QID1215 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (72) 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q P Q U B H G C M C1 (1-12) G1 (15-16) E1 (13-1) E1 (7-9) Outline Drawing and Circuit Diagram 1 2 3 5 6 7 9 1 11 12 E2 C2 E1 C1 G2 S2 2 19 1 17 Dimensions Inches Millimeters A.32 19. B 2.21 56.1 C.71 1. D 3.7±.2 9.±.5 E 2.26 51.6 F 3.17.5 G 1.96 9. H 1. 25.5 K.7 22. L.266 6.75 M.26 6.5 N.59 15. P.56 1.9 L R S DETAIL "B" G1 S1 16 15 1 13 C2 ( - 6) G2 (19-2) E2 (17-1) E2 (1-3) Dimensions Inches Millimeters Q.9 11. R.5 22.9 S 1.7 26.6 T.15 3. U.16. V.3 7.5 W.5 1.15 X.3. Y.16. Z.7 12.1 AA.17 Dia..3 Dia. AB.1 Dia. 2.5 Dia. AC. Dia. 2.1 Dia. T DETAIL "A" N K X E V T W DETAIL "A" Description: Powerex IGBT Modules are designed for use in high frequency applications; upwards of 3 khz for hard switching applications and khz for soft switching applications. Each module consists of two IGBT Transistors with each transistor having a reverseconnected super-fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low ESW(off) Aluminum Nitride Isolation Discrete Super-Fast Recovery Free-Wheel Silicon Carbide Schottky Diode Low Internal Inductance 2 Individual Switches per Module Isolated Baseplate for Easy Heat Sinking Copper Baseplate RoHS Compliant Applications: Energy Saving Power Systems such as: Fans; Pumps; Consumer Appliances High Frequency Type Power Systems such as: UPS; High Speed Motor Drives; Induction Heating; Welder; Robotics High Temperature Power Systems such as: Power Electronics in Electric Vehicle and Aviation Systems 1
QID1215 1 Amperes/12 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Symbol QID1215 Units Junction Temperature Tj to 15 C Storage Temperature Tstg to 15 C Collector-Emitter Voltage (G-E Short) VCES 12 Volts Gate-Emitter Voltage (C-E Short) VGES ±2 Volts Collector Current (TC = 25 C) IC 1* Amperes Peak Collector Current ICM 2* Amperes Emitter Current** (TC = 25 C) IE * Amperes Repetitive Peak Emitter Current (TC = 25 C, tp = 1ms, Half Sine Pulse)** IEM 55* Amperes Maximum Collector Dissipation (TC = 25 C, Tj 15 C) PC 73 Watts Mounting Torque, M6 Mounting in-lb Weight 27 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 25 Volts IGBT Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = V 1. ma Gate Leakage Current IGES VGE = VGES, VCE = V.5 µa Gate-Emitter Threshold Voltage VGE(th) IC = 1mA, VCE = 1V.5 6. 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, VGE = 15V, Tj = 25 C 5. 6.5 Volts IC = 1A, VGE = 15V, Tj = 125 C 5. Volts Total Gate Charge QG VCC = 6V, IC = 1A, VGE = 15V 5 nc Input Capacitance Cies 16 nf Output Capacitance Coes VCE = 1V, VGE = V 1.3 nf Reverse Transfer Capacitance Cres.3 nf Inductive Turn-on Delay Time td(on) VCC = 6V, IC = 1A, ns Load Rise Time tr VGE1 = VGE2 = 15V, ns Switch Turn-off Delay Time td(off) RG = 3.1Ω, ns TimeFall Time tf Switching Operation ns * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector silicon carbide Schottky diode (FWDi). 2
