From 1 Tbs per Carrier to 1 THz

Similar documents
Optical Phase-Locking and Wavelength Synthesis

100+ GHz Transistor Electronics: Present and Projected Capabilities

Mm-Wave Silicon Sensors. and Active Tags

Integrated Circuits for Wavelength Division De-multiplexing in the Electrical Domain

Sub-mm-Wave Technologies: Systems, ICs, THz Transistors

mmw to THz ultra high data rate radio access technologies

65-GHz Receiver in SiGe BiCMOS Using Monolithic Inductors and Transformers

50-500GHz Wireless Technologies: Transistors, ICs, and Systems

95GHz Receiver with Fundamental Frequency VCO and Static Frequency Divider in 65nm Digital CMOS

An Inductor-Based 52-GHz 0.18 µm SiGe HBT Cascode LNA with 22 db Gain

A 60-GHz Digitally-Controlled Phase Modulator with Phase Error Calibration

Updates on THz Amplifiers and Transceiver Architecture

ISSCC 2006 / SESSION 13 / OPTICAL COMMUNICATION / 13.2

Technology Trend of Ultra-High Data Rate Wireless CMOS Transceivers

REPORT DOCUMENTATION PAGE

Project: IEEE P Working Group for Wireless Personal Area Networks (WPANs)

L évolution des systèmes de transmission optique très haut débit et l impact de la photonique sur silicium

Low Power DSP and Photonic Integration in Optical Networks. Atul Srivastava CTO, NTT Electronics - America. Market Focus ECOC 2014

THz communications: general issues THz devices for coms (Tx and Rx) Some Reported com links Some conclusions

A 1.7-to-2.2GHz Full-Duplex Transceiver System with >50dB Self-Interference Cancellation over 42MHz Bandwidth

THz Indium Phosphide Bipolar Transistor Technology

A 1.55 GHz to 2.45 GHz Center Frequency Continuous-Time Bandpass Delta-Sigma Modulator for Frequency Agile Transmitters

Photonic Integrated Circuits for 400 Gigabit and 1 Terabit Coherent Transport

Radio Technologies for 5G Using Advanced Photonic Infrastructure for Dense User Environments

PLC-based integrated devices for advanced modulation formats

High-Frequency Transistors High-Frequency ICs. Technologies & Applications

Pulse-Based Ultra-Wideband Transmitters for Digital Communication

A 30-GS/sec Track and Hold Amplifier in 0.13-µm CMOS Technology Shahriar Shahramian Sorin P. Voinigescu Anthony Chan Carusone

What to do with THz? Ali M. Niknejad Berkeley Wireless Research Center University of California Berkeley. WCA Futures SIG

Broadband Drivers with Wave Shape Control for Optical Fiber and Backplane Applications. Recommended reading: 1) Chapters 7 and 8, Sackinger

SiGe BiCMOS and Photonic technologies for high frequency and communication applications Andreas Mai

Design and Implementation of High-Speed CMOS Clock and Data Recovery Circuit for Optical Interconnection Applications. Seong-Jun Song. Dec.

mm-wave Transceiver Challenges for the 5G and 60GHz Standards Prof. Emanuel Cohen Technion

Radio Research Directions. Behzad Razavi Communication Circuits Laboratory Electrical Engineering Department University of California, Los Angeles

SiNANO-NEREID Workshop:

Research and Development Activities in RF and Analog IC Design. RFIC Building Blocks. Single-Chip Transceiver Systems (I) Howard Luong

Packaged mm-wave GaN, GaAs and Si ICs for 5G and automotive radar

Session 3. CMOS RF IC Design Principles

System-on-Chip Design Beyond 50 GHz

2284 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 43, NO. 10, OCTOBER /$ IEEE

A Fully Integrated 20 Gb/s Optoelectronic Transceiver Implemented in a Standard

Fiber-fed wireless systems based on remote up-conversion techniques

System Impairments Mitigation for NGPON2 via OFDM

5.4: A 5GHz CMOS Transceiver for IEEE a Wireless LAN

Radar System Design Considerations -- System Modeling Findings (MOS-AK Conference Hangzhou 2017)

High Speed Detectors. Andreas Umbach ECOC 2009, Workshop 7 Monolithic and Hybrid Photonic Integrated Transceivers for Advanced Modulation Formats

Silicon Photonics in Optical Communications. Lars Zimmermann, IHP, Frankfurt (Oder), Germany

TU3B-1. An 81 GHz, 470 mw, 1.1 mm 2 InP HBT Power Amplifier with 4:1 Series Power Combining using Sub-quarter-wavelength Baluns

Real-time Implementation of Digital Coherent Detection

Frequency Synthesizers for RF Transceivers. Domine Leenaerts Philips Research Labs.

