dvanced Process Technoogy Utra Low OnResistance P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree S S S G 2 3 IRF746QPbF 8 7 6 4 5 HEXFET Power MOSFET P 9624 V SS = 30V R S(on) = 0.02Ω escription These HEXFET Power MOSFET's in package utiize the astest processing techniques to achieve extremey ow onresistance per siicon area. dditiona features of these HEXFET Power MOSFET's are a 50 C junction operating temperature, fast switching speed and improved repetitive avaanche rating. These benefits combine to make this design an extremey efficient and reiabe device for use in a wide variety of appications. The efficient SO8 package provides enhanced therma characteristics making it idea in a variety of power appications. This surface mount SO8 can dramaticay reduce board space and is aso avaiabe in Tape & Ree. Top View SO8 bsoute Maximum Ratings Parameter Max. Units I @ T = 25 C Continuous rain Current, V GS @ 0V 0 I @ T = 70 C Continuous rain Current, V GS @ 0V 7. I M Pused rain Current 45 P @T = 25 C Power issipation 2.5 W Linear erating Factor 0.02 mw/ C V GS GatetoSource Votage ± 20 V E S Singe Puse vaanche Energy 370 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J, T STG Junction and Storage Temperature Range 55 to 50 C Therma Resistance Ratings Parameter Typ. Max. Units R θj Maximum Junctiontombient 50 C/W www.irf.com 08/09/0
Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Votage 30 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp. Coefficient 0.024 V/ C Reference to 25 C, I = m R S(on) Static raintosource OnResistance 0.020 V GS = 0V, I = 5.6 Ω 0.035 V GS = 4.5V, I = 2.8 V GS(th) Gate Threshod Votage.0 V V S = V GS, I = 250µ g fs Forward Transconductance 5.6 S V S = 0V, I = 2.8 I SS raintosource Leakage Current.0 V S = 24V, V GS = 0V µ 25 V S = 24V, V GS = 0V, T J = 25 C I GSS GatetoSource Forward Leakage 00 V GS = 20V n GatetoSource Reverse Leakage 00 V GS = 20V Q g Tota Gate Charge 6 92 I = 5.6 Q gs GatetoSource Charge 8.0 2 nc V S = 24V Q gd Gatetorain ("Mier") Charge 22 32 V GS = 0V, See Fig. 6 and 9 t d(on) TurnOn eay Time 8 V = 5V t r Rise Time 49 I = 5.6 ns t d(off) TurnOff eay Time 59 R G = 6.2Ω t f Fa Time 60 R = 2.7Ω, See Fig. 0 C iss Input Capacitance 700 V GS = 0V C oss Output Capacitance 890 pf V S = 25V C rss Reverse Transfer Capacitance 40 ƒ =.0MHz, See Fig. 5 Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 3. (Body iode) showing the I SM Pused Source Current integra reverse 45 (Body iode) pn junction diode. V S iode Forward Votage.0 V T J = 25 C, I S = 5.6, V GS = 0V ƒ t rr Reverse Recovery Time 56 85 ns T J = 25 C, I F = 5.6 Q rr Reverse RecoveryCharge 99 50 nc di/dt = 00/µs ƒ G S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 25mH R G = 25Ω, I S = 5.6. (See Figure 2) ƒ I S 5.6, di/dt 00/µs, V V (BR)SS, T J 50 C Puse width 300µs; duty cyce 2%. Surface mounted on FR4 board, t 0sec. 2 www.irf.com
I, raintosource Current () 00 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V I, raintosource Current () 00 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V 20µs PULSE WITH T J = 25 C 0. 0 V S, raintosource Votage (V) 20µs PULSE WITH T J = 50 C 0. 0 V S, raintosource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, raintosource Current () 00 0 T J = 25 C T J = 50 C V S = 0V 20µs PULSE WITH 3.0 3.5 4.0 4.5 5.0 5.5 V, GatetoSource Votage (V) GS R S(on), raintosource On Resistance (Normaized) 2.0.5.0 0.5 I = 5.6 V GS = 0V 0.0 60 40 20 0 20 40 60 80 00 20 40 60 T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature www.irf.com 3
