Features. = +25 C, Vdd = +5V, Idd = 400mA [1]

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v.61 Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Features Saturated Output Power:.5 dbm @ 21% PAE High Output IP3: 34.5 dbm High Gain:.5 db DC Supply: +5V @ 4 ma No External Matching Required 24 Lead 4x4 mm SMT Package: 16 mm² Functional Diagram General Description Electrical Specifications, T A = + C, Vdd = +5V, Idd = 4mA [1] The is a three stage GaAs phemt MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz. The provides.5 db of gain, and.5 dbm of saturated output power and 21% PAE from a +5V supply. The RF I/Os are DC blocked and matched to 5 Ohms. The 4x4 mm plastic package eliminates the need for wirebondig, and is compatible with surface mount manufacturing techniques. Parameter Min. Typ. Max. Units Frequency Range 16-24 GHz Gain 18.5.5 db Gain Variation Over Temperature.28 db/ C Input Return Loss 11 db Output Return Loss 12 db Output Power for 1 db Compression (P1dB) 24.5 26.5 dbm Saturated Output Power (Psat).5 dbm Output Third Order Intercept (IP3) [2] 34.5 dbm Total Supply Current (Idd) 4 ma [1] Adjust Vgg between -2 to V to achieve Idd = 4 ma typical. [2] Measurement taken at Pout / Tone = +16 dbm - 1 One Technology Way, P.O. Box 16, Norwood, MA 62-16 Phone: 78--3343 Fax: 78--3373 Order Phone: On-line 781-32-47 at www.hittite.com Application Support: Phone: 78--3343 Application or apps@hittite.com Support: Phone: 1-8-ANALOG-D

v.61 Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature 28 RESPONSE (db) 1-1 - S21 S11 S22 GAIN (db) 24 16 +C -4C - 12 14 26 28 Input Return Loss vs. Temperature RETURN LOSS (db) -4-8 -12-16 - P1dB vs. Temperature P1dB (dbm) 2 +C -4C 12 Output Return Loss vs. Temperature RETURN LOSS (db) -4-8 -12-16 - -24 P1dB vs. Supply Voltage P1dB (dbm) 33 2 +C -4C 5V 6V 7V +C -4C 21 One Technology Way, P.O. Box 16, Norwood, MA 62-16 Phone: 78--3343 Fax: 78--3373 Order Phone: On-line 781-32-47 at www.hittite.com Application Support: Phone: 78--3343 Application or apps@hittite.com Support: Phone: 1-8-ANALOG-D - 2

v.61 Psat vs. Temperature 33 Psat vs. Supply Voltage 33 +C -4C Psat (dbm) 2 Psat (dbm) 2 5V 6V 7V P1dB vs. Supply Current (Idd) P1dB (dbm) 2 ma 375mA 4mA 21 Output IP3 vs. Temperature, Pout/Tone = +16 dbm 45 4 +C -4C Psat vs. Supply Current (Idd) Psat (dbm) 2 ma 375mA 4mA 21 Output IP3 vs. Supply Current, Pout/Tone = +16 dbm 45 4 ma 375mA 4mA IP3 (dbm) IP3 (dbm) - 3 One Technology Way, P.O. Box 16, Norwood, MA 62-16 Phone: 78--3343 Fax: 78--3373 Order Phone: On-line 781-32-47 at www.hittite.com Application Support: Phone: 78--3343 Application or apps@hittite.com Support: Phone: 1-8-ANALOG-D

v.61 Output IP3 vs. Supply Voltage, Pout/Tone = +16 dbm 45 Output IM3 @ Vdd = +5V 7 4 5.V 6.V 7.V 6 5 16 GHz 18 GHz GHz 22 GHz 24 GHz IP3 (dbm) IM3 (dbc) 4 1 IM3 (dbc) Pout (dbm), GAIN (db), PAE (%) 7 6 5 4 1 16 GHz 18 GHz GHz 22 GHz 24 GHz 5 7 11 13 15 17 1 21 15 1 5 Pout/TONE (dbm) Power Compression @ GHz Pout Gain PAE IM3 (dbc) ISOLATION (db) 5 7 11 13 15 17 1 21 7 6 5 4 1 16 GHz 18 GHz GHz 22 GHz 24 GHz 5 7 11 13 15 17 1 21-1 - - -4-5 -6-7 Pout/TONE (dbm) Output IM3 @ Vdd = +6V Output IM3 @ Vdd = +7V Pout/TONE (dbm) Reverse Isolation vs. Temperature +C -4C -18-13 -8-3 2 7 12 INPUT POWER (dbm) -8 One Technology Way, P.O. Box 16, Norwood, MA 62-16 Phone: 78--3343 Fax: 78--3373 Order Phone: On-line 781-32-47 at www.hittite.com Application Support: Phone: 78--3343 Application or apps@hittite.com Support: Phone: 1-8-ANALOG-D - 4