Project: IEEE P Working Group for Wireless Personal Area Networks (WPANs)

A 0.18µm SiGe BiCMOS Receiver and Transmitter Chipset for SONET OC-768 Transmission Systems

4x100GE through 2 and 10km SMF Using DMT and 1.3mm LAN-WDM EMLs. Winston Way, Trevor Chan, NeoPhotonics, USA

EE 232 Lightwave Devices Optical Interconnects

ISSCC 2003 / SESSION 20 / WIRELESS LOCAL AREA NETWORKING / PAPER 20.2

Proposing. An Interpolated Pipeline ADC

Peter J. Winzer Bell Labs, Alcatel-Lucent. Special thanks to: R.-J. Essiambre, A. Gnauck, G. Raybon, C. Doerr

A 64Gb/s PAM-4 Transmitter with 4-Tap FFE and 2.26pJ/b Energy Efficiency in 28nm CMOS FDSOI

Silicon Photonics: an Industrial Perspective

WWDM Transceiver Module for 10-Gb/s Ethernet

SiGe PLL design at 28 GHz

Demo board DC365A Quick Start Guide.

Millimeter-Wave Amplifiers for E- and V-band Wireless Backhaul Erik Öjefors Sivers IMA AB

Broadband Communications at mmwave Frequencies: An MSK system for Multi-Gb/s Wireless Communications at 60GHz. IBM Research

60 GHz Receiver (Rx) Waveguide Module

A GHz Quadrature ring oscillator for optical receivers van der Tang, J.D.; Kasperkovitz, D.; van Roermund, A.H.M.

Presentation Overview

30% PAE W-band InP Power Amplifiers using Sub-quarter-wavelength Baluns for Series-connected Power-combining

SHF Communication Technologies AG. Wilhelm-von-Siemens-Str. 23D Berlin Germany. Phone Fax

Electronic-Photonic ICs for Low Cost and Scalable Datacenter Solutions

Integration of Optoelectronic and RF Devices for Applications in Optical Interconnect and Wireless Communication

FD-SOI FOR RF IC DESIGN. SITRI LETI Workshop Mercier Eric 08 september 2016

Design of low-loss 60 GHz integrated antenna switch in 65 nm CMOS

Introduction to ixblue RF drivers and amplifiers for optical modulators

From static WDM transport to software-defined optics

65-nm CMOS, W-band Receivers for Imaging Applications

CMOS 120 GHz Phase-Locked Loops Based on Two Different VCO Topologies

THz HBTs & sub-mm-wave ICs

RESEARCH is underway in many industry and academic

SHF Communication Technologies AG. Wilhelm-von-Siemens-Str. 23D Berlin Germany. Phone Fax

Istituto Superiore Mario Boella, via P. C. Boggio 61, Torino - Italy

Lecture 160 Examples of CDR Circuits in CMOS (09/04/03) Page 160-1

GaN Power Amplifiers for Next- Generation Wireless Communications

2002 IEEE International Solid-State Circuits Conference 2002 IEEE

Silicon-based Ultra Compact Cost-efficient System Design for mmwave Sensors SUCCESS

A 3.9 ns 8.9 mw 4 4 Silicon Photonic Switch Hybrid-Integrated with CMOS Driver

Si Photonics Technology Platform for High Speed Optical Interconnect. Peter De Dobbelaere 9/17/2012

A 1.6-to-3.2/4.8 GHz Dual Modulus Injection-Locked Frequency Multiplier in

Hot Topics and Cool Ideas in Scaled CMOS Analog Design

IBM T. J. Watson Research Center IBM Corporation

ECEN620: Network Theory Broadband Circuit Design Fall 2014

Optical Measurements in 100 and 400 Gb/s Networks: Will Coherent Receivers Take Over? Fred Heismann

