Insulated Gate Bipolar Transistor (Ultrafast IGBT), 9 A VS-GB9SAU SOT-7 PRODUCT SUMMARY V CES V V CE(on) typical at 75 A, 5 C. V I C DC 9 A at 9 C Speed 8 khz to khz Package SOT-7 Circuit Single Switch no diode FEATURES NPT Generation V IGBT technology Square RBSOA Positive V CE(on) temperature coefficient Fully isolated package Speed 8 khz to 6 khz Very low internal inductance ( 5 nh typical) Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?999 BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting on heatsink Plug-in compatible with other SOT-7 packages Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES V Continuous collector current I () T C = 5 C 9 C T C = 9 C 9 A Pulsed collector current I CM Clamped inductive load current I LM Gate to emitter voltage V GE ± V T C = 5 C 86 Power dissipation, IGBT P D T C = 9 C W Isolation voltage V ISOL Any terminal to case, t = min 5 V Note () Maximum collector current admitted is A, to do exceed the maximum temperature of terminals ELECTRICAL SPECIFICATIONS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 5 μa - - V GE = 5 V, I C = 75 A -..8 Collector to emitter voltage V CE(on) V GE = 5 V, I C = 75 A, T J = 5 C -.6.9 V V GE = 5 V, I C = 75 A, T J = 5 C -.7 - V CE = V GE, I C = 5 μa 5 6 Gate threshold voltage V GE(th) V CE = V GE, I C = 5 μa, T J = 5 C -. - Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma (5 C to 5 C) - - - mv/ C Collector to emitter leakage current I CES V GE = V, V CE = V, T J = 5 C -. V GE = V, V CE = V, T J = 5 C - 6.5 ma V GE = V, V CE = V - 7 5 μa Gate to emitter leakage current I GES V GE = ± V - - ± 5 na Revision: -May-6 Document Number: 975 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB9SAU SWITCHING CHARACTERISTICS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g - 69 - Gate to emitter charge (turn-on) Q ge I C = 5 A, V CC = 6 V, V GE = 5 V - 65 - nc Gate to collector charge (turn-on) Q gc - 5 - Turn-on switching loss -. - Turn-off switching loss E off -. - mj Total switching loss E tot I C = 75 A, V CC = 6 V, -. - Turn-on delay time t d(on) V GE = 5 V, R g = 5-5 - L = 5 μh, T J = 5 C Rise time t r - 8 - Energy losses Turn-off delay time t d(off) include tail - 8 - ns Fall time t f and diode - 9 - Turn-on switching loss recovery -.7 - Turn-off switching loss E Diode used off -.8 - mj HFA6PB Total switching loss E tot I C = 75 A, V CC = 6 V, - 5.78 - Turn-on delay time t d(on) V GE = 5 V, R g = 5-5 - Rise time t r L = 5 μh, T J = 5 C - 8 - Turn-off delay time t d(off) - 8 - ns Fall time t f - - Reverse bias safe operating area RBSOA T J = 5 C, I C = A, R g = V GE = 5 V to V, V CC = 9 V, V P = V, L = 5 μh Fullsquare THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg - - 5 C Thermal resistance junction to case R thjc - -.5 Thermal resistance case to heatsink R thcs Flat, greased surface -.5 - C/W Weight - - g Mounting torque Torque to terminal - -. (9.7) Nm (lbf.in) Torque to heatsink - -. (.5) Nm (lbf.in) Case style SOT-7 Allowable Case Temperature ( C) 6 8 6 DC 6 8 6 I C - Collector-to-Emitter Current (A) 5 5 V GE = 5 V T J = 5 C T J = 5 C T J = 5 C..... 5. 6. 7. I C - Continuous Collector Current (A) V CE - Collector-to-Emitter Voltage (V) Fig. - Maximum DC IGBT Collector Current vs. Case Temperature Fig. - Typical Collector to Emitter Current Output Characteristics of IGBT Revision: -May-6 Document Number: 975 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB9SAU I C - Collector-to-Emitter Current (A) 9 8 7 6 T J = 5 C 5 T J = 5 C.5 5. 5.5 6. 6.5 7. 7.5 8. 