PD-95640 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Lead-Free Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 50 khz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 50W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 khz) Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 V I C @ T C = 25 C Continuous Collector Current 3 I C @ T C = 0 C Continuous Collector Current 6.5 A I CM Pulsed Collector Current 52 I LM Clamped Inductive Load Current 52 V GE Gate-to-Emitter Voltage ± 20 V E ARV Reverse Voltage Avalanche Energy ƒ 200 mj P D @ T C = 25 C Maximum Power Dissipation 60 P D @ T C = 0 C Maximum Power Dissipation 24 W T J Operating Junction and -55 to + 50 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (0.063 in. (.6mm) from case ) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance G C E n-channel TO-220AB V CES = 600V V CE(on) typ. = 2.6V @, I C = 6.5A Parameter Typ. Max. Units R θjc Junction-to-Case 2. R θcs Case-to-Sink, Flat, Greased Surface 0.5 C/W R θja Junction-to-Ambient, typical socket mount 80 Wt Weight 2.0 (0.07) g (oz) www.irf.com 7/23/04
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µA V (BR)ECS Emitter-to-Collector Breakdown Voltage 8 V V GE = 0V, I C =.0A V (BR)CES / T J Temperature Coeff. of Breakdown Voltage 0.48 V/ C V GE = 0V, I C =.0mA 2.6 2.6 I C = 6.5A V CE(ON) Collector-to-Emitter Saturation Voltage 2.55 I C = 3A See Fig.2, 5 V 2.05 I C = 6.5A, T J = 50 C V GE(th) Gate Threshold Voltage 3.0 6.0 V CE = V GE, I C = 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage -8.8 mv/ C V CE = V GE, I C = 250µA g fe Forward Transconductance 5.5 8.3 S V CE = 0 V, I C = 6.5A 250 V GE = 0V, V CE = 600V I CES Zero Gate Voltage Collector Current µa 2.0 V GE = 0V, V CE = V, T J = 25 C 00 V GE = 0V, V CE = 600V, T J = 50 C I GES Gate-to-Emitter Leakage Current ±0 na V GE = ±20V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 26 38 I C = 6.5A Q ge Gate - Emitter Charge (turn-on) 3.7 5.5 nc V CC = 400V See Fig.8 Q gc Gate - Collector Charge (turn-on) 5 t d(on) Turn-On Delay Time 22 t r Rise Time 4 T J = 25 C ns t d(off) Turn-Off Delay Time 60 I C = 6.5A, V CC = 480V t f Fall Time 64 96, R G = 50Ω E on Turn-On Switching Loss 0.06 Energy losses include "tail" E off Turn-Off Switching Loss 0.08 mj See Fig. 9,, 4 E ts Total Switching Loss 0.4 0.2 t d(on) Turn-On Delay Time 2 T J = 50 C, t r Rise Time 5 I C = 6.5A, V CC = 480V ns t d(off) Turn-Off Delay Time 50, R G = 50Ω t f Fall Time 50 Energy losses include "tail" E ts Total Switching Loss 0.34 mj See Fig.,, 4 L E Internal Emitter Inductance 7.5 nh Measured 5mm from package C ies Input Capacitance 490 V GE = 0V C oes Output Capacitance 38 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 8.8 ƒ =.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V CC = 80%(V CES ), V GE = 20V, L = µh, R G = 50Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2 www.irf.com
Load Current ( A ) 25 20 5 Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 25 C T sink = 90 C Gate drive as specified Power Dissipation = 3W Triangular wave: Clamp voltage: 80% of rated 5 Ideal diodes 0 A 0. 0 00 f, Frequency (khz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 0 0 I C, Collector-to-Emitter Current (A) T J = 50 C T J = 25 C 20µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T J = 50 C T J = 25 C V CC = 50V 5µs PULSE WIDTH 5 6 7 9 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current(A) 4 2 8 6 4 2 V CE, Collector-to-Emitter Voltage(V) 3.0 2.0 80 us PULSE WIDTH I C = 3 A I C = 6.5 A I C = 3.25 A 0 25 50 75 0 25 50 T C, Case Temperature ( C).0-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) 0. D = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t2 0.0 2. Peak T J = PDM x Z thjc + TC 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) PDM t t2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
C, Capacitance (pf) 00 800 600 400 200 VGE = 0V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes C res SHORTED V GE, Gate-to-Emitter Voltage (V) 20 6 2 8 4 V CC = 400V I C = 6.5A 0 0 V CE, Collector-to-Emitter Voltage (V) 0 0 5 5 20 25 30 Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 0.5 0.4 0.3 V CC = 480V T = 25 J C I C = 6.5A Total Switching Losses (mj) 0. R G = Ohm 50Ω V CC = 480V I C = I C = 3A 6.5A I C = 3.25A 0.2 0 20 30 40 50 R G, Gate Resistance (Ohm) Ω 0.0-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Switching Losses (mj) 0.8 0.6 0.4 0.2 R G = 50Ω Ohm T J = 50 C V CC = 480V 0.0 0 2 4 6 8 2 4 I C, Collector-to-emitter Current (A) I C, Collector-to-Emitter Current (A) 0 V GE = 20V o T J = 25 C SAFE OPERATING AREA 0 00 V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA 6 www.irf.com
50V c 00V L V * C D.U.T. d 0-480V 480µF 960V R L = 480V 4 X I C@25 C * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 3a - Clamped Inductive Load Test Circuit Fig. 3b - Pulsed Collector Current Test Circuit I C 50V 00V c L Driver* d V C D.U.T. e Fig. 4a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V c d 90% e % V C 90% t d(off) Fig. 4b - Switching Loss Waveforms I C 5% % t d(on) tr E on t f E off t=5µs E ts = (E on +E off ) www.irf.com 7
TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.3) 2.62 (.3).54 (.45).29 (.405) 3.78 (.49) 3.54 (.39) - A - 4.69 (.85) 4.20 (.65) - B -.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530) 2 3 4 6.47 (.255) 6. (.240).5 (.045) MIN 4.06 (.60) 3.55 (.40) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK - GATE - GATE 2 - DRAIN - GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X.40 (.055).5 (.045) 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B A M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.4) 2.54 (.0) 2X NOTES: DIMENSIONING & TOLERANCING PER ANSI Y4.5M, 982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF LOT CODE 789 AS S E MB LE D ON WW 9, 997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INTE RNAT IONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 997 WEEK 9 LINE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 8 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/