QID1215 1 Amperes/12 Volts Reverse Schottky Diode Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Diode Forward Voltage VFM IF = A, VGS = -5V 1.6 2. Volts IF = A, VGS = -5V, Tj = 175 C 2.5 3.2 Volts Diode Reverse Current IR VR = 12V 1 μa VR = 12, Tj = 15 C 26 16 μa Diode Capacitive Charge QC VR = 12V, IF = A, di/dt = A/μs 52 nc Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module,.17 C/W TC Reference Point Under Chips Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference.3 C/W TC Reference Point Under Chips Contact Thermal Resistance Rth(c-f) Per 1/2 Module, Thermal Grease Applied. C/W External Gate Resistance RG 3.1 31 Ω Internal Inductance Lint IGBT Part 1 nh 3
QID1215 1 Amperes/12 Volts OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS COLLECTOR CURRENT, I C, (AMPERES) 2 15 1 5 V GE = 2V 2 6 1 15 1 13 12 11 1 9 COLLECTOR CURRENT, I C, (AMPERES) 2 15 1 5 V GE = 1V 5 1 15 2 VOLTAGE, V CE, (VOLTS) GATE-EMITTER VOLTAGE, V GE, (VOLTS) SATURATION VOLTAGE CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS SATURATION VOLTAGE, V CE(sat), (VOLTS) 9 7 6 5 3 2 1 V GE = 15V SATURATION VOLTAGE, V CE(sat), (VOLTS) 1 6 2 I C = 2A I C = 1A I C = A 5 1 15 COLLECTOR-CURRENT, I C, (AMPERES) 2 6 1 12 1 16 1 2 GATE-EMITTER VOLTAGE, V GE, (VOLTS)
QID1215 1 Amperes/12 Volts FREE-WHEEL SCHOTTKY DIODE FORWARD CHARACTERISTICS FREE-WHEEL SCHOTTKY DIODE REVERSE CHARACTERISTICS 16 16 FORWARD CURRENT, I F, (μa) 12 96 6 32 T j = 75 C T j = 175 C 1 2 3 5 FORWARD VOLTAGE, V F, (VOLTS) REVERSE CURRENT, I R, (μa) 12 96 6 32 T j = 175 C T j = 75 C 5 1 15 2 REVERSE VOLTAGE, V R, (VOLTS) CAPACITANCE VS. V CE HALF-BRIDGE SWITCHING CHARACTERISTICS 1 2 V GE = V 1 3 CAPACITANCE, C ies, C oes, C res, (nf) 1 1 1 C ies C oes C res 1-1 1-1 1 1 1 1 2 VOLTAGE, V CE, (VOLTS) SWITCHING TIME, (ns) 1 2 1 1 1 1 1 1 2 V CC = 6V V GE = 15V R G = 3.1Ω COLLECTOR CURRENT, I C, (AMPERES) 1 3 5
QID1215 1 Amperes/12 Volts GATE CHARGE VS. V GE SWITCHING LOSS VS. COLLECTOR CURRENT GATE-EMITTER VOLTAGE, V GE, (VOLTS) 2 16 12 I C = 1A V CC = V 1 2 3 5 6 7 GATE CHARGE, Q G, (nc) V CC = 6V SWITCHING LOSS, E SW(on), E SW(off), (mj/pulse) 1 1 1 1-1 1 1 1 2 V CC = 6V V GE = 15V R G = 3.1Ω E SW(on) E SW(off) COLLECTOR CURRENT, I C, (AMPERES) 1 3 SWITCHING LOSS VS. GATE RESISTANCE REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT SWITCHING LOSS, E SW(on), E SW(off), (mj/pulse) 1 2 1 1 V CC = 6V V GE = ±15V I C = 1A E SW(on) E SW(off) 1 1 1 1 GATE RESISTANCE, R G, (Ω) 1 2 REVERSE RECOVERY SWITCHING LOSS, E rr, (mj/pulse) 1 2 1 1 1 1 1 1 2 V CC = 6V V GE = ±15V R G = 3.1Ω EMITTER CURRENT, I E, (AMPERES) 1 3 6
QID1215 1 Amperes/12 Volts REVERSE RECOVERY SWITCHING LOSS, E rr, (mj/pulse) 1 2 1 1 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE V CC = 6V V GE = ±15V I E = 1A 1 1 1 1 GATE RESISTANCE, R G, (Ω) 1 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 1 1-3 1-2 1-1 1 1 1 1-1 1-2 1-3 Single Pulse T C = 25 C Per Unit Base = R th(j-c) =.17 C/W (IGBT) R th(j-c) =.3 C/W (FWDi) 1-5 1-1 -3 TIME, (s) 1-1 1-2 1-3 7