fig. 7 - Typical IGBT Threshold Voltage 9385_ 2 4 6 8 2 I C (A) Fig. - Typical IGBT Switching Time vs. I C, L = 5 μh, V CC = 36 V, R g = 5, V GE = 5 V www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 9385 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-
Insulated Gate Bipolar Transistor (Trench IGBT), A GTDA6U 6 9 Energy (mj) 5 4 3 2 E off E on t rr (ns) 7 5 3 9 7 5 2 3 4 5 3 9385_ R g (Ω) 9385_3 di F /dt (A/μs) Fig. - Typical IGBT Energy Loss vs. R g, I C = A, L = 5 μh, V CC = 36 V, V GE = 5 V Fig. 3 - Typical t rr Diode vs. di F /dt V rr = 2 V, I F = 5 A 3 t d(on) 25 Switching Time (ns) t f t r t d(off) I rr (A) 2 5 5 2 3 4 5 9385_2 R g (Ω) 9385_4 di F /dt (A/μs) Fig. 2 - Typical IGBT Switching Time vs. R g, L = 5 μh, V CC = 36 V, I C = A, V GE = 5 V Fig. 4 - Typical I rr Diode vs. di F /dt V rr = 2 V, I F = 5 A 4 2 Q rr (nc) 8 6 4 2 9385_5 di F /dt (A/μs) Fig. 5 - Typical Q rr Diode vs. di F /dt V rr = 2 V, I F = 5 A Document Number: 9385 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
GTDA6U Insulated Gate Bipolar Transistor (Trench IGBT), A Z thjc - Thermal Impedance Junction to Case ( C/W).. D =.5 D =.2 D =. D =.5 D =.2 D =. DC 9385_6...... t - Rectangular Pulse Duration (s) Fig. 6 - Maximum Thermal Impedance Z thjc Characteristics (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W).. D =.5 D =.2 D =. D =.5 D =.2 D =. DC 9385_7...... t - Rectangular Pulse Duration (s) Fig. 7 - Maximum Thermal Impedance Z thjc Characteristics (Diode) www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 9385 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-
Insulated Gate Bipolar Transistor (Trench IGBT), A GTDA6U 5 V V L V C * D.U.T. D.U.T. R = V CC I CM + - V CC 2 R g * Driver same type as D.U.T.; V C = 8 % of V ce(max) * Note: Due to the 5 V power supply, pulse width and inductor will increase to obtain Id Fig. 8a - Clamped Inductive Load Test Circuit Fig. 8b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + - 5 V R g D.U.T./ driver + - V CC Fig. 9a - Switching Loss Test Circuit 2 9 % 3 % V C 9 % t d(off) I C % 5 % t r t f t d(on) t = 5 µs E on E off E ts = (E on + E off ) Fig. 9b - Switching Loss Waveforms Test Circuit Document Number: 9385 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 7
GTDA6U Insulated Gate Bipolar Transistor (Trench IGBT), A ORDERING INFORMATION TABLE Device code G T D A 6 U 2 3 4 5 6 7 - Insulated Gate Bipolar Transistor (IGBT) 2 - T = Trench IGBT technology 3 - Current rating ( = A) 4 - Circuit configuration (D = Single switch with antiparallel diode) 5 - Package indicator (A = SOT-227) 6 - Voltage rating (6 = 6 V) 7 - Speed/type (U = Ultrafast) CIRCUIT CONFIGURATION 3 (C) 2 (G), 4 (E) Dimensions Packaging information LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9536 www.vishay.com/doc?9537 www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 9385 8 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-
Outline Dimensions SOT-227 DIMENSIONS in millimeters (inches) 38.3 (.58) 37.8 (.488) Ø 4.4 (.73) Ø 4.2 (.65) 2.5 (.492) Chamfer 2. (.79) x 45 7.5 (.295) 2. (.82).9 (.75) 3.2 (.89) 29.8 (.73) 8. (.39) 4 x 7.7 (.33) 5. (.59) R full.25 (.) M C A M B M 4 x M4 nuts -A- 4 3 2 6.25 (.246) 25.7 (.2) 25.2 (.992) -B- 2. (.82).9 (.75) -C-.2 (.5) 2.3 (.484).8 (.464) Notes Dimensioning and tolerancing per ANSI Y4.5M-982 Controlling dimension: millimeter Document Number: 9536 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 28-Aug-7
Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 www.vishay.com Revision: -Mar-