v.61 Gain & Power vs. Supply Current @ GHz Gain & Power vs. Supply Voltage @ GHz Gain (db), P1dB (dbm), Psat (dbm) 15 Gain P1dB Psat Gain (db), P1dB (dbm), Psat (dbm) 15 Gain P1dB Psat 1 36 37 38 3 4 Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN) 7V dbm Channel Temperature 15 C Continuous Pdiss (T= 85 C) (derate 4 mw/ C above 85 C) Idd (ma) Thermal Resistance (channel to exposed ground paddle) 2.7 W 24.85 C/W Storage Temperature -65 to +15 C POWER DISSIPATION (W) Operating Temperature -55 to +85 C 2.5 2.3 2.1 1. 1.7 Power Dissipation 16 GHz 18 GHz GHz 22 GHz 24 GHz 1.5-18 -14-1 -6-2 2 6 1 INPUT POWER (dbm) 1 5 5.5 6 6.5 7 Typical Supply Current vs. Vdd Vdd (V) Vdd (V) Idd (ma) +5. 4 +5.5 4 +6. 4 Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 4 ma at +5.5V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS - 5 One Technology Way, P.O. Box 16, Norwood, MA 62-16 Phone: 78--3343 Fax: 78--3373 Order Phone: On-line 781-32-47 at www.hittite.com Application Support: Phone: 78--3343 Application or apps@hittite.com Support: Phone: 1-8-ANALOG-D

v.61 Outline Drawing Package Information NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: -8 MICROINCHES GOLD OVER 5 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED.5mm DATUM -C- 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1. Part Number Package Body Material Lead Finish MSL Rating Package Marking [1] [2] H757 RoHS-compliant Low Stress Injection Molded Plastic 1% matte Sn MSL1 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 26 C One Technology Way, P.O. Box 16, Norwood, MA 62-16 Phone: 78--3343 Fax: 78--3373 Order Phone: On-line 781-32-47 at www.hittite.com Application Support: Phone: 78--3343 Application or apps@hittite.com Support: Phone: 1-8-ANALOG-D - 6

v.61 Pin Descriptions Pin Number Function Description Interface Schematic 1, 2, 4-7, 12-15, 17-1, 24 GND These pins and package bottom must be connected to RF/DC ground. 3 RFIN 8-11,, 22 N/C 16 RFOUT 21 Vdd Vgg Application Circuit This pin is AC coupled and matched to 5 Ohms. The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. This pin is AC coupled and matched to 5 Ohms. Drain bias for amplifier. External bypass caps 1pF,.1uF and 4.7uF are required Gate control for PA. Adjust Vgg to achieve recommended bias current. External bypass caps 1pF,.1uF and 4.7uF are required. - 7 One Technology Way, P.O. Box 16, Norwood, MA 62-16 Phone: 78--3343 Fax: 78--3373 Order Phone: On-line 781-32-47 at www.hittite.com Application Support: Phone: 78--3343 Application or apps@hittite.com Support: Phone: 1-8-ANALOG-D

v.61 Evaluation PCB List of Materials for Evaluation PCB 1216 [1] Item Description J1, J2 2. mm Connectors J3, J4 DC Pins C1, C16 1 pf Capacitor, 42 Pkg. C5, C17 1 kpf Capacitor, 42 Pkg. C, C18 4.7 µf Capacitor, 42 Pkg. U1 PCB [2] Power Amplifier 155 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4 or Arlon FR4 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 5 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. One Technology Way, P.O. Box 16, Norwood, MA 62-16 Phone: 78--3343 Fax: 78--3373 Order Phone: On-line 781-32-47 at www.hittite.com Application Support: Phone: 78--3343 Application or apps@hittite.com Support: Phone: 1-8-ANALOG-D - 8