SEMICONDUCTOR TECHNICAL DATA Order this document by MJL32A/D The MJL32A and MJL32A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed for W Audio Frequency Gain Complementary: Gain Linearity from ma to 7 A High Gain 6 to 75 hfe = 5 (Min) @ IC = A Low Harmonic Distortion High Safe Operation Area A/ V @ sec High ft 3 MHz Typical *Motorola Preferred Device 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 2 VOLTS 2 WATTS MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit Collector Emitter Voltage VCEO 2 Vdc Collector Base Voltage VCBO 2 Vdc Emitter Base Voltage VEBO 7 Vdc Collector Emitter Voltage.5 V VCEX 2 Vdc Collector Current Continuous Collector Current Peak () CASE 3G 2, STYLE 2 TO 26 IC 5 25 Base Current Continuous IB.5 Adc Adc Total Power Dissipation @ TC = 25 C Derate Above 25 C PD 2.3 Watts W/ C Operating and Storage Junction Temperature Range TJ, Tstg 65 to +5 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC.7 C/W () Pulse Test: Pulse Width = 5 ms, Duty Cycle <%. Designer s Data for Worst Case Conditions The Designer s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design. Designer s is a trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc. 995 Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (IC = madc, IB = ) Emitter Base Voltage (IE = µadc, IC = ) Collector Cutoff Current (VCB = 2 Vdc, IE = ) Emitter Cutoff Current (VEB = 5 Vdc, IC = ) Emitter Cutoff Current (VEB = 7 Vdc, IC = ) VCEO(sus) 2 Vdc VEBO 7 Vdc ICBO 5 µadc IEBO 5 µadc IEBO 25 µadc SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 5 Vdc, t = s (non repetitive) (VCE = Vdc, t = s (non repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = madc, dc) (IC = Adc, dc) (IC = 3 Adc, dc) (IC = 5 Adc, dc) (IC = 7 Adc, dc) (IC = Adc, dc) (IC = 5 Adc, dc) Collector Emitter Saturation Voltage (IC = Adc, IB = Adc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = Adc, dc, ftest = MHz) Output Capacitance (VCB = Vdc, IE =, ftest = MHz) hfe 6 6 6 6 6 5 2 25 5 35 75 75 75 75 75 VCE(sat) 3 Vdc ft 3 MHz Cob 6 pf () Pulse Test: Pulse Width = 3 µs, Duty Cycle 2%. 2 Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) ftest = MHz 2 PNP MJL32A 3 5 6 VCE = V 7 f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) ftest = MHz 2 NPN MJL32A 3 5 VCE = V 6 7 Figure. Current Gain Bandwidth Product Figure 2. Current Gain Bandwidth Product PNP MJL32A NPN MJL32A h FE, DC CURRENT GAIN VCE = 2 V hfe, DC CURRENT GAIN VCE = 2 V. Figure 3. DC Current Gain. Figure. DC Current Gain PNP MJL32A NPN MJL32A h FE, DC CURRENT GAIN C 25 C 25 C hfe, DC CURRENT GAIN C 25 C 25 C.. Figure 5. DC Current Gain, Figure 6. DC Current Gain, Motorola Bipolar Power Transistor Device Data 3
TYPICAL CHARACTERISTICS VBE(on), BASE EMITTER VOLTAGE (VOLTS) PNP MJL32A..6..2 VBE(on), BASE EMITTER VOLTAGE (VOLTS) NPN MJL32A 3.2 2. 2. 2.6.2.. 2 3 5 6 7 9 2 2 6 2 6 2 Figure 7. Typical Base Emitter Voltage Figure. Typical Base Emitter Voltage 2 IB = A 6 2. A PNP MJL32A NPN MJL32A 2.6 A IB = A.6 A. A. A. A 6.2 A 2 2 3 5 6 7 9 2 3 5 6 7 9 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS).2 A Figure 9. Typical Output Characteristics Figure. Typical Output Characteristics 25 ms s. VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure. Forward Bias Safe Operating Area (FBSOA) There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure is based on TJ(pk) = 2 C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS.25 (.) M T B M R N Y F 2 PL B Q U A 2 3 L P K W G D 3 PL.25 (.) M Y Q S J H C T E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 92. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 2. 2.9.2.2 B 9.3 2.3.76. C.7 5.3.5.29 D.93..37.5 E.9 2..75.3 F 2.2 2..7.2 G 5.5 BSC.25 BSC H 2.6 3..2. J.3.7.7.3 K 7.6..693.7 L...33.9 N 3.95.75.56.7 P 2.2 2.6.7.2 Q 3. 3.5.22.37 R 2.5 2.35.5.93 U 6. 6.5.2.256 W 2. 3.2..25 STYLE 2: PIN. BASE 2. COLLECTOR 3. EMITTER CASE 3G 2 TO 26 ISSUE E Motorola Bipolar Power Transistor Device Data 5
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