THE next generation of 5G wireless terminals and base

High speed electronics (in optical communications)

SHF Communication Technologies AG. Wilhelm-von-Siemens-Str. 23D Berlin Germany. Phone Fax

Low-Power Pipelined ADC Design for Wireless LANs

20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS

hnsmd co.,ltd Sale Phone:

Chapter 6. Case Study: 2.4-GHz Direct Conversion Receiver. 6.1 Receiver Front-End Design

Quantum-effect Resonant Tunneling Device Technology for Practical Ultra Low-power High-speed Applications

Transcription:

From 1 Tbs per Carrier to 1 THz Sorin P. Voinigescu ECE Department, University of Toronto European Microwave Conference 1

Outline Introduction Examples of Tbs Wireless and Photonics Systems Segmented Power DAC Architectures Conclusions 2

We are addicted... 3

What s in a cloud? wireless links optical fiber links data centers 4

Why 100+Gb/s wireless? Near field communications Home cloud Short-range reconfigurable wireless data transmission in the data center Board-to-board 5

Need >10x improvement in efficiency, bandwidth Need digital techniques at over 100 Gbaud Need centre frequencies above 200 GHz 6

Outline Introduction Examples of Tbs Wireless and Photonics Systems Segmented Power DAC Architectures Conclusions 7

State-of-the-Art mm-wave Radio/Fiberoptics TX LPF I-DATA 0..fB I-DAC ai N bits cos(ωlot) LO 0o flo = frf frf frf f frf PA sin(ωlot) 0..fB N bits Q-DAC Q-DATA 90o 0 bq LPF Versatile Transparent to modulation scheme Linear Inefficient! M. Nagatani 8

240-GHz, 1.1km Wireless Link 240 GHz IQ Rx/Tx MMIC 35 nm GaAs mhemt 1.1 km 12 GBd QPSK EVM 22.7% 35 Gbit/s BPSK BER < 6 10-8 Courtesy of Ingmar Kalfass, Universität Stuttgart 9

100 Gb/s with Optical Tx & Electronic Rx König et.al. OFC2013 Courtesy of Ingmar Kalfass, Universität Stuttgart 10

Trends in Optical Communications 60Gs/sec InP DACs Courtesy of Koichi Murata, NTT 11

How Can We Get to 1 Tb/s per Carrier? Fiber: Dual-polarization, 16-QAM at 125 Gbaud 8 data lanes at 125 Gb/s Need phase equalization in receiver Need 8 bit 125-GS/sec DACs Need OSNR> 20 db, optical amplifiers Wireless: 256-QAM at 125 Gbaud 8 data lanes at 125 Gb/s Need amplitude and phase equalization in receiver Need 12 bit 125-GS/sec DACs Need SNR> 26 db 12

Doubling DAC, ADC sampling rate by mixing Ciena, CSICS 2013 2x64 GS/sec = 128 GS/sec 13

Flexible Coherent Fiberoptic Transceiver Ciena, CSICS 2013 16-QAM 4x128 Gbaud = 1.024 Tb/s 14

THz ICs for Optical WDM Recovery in the Electrical Domain Bandwidth of optical fiber: ~5 THz Bandwidth of modern ICs: ~800GHz With THz transistors, and with optical single-sideband mixing, one electrical IC can receive 1.6 THz of optical spectrum: 64 WDM channels Conventional WDM receiver: needs optical filters, many optical receivers WDM receiver using THz ICs: after optical mixing, optical WDM channels become DC-800 GHz subcarriers H-C Park et al (UCSB), ECOC 2013, Sept. 23-27 Courtesy of Mark Rodwell, UCSB 15

Silicon active components III-V Laser Ge photodiodes > 100 GHz bandwidth Vertical structure LETI Modulators <80 Gb/s Lateral structure [D. Thompson et al. IEEE Ph.Letts, 2012] [X. Wu et al., ISSCC 2013] 16

