HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Motor Control & LED Lighting Power DC-DC Converters Key Parameters Parameter Value Unit BS @T j,max 85 V 14 A R DS(on), max.38 Ω Qg, Typ 18 nc Package & Internal Circuit G D S TO-22F March 217 Absolute Maximum Ratings T J =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 8 V Gate-Source Voltage ±3 V Drain Current Continuous (T C = 25 ) 14 * A Drain Current Continuous (T C = ) 8.9 * A M Drain Current Pulsed (Note 1) 42 * A E AS Single Pulsed Avalanche Energy (Note 2) 49 mj dv/dt MOSFET dv/dt ruggedness, = 64V 5 V/ns dv/dt Reverse diode dv/dt, = 64V, S 15 V/ns P D Power Dissipation (T C = 25 ) 32 W T J, T STG Operating and Storage Temperature Range -55 to +15 T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Resistance Characteristics 3 Symbol Parameter Typ. Max. Units R θjc Junction-to-Case -- 3.9 R θja Junction-to-Ambient -- 62.5 /W
Electrical Characteristics T J =25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, = 25 μa 2.5 -- 4.5 V R DS(ON) Off Characteristics BS Drain-Source Breakdown Voltage = V, = 25 μa 8 -- -- V SS Static Drain-Source On-Resistance Zero Gate Voltage Drain Current = 8 V, = V -- -- μa = 8 V, T J = 15 -- -- μa I GSS Gate-Body Leakage Current = ±3 V, = V -- -- ± na Dynamic Characteristics = V, = 7 A --.34.38 Ω C iss Input Capacitance -- 79 -- pf C oss Output Capacitance = V, = V, f = 1. MHz -- 62 -- pf C rss Reverse Transfer Capacitance -- 7 -- pf Switching Characteristics t d(on) Turn-On Time -- 29 -- ns t r Turn-On Rise Time = 4 V, = 14 A, -- 22 -- ns t d(off) Turn-Off Delay Time R G = 25 Ω -- 79 -- ns t f Turn-Off Fall Time -- 23 -- ns Q g Total Gate Charge -- 18 23 nc Q gs Gate-Source Charge = 64 V, = 14 A = V -- 4.2 -- nc Q gd Gate-Drain Charge -- 8. -- nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current -- -- 14 I SM Pulsed Source-Drain Diode Forward Current -- -- 42 V SD Source-Drain Diode Forward Voltage I S = 14 A, = V -- -- 1.5 V trr Reverse Recovery Time I S = 7 A, = V -- 345 -- ns Qrr Reverse Recovery Charge di F /dt = A/μs -- 4.5 -- μc Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I AS =3.4A, =5V, R G =25Ω, Starting T J =25 C 3. Pulse Test : Pulse Width 3μs, Duty Cycle 2% A
Typical Characteristics R DS(ON) [Ω], Drain-Source On-Resistance 4 35 Top : 3 Bottom : 25 2 15 5 2 V V 8 V 7 V 6 V 5 V 5 15 2 25, Drain-Source Voltage [V].5.45.4.35.3 Figure 1. On Region Characteristics = V = 2V Note : T J = 25 o C.25 4 8 12 16 2 24 R, Reverse Drain Current [A] 4 35 3 25 2 15 1.1.1 1E-3 Figure 2. Transfer Characteristics 15 o C 25 o C 25 o C 15 o C 5 1. = 2V 2. 3us Pulse Test 2 4 6 8, Gate-Source Voltage [V] 1E-4 1. = V 2. 3us Pulse Test 1E-5..2.4.6.8 1. 1.2 V SD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 4 C iss = C gs + C gd (C ds = shorted) 12 Capacitances [pf] 3 2 C oss = C ds + C gd C rss = C gd 1 C Note : rss 1. = V 2. f = 1 MHz 2 4 6 8, Drain-Source Voltage [V] C iss C oss, Gate-Source Voltage [V] 8 6 4 2 = 16V = 4V = 64V Note : = 14 A 4 8 12 16 2 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1..9.8 - -5 5 15 2-2 Figure 7. Breakdown Voltage Variation vs Temperature Operation in This Area is Limited by R DS(on) T J, Junction Temperature [ o C] 1. T C = 25 o C 2. T J(Max) = 15 o C 3. Single Pulse -1 2, Drain-Source Voltage [V] Note : 1. = V 2. = 25µA µs µs 1 ms ms ms Figure 9. Maximum Safe Operating Area DC R DS(ON), (Normalized) Drain-Source On-Resistance 3. 2.5 2. 1.5 1..5. - -5 5 15 2 14 12 8 6 4 2 T J, Junction Temperature [ o C] Note : 1. = V 2. = 7 A Figure 8. On-Resistance Variation vs Temperature 25 5 75 125 15 T C, Case Temperature [ o C] Figure. Maximum Drain Current vs Case Temperature 1 Z θ JC (t), Thermal Response -1-2 D=.5.2.1.5.2.1 single pulse 1. Z θ JC (t) = 3.9 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM -5-4 -3-2 -1 1 t 1, Square Wave Pulse Duration [sec] t 1 t 2 Figure 11. Transient Thermal Response Curve
12V 2nF 3mA 5KΩ 3nF Fig 12. Gate Charge Test Circuit & Waveform Same Type as Fig 13. Resistive Switching Test Circuit & Waveforms R L V Q gs 9% Q g Q gd Charge R G (.5 rated ) V V in % t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- 1 L L I 2 2 AS BS -------------------- BS -- BS I AS R G (t) V (t) t p Time
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms R G I S Driver + _ Same Type as L dv/dt controlled by RG I S controlled by pulse period ( Driver ) D = Gate Pulse Width -------------------------- Gate Pulse Period V I FM, Body Diode Forward Current I S ( ) di/dt I RM Body Diode Reverse Current ( ) Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
Package Dimension 15.87±.2 3.3±.2 1.47max.16±.2 TO-22F φ3.18±.2 9.75±.2 12.42±.2 6.68±.2.8±.2 4.7±.2 2.54±.2.5±.2.7±.2 Pin hole 2.76±.2.16±.2 φ3.18±.2 4.7±.2 2.54±.2.7±.2 15.87±.2 3.3±.2 12.42±.2 6.68±.2 TO-22F-FM(Full Mold) 2.76±.2 1.47max 9.75±.2.8±.2.5±.2