dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. G P - 95418 IRFINPbF S HEXFET Power MOSFET V SS = 55V R S(on) = 0.012Ω I = 49 The TO-220 Fupak eiminates the need for additiona insuating hardware in commercia-industria appications. The mouding compound used provides a high isoation capabiity and a ow therma resistance between the tab TO-220 FULLPK and externa heatsink. This isoation is equivaent to using a 0 micron mica barrier with standard TO-220 product. The Fupak is mounted to a heatsink using a singe cip or by a singe screw fixing. bsoute Maximum Ratings Parameter Max. Units I @ T C = 25 C Continuous rain Current, V GS @ V 49 I @ T C = 0 C Continuous rain Current, V GS @ V 35 I M Pused rain Current 290 P @T C = 25 C Power issipation 58 W Linear erating Factor 0.38 W/ C V GS Gate-to-Source Votage ± 20 V E S Singe Puse vaanche Energy 360 mj I R vaanche Current 43 E R Repetitive vaanche Energy 5.8 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and-55 to 175 T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew bf in (1.1N m) Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 2.6 R θj Junction-to-mbient 65 C/W 06/16/04
IRFINPbF Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 55 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp. Coefficient 0.06 V/ C Reference to 25 C, I = 1m R S(on) Static rain-to-source On-Resistance 0.012 Ω V GS = V, I = 26 V GS(th) Gate Threshod Votage 2.0 4.0 V V S = V GS, I = 250µ g fs Forward Transconductance 30 S V S = 25V, I = 43 I SS rain-to-source Leakage Current 25 V µ S = 55V, V GS = 0V 250 V S = 44V, V GS = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage 0 V GS = 20V n Gate-to-Source Reverse Leakage -0 V GS = -20V Q g Tota Gate Charge 130 I = 43 Q gs Gate-to-Source Charge 23 nc V S = 44V Q gd Gate-to-rain ("Mier") Charge 53 V GS = V, See Fig. 6 and 13 t d(on) Turn-On eay Time 11 V = 28V t r Rise Time 66 I = 43 ns t d(off) Turn-Off eay Time 40 R G = 3.6Ω t f Fa Time 46 R = 0.62Ω, See Fig. Between ead, L Interna rain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 2900 V GS = 0V C oss Output Capacitance 880 pf V S = 25V C rss Reverse Transfer Capacitance 330 ƒ = 1.0MHz, See Fig. 5 C rain to Sink Capacitance 12 ƒ = 1.0MHz S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 49 (Body iode) showing the G I SM Pused Source Current integra reverse 290 (Body iode) p-n junction diode. V S iode Forward Votage 1.3 V T J = 25 C, I S = 26, V GS = 0V t rr Reverse Recovery Time 81 120 ns T J = 25 C, I F = 43 Q rr Reverse RecoveryCharge 240 370 nc di/dt = 0/µs S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. 11 ) V = 25V, starting T J = 25 C, L = 390µH R G = 25Ω, I S = 43. (See Figure 12) ƒ I S 43, di/dt 260/µs, V V (BR)SS, T J 175 C Puse width 300µs; duty cyce 2%. t=60s, ƒ=60hz Uses IRFN data and test conditions
IRFINPbF I, rain-to-source Current () 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I, rain-to-source Current () 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 4.5V 20µs PULSE WITH T C = 25 C 0.1 1 0 V S, rain-to-source Votage (V) Fig 1. Typica Output Characteristics 20µs PULSE WITH T C = 175 C 0.1 1 0 V S, rain-to-source Votage (V) Fig 2. Typica Output Characteristics I, rain-to-source Current () 0 T = 25 C J T = 175 C J V S= 25V 20µs PULSE WITH 1 4 5 6 7 8 9 V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) 3.0 2.5 2.0 1.5 1.0 0.5 I = 72 V GS = V 0.0-60 -40-20 0 20 40 60 80 0 120 140 160 180 T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature
IRFINPbF C, Capacitance (pf) 5000 4000 3000 2000 V GS = 0V, f = 1MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd C iss C oss = C ds Cgd C oss Crss V, Gate-to-Source Votage (V) GS 20 16 12 8 4 I = 43 V S = 44V V S = 28V 0 1 0 V S, rain-to-source Votage (V) 0 FOR TEST CIRCUIT SEE FIGURE 13 0 20 40 60 80 0 120 140 Q, Tota Gate Charge (nc) G Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () 0 T = 175 C J T = 25 C J V GS = 0V 0.4 0.8 1.2 1.6 2.0 2.4 2.8 V S, Source-to-rain Votage (V) I, rain Current () OPERTION IN THIS RE LIMITE BY RS(on) µs 0 0µs 1ms ms T C = 25 C T J = 175 C Singe Puse 1 1 0 V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating rea
IRFINPbF 50 V S R 40 R G V GS.U.T. - V I, rain Current () 30 20 Fig a. Switching Time Test Circuit V S 90% V Puse Width 1 µs uty Factor 0.1 % 0 25 50 75 0 125 150 175 T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig 9. Maximum rain Current Vs. Case Temperature Fig b. Switching Time Waveforms Therma Response (Z thjc ) 1 0.1 = 0.50 0.20 0. 0.05 0.02 0.01 t2 SINGLE PULSE (THERML RESPONSE) Notes: 1. uty factor = t 1 / t 2 2. Peak T J= P M x Z thjc TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectanguar Puse uration (sec) PM t1 Fig 11. Maximum Effective Transient Therma Impedance, Junction-to-Case
IRFINPbF 15V V S L RIVER R G.U.T I S - V 20V tp 0.01Ω Fig 12a. Uncamped Inductive Test Circuit V (BR)SS tp E S, Singe Puse vaanche Energy (mj) 800 600 400 200 TOP BOTTOM I 18 31 43 V = 25V 0 25 50 75 0 125 150 175 Starting T J, Junction Temperature ( C) Fig 12c. Maximum vaanche Energy Vs. rain Current I S Fig 12b. Uncamped Inductive Waveforms Current Reguator Same Type as.u.t. 50KΩ Q G 12V.2µF.3µF V Q GS Q G.U.T. V - S V GS V G 3m Charge Fig 13a. Basic Gate Charge Waveform I G I Current Samping Resistors Fig 13b. Gate Charge Test Circuit
IRFINPbF Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G river same type as.u.t. I S controed by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-ppied Votage Inductor Curent Body iode Forward rop Rippe 5% I S * V GS = 5V for Logic Leve evices Fig 14. For N-Channe HEXFETS
IRFINPbF TO-220 Fu-Pak Package Outine imensions are shown in miimeters (inches) TO-220 Fu-Pak Part Marking Information E XMPLE : T HIS IS N IRF I840G WITH SSEMBLY LOT COE 3432 S S EMB LE ON WW 24 1999 IN THE SSEMBLY LINE "K" Note: "P" in assemby ine position indicates "Lead-Free" INT E R NT IONL R E CT IF IE R LOGO S S E MB L Y LOT COE IRFI840G 924K 34 32 PRT NUMBER T E COE YER 9 = 1999 WE E K 24 LINE K ata and specifications subject to change without notice. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (3) 252-75 TC Fax: (3) 252-7903 Visit us at www.irf.com for saes contact information. 06/04
Note: For the most current drawings pease refer to the IR website at: http://www.irf.com/package/