Electronics-photonics Integration Monolithic Back-end of bulk CMOS SOI CMOS SiGe SOI-BiCMOS Optical fibers Heterogeneous Electronic die Electronic die Si photonic die Photonic/electric interposer Substrate PCB 0.5 nh bondwire ESD Pad: 50 ff ESD Pad: 50 ff CPD 10 ff-60 ff ESD Pad: 50 ff ElectronicsTXRX microprocessor Si interposer 1cm Line: 0.5 db/cm 0.5 mm Photonics PD/VCSEL line 0.5 db/mm Pad: 20 ff Package substrate Pad: 20 ff 17

Outline Introduction Examples of Tbs Wireless and Photonics systems Segmented Power DAC Architectures Conclusions 18

Direct Digital Modulation Transmitters LPF I-DATA 0..fB I-DAC ai N bits cos(ωlot) LO 0o flo = frf frf frf f frf PA sin(ωlot) 0..fB N bits Q-DAC Q-DATA 90o 0 bq LPF 5-50 GS/s ak N bits Power I-DATA DAC cos(ωlot) LO 0o 300 GHz flo = frf 5-50 GS/s bk 64QAM 56 GS/s 90o sin(ωlot) N bits Power Q-DATA DAC 19

Segmented Power DAC Architectures Tuned (<100GHz BW) mm-wave wireless Coarse segmentation at antenna level Fine bits in each antenna element Free-space power combining 50 Gbaud Broadband (DC to >100 GHz) fiber Course segmentation at DA cell Fine segmentation in DA cell T-line power combiner 50-110 Gbaud 20

Segmented Power DAC Architectures (ii) Optical Coarse segmentation at modulator electrode level Fine bits in driver element Optical waveguide power combining 5-50 Gbaud [X. Wu et al., ISSCC 2013] 21

Broadband Power DAC Distributed Segmentation: 7 MSBs and 7 LSBs in 8:1 size ratio 7 LSBs 7 MSBs [A. Balteanu et al. IMS 2012] Applications as m PAM optical modulator driver Gb/s radio testing (DC to 60 GHz) 22

Distributed DAC Cell 23

Die Photo and Technology LSB 6 Bias2 LSB 5 2.5 V LSB 4 Bias1 LSB 3 2.5 V LSB 2 3.3 V 5.7 V 2.5 V 3.1 mm LSB7 LSB1 Out p In 1.8 mm Out n MSB1 MSB 6 Bias5 MSB 5 3.3 V MSB 4 2.5 V MSB 3 Bias4 MSB 2 2.5 V Bias3 5.7 V MSB7 ST 130-nm SiGe BiCMOS process 24

Measured Pout over 214 code words 25

Measured Staircase Response 56GHz 44GHz 60GHz 26

44-GHz Carrier: 1MSB switching @ 44 Gb/s 27

Can we quadruple data rate? OUT 130nm SiGe BiCMOS 55nm SiGe BiCMOS VCASBIAS DATA2 DATA1 CLK VTAIL I0 28

Next Gen: Spar and large signal simulation 29

108-GHz Clock Quasi-ECL 1.8V Logic [Y. Fu CSICS 2013] New 1.8V Quasi-CML Family BiCMOS9MW 1.8V MOS-HBT Quasi-ECL

108-GHz, 1.8V Lumped Clock-Path

75-Gb/s retimed equalization of a 3-m long cable

Retimed Cable Equalization Demos 40 Gb/s retimed with 40-GHz clock 36 Gb/s retimed with 108-GHz clock

Scaling to 55nm BiCMOS55 8x lower power consumption higher speed 280 280 36 fj/bit 0.5 m 0.5 m 55nmx2.5 m 1mA 55nmx2.5 m 1mA

120-Gb/s 4:2 MUX Retimed Lane Simulation 35

TX IQ Array with Antenna Segmentation Array element Merged DAC with PA Saturated PA 2 bits: for OOK and BPSK modulation at up to 44 GBaud Optional bits in each element 8 6 Adaptable QPSK/m-ary QAM 4 Max. PAE at each constellation point No back-off needed for linearity Quadrature 2 0-2 -4-6 -8-8 -6-4 -2 0 In Phase 2 4 6 8 36

