SUD9P-95 P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) Q g (Typ.).95 at V GS = - V - 8.8 -.7.2 at V GS = - 4.5 V - 8.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET Power MOSFET % R g and UIS Tested Compliant to RoHS Directive 22/95/EC APPLICATIONS Power Switch DC/DC Converters TO-252 S G Drain Connected to Tab G D S Top View Ordering Information: SUD9P-95-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS - Gate-Source Voltage V GS ± 2 V - 8.8 Continuous Drain Current (T J = 5 C) I D T C = 7 C - 7. A Pulsed Drain Current I DM - 5 Avalanche Current I AS - 8 Single Avalanche Energy a L =. mh E AS 6.2 mj Maximum Power Dissipation a 32. b P D T A = 25 C c 2.5 W Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount) c R thja 5 C/W Junction-to-Case (Drain) R thjc 3.9 Notes: a. Duty cycle %. b. See SOA curve for voltage derating. c. When Mounted on " square PCB (FR-4 material). S-634-Rev. A, 22-Mar-
SUD9P-95 SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V DS = V, I D = - 25 µa - V Gate Threshold Voltage V GS(th) V DS = V GS, I D = - 25 µa - - 2.5 Gate-Body Leakage I GSS V DS = V, V GS = ± 2 V ± 25 na Zero Gate Voltage Drain Current I DSS V DS = - V, V GS = V, T J = 25 C - 5 µa V DS = - V, V GS = V - V DS = - V, V GS = V, T J = 5 C - 25 On-State Drain Current a I D(on) V DS - V, V GS = - V - 5 A V GS = - V, I D = - 3.6 A Drain-Source On-State Resistance a.62.95 V GS = - 4.5 V, I D = - 3.4 A.75.2 Ω Forward Transconductance a g fs V DS = - 5 V, I D = - 3.6 A 2 S Dynamic b Input Capacitance C iss V GS = V, V DS = - 5 V, f = MHz 55 Output Capacitance C oss 65 pf Reverse Transfer Capacitance C rss 4 Total Gate Charge c V Q DS = - 5 V, V GS = - V, I D = - 3.6 A 23.2 34.8 g.7 7.6 nc Gate-Source Charge c Q gs V DS = - 5 V, V GS = - 4.5 V, I D = - 3.6 A 3.5 Gate-Drain Charge c Q gd 4.8 Gate Resistance R g f = MHz.2 5.7.5 Ω Turn-On Delay Time c t d(on) 7 4 Rise Time c t r V DD = - 5 V, R L = 7.2 Ω 2 8 Turn-Off Delay Time c t d(off) I D - 2.9 A, V GEN = - V, R g = Ω 33 5 ns Fall Time c t f 9 8 Drain-Source Body Diode Ratings and Characteristics b Continuous Current I S - 8.8 Pulsed Current I SM - 5 A Forward Voltage a V SD I F = - 2.9 A, V GS = V -.8 -.5 V Reverse Recovery Time t rr 5 75 ns Peak Reverse Recovery Current I RM(REC) I F = - 2.9 A, di/dt = A/µs - 4-6 A Reverse Recovery Charge Q rr 98 47 nc Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 S-634-Rev. A, 22-Mar-
SUD9P-95 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 5 V GS =Vthru5V.3 2 9 6 3 V GS =4V V GS =3V - On-Resistance (Ω).25.2.5 V GS =4.5V V GS =V 2 3 4. 3 6 9 2 5 V DS - Drain-to-Source Voltage (V) Output Characteristics On-Resistance vs. Drain Current 2..6.6.2.8.4 T C =25 C - On-Resistance (Ω).45.3.5 T J = 5 C T J = 25 C T C = - 55 C. 2 3 4. 2 4 6 8 V GS - Gate-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 25 I D =3.6A - Transconductance (S) g fs 2 5 5 T C = - 55 C - Gate-to-Source Voltage (V) V GS 8 6 4 2 V DS =25V V DS =5V V DS =8V 3 6 9 2 5 Transconductance 5 5 2 25 Q g - Total Gate Charge (nc) Gate Charge S-634-Rev. A, 22-Mar- 3
SUD9P-95 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted -. - Source Current (A) I S T J = 5 C T J = 25 C (V) V GS(th) -.4 -.7-2. I D = 25 μa...3.6.9.2 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage - 2.3-5 - 25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage 6 - C - Capacitance (pf) 2 8 4 C iss V DS - Drain-to-Source Voltage (V) - 6-2 - 8-24 I D = 25 μa C oss C rss 2 4 6 8 V DS - Drain-to-Source Voltage (V) Capacitance - 3-5 - 25 25 5 75 25 5 T J - Junction Temperature ( C) Drain Source Breakdown vs. Junction Temperature 2. I D =3.6A V GS =V - On-Resistance (Normalized).7.3.9 V GS =4.5V 8 6 4 2.5-5 - 25 25 5 75 25 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 25 5 75 25 5 T C - Case Temperature ( C) Current Derating 4 S-634-Rev. A, 22-Mar-
SUD9P-95 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Limited by * I DAV (A) T J = 5 C T J = 25 C - Drain Current (A) μs ms ms ms s,s,dc I D. T A = 25 C Single Pulse -6-5 -4-3 -2 - Time (s) Single Pulse Avalanche Current Capability vs. Time.. V DS - Drain-to-Source Voltage (V) *V GS > minimum V GS at which is specified Safe Operating Area BVDSS Limited Normalized Effective Transient Thermal Impedance Duty Cycle =.5.2..5. -4.2 Single Pulse -3-2 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?6593. S-634-Rev. A, 22-Mar- 5
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