C, Capacitance (pf) 4000 3000 2000 000 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd C oss = C ds Cgd C iss C oss C rss 0 0 00 V S, raintosource Votage (V) Fig 5. Typica Capacitance Vs. raintosource Votage V GS, GatetoSource Votage (V) 20 6 2 8 4 I = 5.6 V S = 24V V S = 5V FOR TEST CIRCUIT 0 SEE FIGURE 9 0 20 40 60 80 00 Q G, Tota Gate Charge (nc) Fig 6. Typica Gate Charge Vs. GatetoSource Votage I S, Reverse rain Current () 00 T J = 50 C 0 T J = 25 C V GS = 0V 0.4 0.6 0.8.0.2 V S, Sourcetorain Votage (V) I I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY R S(on) 00us ms T = 25 C 0ms TJ = 50 C Singe Puse 0. 0 00 V S, raintosource Votage (V) Fig 7. Typica Sourcerain iode Fig 8. Maximum Safe Operating rea Forward Votage 4 www.irf.com
V S R Q G 0V Q GS Q G R G V GS.U.T. V V G Charge Fig 9a. Basic Gate Charge Waveform 0V Puse Width µs uty Factor 0. % Fig 0a. Switching Time Test Circuit Current Reguator Same Type as.u.t. 2V.2µF 50KΩ.3µF V GS t d(on) t r t d(off) t f 0%.U.T. V S V GS 3m I G I Current Samping Resistors 90% V S Fig 9b. Gate Charge Test Circuit Fig 0b. Switching Time Waveforms 00 Therma Response (Z thj ) 0 = 0.50 0.20 0.0 0.05 0.02 0.0 SINGLE PULSE t2 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj T 0. 0.000 0.00 0.0 0. 0 00 t, Rectanguar Puse uration (sec) PM t Fig. Maximum Effective Transient Therma Impedance, Junctiontombient www.irf.com 5
Fig 2a. Uncamped Inductive Test Circuit I S V S L R G.U.T V IS 20V RIVER tp 0.0Ω 5V E S, Singe Puse vaanche Energy (mj) 000 800 600 400 200 I TOP 2.5 4.5 BOTTOM 5.6 0 25 50 75 00 25 50 Starting T, Junction Temperature ( o J C) Fig 2c. Maximum vaanche Energy Vs. rain Current tp V (BR)SS Fig 2b. Uncamped Inductive Waveforms 6 www.irf.com
Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer ** V GS * R G dv/dt controed by R G I S controed by uty Factor "".U.T. evice Under Test * V * Reverse Poarity for PChanne ** Use PChanne river for PChanne Measurements river Gate rive Period P.W. = P.W. Period [ V GS =0V] ***.U.T. I S Waveform Reverse Recovery Current Reppied Votage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Rippe 5% Forward rop V [ ] [ I S ] *** V GS = 5.0V for Logic Leve and 3V rive evices Fig 3. For PChanne HEXFETS www.irf.com 7
SO8 Package Outine imensions are shown in miimeters (inches) E 6 6X 8 7 2 e 5 6 5 3 4 B H 0.25 [.00] IM INCHES MILLIMETERS MIN MX MIN MX.0532.0040.0688.0098.35 0.0.75 0.25 b.03.020 0.33 0.5 c.0075.0098 0.9 0.25 E e e H K L y.89.968.497.574.050 BSIC.27 BSIC.025 BSIC 0.635 BSIC.2284.2440.0099.096.06.050 0 8 4.80 5.00 3.80 4.00 5.80 6.20 0.25 0.50 0.40.27 0 8 e C y K x 45 8X b 0.25 [.00] C B 0.0 [.004] NOT ES :. IMENSIONING & TOLERNCING PER SME Y4.5M994. 2. CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS 02. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.00]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBST RT E. 8X L 7 6.46 [.255] 3X.27 [.050] 8X c FOOTPRINT 8X 0.72 [.028] 8X.78 [.070] SO8 Part Marking EXMPLE: THIS IS N IRF70 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F70 T E COE (YWW) P = E S IGNT E S L E F RE E PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WEEK = SSEMBLY SITE COE LOT COE PRT NUMBER Notes:. For an utomotive Quaified version of this part pease see http://www.irf.com/productinfo/auto/ 2. For the most current drawing pease refer to IR website at http://www.irf.com/package/ 8 www.irf.com
SO8 Tape and Ree imensions are shown in miimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI48 & EI54. 330.00 (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI48 & EI54. 4.40 (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and quaified for the Industria market. Quaification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (30) 252705 TC Fax: (30) 2527903 Visit us at www.irf.com for saes contact information.08/200 www.irf.com 9