C3D165E Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 65 V ( =135 C) = 15 Q c = 24 nc Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway pplications Package TO-252-2 PIN 1 PIN 2 CSE Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter Stages C/DC converters Part Number Package Marking C3D165E TO-252-2 C3D165 Maximum Ratings ( = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note RM Repetitive Peak Reverse Voltage 65 V SM Surge Peak Reverse Voltage 65 V V DC DC Blocking Voltage 65 V Continuous Forward Current 32 15 1 =25 C =135 C =153 C Fig. 3 RM Repetitive Peak Forward Surge Current 43.5 28 =25 C, t P = 1 ms, Half Sine Wave =11 C, t P =1 ms, Half Sine Wave SM Non-Repetitive Peak Forward Surge Current 9 71 =25 C, t p = 1 ms, Half Sine Wave =11 C, t p = 1 ms, Half Sine Wave Fig. 8,Max Non-Repetitive Peak Forward Surge Current 86 68 =25 C, t P = 1 µs, Pulse =11 C, t P = 1 µs, Pulse Fig. 8 P tot Power Dissipation 15 65 W =25 C =11 C Fig. 4 dv/dt Diode dv/dt ruggedness 2 V/ns =-65V i 2 dt i 2 t value 4.5 25 2 s =25 C, t P =1 ms =11 C, t P =1 ms T J, T stg Operating Junction and Storage Temperature -55 to +175 C 1 C3D165E Rev. B, 1-218
Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note V F I R Forward Voltage Reverse Current 1.5 2. 12 24 1.8 2.4 6 22 Q C Total Capacitive Charge 24 nc C Total Capacitance 46.5 44 4 V μ pf = 1 T J =25 C = 1 T J =175 C = 65 V T J =25 C = 65 V T J =175 C = 4 V, = 1 di/dt = 5 /μs T J = 25 C = V, T J = 25 C, f = 1 MHz = 2 V, T J = 25 C, f = 1 MHz = 4 V, T J = 25 C, f = 1 MHz Fig. 1 Fig. 2 Fig. 5 Fig. 6 E C Capacitance Stored Energy 3.6 μj = 4 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R θjc Thermal Resistance from Junction to Case 1. C/W Fig. 9 Typical Performance Fowa ard Current, I () F () 3 T J = -55 C 25 2 T J = 75 C T J = 125 C 15 T J = 175 C 1 5..5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. Foward VVoltage, F (V) V F (V) 2 4 6 8 1 12 Reverse Leaka age I Current, I RR (m) R (m) 1 9 8 7 6 5 4 3 2 1 T J = 175 C T J = 125 C T J = 75 C T J = -55 C 1 2 3 4 5 6 7 8 9 1 Reverse Voltage, (V) (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C3D165E Rev. B, 1-218
Typical Performance 1 (peak) () () 8 6 4 2 1% Duty 2% Duty 3% Duty 5% Duty 7% Duty DC P Tot (W) 16 14 12 1 8 6 4 2 25 5 75 1 125 15 175 ( C) C 25 5 75 1 125 15 175 C Figure 3. Current Derating Figure 4. Power Derating Capaciti ive Q Charge, Q C (nc) C (nc) 4 35 3 25 2 15 1 5 Conditions: Ca apacitance C (pf) (pf) 5 45 4 35 3 25 2 15 1 5 Conditions: F test = 1 MHz V test = 25 mv 1 2 3 4 5 6 7 Reverse VVoltage, R (V) (V) 1 1 1 1 Reverse VVoltage, R (V) (V) Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 3 C3D165E Rev. B, 1-218
Typical Performance 1 1, 9 8 Capacitance Sto ored E Energy, E C (µj) C (mj) 7 6 5 4 3 2 1 1 2 3 4 5 6 7 Reverse VVoltage, (V) R (V) SM FSM () 1 T J_initial = 25 C T J_initial = 11 C 1 1E-6 1E-6 1E-3 1E-3 t p (s) Time, t p (s) Figure 7. Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Thermal Resistance Thermal Resistance ( C/W) ( o C/W) 1 1E-3 1E-3.5.3.1.5.2 SinglePulse.1 1E-3 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1 Time, T (Sec) t p (s) Figure 9. Transient Thermal Impedance 4 C3D165E Rev. B, 1-218
Package Dimensions Package TO-252-2 SYMBOL MILLIMETERS MIN MX 2.159 2.413 1.13 b.64.89 b2.653 1.143 b3 5.4 5.6 c.457.61 c2.457.864 D 5.867 6.248 D1 5.21 - E 6.35 7.341 E1 4.32 - e 4.58 BSC H 9.65 1.414 L 1.16 1.78 L2.51 BSC L3.889 1.27 L4.64 1.1 θ 8 Recommended Solder Pad Layout TO-252-2 Part Number Package Marking C3D165E TO-252-2 C3D165 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C3D165E Rev. B, 1-218
Diode Model Vf T = V T + If * R T V T =.94 + (T J * -1.3*1-3 ) R T =.44 + (T J * 4.4*1-4 ) Note: T V T R j = Diode Junction Temperature In Degrees Celsius, T valid from 25 C to 175 C Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. RECh Compliance RECh substances of high concern (SVHCs) information is available for this product. Since the European Chemical gency (ECH) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date RECh SVHC Declaration. RECh banned substance information (RECh rticle 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/power/products#sicschottkydiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/diode-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/11562/215-7-31/349i Copyright 218 Cree, Inc. ll rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 US Tel: +1.919.313.53 Fax: +1.919.313.5451 www.cree.com/power 6 C3D165E Rev. B, 1-218