8.5 9. V GE - Gate-to-Emitter Voltage (V) Fig. - Typical IGBT Transfer Characteristics V CE - Collector-to-Emitter Voltage (V) 5.5.5.5.5 I C = A I C = 75 A I C = 5 A I C = 5 A 6 8 6 T J - Junction Temperature ( C) Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, V GE = 5 V I CES - Collector-to-Emitter Current (A) T J = 5 C T J = 5 C.. T. J = 5 C. 6 8 Switching Energy (mj) 5.5.5.5.5.5 E off 5 6 7 8 9 V CES - Collector-to-Emitter Voltage (V) I C - Collector Current (A) Fig. - Typical IGBT Zero Gate Voltage Collector Current Fig. 7 - Typical IGBT Energy Losses vs. I C T J = 5 C, L = 5 μh, V CC = 6 V, R g = 5, V GE = 5 V, Diode used HFA6PB 6 V GE(th) Threshold Voltage (V) 5.5 5.5.5.5 T J = 5 C T J = 5 C Switching Time (μs). t d(on) t r t d(off) t f...6.8. I C (A). 6 8 I C - Collector Current (A) Fig. 5 - Typical IGBT Threshold Voltage Fig. 8 - Typical IGBT Switching Time vs. I C T J = 5 C, L = 5 μh, V CC = 6 V, R g = 5, V GE = 5 V, Diode used HFA6PB Revision: -May-6 Document Number: 975 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB9SAU Energy Losses (mj) 8 6 E off Switching Time (µs) t f t r t d(on) t d(off) 5 R g (Ω) 5 R G (Ω) Fig. 9 - Typical IGBT Energy Loss vs. R g, T J = 5 C, I C = 75 A, L = 5 μh, V CC = 6 V, V GE = 5 V, Diode used HFA6PB Fig. - Typical IGBT Switching Time vs. R g T J = 5 C, L = 5 μh, V CC = 6 V, R g = 5, V GE = 5 V Z thjc - Thermal Impedance Junction to Case ( C/W)...75.5.5..5. DC P DM Notes:. Duty factor D = t /t. Peak T J = P DM x Z thjc + T C t t..... Rectangular Pulse Duration (s) Fig. - Maximum Thermal Impedance Z thjc Characteristics (IGBT) I C (A) V CE (V) Fig. - IGBT Reverse Bias SOA, TJ = 5 C, V GE = 5 V Revision: -May-6 Document Number: 975 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB9SAU 5 V V L V C * D.U.T. D.U.T. R = V CC I CM + - V CC R g * Driver same type as D.U.T.; V C = 8 % of V ce(max.) * Note: Due to the 5 V power supply, pulse width and inductor will increase to obtain Id Fig. a - Clamped Inductive Load Test Circuit Fig. b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + - 5 V R g D.U.T./ driver + - V CC Fig. a - Switching Loss Test Circuit 9 % % V C 9 % t d(off) I C % 5 % t r t f t d(on) t = 5 µs E off E ts = ( + E off ) Fig. b - Switching Loss Waveforms Test Circuit Revision: -May-6 5 Document Number: 975 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB9SAU ORDERING INFORMATION TABLE Device code VS- G B 9 S A U 5 6 7 8 5 6 7 8 - product - Insulated Gate Bipolar Transistor (IGBT) - B = IGBT Generation 5 - Current rating (9 = 9 A) - Circuit configuration (S = Single switch without antiparallel diode) - Package indicator (A = SOT-7) - Voltage rating ( = V) - Speed/type (U = Ultrafast IGBT) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING (C) Lead Assignment Single switch, no antiparallel diode S (G), (E) Dimensions Packaging information LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95 www.vishay.com/doc?955 Revision: -May-6 6 Document Number: 975 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Outline Dimensions SOT-7 Generation II DIMENSIONS in millimeters (inches) Ø. (.6) Ø. (.69) 8. (.58) 7.8 (.88) -A- x M nuts.5 (.9). (.5) 6.5 (.6) 6.5 (.56) 5.7 (.).7 (.97) -B- 7.5 (.9) 7.6 (.99).5 (.) 9.8 (.7).9 (.587) 5. (.598) R full. (.8). (.87).5 (.). (.6) 8. (.7) x 7.7 (.).5 (.) M C A M B M. (.87).9 (.75). (.6).5 (.77) -C-. (.5). (.8).7 (.6) 5. (.98) 5.5 (.) Note Controlling dimension: millimeter Revision: -Aug- Document Number: 95 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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