Two solutions for 94-GHz Power DAC a) 94-GHz 9-bit Stacked Gilbert Cell (S. Shopov, ESSCIRC 2013) >15-Gb/s BPSK modulation performed in last stage >15-Gb/s ASK modulation performed in last stage b) 94-GHz 2-bit n-mos-stack PA (A. Balteanu, CSICS-2013) >44-Gb/s BPSK modulation performed in mixer >44-Gb/s OOK modulation performed in last stage 37

40+ Gb/s inductively-peaked CMOS logic 40 Gb/s 1.4V 38

94-GHz Gilbert-Cell Based IQ DAC [S. Shopov et al. ESSCIRC 2013] 39

94-GHz 9-bit stacked Gilbert cell IDC = 56.4 ma, ROPT,diff = 100Ω 40

S-par. measurements for all 255 code words 41

INL-DNL at 90 GHz from S-par. measurements 42

Large signal Pout vs. Pin for different frequencies 43

MSB, 15-Gb/s PRBS ASK/BPSK Spectra 44

15-Gb/s PRBS OOK Spectra 45

94-GHz n-mos-stack PA with OOK Modulation 46 46

LO Amplifier S-parameters 47

100/110 GHz: BPSK at 5/10/44Gb/s 48

Conclusions Power DAC transmitters with antenna/modulator segmentation Convergence of digital with THz techniques 44-Gbaud (88G b/s) 2-bit Power-DAC at 100-110 GHz 15-Gbaud (120 Gb/s) 19 dbm, 18-bit IQ Power DAC 60GS/sec 6Vpp 6-bit Distributed Power DAC 200+ Gb/s radio at 240 GHz feasible in silicon 100-Gb/s electronics for 1Tbs/carrier fiberoptics Need progress in modulators and electronic-photonic integration 49

Credits Graduate students Funding Andreea Balteanu NSERC, Stefan Shopov OCE, Yingying Fu Robert Bosch, Ioannis Sarkas DARPA, Alex Tomkins Ciena, Eric Dacquay Gennum Ivan Krotnev Chip donations STMicroelectronics, DARPA Ciena 50

240-GHz SiGe HBT Radar Transceiver Bredendiek et al, IMS 2013 51

300-GHz SiGe HBT VCO-Doubler Source S. Voinigescu et al., JSSC 2013 52

InP HBT Integrated Circuits: 600 GHz & Beyond Vtune 614 GHz fundamental M. Seo, TSC / VCO UCSB M. Seo, TSC / UCSB 340 GHz dynamic frequency divider Vtune VBB VEE VBB VEE Vout M. Seo, UCSB/TSC IMS 2010 Vout 585-600 GHz amplifier, > 34 db gain, 2.8 dbm output 300 GHz fundamental PLL M. Seo, TSC IMS 2013 M. Seo, TSC IMS 2011 204 GHz static frequency divider (ECL master-slave latch) Z. Griffith, TSC CSIC 2010 Integrated 300/350GHz Receivers: LNA/Mixer/VCO M. Seo TSC 220 GHz 180 mw power amplifier T. Reed, UCSB Z. Griffith, Teledyne CSICS 2013 600 GHz Integrated Transmitter PLL + Mixer M. Seo TSC Courtesy of Mark Rodwell 53

40 Operating Frequency = 220 GHz 35 Pdc = 12 W 30 25 20 Simulations 15 10 5 0-30 -25-20 -15-10 -5 0 5 10 400 350 300 250 200 150 100 50 0 Pout (mw) Gain (db), Pout (dbm) 220 GHz, 180mW Power Amplifier Pin (dbm) Simulations: 320 mw ouput @ P1dB Measurements to date: 180 mw @ 220 GHz T. Reed, UCSB Z. Griffith, Teledyne Teledyne 256 nm InP HBT ( To be presented, CSICS 2013) 54

60-GS/s 6-bit broadband DAC in InP HBT M. Nagatani et al. CSICS 2011 Courtesy of Koichi Murata, NTT 55

Example: Binary-Weighted Optical DAC [X. Wu et al, ISSCC 2013]

Optical 16-PAM Eye Diagram

100-GHz Ge PIN Photodiodes on SOI LETI

94-GHz BPSK Modulator 59