Ultrafast high voltage rectifier Mian product characteristics I F(AV) up to 2 x 1 A V RRM 3 V A1 K1 T j (max) 15 C A2 K2 V F (typ).95 V K1 t rr (max) 9 ns A1 Features and benefits K2 Combines highest recovery and reverse voltage performance Ultrafast, soft and noise-free recovery Package insulation voltage 25 V rms low inductance and low capacitance allow simpler layout A2 ISOTOP Description Dual rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in ISOTOP, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies. Order codes Part number Marking Table 1. Absolute ratings (limiting values, per diode, T c = 25 C unless otherwise stated) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 3 V I F(RMS) RMS forward current 18 A I F(AV) Average forward current T c = 85 C δ =.5 Per diode 1 Per device 2 A I FSM Surge non repetitive forward current t p = 1 ms sinusoidal 1 A T stg Storage temperature range -55 to + 15 C T j Maximum operating junction temperature 15 C TM: ISOTOP is a registered trademark of STMicroelectronics September 26 Rev 2 1/7 www.st.com 7
Characteristics 1 Characteristics Table 2. Thermal resistance Symbol Parameter Value (max). Unit R th(j-c) Junction to case Per diode.55 Total.35 R th(c) Coupling.1 C/W When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x R th(j-c) (Per diode) + P(diode 2) x R th(c) Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit I R (1) V F (2) Reverse leakage current Forward voltage drop T j = 25 C 2 µa V R = 3 V T j = 125 C.2 2 ma T j = 25 C 1.2 I F = 1 A V T j = 15 C.8.95 1. Pulse test: t p = 5 ms, δ < 2% 2. Pulse test: t p = 38 µs, δ < 2% To evaluate the conduction losses use the following equation: P =.75 x I F(AV) +.2 I F 2 (RMS) Table 4. Dynamic characteristics (per diode) Symbol Parameter Test conditions Min Typ Max Unit t rr I RM Reverse recovery time Reverse recovery current T j = 25 C I F =.5 A I rr =.25 A I R = 1 A 55 I F = 1 A di F /dt = -5 A/µs V R = 3 V T j = 125 C I F = 1 A V R = 2 V di F /dt = -2 A/µs S factor Softness factor T j = 125 C I F = 1 A V R = 2 V di F /dt = -2 A/µs t fr V FP Forward recovery time Forward recovery voltage.3 9 ns 18 A T j = 25 C I F = 1 A di F /dt = 2 A/µs 14 ns V FR = 1.1 x V Fmax T j = 25 C I F = 1 A di F /dt = 2 A/µs V FR = 1.1 x V Fmax 5 V 2/7
Characteristics Figure 1. Conduction losses versus average forward current (per diode) Figure 2. Forward voltage drop versus forward current (per diode) P1(W) 12 1 8 δ =.5 δ =.1 δ =.2 δ =.5 δ = 1 5 I FM (A) 1 Tj=125 C (Typical values) Tj=25 C 6 4 2 I F(av) (A) δ=t p/t t p 2 4 6 8 1 12 T Tj=125 C 1 V FM(V) 1..2.4.6.8 1. 1.2 1.4 1.6 1.8 2. Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Peak reverse recovery current versus di F /dt (9% confidence, per diode) 1. Z th(j-c) /R th(j-c).8.6.4.2 Single pulse t p(s) δ=t p/t t p. 1E-3 1E-2 1E-1 1E+ 5E+ T I RM(A) 4 35 3 25 2 15 1 V R=2V I F=.5xI F(av) IF=I F(av) I F=2xI F(av) 5 di F/dt(A/µs) Figure 5. Reverse recovery time versus di F /dt (9% confidence, per diode) Figure 6. Softness factor (t b /t a ) versus di F /dt (typical values, per diode) 26 t rr (ns) 24 22 2 18 16 14 12 1 8 6 4 2 I F=2xI F(av) I=I(av) F F di /dt(a/µs) F I F=.5xI F(av) V R=2V.6 S factor V R=2V.5.4.3.2.1 di F/dt(A/µs). 3/7
Characteristics Figure 7. Relative variations of dynamic parameters versus junction temperature (reference: T j = 125 C) Figure 8. Transient peak forward voltage versus di F /dt (9% confidence, per diode) 2.4 2.2 2. 1.8 1.6 1.4 1.2 1..8.6.4.2. S factor IRM T ( C) j 25 5 75 1 125 8 V FP (V) 7 6 5 4 3 2 I=I(av) F F 1 di F/dt(A/µs) Figure 9. Forward recovery time versus di F /dt (9% confidence, per diode) 1 t fr (ns) 9 8 7 6 5 4 3 2 1 di /dt(a/µs) F V FR=1.1 x VF max. I=I(av) F F 4/7
Package information 2 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value: 1.3 Nm Maximum torque value: 1.5 Nm Table 5. ISOTOP Dimensions Ref. Millimeters Dimensions Inches E G2 C Min. Max. Min. Max. A 11.8 12.2.465.48 A1 8.9 9.1.35.358 A A1 F1 E2 F C2 B 7.8 8.2.37.323 C.75.85.3.33 C2 1.95 2.5.77.81 D 37.8 38.2 1.488 1.54 D1 31.5 31.7 1.24 1.248 P1 E 25.15 25.5.99 1.4 E1 23.85 24.15.939.951 D S G D1 E2 24.8 typ..976 typ. B G 14.9 15.1.587.594 G1 12.6 12.8.496.54 G2 3.5 4.3.138.169 G1 E1 ØP F 4.1 4.3.161.169 F1 4.6 5..181.197 P 4. 4.3.157.69 P1 4. 4.4.157.173 S 3.1 3.3 1.185 1.193 In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7
Ordering information 3 Ordering information Ordering type Marking Package Weight Base qty Delivery mode ISOTOP 27 g (without screws) 1 (with screws) Tube 4 Revision history Date Revision Description of Changes 1999 2C First issue 5-Sep-26 2 Reformatted to current standards. Thermal resistance updated in Table 2. 6/7
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